强束流钼注入铝中的反常分布研究

利用从金属蒸汽真空弧 (简称 MEVVA)离子源引出的强束流脉冲钼离子对纯铝进行了不同束流密度的离子注入试验。钼离子的加速电压为 4 8k V,剂量为 3× 10 1 7cm- 2 ,平均束流密度为 2 5和 4 7μA· cm- 2 。透射电镜 (TEM)分析证明在注入层内可形成 Al1 2 Mo晶体 ;背散射 (RBS)分析证明 Al1 2 Mo的厚度可达 6 0 0至70 0 nm;结合强束流脉冲注入的特点 ,根据碰撞理论提出了解释钼反常分布的“蜂窝”模型。     

经钨离子束处理的H13钢的表面结构和成分研究

采用由金属蒸汽真空弧离子源(MEVVA)引出的强束流脉冲钨离子对H13钢进行了离子注入表面改性研究.注入剂量为3×1017cm-2,引出电压为48kV,平均束流为15μA*cm-2.利用卢瑟福背散射谱(RBS)测量了注入表面的成分,借助X射线衍射仪(XRD)和X射线光电子能谱仪(XPS)考察了注入表面的氧化情况及微观结构.研究发现,钨离子注入H13钢能减轻其表面铁元素的氧化;钨元素在其表面的原子百分比可达28%左右,并根据能带论确定了注入样品中钨和铁元素的电子结构.     

国内期刊纵览

20 0 0 10 0 1　铝及铝合金的电镀工艺综述———李军 .表面技术 (双月刊 ) ,2 0 0 0 ,2 9( 4 ) :3铝及铝合金具有密度小、较高的机械强度和较高的延展性、易加工的性能 ,因此在军工生产和民品生产中得到广泛应用。介绍了铝及铝合金 5种镀前处理方法以及 6种电镀工艺 ,为铝及铝合金电镀生产和发展起到一定的借鉴作用。2 0 0 0 10 0 2　ＺＬ10 4合金表面化学镀镍磷合金层的研究———谭澄宇 .表面技术 (双月刊 ) ,2 0 0 0 ,2 9( 4 ) :6在ＺＬ10 4合金表面上进行Ｎｉ Ｐ与Ｎｉ Ｃｕ Ｐ化学镀 ,以提高ＺＬ10 4合金材料的耐蚀性与耐磨性。结果表…     

脉冲钨离子注入导致的空洞效应

采用由金属蒸汽真空弧(metalvaporvacuumarc,简称MEVVA)离子源引出的强束流脉冲钨离子对H13钢进行了离子注入表面改性研究。在注入剂量为1×1017cm-2,温度为200℃以下,观察到强束流脉冲钨离子注入导致的空洞和空洞的硬化及脆化效应,分析了空洞对注入钨元素浓度深度分布的影响,基于热峰效应(spike),讨论了空洞的形成原因及其与材料耐磨性的关系。     

铌离子注入改善铝表面的力学性能

利用金属蒸气真空弧离子源,将大束流Nb离子注入到铝中,改善了铝表面的力学性能。在离子注入过程中直接形成了金属间化合物Al3Nb。金属间化合物的形成与离子注入的剂量有关。当Nb离子剂量达到3×10     

Al 及 Al 合金离子注入氮层组织结构及其耐磨性

选取能量为80keV、剂量范围为1×10~(16)-8.3×10~(17)N~+·cm~(-2)的氮离子对 L2,LD2,LF12,LY12,Al-4%Cu 等 Al 合金进行氮离子注入,并用 X 射线光电子能谱及透射电子显微镜分析了氮离子注入层的价态特征及组织结构特点。在此基础上进行了硬度及耐磨性试验。氮离子注入到 Al 及 Al 合金中在室温下能形成细小弥散的 AlN 析出相;氮离子注入加速了 Al-4%Cu 合金的时效析出过程。Al 及 Al 合金表层硬度及耐磨性随着氮离子注入剂量的增加而提高。     

Ta和Ag离子双注入Ti6Al4V合金抗Hank's溶液腐蚀性能研究

采用Ta和Ag离子双注入对医用Ti6Al4V合金进行表面改性,以Ta离子1.5×1017 ions/cm2先注入,Ag离子1×1017 ions/cm2后注入合金样品表面.采用动电位极化曲线研究Ta+Ag离子双注入前后Ti6Al4V合金抗Hank’s溶液腐蚀性能,利用小角掠射X射线衍射技术研究离子双注入前后Ti6Al4V合金表面物相组成,以X射线光电子能谱技术分析离子双注入样品表面、离子注入合金腐蚀样品表面元素存在的化合态.结果表明,Ta+Ag离子双注入改善了Ti6Al4V合金抗Hank’s溶液腐蚀性能,离子双注入合金的腐蚀电流密度与对照样相比降低了94.6％.离子双注入Ti6Al4V合金表面生成的耐蚀合金层、少量单质Ta和Ag、合金表面的氧化物腐蚀阻挡层有利于合金抗Hank’s溶液腐蚀性能的改善.     

高熵合金FeCrCoNiMn热浸铝熔体的界面结构及组织形成机制研究

用真空电弧炉制备了铸态高熵合金FeCrCoNiMn(HEA),将高熵合金在700℃铝熔体中进行了不同时间(0~1h)的保温热浸实验,分析了HEA-Al固/液界面反应的组织演变及形成机理。结果表明,高熵合金在铝熔体中热浸反应时,其界面附近可形成由Al_(86)Cr_(13.5)Fe_(6.5)、Al_(86)Mn_(14)、Al_3Ni和Al_9Co_2多种富铝金属间化合物组成的反应层、富铝块体相以及含Fe和Ni的富铝层状析出相和网状结构组织。热浸初期,界面反应层的形成和长大主要受高熵合金表面元素的溶解和脱嵌过程控制,此时反应层和块体相的形成和长大主要位于铝溶体一侧且反应层界面迁移速率较快;形成反应层后,反应层厚度随热浸反应时间的延长而增大,当反应时间t10min后,反应层厚度基本维持在20μm左右不再变化,此时反应层界面迁移速率有所变缓。     

一种镍基合金在900和1000℃的高温氧化行为

采用X射线衍射(XRD),扫描电镜(SEM)及能谱(EDAX)等方法,研究了Cr5.0 Co8.0 Mo0.9W5.5 Ta7.4 Al6.0 Re4.2合金在900和1 000℃的氧化行为。结果表明,氧化动力学曲线遵循氧化初期氧化增重速率较快,氧化期间氧化动力学曲线呈波浪式变化,且呈现氧化温度越高波浪式越明显的特征。在900℃氧化300 h后合金表面氧化物膜分为3层,外层为Ni O、Ni2Cr2O4、Ni2Co O4和Cr Ta O4;中间层为平直的Al2O3层,内氧化层为Al2O3,氧化期间,分布在外层的Cr Ta O4抑制基体中Al向外扩散,并抑制氧化膜的生长,使氧化速度降低。1 000℃时合金表面的氧化物膜分为2层,外层为Ni O、Ni2Cr2O4、Ni2Co O4和Cr Ta O4;内氧化层为Al2O3。在900和1 000℃氧化期间,合金均发生元素Al的内氧化和内氮化,与外氧化膜相邻的区域为元素Al的内氧化区,远离外氧化膜的基体内部形成元素Al的内氮化区,随氧化温度升高,内氧化区和内氮化区的深度增加,内氧化物和内氮化物的尺寸增大。     

Hank′s溶液中注碳Ti6Al4V合金缝隙试样的电化学行为

为探索碳离子注入Ti-6Al-4V合金在人工模拟体液Hank's溶液中的性能,采用电化学方法、扫描电子显微镜和X射线衍射对其缝隙试样在人工模拟体液Hank's溶液中的电化学行为进行了研究.结果表明:碳离子注入后,Ti-6Al-4V合金缝隙试样的腐蚀电位升高、电荷转移电阻增大,阳极极极化电流密度降低,改善了电化学性能;碳离子注入后,Ti-6Al-4V合金表面形成主要由TiC组成的无序层膜,该膜层阻滞了合金元素的溶解,提高了合金的耐缝隙腐蚀性能.     

渐进因子分析法在Ta2O5／Ta样品俄歇深度剖析研究中的应用

首次利用渐进因子分析法研究了Ｔａ２Ｏ５／Ｔａ样品的俄歇深度剖析过程，获得了样品中Ｔａ的三种不同化学态Ｔａ、Ｔａ２Ｏ５和ＴａＯｘ，并发现Ｔａ２Ｏ５薄膜中经Ａｒ＋离子束轰击后产生的亚稳态产物ＴａＯｘ的ｘ值为１．６，含量接近４０％。Ｔａ２Ｏ５薄膜在深度剖析中未分解出游离态的Ｔａ成分。     

镀钽TiNi形状记忆合金表面的XPS分析

采用多弧离子镀的方法在Ti 50.6%(原子分数)Ni形状记忆合金表面沉积了钽镀层。通过X射线光电子能谱(XPS)剖面分析发现TiNi合金表面钽镀层厚度均匀,并且在镀层与基体之间形成一薄层过渡层。将镀钽TiNi合金曝露于空气中后,通过XPS的全谱和高分辨谱图对其表面的成分和价态分析发现,镀钽层表面由于钽在空气中自然氧化形成了一层很薄的钽的氧化膜,最表面为高价钽的氧化物(Ta2O5),次表面为低价钽氧化物的混合物TaO2、TaO和TaOx(x<1)。     

Site Occupancy of Alloying Elements and Their Effects on the D03 Phase Stability in Fe3Al

The effects of ternary solutes Ti, Co, V, Cr, Ta, W and Mo on the D03 phase stability of Fe3Al intermetallics are investigated by tight-binding linear Muffin-tin orbital method. The predicted site preferences of these elements in Fe3Al are in agreement with the experimental observations. The calculated local magnetic moment of Fe3Al is identical to the experimental. In addition, it is found that the D03 phase stability of Fe3Al doped with Ti, V, Co and Cr depends on ‘energy gap’ of energy band near Fermi level, while the D03 phase stability of Fe3Al doped with Ta, W and Mo may be affected by Madelung energy.     

Dual DC magnetron cathode co-deposition of (Al,Ti) and (Al,Ti,N) thin films with controlled depth composition

In this work (Al,Ti) and (Al,Ti,N) films with composition gradient in depth starting either with pure Al or pure Ti were deposited on Si, glass and Au at room temperature in a DC magnetron discharge without bias. The plasma parameters, for both custom made cathodes, were determined and the process was real-time controlled to obtain in the plasma the necessary deposition changes in relative metal abundances to get the desired depth profile composition on the films. In this work the process was designed to get a constant gradient for the composition depth profile. The morphology of the films was analysed by SEM while the composition gradients were measured by SIMS, XPS and RBS, confirming preset nominal depth composition profile of the films.To obtain (Al,Ti,N) thin films with gradient depth composition, N₂ must be supplied to the discharges. The plasma behaviour is modified in the presence of N₂ and the influence on the film characteristics is studied using the same techniques referred above.The (Al,Ti) and (Al,Ti,N) film properties are compared. We succeed in validating the coating technique opening new application possibilities.     

Aluminum elution and precipitation in glass vials: effect of pH and buffer species

Inorganic extractables from glass vials may cause particle formation in the drug solution. In this study, the ability of eluting Al ion from borosilicate glass vials, and tendencies of precipitation containing Al were investigated using various pHs of phosphate, citrate, acetate and histidine buffer. Through heating, all of the buffers showed that Si and Al were eluted from glass vials in ratios almost the same as the composition of borosilicate glass, and the amounts of Al and Si from various buffer solutions at pH 7 were in the following order: citrate?>?phosphate?>?acetate?>?histidine. In addition, during storage after heating, the Al concentration at certain pHs of phosphate and acetate buffer solution decreased, suggesting the formation of particles containing Al. In citrate buffer, Al did not decrease in spite of the high elution amount. Considering that the solubility profile of aluminum oxide and the Al eluting profile of borosilicate glass were different, it is speculated that Al ion may be forced to leach into the buffer solution according to Si elution on the surface of glass vials. When Al ions were added to the buffer solutions, phosphate, acetate and histidine buffer showed a decrease of Al concentration during storage at a neutral range of pHs, indicating the formation of particles containing Al. In conclusion, it is suggested that phosphate buffer solution has higher possibility of forming particles containing Al than other buffer solutions.     

铝合金等离子体基离子注入形成AlN/TiN层结构研究

用X射线光电子能谱和小掠射角X射线衍射研究了铝合金LY12等离子体基离子注入形成的AlN/TiN改性层的结构。结果表明 ,N和Ti能注入铝合金表面 ,N在注入层呈类高斯分布 ,而Ti沿注入方向呈梯度递减。后注入的Ti和N对先注入的N的含量和分布有重要影响。同时注入Ti和N ,能在试样表面形成一层稳定的Ti,N层。所形成的AlN/TiN改性层主要由TiO2 ,TiN ,TiAl3 ,Al2 O3 ,AlN相组成     

Deuterium post-metallization anneal of electrochemical-plated Cu film deposited on different barrier materials

In this paper, we report on electrochemical-plated (ECP) copper (Cu) film characterizations with different (Ta, TaN and TiN) barrier materials subjected to post-metallization-annealing (PMA) in deuterium (D₂) under various annealing conditions. For comparison, post-metallization-anneal of the ECP Cu film in pure nitrogen (N₂) and forming gas (20% hydrogen+80% nitrogen) were also performed. We used four-point probe to determine the sheet resistance. Scanning electron microscopy was used to examine the surface morphology of the after-annealed ECP Cu films. X-ray-diffraction (XRD) analysis was used to inspect the texture of the ECP Cu films before and after PMA. The deuterium distribution in the barrier layer was determined by using the secondary ion mass spectroscopy depth profile analysis. We found that under appropriate PMA conditions, the sheet resistance of ECP Cu films deposited on TaN barrier was the lowest after D₂ PMA when compared with those deposited on TiN and Ta barriers.     

基于时域有限差分法的ESP玻璃的钾离子浓度分布的模拟

由于特殊的交换离子浓度分布,工程应力分布玻璃(ESP玻璃)的强度呈现集中分布的特性。为了预测其钾离子浓度的分布,运用了时域有限差分法对其扩散过程进行数值模拟。该模拟是基于测量的扩散系数、玻璃表面浓度以及第一步交换后的钾离子浓度分布进行的。模拟计算的结果与使用能谱仪测量的实验结果相吻合。基于模拟计算的结果,讨论了ESP玻璃的强度与钾离子浓度分布的关系。     

Improvement of Ta-based thin film barriers on copper by ion implantation of nitrogen and oxygen

Magnetron sputtered polycrystalline Ta and Ta(Si) barriers for copper metallization schemes were modified by nitrogen as well as oxygen high dose ion implantation to improve their thermo-mechanical stability. Ion bombardment changed the initial polycrystalline microstructure to amorphous-like. In contrast to pure Ta, Ta(Si) layers were already amorphous or nanocrystalline after deposition. In this case, the annealing temperature at which formation of a well crystallized structure occurs increased by approximately 100 K as a result of the implantation. In order to demonstrate the improvement in the barrier properties of the implanted Ta films, the intermixing of Ta and Cu at the interface of corresponding layer structures was measured as a function of the annealing temperature by depth profiling using Auger electron spectroscopy (AES). The thermal stability of Ta and Ta(Si) barriers increased from 600 °C/1 h for the non-implanted layers up to 750 °C/1 h after implantation of nitrogen or oxygen.