Microbolometers on a flexible substrate for infrared detection

Uncooled semiconducting YBaCuO infrared microbolometers have been fabricated on a flexible polyimide substrate formed by spin-coating a silicon wafer with a release layer. The wafer was used as a carrier for the flexible substrate during fabrication. The finished microbolometers on the flexible substrate showed a temperature coefficient of resistance (TCR) TCR =(1/R)(dR/dT) of -3.03% K/sup -1/, at room temperature, which is comparable to the TCR values observed for semiconducting YBaCuO microbolometers fabricated directly on Si. In order to provide protection and better mechanical integrity, some of the devices were encapsulated. The microbolometers attained a responsivity and detectivity as high as 3.5/spl times/10/sup 3/ V/W and 1/spl times/10/sup 7/ cm/spl middot/Hz/sup 1/2//W, respectively, at 2.88 /spl mu/A of current bias. The responsivity and detectivity of the encapsulated microbolometers, on the other hand, were 1.6/spl times/10/sup 3/ V/W and 4.9/spl times/10/sup 6/ cm/spl middot/Hz/sup 1/2//W, respectively at 1 /spl mu/A of current bias. Spin-coated liquid polyimide solved two major problems previously encountered with the solid polyimide sheets when used as a flexible substrate. First, flatness of the flexible substrate was maintained with no air bubbles. Second, the thermal expansion of the flexible substrate during the fabrication process due to thermal cycling was minimal. All measurements reported in this paper, were taken prior to releasing the flexible substrate from the Si wafer containing the finished microbolometers.     

聚苯醚/钙镧钛微波复合基板

微波复合基板兼具树脂基体的高韧性和陶瓷填料优异的介电和热学性能, 是航空航天、电子对抗、5G通讯等领域的关键材料。本工作采用螺杆造粒与注塑成型相结合的新技术制备了聚苯醚(简写为PPO)为基体、钙镧钛(Ca_0.7La_0.2TiO₃, 简写为CLT)陶瓷为填料的新型微波复合基板, 并对基板的显微结构、微波介电性能、热学性能和力学性能进行表征。结果表明, 采用这种新技术制备的微波复合基板组成均匀且结构致密。随着CLT陶瓷的体积分数从0增大至50%, 基板的介电常数从2.65提高到12.81, 介电损耗从3.5×10 ^-3降低至2.0×10 ^-3 (@10GHz); 同时热膨胀系数从7.64×10 ^-5 ℃ ^-1显著降低至1.49×10 ^-5 ℃ ^-1, 热导率从0.19 W·m ^-1·K ^-1提高至0.55 W·m ^-1·K ^-1; 此外抗弯强度从97.9 MPa提高至128.7 MPa。填充体积分数40%CLT陶瓷的复合基板综合性能优异: ε_r=10.27, tanδ=2.0×10 ^-3(@10GHz), α=2.91×10 ^-5 ℃ ^-1, λ=0.47 W·m ^-1·K ^-1, σ_s=128.7 MPa, 在航空航天、电子对抗、5G通讯等领域具有良好的应用前景。     

Bi0.5Sb1.5Te3/环氧树脂柔性复合热电厚膜的制备及其面内制冷性能

利用丝网印刷法在聚酰亚胺基板上制备了Bi_0.5Sb_1.5Te₃/环氧树脂柔性复合热电厚膜, 通过优化Bi_0.5Sb_1.5Te₃粉末含量提高了其电输运性能。复合厚膜在300 K时的最优功率因子达到1.12 mW·m ^-1·K ^-2, 较前期报道的数值提高了33%。抗弯测试表明复合厚膜的电阻在弯曲半径大于20 mm时基本不变, 在弯曲半径为20 mm, 弯曲次数小于3000次时, 仅有轻微增大, 说明其在柔性热电器件领域具有应用潜力。红外热成像技术显示, 在工作电流为0.01 A到0.05 A时, 复合厚膜热电臂两端可以形成4.2 ℃到7.8 ℃的温差, 表明了其在面内制冷领域应用的可能性。     

(Sm0.2Gd0.2Dy0.2Y0.2Yb0.2)3TaO7高熵陶瓷的制备及热物理性能

寻求具有良好热物理性能的新型陶瓷材料是热障涂层领域的研究热点之一.本研究采用固相反应法制备了(Sm0.2Gd0.2Dy0.2Y0.2Yb0.2)3TaO7高熵陶瓷材料,对其晶体结构、显微组织、元素分布、结构稳定性和热物理性能进行了研究.结果表明:制备的高熵陶瓷具有单一的缺陷萤石结构,元素分布均匀,晶粒尺寸在0.2～3μ...     

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

In this work, high concentration erbium doping in silicon-rich SiO₂ thin films is demonstrated. Si plus Er dual-implanted thermal SiO₂ thin films on Si substrates have been fabricated by using a new method, the metal vapor vacuum arc ion source implantation with relatively low ion energy, strong flux and very high dose. X-Ray photoelectron spectroscopy measurement shows that very high Er concentrations on the surfaces of the samples, corresponding to 10 at.% or the doping level of 10²¹ atoms cm⁻³, are achieved. This value is much higher than that obtained by using other fabrication methods such as the high-energy ion implantation and molecular beam epitaxy. Reflective high-energy electron diffraction, atomic force microscopy and cross-section high-resolution transmission electron microscopy observations show that the excess Si atoms in SiO₂ matrix accumulate to form Si clusters and then crystallize gradually into Si nanoparticles embedded in SiO₂ films during dual-ion implantation followed by rapid thermal annealing. Er segregation and precipitates are not formed. Photoluminescence at the wavelength of 1.54 μm exhibits very weak temperature dependence due to the introduction of Si nanocrystals into the SiO₂ matrix. The 1.54-μm light emission signals from annealed samples decrease by less than a factor of 2 when the measuring temperature increases from 77 K to room temperature.     

基于单根TaON纳米带的光晶体管与紫外到近红外响应

用Ta₂O₅ 纳米带模板转化法控制合成TaON纳米带, 典型的纳米带长约0.5 cm, 横截面积40 nm×200 nm~ 400 nm×5600 nm。在SiO₂/Si基片上加工出TaON单根纳米带的场效应晶体管; 该晶体管的电子迁移率和开关比分别为9.53×10 ^-4cm ²/(V·s)和3.4, 在254~850 nm范围内显示良好的光响应。在405 nm (42 mW/cm ²)的光照下, 外加5.0 V的偏压时, 光响应为249 mA/W, 光开关比为11。因此, 该器件具有良好的光探测性, TaON纳米带可作为光电子器件的候选材料。另外, 实验还控制合成出Ta₂O₅@TaON纳米带, 并加工成单根纳米带的场效应晶体管, 虽然相同光照条件下的光响应弱于TaON 纳米带, 但仍算是一种好的光电材料。     

共沉淀纳米粉体制备Yb:CaF2激光陶瓷及其性能研究

利用共沉淀法合成的粉体, 通过真空烧结结合热压烧结后处理制备了掺镱的氟化钙透明陶瓷(Yb:CaF₂)。在600 ℃预烧1 h, 700 ℃热压烧结2 h制备的5at%Yb:CaF₂透明陶瓷在1200 nm处的直线透射率达到92.0%。对陶瓷的显微结构、光谱特性和激光性能进行了测试和讨论。研究结果表明, 陶瓷样品的显微结构均匀, 平均晶粒尺寸为360 nm。此外, 计算得到Yb:CaF₂陶瓷在977 nm处的吸收截面和1030 nm处的发射截面分别为0.39×10 ^-20和0.26×10 ^-20cm ²。最后, 对Yb:CaF₂陶瓷激光性能进行了表征, 得到最大输出功率为0.9 W, 最大斜率效率为23.6%。     

退火条件对磁控溅射MgO-Ag3Sb-Sb2O4柔性薄膜热电性能的影响

MgAgSb是一种具有潜力且元素储量相对丰富的室温热电材料, 有望用于构建高性能可穿戴温差电池。本研究尝试在聚酰亚胺(PI)基底上磁控溅射制备MgAgSb薄膜, 并系统研究退火条件对其热电性能的影响。结果表明样品未形成纯相的MgAgSb柔性热电薄膜, 而是形成了由Ag₃Sb、MgO及Sb₂O₄多相组成的柔性薄膜, 其中Ag₃Sb起主要热电功能。不同气氛退火可以显著提升MgO-Ag₃Sb-Sb₂O₄ (Mg-Ag-Sb)柔性薄膜的热电性能, 其中真空处理性能最佳。在真空条件下, 随着退火温度升高, 柔性薄膜的热电性能呈现先增加后减少的趋势, 当退火温度为573 K时热电性能最佳, 室温附近功率因子达到74.16 μW∙m^-1∙K^-2。并且, 薄膜表现出较好的柔性, 弯曲900次后, 电导率仅变化了14%。本研究为MgAgSb柔性热电薄膜的制备及可穿戴应用提供了参考。     

稀土氧化物对常压烧结氮化硅陶瓷性能的影响

高导热氮化硅陶瓷是大功率电力电子器件散热的关键候选材料。研究采用稀土氧化物(Re₂O₃)和氧化钛(TiO₂)烧结助剂体系, 通过低温常压烧结方法来制备氮化硅陶瓷, 以有效降低成本, 满足实际应用的需求。系统研究了烧结助剂种类及含量对Si₃N₄陶瓷的致密化行为、热导率、显微结构以及力学性能的影响。研究发现随着稀土离子半径的增大, 材料的致密度和热导率均呈现下降趋势, 添加Sm₂O₃后样品最高密度仅为3.14 g/cm³。但是当Sm₂O₃-TiO₂烧结助剂含量为8wt%时, 样品断裂韧性可达5.76 MPa•m^1/2。当添加Lu₂O₃且烧结助剂含量为12wt%时, 材料的密度可达3.28 g/cm³, 但是大量存在的第二相导致热导率仅为42.3 W/(m∙K)。研究发现该材料具有良好的断裂韧性。经1600℃退火8 h后, Er₂O₃-TiO₂烧结助剂样品的热导率达到51.8 W/(m∙K), 基本满足一些功率电路基板材料的实际应用需求。     

毫米波功率计量标准器芯片的研制

针对毫米波WR-6波段功率标准器核心芯片需求,设计了芯片整体结构,研究了结构中各层的微加工工艺,制备了温度传感用Pt薄膜,在250 ℃退火后,100 nm Pt薄膜的电阻温度系数(TCR)达到2.4×10^-3/K,相对稳定度为2.4×10^-6。安装在毫米波功率标准器上的芯片对110～170 GHz的反射率低于-23 dB。直流功率灵敏度为0.83 mΩ/mW。     

PdSe2半导体薄膜的真空硒化法制备研究

PdSe2薄膜主要通过机械剥离法和气相沉积法制得,本研究采用一种简单有效的可在SiO2/Si衬底上制备PdSe2薄膜的方法.通过高真空磁控溅射技术在SiO2/Si衬底上沉积一层Pd金属薄膜,将Pd金属薄膜与Se粉封在高真空的石英管中并在一定的温度下进行硒化,获得PdSe2薄膜.根据截面高分辨透射电镜(HRTEM)照片可...     

聚酰亚胺改性C/C复合材料的制备及性能

采用针刺成型、化学气相渗透（CVI）、真空浸渍及固化成型工艺制备了C/C-聚酰亚胺（C/C-PI）复合材料,研究了这种新型防热结构材料的弯曲性能、导热性能及热膨胀性能。结果表明:C/C-PI复合材料XY向和Z向弯曲强度分别为120.75 MPa和40.33 MPa,较C/C复合材料分别提高了17.92%和20.57%,表现出更优异的弯曲性能;C/C-PI复合材料热导率随温度变化不显著,XY向和Z向热导率均在150℃达到最大值,分别为29.88 W（m·℃）-1和9.93 W（m·℃）-1,较C/C复合材料分别降低了47.02%和56.12%;随温度升高,C/C-PI复合材料的线膨胀系数呈线性缓慢增长,数值保持低于4×10-6 K-1,尤其XY向较Z向具有更低的线膨胀系数,可满足热结构件尺寸稳定性的使用需求。      

Gd2Zr2O7陶瓷的高温热物理性能及Gd2Zr2O7-8YSZ双涂层制备

通过高温固相合成方法制备了烧绿石结构Gd₂Zr₂O₇陶瓷材料,研究了其高温相稳定性和热物理性能。采用电子束物理气相沉积方法制备了Gd₂Zr₂O₇-8YSZ(8%Y₂O₃-ZrO₂)双陶瓷层结构热障涂层,分析了涂层顶层的晶体结构和原子数量比。结果表明,Gd₂Zr₂O₇在室温至1500℃范围内具有良好的相稳定性,比第一代热障涂层8YSZ的高温相稳定区间提高250℃以上。Gd₂Zr₂O₇块材的热膨胀系数在100~1500℃范围内介于8.8×10^-6~11.0×10^-6 K^-1之间,与8YSZ接近; 在1000~1400℃高温区间,热导率约为1.0 W(m·K)^-1,比8YSZ降低一半左右。沉积制得的Gd₂Zr₂O₇涂层化学成分符合化学计量比,为烧绿石结构,涂层呈现典型的柱状晶结构。     

Noise Characteristics of ZnO-Nanowire Photodetectors Prepared on ZnO:Ga/Glass Templates

In this paper, we report the fabrication of vertically well-aligned ZnO nanowire ultraviolet (UV) photodetectors on ZnO:Ga/glass templates. With 1 V applied bias, it was found that dark current density of the device was only 1.37times10^-7 A/cm². It was also found that UV-to-visible rejection ratio of the fabricated photodetector was around 1000 with a maximum quantum efficiency of 12.6%. It was also found that noise equivalent power and normalized detectivity of the ZnO nanowire photodetector were 5.73times10^-11 W and 6.17times10⁹ cmHz^0.5W^-1, respectively.     

Surface-micromachined pyroelectric infrared imaging array withvertically integrated signal processing circuitry

Surface-micromachining techniques have been used in the fabrication of a 64×64 element PbTiO₃ pyroelectric infrared imager. Polysilicon microbridges of 1.2 μm-thickness have been formed 0.8 μm above the surface of a silicon wafer. Each of the 4096 polysilicon microbridges measures 50×50 μm² and forms a low thermal mass support for a 30×30 μm² PbTiO₃ pyroelectric capacitor with a thickness of 0.36 μm. The air-bridge formed reduces the thermal conduction path between the detector element and substrate. An NMOS preamplifier cell is located directly beneath each microbridge element. The measured blackbody voltage responsivity at 30 Hz is 1.2×10⁴ V/W. The corresponding measured normalized detectivity (unamplified) D* is 2×10⁸ cm-Hz^1/2W at 30 Hz. The test chip fabricated measures 1×1 cm² and contains more than ten thousand transistors and 4096 micromechanical structures with integrated ferroelectric microsensors. The technique of stacking of microsensors and integrated circuits represents a new approach for achieving high-density and high-performance integrated pyroelectric microsensors through minimization of circuit to sensor interconnection with extremely small thermal crosstalk     

热激活延迟荧光材料敏化的螺烯对映体有机发光二极管:一种提高电致圆偏振发光效率的新策略

为了提高基于手性荧光分子的有机圆偏振发光二极管(CPOLED)器件效率,本文提出了一种全新的热激活延迟荧光材料敏化圆偏振发光(TAS-CPL)的策略.设计合成了一对具有刚性骨架的螺烯对映体(P)-HAI和(M)-HAI作为器件的手性发光客体,研究发现螺烯对映体具有高的热稳定性、手性构型稳定性、良好的光物理性质,尤其是具...     

A new low-field determination of the proton gyromagnetic ratio inwater

The proton gyromagnetic ratio in water has been measured by the low field method using atomic magnetic resonance in ⁴He, a multicurrent solenoid and an induction method for the dimensional measurement of the solenoid. The result for air and vacuum environment is γ'_p (low, air)=2.67515451×10⁸ s^-1 T^-1 (0.18×10^-6), γ'_p (low, vacuum)=2.67515418×10⁸ s^-1 T^-1 (0.18×10^-6), based on the adopted values K_J-90=483597.9 GHz/V, R_K-90=25812.807 Ω, and measured values γ(⁴ He)/γ'_p=658.200556, γ(⁴He) (air)=1760.78819×10⁸ s^-1 T^-1 (0.18×10^-6), K_J-90, R_K-90     

高光效、大功率LEDs/LDs用Ce:YAG透明陶瓷

Ce:YAG透明陶瓷可与蓝光LEDs/LDs复合, 用于大功率白光LEDs/LDs。本研究通过调整Ce:YAG透明陶瓷的厚度和Ce³⁺的掺杂浓度, 将组装器件的发射光谱和色坐标从冷白区调整到暖白区。以高纯(≥99.99%)商业粉体α-Al₂O₃、Y₂O₃、CeO₂为原料, 采用固相反应法制备了(Ce_xY_1-x)₃Al₅O₁₂ (x=0.0005、0.0010、0.0030、0.0050、0.0070和0.0100)透明陶瓷。陶瓷素坯在1750 ℃真空烧结20 h(真空度5.0×10^-5 Pa), 之后在马弗炉中退火1450 ℃×10 h。不同掺杂浓度Ce:YAG陶瓷(厚度分别为0.2、0.4、1.0 mm)在800 nm处的直线透过率均大于79%。Ce:YAG荧光陶瓷的热导率随着测试温度和掺杂浓度的增加而降低。采用有限元方法模拟不同厚度的Ce:YAG陶瓷和LED组装的热分布, 比较了三种封装方式的热分布。将Ce:YAG荧光陶瓷与LEDs/LDs复合, 制备出色坐标分别为(0.3319, 0.3827)和(0.3298, 0.3272)的白光, 发光效率分别为122.4和201.5 lm/W。将Ce:YAG荧光陶瓷和10、50 W商用蓝光LED芯片组合成熟灯具, 可用于商业用途。Ce:YAG透明陶瓷在大功率照明和显示的彩色转换材料应用领域极具潜力。     

双沟道层对氮掺杂非晶氧化铟锌薄膜晶体管的影响

采用射频磁控溅射法, 在热氧化p型硅基片上制备了双沟道层非晶氧化铟锌(a-IZO)和氮掺杂氧化铟锌(a-IZON)薄膜晶体管(TFTs), 并研究了双沟道层对器件电学性能和温度稳定性的影响。研究发现, a-IZO/IZON双沟道层TFTs具有较高的场效应迁移率, 为23.26 cm²/(V•s), 并且其阈值电压相较于单层a-IZO-TFTs正向偏移。这是由于氮掺杂可以减少沟道层中的氧空位, 抑制载流子浓度, 使器件具有更好的阈值电压。而a-IZO层避免了由于氮掺杂导致的场效应迁移率和开态电流的下降, 提升了器件的电流开关比。从298 K至423 K的器件转移特性曲线中发现, 双沟道层器件相较于单沟道层器件的温度稳定性更佳, 这可归因于a-IZON层的保护作用。氮掺杂可以减少氧在背沟道层表面的吸收/解吸反应, 改善器件的稳定性。     

Light emitting devices from organic charge transfer adduct thin films

For the first time, thin film devices of charge transfer adducts of tetrathiafulvalene (TTF) have been fabricated. A luminance of 5 cd m⁻² has been achieved for a device structure ITO/poly(aniline)/TTF(NO₃)_0.55/Al whose EL spectrum has a broad peak at 645 nm. The devices were fabricated by spin coating from solutions of the adducts. A luminous efficiency of 5×10⁻⁴ lm W⁻¹ has been obtained for these devices which is comparable to that of ITO/poly(aniline)/Alq₃/Al (5.2×10⁻⁴ lm W⁻¹) under same fabrication conditions. The single layer, mixed layer and double layer devices fabricated in this study fit the space charge limited model. Devices fabricated from the adduct [TTF–Alq₃] emit white light (40 cd m⁻²) with a luminous efficiency of 6.6×10⁻⁴ lm W⁻¹. The colour of light emitted appears to depend on the effective oxidation state of TTF in the adducts.