GaAs同质外延生长过程的RHEED分析

采用激光分子束外延方法(L-MBE),在GaAs(001)衬底上同质外延GaAs薄膜。利用反射式高能电子衍射(RHEED)研究了材料沉积过程中的各级条纹及其强度的变化,进而得出GaAs薄膜外延生长的适宜激光能量和沉积温度分别为500 mJ和570℃。RHEED强度随时间的变化曲线表明,GaAs为良好的层状外延生长模式,并随着沉积时间延长,层状生长模式逐渐向岛状模式转变。实验研究还表明层状生长的GaAs薄膜经表面弛豫后,可以得到更好的平整表面,并出现GaAs(001)-(2×4)的表面重构。原位X射线光电子能谱仪(XPS)研究表明沿(001)面外延的GaAs薄膜表面Ga∶As化学计量比约为52∶48,出现Ga的聚集。     

Using neural networks to construct models of the molecular beamepitaxy process

This paper presents the systematic characterization of the molecular beam epitaxy (MBE) process to quantitatively model the effects of process conditions on film qualities. A five-layer, undoped AlGaAs and InGaAs single quantum well structure grown on a GaAs substrate is designed and fabricated. Six input factors (time and temperature for oxide removal, substrate temperatures for AlGaAs and InGaAs layer growth, beam equivalent pressure of the As source and quantum well interrupt time) are examined by means of a fractional factorial experiment. Defect density, X-ray diffraction, and photoluminescence are characterized by a static response model developed by training back-propagation neural networks. In addition, two novel approaches for characterized reflection high-energy electron diffraction (RHEED) signals used in the real-time monitoring of MBE are developed. In the first technique, principal component analysis is used to reduce the dimensionality of the RHEED data set, and the reduced RHEED data set is used to train neural nets to model the process responses. A second technique uses neural nets to model RHEED intensity signals as time series, and matches specific RHEED patterns to ambient process conditions. In each case, the neural process models exhibit good agreement with experimental results     

应力对薄膜偏振分束镜性能的影响及改进工艺

为了研究应力对薄膜偏振分束镜性能的影响和减少应力的方法,通过在镀制分光膜之前预镀Al2O3过渡层,镀制过程中提高真空度、升高基底温度、减慢薄膜沉积速率,以及封装过程中采用光学光敏胶紫外光照射快速凝固法来减少薄膜应力。利用CCD采集了工艺改进前后薄膜偏振分束镜反射光和透射光的光斑图像,利用消光比测试系统测量了工艺改进前后薄膜偏振分束镜反射光和透射光的消光比。结果表明,改进工艺后反射光和透射光的光斑能量更加集中,散斑现象变小;反射光和透射光的消光比特性明显提高。由此可见,通过改进镀制工艺和封装工艺可以使薄膜偏振分束镜的指标达到使用要求。     

RHEED振荡精确测量AlGaAs生长速率研究

采用分子束外延技术,在GaAs衬底上生长GaAs,AlAs和AlGaAs时,实现RHEED图像和RHEED强度振荡的实时监测已被证明是一种有效工具。通过RHEED可讨论GaAs表面结构和生长机制,并可以估算衬底温度,更重要的是能计算出材料的生长速率。RHEED强度振荡周期决定生长速率,每一个周期对应一个单层。实验测量GaAs的生长周期为0.82s,每秒沉积1.22单分子层,AlAs的生长周期为2.35s,每秒沉积0.43单分子层。     

[(BaTiO3)m/(SrTiO3)m]n超晶格生长的RHEED实时研究

利用反射高能电子衍射(RHEED)，研究了在SrTiO3(100)基片上采用激光分子束外延法生长的[(BaTiO3)m／(SrTiO3)m]n超晶格薄膜的生长特性。观察到清晰明亮的反射高能电子衍射花样及富有周期性的RHEED振荡曲线，制备的超晶格呈现良好的结晶层状外延生长，薄膜表面及界面的平整度很好。     

用RHEED方法分析半导体薄膜特性

在讨论ＲＨＥＥＤ原理的基础上，介绍了组建的ＲＨＥＥＤ和其附属的真空系统，并用此装置得到了Ｓｉ薄膜的ＲＨＥＥＤ衍射花样。本文还对实验条件和实验结果进行了简单的分析和介绍。     

RHEED优化MBE生长中波MCT薄膜工艺

在分子束外延(MBE)中波HgCdTe薄膜过程中,利用反射式高能电子衍射(RHEED)对衬底表面脱氧和生长过程中生长参数对材料特性的影响进行研究.通过观察RHEED图样的变化,确定了衬底的脱氧状况,获得了生长中衬底温度等生长参数变化引起材料结晶的变化规律,为MBE生长HgCdTe薄膜实验的可控生长提供有效帮助;生长结束后,通过SEM、Hall等手段对HgCdTe的表面缺陷、电学参数等性能进行了初步研究,证明实验说成长的材料基本满足器件制备的要求.     

Fabrication of Self-Organized Optical Waveguides in Photo-induced Refractive Index Variation Sol–Gel Materials With High-Index Contrast

Using photo-induced refractive index variation sol-gel materials, we fabricated a self-organized lightwave network (SOLNET), which is a concept of optical waveguides self-organized in photosensitive materials, whose refractive index increases by write beam exposure. The refractive index of the sol-gel materials increases from 1.65 to 1.85 when exposed to UV light/blue light and baking. When write beams with a wavelength of 405 nm are introduced into the sol-gel thin film under baking at 200degC, self-focusing is induced and a SOLNET is formed. In this study, we evaluated the light confinement effect and coupling efficiencies of the fabricated SOLNET. The half-width of the output beam spot decreases from 23.8 to 11.8 mum, and the coupling efficiencies increase as write beam intensity decreases from 1.0 to 0.1 mW. These results show that SOLNET widths become narrow when write beam intensity is reduced; thus, SOLNETs formed with a low write beam intensity produce a strong light confinement effect. Furthermore, during their formation, SOLNETs were found to be drawn toward reflective portions of the sol-gel thin film, such as defects or silver paste droplets, indicating that a reflective SOLNET is formed. We have shown that photo-induced refractive index variation sol-gel materials are promising materials for SOLNET fabrication. To create actual connections between nanoscale optical circuits, further work is necessary to optimize the baking temperature and write beam intensity required for nanoscale SOLNET formation.     

基于人工神经网络激光烧蚀制备PDPhSM基纳米复合薄膜聚合效率的预测

为有效缩短脉冲激光烧蚀制备有机硅聚合物聚二苯基硅亚甲基硅烷(PDPhSM)基纳米复合薄膜工艺中繁琐的实验过程,分别采用多层前馈(BP)神经网络和径向基函数(RBF)神经网络对PDPhSM基纳米复合薄膜的制备工艺与聚合效率之间的关系进行建模,并将其运用到聚合效率的预测中去,讨论了激光能量密度、环境压强、靶衬距离、沉积时间和聚合效率之间的关系。克服了以往单因素实验法不能正确反映制备工艺和聚合效率之间复杂的非线性关系的弱点。预测和验证结果均表明实验值和网络预测值之间相对误差都在10%以内,但径向基函数神经网络较多层前馈神经网络能够更精确、更可靠地逼近它们之间的非线性关系。该方法为有效、快捷、经济地开发研制PDPhSM基纳米复合薄膜提供了新的思路和有效手段。     

The effect of the discharge aging process on the surface state of MgO film in AC PDPs

This paper reports on the change in the surface condition of the MgO thin film in an ac plasma display panel during the discharge aging process. The superficial layer on the MgO thin film was created during the discharge aging process, which was related to the minimum sustain voltage and the light intensity emitted from the Neon+Xenon gas mixture discharge. The superficial layer on the MgO thin film was observed using a transmission electron microscope. The X-ray diffractometer pattern of the MgO thin film after the discharge aging process was different from the pattern at the beginning of the discharge aging process.     

聚焦离子束辅助淀积的淀积速率模型

在 U.G.Meyer离子与表面吸附气体相互作用模型的基础上 ,提出了聚焦离子束辅助淀积的淀积速率模型 .该模型包含了淀积过程中淀积作用和溅射作用的共同影响 ,指出在一定的离子束电流和反应气体流量下 ,影响淀积速率的主要因素是离子束的照射时间和扫描周期 .模型的计算结果与实验结果比较取得了较好的吻合 ,说明该模型比较精确地反映了聚焦离子束辅助淀积的物理过程 .     

Use of influence diagrams and neural networks in modelingsemiconductor manufacturing processes

An adaptive learning architecture for modeling manufacturing processes involving several control variables is described. The use of this architecture to process modeling and recipe synthesis for deposition rate, stress, and film thickness in low-pressure chemical vapor deposition (LPCVD) of undoped polysilicon is discussed. In this architecture the model for a process is generated by combining the qualitative knowledge of human experts, captured in the form of influence diagrams, and the learning abilities of neural networks for extracting the quantitative knowledge that relates the parameters of a process. To evaluate the merits of this methodology, the accuracy of these new models is compared to that of more conventional models generated by the use of first principles and/or statistical regression analysis. The models generated by the integration of influence diagrams and neural networks are shown to have half the error or less, even though given only half as much information in creating the models. Furthermore, it is shown that, by employing the generalization ability of neural networks in the synthesis algorithm, new recipes can be produced for the process. Two such recipes are generated for the LPCVD process. One is a zero-stress polysilicon film recipe; the second is a uniform deposition rate recipe which is based on the use of a nonuniform temperature distribution during deposition     

Mechanical behavior of mismatch strain-driven microcantilever

A model of mechanical behavior of microcantilever due to mismatch strain during deposition of MEMS structures is derived. First, a microcantilever, modeled as an Euler-Bernoulli beam, is subjected to deposition of another material and a linear ordinary differential equation which considers the through-thickness variation of the mismatch strain is derived. Second, the deposition analysis is experimentally realized by electroplating of nickel onto an atomic force microscope (AFM) cantilever beam. Young's modulus of the electroplated nickel film is determined by using Sader's method and elementary beam theory. The deflection of the AFM cantilever is in-situ measured as a function of the electroplated thin film thickness through the optical method of AFM and the mismatch strain with the through-thickness variation is determined from the experiment results.     

聚焦离子束诱发金属有机化学气相淀积碳-铂薄膜

通过一系列实验,对聚焦离子束诱发MOCVD的成膜机理进行了研究,给出了淀积速率同离子束流等参数之间关系的理论模型.发现随着离子束流的增大,薄膜淀积速率增大,但并非完全线性增加,薄膜中的C/Pt比例也随之变化,薄膜电阻率则随之降低,最后趋向恒定.研究结果对实际工作中的工艺参数选取和薄膜电学性质的改进都有一定价值     

Some aspects of the RHEED behavior of low-temperature GaAs growth

The reflection high-energy electron diffraction (RHEED) behavior manifested during MBE growth on a GaAs(001) surface under low-temperature (LT) growth conditions is examined in this study. RHEED and its intensity oscillations during LT GaAs growth exhibit some particular behavior. The intensity, phase, and decay of the oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature, etc. Here, the intensity dependence of RHEED behavior on the BEP ratio, substrate temperature, and excess of As content in the layer are examined. The change in the decay constant of the RHEED oscillations is also discussed.     

适用于沉积工艺的真空技术

半导体生产中的薄膜沉积工艺通常对真空泵的要求很严格。在该工艺中高故障率和停机现象较为普遍。iH真空泵是特别为应付恶劣的薄膜工艺环境所设计。阐述了iH系列干泵在LPCVD氮化硅工艺应用中的成功表现。     

以低价态钛氧化物制备TiO2薄膜研究

试验以Ti2O3,Ti3O5和TiO2作为初始膜料,在ZZS700-6/G型真空镀膜机上采用O2-离子束辅助蒸发制备氧化钛薄膜.用XRD检测方法确定各种膜料和薄膜的相成分,并全面地分析了各种膜料的蒸发特性和薄膜;用分光光度计测量薄膜的透射率,并分析薄膜的光学性能.试验表明,在采用Ti2O3,Ti3O5和TiO2作为蒸发制备氧化钛薄膜时,钛的氧化物中存在Ti3O5固态同一蒸发相;各种膜料在蒸发时,发生分解,熔池中的物质成分逐渐转变成同一蒸发相成分,最终完全转变成同一蒸发相.     

Low temperature MBE of GaAs: A theoretical investigation of RHEED Oscillations

Surface dynamics dominate the temporal variation of reflection high energy electron diffraction (RHEED) intensity in the low temperature molecular beam epitaxy (MBE) of (100) gallium arsenide (GaAs). A rate equation model is proposed which includes the presence and dynamics of a physisorbed arsenic (PA) layer riding the growth surface. Using the results of the temporal evolution of the surface, the RHEED intensity is computed based on kinematical theory of electron diffraction with an As-As interplanar distance of 2.48 Å for the physisorbed As layer and a (100) Ga-As crystalline interplanar distance of 1.41 Å. The model results show ROs at low and high temperatures but not in the intermediate range of 300–450°C which is in good agreement with experiments. At low temperatures, the surface is covered by the PA layer whose vertical distribution across the layers depends upon that of the underlying crystalline surface. Thus a temporal variation of the step density of the crystalline GaAs surface results in step density variation of the PA layer which, in turn, yields ROs. Since the height of the PA layer is uniformly 2.48Å in this case, the RHEED beam sees a step height equal to the GaAs interplanar distance of 1.41Å, and the specular intensity of the RHEED beam will respond to the temporal variations in the underlying GaAs surface, yielding ROs if the growth is layer-by-layer. At high temperatures the crystalline GaAs is exposed to the RHEED beam due to evaporation of PA layer and the ROs appear due to periodic step density oscillations with a step height of 1.41Å which is the Ga-As crystalline interplanar distance. At intermediate temperatures, the partial coverage of the surface by the PA layer and crystalline GaAs, coupled with very different interplanar distances in these layers, results in a complete destructive interference of the RHEED intensity. The RO dependence on the As BEP is also presented and discussed.     

离子束溅射宽带吸收薄膜设计与制备技术研究

Si薄膜在可见光和近红外波段具有一定的吸收特性,可用于宽带吸收薄膜的制备。采用离子束溅射技术,在熔融石英基底上制备了不同沉积工艺参数的Si薄膜,基于透、反射光谱和椭偏光谱的全光谱数值拟合法,计算了Si薄膜的光学常数,并研究了氧气、氮气流量对其光学特性的影响。选择Si和Ta2O5作为高折射率材料、SiO2作为低折射率,设计了吸收率为2%和10%的宽带（1 000~1 400 nm）吸收薄膜。采用离子束溅射沉积技术,在熔融石英基底上制备了宽带吸收薄膜,对于A=2%的宽带吸收光谱,在1 064、1 200、1 319 nm的吸收率分别为2.12%、2.15%和2.22%;对于A=10%的宽带吸收光谱,在1 064、1 200、1 319 nm的吸收率分别为9.71%、8.35%和9.07%。研究结果对于吸收测量仪、光谱测试仪等仪器的定标具有重要的作用。     

一种基于ART2神经网络的算法改进

针对传统的ART2神经网络中对于主观设置的警戒参数以及识别分类过程中产生模式漂移的问题,提出基于改进算法的ART2神经网络模型,用于解决分析模式识别问题。通过自组织,加权,迭代等过程推导合理的警戒参数用于聚类运算,通过对ART2神经网络的权值训练方面进行修正,减缓学习速率,降低模式漂移速度,近一步对聚类对象进行合理分类。实验结果证明,该方法是可行的和有效的。