共查询到19条相似文献,搜索用时 46 毫秒
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SIMOX薄膜材料的红外光谱特性和薄膜厚度的非破坏性测量方法 总被引:1,自引:0,他引:1
报道了 SOI材料薄膜厚度的非破坏性快速测量方法 ,详细地研究了 SIMOX材料的红外吸收光谱特性 ,求出了特征峰对应的吸收系数 .提出利用红外吸收光谱测量 SIMOX绝缘埋层厚度的非破坏性方法 ,并根据离子注入原理计算出表面硅层的厚度 .SIMOX薄膜的表层硅和绝缘埋层的厚度是 SOI电路设计时最重要的两个参数 ,提供的非破坏性测量方法 ,测量误差小于5% .在 SIMOX材料开发利用、批量生产中 ,用此方法可及时方便地检测 SIMOX薄膜的表层硅和绝缘埋层的厚度 ,随时调整注入能量和剂量 相似文献
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在结合低剂量注氧隔离(SIMOX)技术和键合技术的基础上,研究了制备薄膜(薄顶层硅膜)厚埋层SOI材料的新技术--注氧键合技术.采用该新技术成功制备出薄膜厚埋层SOI材料,顶层硅厚度130nm,埋氧层厚度lμm,顶层硅厚度均匀性±2%.并分别采用原子力显微镜(AFM)和剖面透射电镜(XTEM)对其表面形貌和结构进行了表征.研究结果表明,SIMOX材料顶层硅通过键合技术转移后仍能够保持其厚度均匀性,且埋氧层和顶层硅之间具有原子级陡峭的分界面,因此注氧键合技术将会是一项有广阔应用前景的SOI制备技术. 相似文献
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在结合低剂量注氧隔离(SIMOX)技术和键合技术的基础上,研究了制备薄膜(薄顶层硅膜)厚埋层SOI材料的新技术--注氧键合技术.采用该新技术成功制备出薄膜厚埋层SOI材料,顶层硅厚度130nm,埋氧层厚度lμm,顶层硅厚度均匀性±2%.并分别采用原子力显微镜(AFM)和剖面透射电镜(XTEM)对其表面形貌和结构进行了表征.研究结果表明,SIMOX材料顶层硅通过键合技术转移后仍能够保持其厚度均匀性,且埋氧层和顶层硅之间具有原子级陡峭的分界面,因此注氧键合技术将会是一项有广阔应用前景的SOI制备技术. 相似文献
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氧离子注入硅SOI结构的椭偏谱研究 总被引:1,自引:0,他引:1
本文利用椭偏光谱法测量了能量为200keV、剂量为2×10~(18)cm~(-2)的~(16)O~+注入Si以及退火样品.应用多层介质膜模型和有效介质近似,分析了这些样品的SIMOX结构的各层厚度以及各层中的主要组份.提出了从椭偏谱粗略估算表层Si及埋层SiO_2厚度的简单方法.研究结果表明,这种条件下的O~+注入Si可以形成SIMOX结构,经高温退火后,表层Si是较完整的单晶层,埋层SiO_2基本没有Si聚积物.椭偏谱的结果与背散射、扩展电阻测量和红外吸收光谱等结果作了比较. 相似文献
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LIUBao-lin 《半导体光子学与技术》2002,8(1):9-13
Low-pressure MOCVD has been used to investigate the properties of low-temperature buffer layer depodition conditions and their influence on the properties of high-temperature GaN epilayers grown subsequently.It is found that the surface morphology of the as-grown buffer layer after thermal annealing at 1030℃and 1050℃ depends strongly on the thickness of the buffer layer.In particular when a thick buffer layer is used, large trapezoidal nuclei are formed after annealing. 相似文献
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The main feature of an ISDN user-network interface is the support of a wide range of service capabilities, including voice and nonvoice applications in the same network by offering end-to-end digital connectivity to a user. To handle the wide range of applications, a number of new features were developed and incorporated in the ISDN user-network interface layers 2 and 3 Recommendations. This paper reviews the current status of the ISDN user-network interface layers 2 and 3 Recommendations, with a special emphasis on new features developed and incorporated in these Recommendations. 相似文献
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《Geoscience and Remote Sensing, IEEE Transactions on》1982,20(1):72-76
Radar wave scattering on natural surfaces by randomly distributed irregularities of the absorption and phase properties superimposed on an average medium is studied. Two simple models are regarded replacing the real medium by a plane one with continuous distribution of phase and absorption and one with discrete absorbing celis. The scattered radiation contains a coherent (specular) part which is dependent on the antenna size to wavelength ratio and a random (diffuse) part. The angular width of the diffuse component is given by the ratio of mean dimension of the irregularities and the wavelength. The computed scattering patterns are compared with measurements. The resulting absorption of the surface layer determines the albedo and thus the emissivity. Reasonable assumptions yield backscatter and emission values fitting favorably to typical observations. The importance of the random absorption for the diffuse scattering and emission processes becomes evident. 相似文献
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本文分析一维理想匹配层的吸收性能,考虑到有限差分近似的影响,给出了它的理论反射系数。为了克服理想匹配层的差分误差,减少计算开销,提出数值匹配条件。改进的理想回配层被分成解析匹配区和数值匹配区,解析匹配区满足传统的解析匹配条件,数值匹配区满足数值匹配条件。分别给出理论分析结果和数值模拟结果,两者一致;与传统理想匹配层相比,改进的理想匹配层的吸收性能得到大幅度提高。 相似文献
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The focus of this contribution is on the scattering of small metal helices in layered arrangements that are located in free space or backed with a perfect electric conductor. Thereby, the -parameters obtained by means of a scattering approach based on the dipole-polarizabilities of the helices serve as a reference for the studies. The method accounts for the discrete particle positions. However, for practical reasons some averaging is involved. An analysis of fabricated inclusions appears to be essential for a comparison of the utilized method with measurements of material samples. Good agreement is confirmed by varying the thickness of the layer as well as the density of the inclusions. Further, the applicability of the Clausius-Mossotti mixing rule to the presented setups is critically assessed by comparison. In principle, it turns out that the scattering derived via classical effective material parameters differs from the one of the actual layers. Nevertheless, mixing rules could still be a method of choice if mutual coupling were not as strong as in the cases considered here. 相似文献
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Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers
Osinnykh I. V. Malin T. V. Kozhukhov A. S. Ber B. Ya. Kazancev D. Yu. Zhuravlev K. S. 《Semiconductors》2022,56(6):352-359
Semiconductors - The structural properties and crystal quality of AlxGa1 ? xN/AlN/Al2O3 heterostructures grown by ammonia-assisted molecular-beam epitaxy with a high silicon... 相似文献
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KANGLing LIUBao-lin CAIJia-fa 《半导体光子学与技术》2004,10(4):248-251
The optical properties of Silicon—doped InGaN and GaN grown on sapphire by MOCVD have been investigated by photoluminescence (PL) method. At room temperature, the band—gap peak of InGaN is 437.0 nm and its full width of half—maximum (FWHM) is about 14.3 nm. The band—gap peak and FWHM for GaN are 364.4 nm and 9.5 nm, respectively. By changing the temperature from 20 K to 293 K, it is found that the PL intensity of samples decreases but the FWHM broadens with the increasing of the temperature.GaN sample shows red—shift, InGaN sample shows red—blue—red—shift. The temperature dependence of peak energy shift is studied and explained. 相似文献
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掺硅InGaN和掺硅GaN的光学性质的研究 总被引:5,自引:3,他引:2
采用光致发光方法研究了采用金属有机化学气相沉积(MOCVD)在蓝宝石衬底上生长的掺硅InGaN和掺硅CaN材料的光学性质。在室温下.InGaN材料带边峰位置为437.0nm,半高宽为14.3nm;GaN材料带边峰位置为363.4nm.半高宽为9.5nm。进行变温测量发现.随温度的升高.两种材料的发光强度降低,半高宽增大;GaN材料的带边峰值能量位置出现红移现象.与Varshini公式符合较好;InGaN材料的带边峰值能量位置则出现红移-蓝移-红移现象.这与InGaN材料的局域态、热效应以及由于电子-空穴对的形成而造成的无序程度增加有关.对大于140K的峰值能量位置的红移用Varshini公式拟合.符合较好。 相似文献