RLVIP技术制备Ge1-xCx薄膜的X射线光电子能谱

应用低压反应离子镀(RLVIP)技术在Ge基底上沉积了Get1-xCx薄膜.制备过程中,低压等离子源作为辅助等离子源,Ge作为蒸发材料,CH4作为反应气体,在相同的沉积条件下以不同的沉积速率制备了C含量(x)从0.23到0.78的Ge1-xCx薄膜.X射线衍射测试表明制备的Ge1-xCx薄膜为无定形结构.用X射线光电子能谱研究了不同C含量下Ce1-xCx薄膜中C的化学键合变化.研究结果表明;当x>0.78时,成键为C-H键;当x为0.53～0.62时,成键为C-C键;当x<0.47时,成键为Ge-C键.     

低压反应离子镀制备Ge1-xCx薄膜的硬度研究

应用低压反应离子镀的薄膜制备方法在G e基底上沉积了G e1-xCx薄膜,随着沉积速度在0.1nm/s~0.9nm/s之间变化,G e1-xCx薄膜的硬度在2.12 GPa~11.066 GPa之间可变,当沉积速率为0.9nm/s时,G e1-xCx薄膜最大硬度为11.066 GPa。XRD测试结果表明,沉积的G e1-xCx薄膜均为无定形结构。对薄膜稳定性和牢固度的测试表明,制备的G e1-xCx薄膜在具有较高的硬度的同时,也有良好的性能。     

沉积压强对类金刚石薄膜组织和性能的影响

使用等离子增强化学气相沉积的方法制备不同沉积压强下的类金刚石薄膜。反应气体为C2H2和CH4,辅助气体为Ar。通过控制气体流量来达到改变沉积压强的目的,沉积压强分别为2.5Pa、3.8Pa、5.0Pa和6.1Pa,为排除其它工艺参数对实验结果的影响,气体流量比C2H2∶CH4∶Ar=2∶2∶1保持不变。使用扫描电镜、拉曼光谱和纳米压痕等检测手段对薄膜的组织和性能进行分析。研究表明,薄膜均为非晶态结构;随着沉积压强的升高,薄膜沉积速率不断提高;随着沉积压强的升高,薄膜的ID/IG值不断下降,说明薄膜中的sp3键含量不断上升,与此同时,薄膜中的硬度和弹性模量不断提高;通过Rockwell压痕法测试膜基结合力,结果表明四组薄膜均有较高的结合力,其中沉积压强为5.0Pa的薄膜的结合力最好。     

沉积温度对脉冲真空弧源沉积类金刚石薄膜性能的影响

利用脉冲真空弧源沉积技术在Cr17Ni14Cu4不锈钢和Si(100)基体上制备了类金刚石(DLC)薄膜,研究了基体沉积温度对DLC薄膜的性能和结构的影响。研究表明,随着沉积温度由100 ℃提高到400 ℃,DLC薄膜中sp3 键质量分数减少,sp2键质量分数增多,薄膜复合硬度逐渐降低。当DLC薄膜沉积温度达到400 ℃时,薄膜中C原子主要以sp2键形式存在,与沉积温度为100 ℃时制备的DLC薄膜相比,薄膜复合硬度降低50%。DLC薄膜具有优异的耐磨性,摩擦因数低,随着沉积温度由100 ℃提高到400 ℃,Cr17Ni14Cu4不锈钢表面沉积的DLC薄膜耐磨性降低。沉积温度为100 ℃时,Cr17Ni14Cu4不锈钢表面沉积的DLC薄膜后,耐磨性大幅度提高。DLC薄膜与不锈钢基体结合牢固。     

常压下用金属有机化学气相沉积法在HP40钢表面制备纳米氧化铝薄膜及表征

常压下用金属有机化学气相沉积法(MOCVD),以仲丁醇铝(ATSB)为前驱体、氮气为载气在HP40钢表面制备了纳米氧化铝薄膜;用光学显微镜、扫描电子显微镜及能谱仪、X射线衍射仪、原子力显微镜等研究了沉积温度等参数对氧化铝薄膜沉积速率的影响,并对其形貌进行了观察。结果表明:随着沉积温度从503K升高到713K,薄膜沉积速率从0.1mg·cm~(-2)·h~(-1)增加到0.82mg·cm~(-2)·h~(-1);当沉积温度在593～653K范围内,可获得晶粒尺寸为10～15nm的纳米氧化铝薄膜;反应的表观活化能随氮气与ATSB蒸气混合气流速增加而降低,不同的混合气流速有不同的反应级数,ATSB的反应级为0.7±0.02。     

Ge薄膜性能及其在光子计数成像探测器中的应用

为改善光子计数成像探测器电荷感应层的性能,提高光子计数成像系统的成像质量,分别用直流磁控溅射法(DC)与射频磁控溅射法(RF)制备了不同厚度的Ge薄膜。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、表面轮廓仪、四探针表面电阻测试仪对两种方法所制备的薄膜进行了结构特征与电学性能的表征。结果表明:两种方法所制备的薄膜均为非晶态结构,DC制备的Ge薄膜比RF制备的Ge薄膜稀疏,其不同膜厚下的电阻率均大于RF所制备的薄膜。实验显示,薄膜越厚其电学性能受氧化影响越小,电学性能越稳定。实验对比了不同方阻下Ge薄膜应用于探测器的成像性能,结果表明:方阻在百兆级范围内时成像效果较好,且方阻变化时成像效果变化不大,但方阻大到2GΩ/□时会导致系统分辨率下降。     

氩气对金刚石膜碳价键、粒径和表面形貌的影响

为调整微钻表面金刚石薄膜的晶粒尺寸和粗糙度以满足PCB板钻孔的工况要求,调节氩气和氢气流量比,采用热丝化学气相沉积法,以甲烷、氢气及氩气为气源在硅基体上沉积出一系列金刚石薄膜。利用拉曼光谱仪、X射线衍射仪(XRD)、扫描电子显微镜(SEM)及原子力显微镜(AFM),分别表征不同氩气流量下制备的金刚石薄膜的碳价键结构、晶面取向、晶粒尺寸和表面粗糙度。结果表明:随着氩气流量增大,金刚石薄膜中的石墨含量呈升高趋势,薄膜趋向(111)晶面择优生长,晶粒尺寸从微米级(1. 27μm)细化至纳米级,薄膜粗糙度先升高后降低,最低为65 nm。研究表明,存在最优的氩气流量使得制备的薄膜具有适宜的结构特点,如碳价键含量高、(111)晶面取向度高、晶粒尺寸小和粗糙度低,可满足PCB板超细钻孔的要求。     

氩气与氮气流量比对磁控溅射法制备TiN薄膜的影响

用直流反应磁控溅射法在Si(100)基底上制备了TiN薄膜,采用X射线衍射仪和原子力显微镜对其结构和形貌进行了表征,利用四探针测试仪测量了TiN薄膜的方块电阻,使用紫外可见分光光度计测定了薄膜反射率;研究了溅射沉积过程中氩气与氮气流量比对TiN薄膜结构及性能的影响.结果表明:在不同氩气与氮气流量比下,所制备薄膜的主要组成相是(200)择优取向的立方相TiN;随着氩气与氮气流量比的增加,薄膜厚度逐渐增大,而表面粗糙度与电阻率先减小后增大;当氩气与氮气流量比为15:1时,薄膜表面粗糙度和电阻率均达到最小值;TiN薄膜的反射率与氩气与氮气流量比的关系不大.     

沉积气压对W-S-C复合薄膜结构和摩擦学性能的影响

采用磁控溅射方法制备W-S-C复合薄膜,研究沉积气压对薄膜结构和摩擦学性能的影响。结果表明,复合膜以非晶或纳米晶结构生长,沉积气压低时薄膜中C含量高,薄膜结构致密;沉积气压高时薄膜中WSx含量高,薄膜致密性下降。复合膜硬度在HV420～500之间,并且随着沉积气压的增加,硬度逐渐下降。在潮湿大气中的摩擦磨损实验表明,实验载荷越大摩擦因数越小;随着沉积气压的增加,复合膜的摩擦因数先降低后增加;当沉积气压在0.45～0.55 Pa时,复合膜的摩擦因数最低约为0.1,耐磨性能最好。     

CVD-Si3N4薄膜工艺及性能研究

以三氯硅烷和氨气作为硅源和氮源，利用低压化学气相沉积工艺（LPCVD）在烧结氮化硅表面制备氮化硅薄膜。考察了工艺参数对沉积速率的影响，并对薄膜的组成、结构及硬度等性能进行了分析。结果表明，当载气为N2或N2＋H2、沉积温度为800℃、NH3／HSiCl3流量比为4时是较佳的工艺条件，此时薄膜沉积速率可达23．4nm／min，其膜层主要由Si-N组成，并含有部分Si-O，硬度为HV2865。     

Growth and properties analysis of metal-organic chemical vapor deposited MgZnO films on -AlO substrates

Mg_xZn_1-xO (0 < x ? 0.12) thin films with the wurtzite structure have been successfully grown on c-Al₂O₃ substrates by metal-organic chemical vapor deposition (MOCVD). X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), photoluminescence (PL) spectrometry, and transmission measurements are performed to study the characteristics of Mg_xZn_1-xO thin films. Results show that with increasing Mg content, the diffraction peak of Mg_xZn_1-xO thin films shifts towards a higher diffraction angle (the biggest shift is 0.22°), and the full width at half maximum (FWHM) of the diffraction peak is broadened. Meanwhile, a blue-shift occurs at the near-band-edge (NBE) emission peak and the largest blue-shift of the band gap of the Mg_xZn_1-xO films is 113 meV with Mg content x = 0.12. Therefore, the energy band gap of the Mg_xZn_1-xO films is determined by Mg content in the thin films and the energy band gap increases with an increase of Mg content.     

电子束蒸发沉积碲锗铅薄膜的微结构和化学组分研究

为了探寻碲锗铅(Pb_(1-x)Ge_xTe)薄膜的最佳沉积方式,在硅基片上采用电子束蒸发沉积碲锗铅(Pb_(0.78)Ge_(0.22)Te)薄膜。使用X射线衍射(XRD)、电子扫描显微镜(SEM)、能量散射X射线分析(EDAX)等手段对薄膜的微结构和化学配比特性进行了分析。发现碲锗铅薄膜为多晶结构,具有明显的择优取向,晶粒多为矩形,薄膜中未出现其它相关氧化物。与热蒸发膜层相比,电子束蒸发沉积的膜层有更为完善的晶体结构。     

A comparative study on the microstructure and tribological properties of Si3N4 and TiN films produced by the IBED method

The tribological properties of Si₃N₄ and TiN thin films produced by ion beam enhanced deposition (IBED) were compared on a SRV friction and wear testing machine. The friction coefficient of all thin films shows a descending tendency with increase in load, and is lower than that of 52100 steel. All the IBED films show a much better wear resistance than 52100 steel, especially in the higher load and frequency ranges; it can reach six times that of the latter. In order to understand the reasons for their excellent properties, the microstructure, microhardness and bonding strength with the substrate were analysed by SEM, X-ray diffraction, Knoop hardness and scratching test methods separately. The results show that the TiN(1) film exhibits the best tribological properties, which are closely related with its greater hardness and bonding strength.     

Imaging of fullerene-like structures in CNx thin films by electron microscopy; sample preparation artefacts due to ion-beam milling

The microstructure of CN(x) thin films, deposited by reactive magnetron sputtering, was investigated by transmission electron microscopy (TEM) at 200kV in plan-view and cross-sectional samples. Imaging artefacts arise in high-resolution TEM due to overlap of nm-sized fullerene-like features for specimen thickness above 5nm. The thinnest and apparently artefact-free areas were obtained at the fracture edges of plan-view specimens floated-off from NaCl substrates. Cross-sectional samples were prepared by ion-beam milling at low energy to minimize sample preparation artefacts. The depth of the ion-bombardment-induced surface amorphization was determined by TEM cross sections of ion-milled fullerene-like CN(x) surfaces. The thickness of the damaged surface layer at 5 degrees grazing incidence was 13 and 10nm at 3 and 0.8keV, respectively, which is approximately three times larger than that observed on Si prepared under the same conditions. The shallowest damage depth, observed for 0.25keV, was less than 1nm. Chemical changes due to N loss and graphitization were also observed by X-ray photoelectron spectroscopy. As a consequence of chemical effects, sputtering rates of CN(x) films were similar to that of Si, which enables relatively fast ion-milling procedure compared to carbon compounds. No electron beam damage of fullerene-like CN(x) was observed at 200kV.     

Growth and properties analysis of metal-organic chemical vapor deposited MgxZn1-xO films on C-Al2O3 substrates

Mg_xZn_1−xO (0 〈 x ⩽ 0.12) thin films with the wurtzite structure have been successfully grown on c-Al₂O₃ substrates by metal-organic chemical vapor deposition (MOCVD). X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), photoluminescence (PL) spectrometry, and transmission measurements are performed to study the characteristics of Mg _x Zn_1−x O thin films. Results show that with increasing Mg content, the diffraction peak of Mg _x Zn_1−x O thin films shifts towards a higher diffraction angle (the biggest shift is 0.22°), and the full width at half maximum (FWHM) of the diffraction peak is broadened. Meanwhile, a blue-shift occurs at the near-band-edge (NBE) emission peak and the largest blue-shift of the band gap of the Mg _x Zn_1−x O films is 113 meV with Mg content x50.12. Therefore, the energy band gap of the Mg _x Zn_1−x O films is determined by Mg content in the thin films and the energy band gap increases with an increase of Mg content.     

利用Pb1-xGexTe材料的折射率异常性质改善红外光学薄膜的低温性能

红外薄膜干涉滤光片性能在低温下的变化是空间遥感系统中的一个关键性问题。经研究表明IV-VI族半导体PbTe和GeTe的赝二元合金Pb1-xGexTe在铁电相变点具有折射率异常—相应于铁电相变,Pb1-xGexTe薄膜呈现出最大折射率值。用Pb0.94Ge0.06Te材料代替PbTe材料,制作了一个红外薄膜干涉滤光片。测试结果表明:其中心波长漂移从0.48nm/K改进到0.23nm/K,在所测量的80K～300K的温度范围,用Pb0.94Ge0.06Te材料制作的滤光片的峰透过率高于用PbTe材料制作的滤光片约3%,从而极大地改善了光学薄膜器件在深低温环境下的稳定性和可靠性。     

Adhesion Between Surfaces Separated by Molecularly Thin Perfluoropolyether Films

The relationship between the adhesion of surfaces separated by a molecularly thin liquid film and the surface energy of the film was investigated. AFM-based force–distance curves were measured on a series of carbon surfaces coated with hydroxyl-terminated perfluoropolyether (PFPE) films. The surface energy of the PFPE films was varied by altering either the total film thickness or the bonding ratio of the film by changing the concentration of the PFPE film in the solution and/or the pull-rate during dip-coating. A linear relationship between adhesion force and surface energy was observed. Adhesion was found to vanish at non-zero values of surface energy. The experimental results indicate that the adhesive force between macroscopic bodies separated by molecularly thin liquid films is linearly proportional to the excess surface energy of the film.     

Carbon Overcoat: Structure and Bonding of Z-DOL

Carbon films (100 Å thick) sputter-deposited on silicon coupons were examined by ESR. Based on the results obtained and conclusions reported earlier in the literature, it is concluded that sputter-deposited carbon films are best described as stacks of closely packed spheroidal granules with diametric dimension of several nanometers. Individual granules would have either the graphitelike or diamondlike bonding scheme, and dangling bonds are hosted in the diamondlike granules. Z-DOL bonding occurs when a hydrogen atom is transferred from the hydroxyl group of Z-DOL to a dangling bond. The effect of exposing freshly prepared carbon film to Z-DOL vapor without prior exposure to air, the effect of argon pressure during sputtering, the effect of discharge current, and the effect of hydrogen or nitrogen in the discharging media (argon) are discussed and/or analyzed in terms of the granular structural model.     

Loss budget of a setup for measuring mechanical dissipations of silicon wafers between 300 and 4 K

A setup for measuring mechanical losses of silicon wafers has been fully characterized from room temperature to 4 K in the frequency range between 300 Hz and 4 kHz: it consists of silicon wafers with nodal suspension and capacitive and optical vibration sensors. Major contributions to mechanical losses are investigated and compared with experimental data scanning the full temperature range; in particular, losses due to the thermoelastic effect and to the wafer clamp are modeled via finite element method analysis; surface losses and gas damping are also estimated. The reproducibility of the measurements of total losses is also discussed and the setup capabilities for measuring additive losses contributed by thin films deposited on the wafers or bonding layers. For instance, assuming that additive losses are due to an 80-nm-thick wafer bond layer with Young modulus about ten times smaller than that of silicon, we achieve a sensitivity to bond losses at the level of 5x10(-3) at 4 K and at about 2 kHz.     

反应溅射气体对Ni、Ti薄膜成膜特性的作用机制

反应溅射是降低薄膜表面和界面粗糙度的有效手段。为了研究反应溅射过程中氮气(N2)含量对所制备的Ni、Ti单层膜成膜特性的作用机制,利用掺氮气的反应直流磁控溅射方法制备了Ni和Ti的单层膜样品。首先,采用X射线光电子能谱(XPS)方法测量了Ni和Ti单层膜样品的组分。其次,基于样品的组分测量结果,结合X射线掠入射反射(XRR)方法对样品的厚度和表面粗糙度进行了测量与分析。实验结果表明,随着反应溅射中氮含量的增大,Ti膜的沉积速率呈现快速降低后迅速趋于缓慢变化的趋势,而Ni膜的沉积速率几乎没有变化,Ni膜和Ti膜的表面粗糙度都呈现先减小再增大的趋势,且在氮的含量为8%的条件下,表面粗糙度达到最小值。