Shielding effectiveness measurements of materials using nested reverberation chambers

The use of reverberation chambers for determining the shielding effectiveness has the advantage over other techniques in that the reverberation chamber exposes the material to a more realistic environment. That is, in a reverberation chamber, the fields are incident on the material with various polarizations and angles of incidence. There are various reverberation chamber techniques found in the literature and international standards. These techniques can give incorrect results because aperture and cavity-size effects are not correctly accounted for. In fact, we show that for no sample in the aperture, these techniques give a nonzero result for shielding effectiveness. In this paper, we review existing techniques and present a new technique for determining the shielding effectiveness of materials from nested reverberation-chamber measurements. The new approach accounts for aperture, cavity size, and chamber loading effects. Various examples are presented to illustrate the utility of the new approach, and a discussion on edge treatments of the materials is given.     

Simulation of dual array multipath channels using mode-stirred reverberation chambers

A new way to experimentally simulate propagation channels between antenna arrays using coupled mode-stirred reverberation chambers is presented. This technique, which can be performed in a laboratory facility, is simple to use and allows the easy modification of the channel characteristics.     

Effect of local stir and spatial averaging on measurement andtesting in mode-tuned and mode-stirred reverberation chambers

The effect of local averaging in mode-tuned and mode-stirred reverberation chambers is investigated, under the assumption of a wide-sense stationary statistical cavity field. The analysis is based on the characterization of the tuning or stirring process in the spectral spatial domain and in the spectral stir domain. The variance function, scale of fluctuation, optimum sampling rate, and normalized spectral bandwidths are computed for each case, based on the modeled power spectral-density function. This second-order analysis enables the effect of local averaging on the point-interval correlation, mean and standard deviation of the maximum test level, upward threshold crossing frequency, time to first passage and mean excursion length to be quantified. The theoretical results for quantifying EUT reliability are illustrated and compared with measured data. The results provide guidelines for the maximum tolerable sensor aperture and stirrer step sizes for mode tuning, and sampling rate and sampling width for mode stirring in chamber calibration and EMC emissions and susceptibility testing     

The optimization of on-wafer shield-based test fixture layout

The effect of layout design on shield-based test fixture parasitic components is studied in this paper. As a result, guidelines for shield-based test fixture layout design are given. The novel test fixture layout details studied in this paper are a slotted ground plane with different slot orientation, the use of ground-bar extensions in a ground-shielded test fixture, and the upgrade of a ground-shielded test fixture to a fully shielded structure with a common ground. It was found that a slotted ground plane does not increase the ground lead impedance significantly. Thus, successful ground-shielded test fixture processing can be ensured by obeying process stress release design rules. Furthermore, the additional ground bar extensions had a negligible effect on reducing the ground-shielded test fixture ground lead impedance. However, upgrading the ground-shielded test fixture structure to fully shielded reduced the ground lead impedance. Therefore, fully shielded test fixtures are proposed for use with two-port cascade-based deembedding methods, which commonly are incapable of taking into account ground lead parasitic components.     

Comments on "Investigation of the field uniformity of a mode-stirred chamber using diffusors based on acoustic theory"

In the above paper [see ibid., vol. 41, p. 446-51, 1999] a particular type of reflection grating, viz., Schroeder diffusers of the quadratic-residue type (QRDs), was proposed with the aim of improving field uniformity inside mode-tuned or mode-stirred reverberation chambers. While an improvement of the field homogeneity (but not necessarily the field isotropy) was demonstrated, some facts about the design and application of this type of pseudorandom diffractor (PRDs) appear to have been overlooked.     

Lateral current crowding effects on contact resistance measurements in four terminal resistor test patterns

Lateral current crowding effects on contact resistance measurements in four terminal resistor patterns are discussed by using a computer model based on a three-dimensional resistor network. The model is then applied to extrapolate the contact resistivity in n+, p+ silicon/titanium silicide interfaces. Values in agreement with the ones predicted by the field and thermionic field emission theory are obtained.     

The measurement of self-focusing parameters using intrinsic optical damage

A new method for measuring the self-focusing parameters of transparent materials is reported. The technique consists of using lenses with different focal lengths to induce intrinsic bulk damage at low powers where catastrophic self-focusing is absent and then comparing the results to analytical calculations. Using this technique, the self-focusing parameters for sapphire are determined.     

Analysis of floating substrate effects on the intrinsic gatecapacitance of SOI MOSFETSs using two-dimensional device simulation

Points out that the theoretical foundation of unique floating substrate effects, which have been observed experimentally, on the intrinsic gate capacitance characteristics of SOI n-MOSFETs has been clearly established using original two-dimensional device simulations. A transient simulation scheme for calculating intrinsic capacitances is introduced and tested against the classical quasi-static and small-signal analyses. The results are discussed and used to gain a deep physical insight into the basic mechanisms responsible for the anomalous (when compared to conventional bulk devices) intrinsic capacitances observed in the case of SOI MOSFETs. The analyses yields basic guidelines for an adequate analytical modeling of SOI MOSFET capacitive behavior to be used for accurate large- and small-signal simulation of SOI MOS digital and analog circuits     

The effect of test system impedance on measurements of groundbounce in printed circuit boards

Based on the 3D-FDTD approach, an efficient equivalent model employing the embedded resistive voltage source is proposed to simulate the effect of test system impedance on the measurement of the ground bounce noise for the power planes structure in the printed circuit boards (PCB). Compared with the measured results by vector network analyzer, this equivalent model well predicts the impedance behavior of the V_cc/GND power planes. The influences of different probe loading conditions of the test system on the measurement of impedance behavior are studied. It is found that the effects of the probing loads on the measurement of the ground bounce noise is significant at the frequencies near the dc point and resonance, but the influences of the probes are small at the frequencies far from resonance. In addition, the transfer characteristics of the power bus in the realistic digital circuits with decoupling capacitance being considered are simulated in the FDTD model. The difference of the transfer behavior between the realistic case without coaxial feed and the measured results with probing effects is also numerically compared. We find that the ground bounce noise in the real circuit can be accurately measured at most frequencies, where the power planes act in very low impedance, except at the frequencies near dc and resonance frequencies, where the power planes behave in relatively higher impedance characteristics     

The bidirectional effects of AVHRR measurements over boreal regions

The objectives of this paper are to analyze the bidirectional effects of satellite data over six land-cover types in northern regions, and to test a method for the routine correction of these effects. Analyses and corrections were carried out with both single-day and 10-day composite data obtained by the advanced very high resolution radiometer (AVHRR) from central Canada acquired in 1993/1994, in part, for the boreal ecosystem and atmosphere study (BOREAS). The model of Wu et al. [1995], developed from a separate data set collected at lower latitudes, was employed for correcting the effects. The analysis showed viewing angle dependence in AVHRR channels 1 and 2 from both single-day images and composites. Reflectances at extreme viewing angles are two to four times larger than those observed near nadir. On average, the effects introduce a variation of 30% relative to mean reflectances. Although the effects decrease in the normalized difference vegetation index (NDVI), they are nevertheless significant before the correction. Using the model of Wu et al. [1995], the BRDF-related variability is reduced by about 68% in channel 1 and 71% in channel 2. After a simple adjustment of the model coefficients, a further reduction of 4% (channel 1) and 6% (channel 2) of the BRDF-related variability was achieved for the 10⁶ km² BOREAS region. The effectiveness of the correction with both original and refined model of Wu et al. was found to be weakly dependent on land-cover type. Corrections for coniferous, mixed wood, and cropland are better than other land-cover types (rangelands/pasture, deciduous, and transitional forests) with residual BRDF errors around 0.05 in both channels. Overall, the model (albeit simple) performs reasonably well throughout the growing season. To apply the model, only general knowledge of land-cover type is required, namely forest, cropland, grassland, and bare ground     

The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures

Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 μm. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures.     

络合剂对NASICON材料的影响

摘要:采用以无机盐为基础的新型溶胶-凝胶法合成了固体电解质NASICON材料。合成过程中,通过向原溶液中添加草酸作络合剂,有效降低了烧结温度,缩短了烧结时间。实验中,利用XRD、TEM等分析测试手段对草酸络合剂以及合成产物的影响情况进行了对比研究,对络合剂的作用机理进行了讨论。     

The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode

Semiconductors - In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage...     

The effects of Al doping and post-annealing via intrinsic defects on photoluminescence properties of ZnO:Eu nanosheets

Europium (Eu) and Aluminum (Al) co-doped ZnO nanosheets were synthesized by a hydrothermal method. The effects of Al concentration as a dopant and post-annealing of ZnO:Eu nanosheets on its structural, electrical and optical properties were investigated in detail. Prepared samples were characterized structurally using X-ray diffraction (XRD), morphologically using scanning electron microscopy (SEM) and optically using photoluminescence (PL) spectroscopy analyses. No diffraction peak related to dopants in XRD spectrum along with shift in peaks angles relevant to ZnO proved that Al and Eu ions were doped successfully into ZnO nanosheets. This study recommends that extrinsic doping and intrinsic defects have impressive roles on transferring energy to Eu ions at indirect excitations. Based on photoluminescence observations, intra-4f transitions of Eu³⁺ ions at an excitation wavelength of 390 nm allow a sharp red luminescence. Also the results showed that optical properties of ZnO can be tuned by varying the amount of Al concentration. In comparison with annealed Al doped ZnO:Eu nanostructures, as-grown samples showed the stronger PL peaks which indicated the effective role of intrinsic defects beside of extrinsic doping on energy transfer from ZnO host to Eu³⁺ ions which consequently led to producing the strong red emission from these sites.     

TGA测试条件对Td值的影响

随着欧盟ROHS和WEEE两个指令的正式实施，业界将进入无铅焊接时代，由于焊接温度的提高，对极材耐热性提出更高要求，最近，IPC发布了第二份“无铅”FR-4的标准草案，供业界讨论，征求意见。其中关于CCL热裂解温度测试方法的提案，升温速率由原来的5℃/min改为10℃/min。方法中也规定了样品结构和样品量，以及氨气的纯度（氧气小于20ppm）和水份（小于3.5ppm）。IPC征求对此方法的意见，基于此，生益科技公司应用检验室进行了材料热裂解温度按不同升温速率和不同测试气体氛围的对比，并对一些典型CCL极材的Td值做了测试对比，并根据测试情况向IPC提出以10℃/min升温速率较为合适的意见。     

The effects of interpulse interval on stochastic properties of electrical stimulation: models and measurements

It is known that some cochlear implant users have improved speech perception using higher rates of interleaved pulsatile stimulation. There are, however, significant limitations on their performance presumably due in part to temporal and spatial interactions. To address these limitations, we have examined refractory characteristics of the auditory nerve using experimental animal models and computational simulations. A stochastic model of the node of Ranvier modified for mammalian sodium channel kinetics has been developed to calculate the masked input-output (I/O) functions for different interpulse intervals (IPI) [26]. The model is based upon 1000 voltage-gated sodium channels and incorporates parameters such as nodal resistance and capacitance. The relative spread (RS) [35] calculated from the I/O functions was typically 0.03 for 17 different IPIs between 450 micros and 6 ms for cathodal stimuli. For IPI = 830 and 870 micros, the RS was ten times greater than those for other IPIs. Although it is not fully understood how the electrically evoked compound action potential (EAP) data are related to single fiber data, the RS of single fibers is a partial contributor [19]. We have measured the EAP using a monopolar intracochlear stimulating electrode and a recording electrode placed directly on the nerve and have observed changes in slope of EAP growth functions consistent with the theoretical RS values. These results have significant implications for speech coding in a cochlear implant since they suggest an increased membrane noise for pulse trains of specific rates.     

The impact of intrinsic series resistance on MOSFET scaling

The intrinsic parasitic series resistance associated with the practical structure of a MOSFET is examined. The components considered include contact resistance, diffusion sheet resistance, spreading (injection) resistance, and accumulation layer resistance. The impact of the total resistance on MOSFET scaling is assessed, down to a channel length of 0.15 µm. The results show that, contrary to what has been claimed before, the transconductance and current of a MOSFET continue to increase as the channel length is miniaturized, although the degradation percentage-wise compared to an ideal device without series resistance continues to increase. Based on the degraded I-V characteristics and their effects on an inverter, it is shown here that for NMOS or PMOS digital circuits, the maximum degradation in speed due to series resistance is 20-35 percent compared to ideal scaling for the shortest channel considered. For CMOS circuits, the maximum degradation is reduced to 7-15 percent. In absolute terms, a loss of speed in either case due to miniaturization of channel length is not expected even down to 0.15 µm.     

The significance of finite buffer edge effects in histogram measurements of queues

The empirically oberved fractal or self-similar nature of packet traffic implies heavy tailed queue processes for such traffic. However, based on our simulation analysis using real network data as well as standard models, we have found that the actual losses sustained are remarkably lower than those suggested by the heavy tail distribution. This can be explained by an effect observed in the tail of the histogram of a finite buffer queue process, which we call tail-raising, which contains information pertinent to performance estimation. This effect is also responsible for a significant reduction in packet losses for finite buffer systems, than would be otherwise predicted by the buffer overflow probability for heavy-tailed queues. We define a new parameter X _B on the histogram of a queue process for a finite buffer system, to calculate the tail of the queue process based on the information available in the histogram on the finite buffer. We propose an estimator that approximates X _B , namely, X _min, which is measurable because of the tail-raising effect and has a robust measurement method. The proposed estimator shows promise as a good predictor for performance metrics of queueing systems. We propose an innovative packet loss ratio estimation technique which uses histogram measurements combined with a virtual buffer scheme to find and extrapolate the objective packet loss rate using a binning strategy for histogram measurement, namely, Symmetric Logarithmic Binning (SLB).     

Analysis of surface charging effects in passivated AlGaN-GaN FETs using a MOS test electrode

Passivated AlGaN-GaN high electron mobility transistor (HEMT) structures are modified by adding a MOS test gate placed between gate and drain to identify surface charge phenomena by stress experiments. A new method is described to identify the vertical position of the charge centroid of charge injected from the gate. In the case investigated, this is within the passivation layer.     

Alpha-particle-induced charge collection measurements and the effectiveness of a novel p-well protection barrier on VLSI memories

This paper presents experimental results on analog charge collection measurements of alpha-particle-induced carriers in memory arrays. Measurements with high-intensity foils and variable-angle collimated sources on various memory arrays with different reflecting structures are reported. A novel p-well reflecting barrier is shown to reduce charge collection by a factor of 2 and soft error rate (SER) by about two orders of magnitude. Experimental analysis of the p-well with respect to its doping concentration, depth, bias voltage, and its interaction with p^-epi on p⁺substrate are presented. The effectiveness of the p-well barrier is demonstrated on a 64k DRAM of 154 mils with extremely low SER ≤ 0.001 percent/1 kh at 1-µs cycle time.