氧化铟锡薄膜制备工艺参数的正交优化设计

利用水热的方法制备了ITO透明导电薄膜,通过正交试验设计研究镀膜工艺因素对薄膜光电特性的影响规律。试验结果表明:影响薄膜光电性能的主要因素是前驱物浓度,其次是氨水浓度和保温温度,保温时间对薄膜光电性能的影响较小。在采用前驱物浓度为0.5mol/L、氨水浓度为3mol/L、保温温度为160℃、保温时间8h的实验条件下,沉积薄膜的性能较好。     

不同温度硫化生长ZnS薄膜的性能

采用磁控溅射方法在玻璃衬底上室温下沉积了Zn薄膜,接着将薄膜在硫蒸气和氩气氛中于200℃预热1 h,然后升温至250~500℃退火1 h。以XRD、SEM、EDS和紫外可见分光光度计对薄膜进行表征,并结合热力学计算结果研究了Zn薄膜硫化生长机理。Zn转变为ZnS的过程包括硫化反应以及S原子和Zn原子的扩散。研究还表明:第一步的200℃预热可在Zn薄膜表面形成ZnS,随后第二步退火的硫化温度对硫化薄膜光透过率、S/Zn摩尔比和结晶性都有明显影响;在大于或等于300℃的硫化温度下制备的ZnS薄膜在400~1100 nm范围光透过率高达约80%,带隙为3.54~3.60 eV,晶体结构为六方。     

硫化锌薄膜的原子层沉积生长及表征

为满足硫化锌(ZnS)薄膜在光学薄膜领域进一步应用的要求,基于原子层沉积(Atomic Layer Deposition, ALD)技术在130℃温度下以二乙基锌(DEZ)和硫化氢(H2S)为反应源,在砷化镓(GaAs)衬底表面沉积了ZnS薄膜。用扫描电子显微镜(Scanning Electron Microscope, SEM)分析了样品的表面形貌和膜界面特性,用X射线衍射仪(X-ray Diffraction, XRD)分析了薄膜的结构特性,并通过X射线光电子能谱(X-ray Photoelectron Spectroscopy, XPS)分析了薄膜的化学成分。研究了厚度对薄膜结构和形貌的影响。结果表明,得到的ZnS薄膜为多晶结构,薄膜的厚度随循环数线性增加,速率为1.45 ?/cycle。对在75℃温度下烘烤48 h后的薄膜进行了XPS分析,得出的Zn/S比为1.07:1,表明烘烤除去了薄膜中残存的H2S。以较短生长时间得到的较薄的薄膜具有更好的表面平整度和更致密的结构。     

浓度对Sol-Gel法制备BST薄膜结晶及介电性能的影响

以醋酸锶、醋酸钡和钛酸四丁酯为前驱体原料,配制了不同浓度(0.05mol/L、0.1mol/L、0.3mol/L、0.4mol/L、0.5mol/L)的Ba0.65Sr0.35TiO3溶胶,采用溶胶-凝胶(Sol-Gel)和旋涂工艺,成功制备了BST薄膜.采用XRD、SEM和阻抗分析仪研究分析了前驱液浓度对BST薄膜的结晶、微观形貌和性能的影响.结果表明,在相同热处理温度下,随着前驱液浓度增加,薄膜的结晶程度、晶粒生长情况和介电常数依次提高,介电损耗降低.浓度为0.5mol/l的溶胶形成的薄膜的结晶程度较好;晶粒发育完善,晶粒与晶粒之间比较紧密,表面光滑致密无裂纹,颗粒尺寸约为60nm～80nm;且其介电性能最佳.     

ZnO薄膜的结构与光学性能研究

采用sol-gel法在石英衬底上制备了ZnO薄膜,通过改变溶胶浓度、涂敷层数及退火温度,研究了ZnO薄膜的形貌、结构性能及光学性能。结果表明,薄膜具有六方纤锌矿结构,表面均匀致密,晶粒大小在25～35nm之间,Zn含量为0.8mol/L的溶胶经旋涂并在500℃下退火1h后可获得最高的可见光透射率,平均透射率约为94%。获得的ZnO薄膜的光学带隙在3.27～3.29eV之间。     

ZnS∶Er纳米晶的水热合成及其性能研究

该文以硫代乙酰胺为硫源,采用水热法合成了ZnS∶Er纳米晶。并用X线衍射(XRD)、透射电子显微镜(TEM)、X线光电子能谱仪(XPS)、荧光光谱仪对其物相、形貌、组成及光学性能进行了表征。结果表明,ZnS∶Er纳米晶为立方闪锌矿结构,粒径约为5nm。由XPS图谱可知,ZnS∶Er纳米晶中存在Zn、S、C、O、Er等元素。ZnS∶Er纳米晶荧光光谱中出现了2个主要发射峰,分别位于469nm和583nm处。两发射峰的发光强度随着pH的升高而增强且发光峰的位置存在微弱的蓝移,pH=12时,两发射峰的荧光强度最强;随着Er3+掺杂量的增加,469nm处发射峰的强度先增强后减弱,583nm处发射峰的强度随之减弱。     

联氨对化学水浴沉积ZnS薄膜的影响

在A(ZnSO4、SC(NH2)2、NH4OH)和含有联氨的B(ZnSO4、SC(NH2)2、NH4OH、(NH2)2)两种水溶液中采用化学水浴法沉积ZnS薄膜,研究了联氨对薄膜沉积过程和薄膜性质的影响.结果表明,加入少量联氨以后,薄膜沉积速度明显增加.两种溶液沉积的ZnS都为立方相结构,且含有联氨的B溶液沉积的ZnS薄膜表面附着颗粒较少.在含有联氨的B溶液中沉积的ZnS薄膜结晶度和短波区的透过率均高于A溶液沉积的ZnS薄膜.将两种溶液沉积的ZnS薄膜作为电池缓冲层制备铜铟镓硒(CIGS)薄膜太阳电池,加入联氨沉积的ZnS制备的CIGS电池转换效率达到7.77%,比不加联氨沉积的ZnS制备的CIGS电池转换效率提高了1.3%.     

ZnS∶Mn纳米晶的制备及磁光性能研究

采用水热法制备了Mn掺杂的ZnS纳米晶,通过X线衍射(XRD)谱、扫描电子显微镜(SEM)、磁性曲线、光致发光谱对其微结构、表面形貌、磁学及光学性能进行了探究。结果表明,ZnS∶Mn纳米晶为球形闪锌矿结构,晶体颗粒大小均匀,平均粒径为20nm。在外加磁场的作用下,ZnS∶Mn纳米晶的磁化强度随着Mn掺杂浓度增加而增加。当掺杂x(Mn)=2%(摩尔分数)时,ZnS∶Mn纳米晶发射光谱的强度最强;当x(Mn)=10%时,离子间相互碰撞引发了浓度猝灭效应及高浓度Mn引入的大量缺陷,使光致发光谱的强度减小。     

射频磁控溅射法在柔性聚酰亚胺衬底上制备ZnS薄膜及其特性研究

为使Ⅱ-Ⅵ族化合物ZnS薄膜具有可弯曲性,选用柔性的聚酰亚胺作为衬底材料,用射频磁控溅射法沉积ZnS薄膜,对所制备薄膜的结晶结构、组分和光学特性进行分析.实验结果表明,所制备薄膜为结晶态的闪锌矿ZnS结构,择优取向为(111)晶面,晶粒尺寸为25.6 nm.薄膜组分接近化学计量比,并具有少量的S损失.薄膜在可见光区和近红外光区的平均透射率分别为82.0％和90.5％,透光特性良好.作为对比,在钠钙玻璃衬底上溅射的ZnS薄膜的结晶度高于聚酰亚胺衬底薄膜,但其透射率略低于柔性ZnS薄膜.实验结果表明了用磁控溅射法在柔性聚酰亚胺衬底上制备ZnS薄膜的可行性.     

铝掺杂氧化锌薄膜在玻璃衬底上的RF反应共溅射低温织构生长

以金属锌( Zn)和铝( Al)为靶材采用射频( RF)反应共溅射技术在低温( 2 0 0℃)玻璃衬底上沉积了铝掺杂氧化锌( Zn O∶Al)薄膜.运用扫描电子显微镜( SEM)、能量色散X射线谱( EDX)、表面轮廓仪(α- Step)、X射线衍射( XRD)和双光束紫外-可见光谱仪( U V- VIS)等分别对沉积样品的表面和断面的形貌结构、组成成分和光学特性进行了分析表征.研究了反应气体氧与氩流量比( O2 / Ar)和RF溅射功率对沉积样品的生长速率、结构特征和光电学性质的影响.结果表明,薄膜的成长速率强烈依赖于RF溅射功率,而薄膜的结构形貌和成分的化学配比则主要由反应气体流量比O2 / Ar     

Preparation and characterization of ZnS thin films prepared by chemical bath deposition

Zinc sulfide thin films were prepared by chemical bath deposition technique using zinc sulfate (ZnSO₄·7H₂O) and thiourea [SC(NH₂)₂] as sources of Zn²⁺ and S^2– ions, and ammonia (NH₃) and hydrazine hydrate (N₂H₄) as complexing agents. The structural, stoichiometric proportion, morphology and optical properties of the ZnS thin films were investigated as a function of thiourea and ammonia concentrations using X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and UV-visible spectrophotometry measurements. The deposition mechanism is discussed. The results reveal that the ZnS films exhibit poor crystallinity. The ammonia concentration had an obvious effect on the surface morphology, optical properties and deposition mechanism. The S/Zn atomic ratio and optical bandgap of the ZnS thin films first increased and then decreased with increasing ammonia or thiourea concentration.     

Effects of different precursors on Cu2ZnSnS4 thin film solar cells prepared by sputtering method

In this study, the impacts of different precursors on Cu₂ZnSnS₄ thin film solar cells were investigated. The two kinds of precursors of (Cu+Sn)/Zn and (Cu+Sn)/ZnS were deposited on Mo-coated soda lime glasses by magnetron sputtering. Cu₂ZnSnS₄ (CZTS) films based on different precursors were fabricated by soft annealing and following two-step sulfurization in sulphur vapour. The crystal structure, phase purity, surface morphology, composition and optical properties of CZTS films from different precursors were characterized by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscope (SEM), energy dispersive spectrometry (EDS) and UV–vis–NIR spectroscopy, respectively. As a result, the CZTS thin films with smooth surface and uniform compositional ratio distribution were obtained from the precursors of (Cu+Sn)/ZnS. The best conversion efficiency of the fabricated CZTS film solar cell based on (Cu+Sn)/ZnS precursors was 3.36%.     

Influence of Deposition Parameters on the Morphology, Structural, and Optical Properties of ZnSe Nanocrystalline Thin Films

Zinc selenide (ZnSe) nanocrystalline thin films were prepared by using chemical bath deposition at different ammonia concentrations and different deposition temperatures. The structural and optical properties of ZnSe nanocrystalline thin films were investigated as a function of the ammonia concentration in precursors or the deposition temperature using scanning electron microscopy, energy-dispersive spectrometry, x-ray diffraction measurements, and ultraviolet (UV)–visible spectrophotometry measurements. The results reveal that the ZnSe thin films are composed of a large number of uniform spherical particles. Each spherical particle contains several nanocrystals 5 nm to 7 nm in crystallite size. An increase in both the average diameter of the spherical particles and the crystallite size of the nanocrystals occurs with an increase in ammonia concentration and/or deposition temperature. The Se/Zn atom ratios in the ZnSe thin films increase and the optical band gaps, E _g, of the ZnSe thin films decrease with an increase in ammonia concentration or deposition temperature. The kinetics and reaction mechanism of the ZnSe nanocrystalline thin films during deposition are discussed.     

Zn沉积时间对低温硫化制备ZnS薄膜性能的影响

采用磁控溅射方法在不同时间下沉积了Zn薄膜,接着先后在200℃和400℃温度下的硫蒸气和氩气氛中进行了低温硫化退火,时间都为1 h,最后得到不同厚度的六方相ZnS薄膜。以XRD、SEM、EDS和紫外可见分光光度计对薄膜进行表征。研究表明:随着Zn沉积时间的增加,硫化制备的ZnS薄膜的晶粒尺寸、光透过率、带隙、S/Zn摩尔比都发生了明显变化,但变化趋势不同。并且,对其低温硫化生长ZnS薄膜的机理进行了讨论。此外,硫化前的抽真空处理可以明显改善ZnS薄膜的质量。所有低温硫化制备的ZnS薄膜在400~1100 nm范围光透过率约为70%,带隙值为3.49~3.57 eV。其中,3 min沉积的Zn在抽真空后低温硫化生长的ZnS薄膜质量最佳。     

Studies on morphology,electrical and optical characteristics of Al-doped ZnO thin films grown by atomic layer deposition

Al doped ZnO (AZO) films deposited on glass substrates through the atomic layer deposition (ALD)technique are investigated with various temperatures from 100 to 250 ℃ and different Zn ∶ Al cycle ratios from 20 ∶ 0 to 20 ∶ 3.Surface morphology,structure,optical and electrical properties of obtained AZO films are studied in detail.The Al composition of the AZO films is varied by controlling the ratio of Zn ∶ Al.We achieve an excellent AZO thin film with a resistivity of 2.14 × 10-3 Ω·cm and high optical transmittance deposited at 150 ℃ with 20 ∶ 2 Zn ∶ Al cycle ratio.This kind of AZO thin films exhibit great potential for optoelectronics device application.     

Effect of four different zinc salts and annealing treatment on growth,structural, mechanical and optical properties of nanocrystalline ZnS thin films by chemical bath deposition

ZnS thin films were deposited from four different zinc salts on glass substrates by chemical bath deposition method. Different anions of zinc salts affect the deposition mechanism and growth rate, which influence the properties of the films significantly. The ZnS thin film deposited from ZnSO₄ is smoother, thicker, more homogeneous and compact, nearly stoichiometric, comparing with the films deposited from Zn(CH₃COO)₂ and Zn(NO₃)₂, and ZnCl₂. The scratch test of bonding force between ZnS film and substrate shows that the ZnS film deposited from ZnSO₄ has the most excellent adhesion with the substrate. The presence of SO₄²⁻ promotes heterogeneous ZnS thin film growth via ions by ions deposition, and the films deposited from Zn(CH₃COO)₂ and Zn(NO₃)₂ are formed via clusters by clusters deposition. XRD and HRTEM results show that cubic ZnS films are obtained after single deposition, and the grain size of ZnS thin film deposited from ZnSO₄ for 2.5 h is 10 nm. The average transmission of all films is greater than 85% in the wavelength ranging from 600 to 1100 nm, and the transmission of films deposited from ZnSO₄ or Zn(NO₃)₂ for 1.5, 2 and 2.5 h is greater than 85% in the wavelength varying from 340 to 600 nm, which can enhance the blue response. The band gaps of all ZnS thin films are in the range of 3.88–3.99 eV. After annealing treatment, the mechanical and optical properties of the ZnS thin film deposited from ZnSO₄ are improved significantly.     

Role of Zinc Source in Chemical Bath Deposition of Zinc Sulfide Thin Films on Si3N4

Zinc sulfide (ZnS) thin films have been grown by chemical bath deposition (CBD) using different zinc sources on a silicon nitride (Si₃N₄) substrate in an alkaline solution. The zinc precursors used were zinc acetate, zinc nitrate, and zinc sulfate. The structural and optical characteristics of the ZnS thin films obtained were analyzed. The morphology of the surface showed that the films were compact and uniform, with some pinholes in the surface depending on the zinc source. The most homogeneous and compact surfaces were those obtained using zinc nitrate as the zinc source with a root-mean-square (RMS) value of 3 nm. The transmission spectra indicated average transmittance of 80% to 85% in the spectral range from 300 nm to 800 nm, and the optical bandgap calculated for the films was around 3.71 eV to 3.74 eV.     

ZnO纳米棒/薄膜结构的电沉积制备及性能

以阳离子表面活性剂——十六烷三甲基氯化铵(CTAC)作为添加剂,采用电沉积法在氧化铟锡玻璃基板上制备了ZnO薄膜。并研究了CTAC含量对阴极电流密度、结构、表面形貌、化学态和光学性能的影响。实验发现阴极电流密度和(002)择优取向随CTAC含量的增加而增加。电沉积氧化锌薄膜的表面形貌随CTAC含量的增加由小晶粒变为纳米棒,这表明CTAC在控制表面形貌方面有很重要的作用。X-射线光电子能谱表明Zn2p3/2,Zn2p1/2,O1s的峰位分别为1020.78eV、1046.88eV和530.8eV。CTAC对电沉积的影响可能是由于CTAC的吸附作用改变了不同晶面的表面能和生长动力学。此外,研究了ZnO薄膜的光学性能,结果表明当CTAC含量为3.0mmol/L时,薄膜具有较好的透光性和紫外发射性能。添加不同含量CTAC的ZnO薄膜禁带宽度介于3.27～3.52eV。     

Cu(In,Ga)Se2太阳电池缓冲层ZnS薄膜性质及应用

在含有ZnSO4,SC(NH2)2,NH4OH的水溶液中采用CBD法沉积ZnS薄膜,XRF和热处理前后的XRD测试表明,ZnS沉积薄膜为立方相结构,薄膜含有非晶态的Zn(OH)2.光学透射谱测试表明,制备的薄膜透过率(λ＞500nm)约为90%,薄膜的禁带宽度约为3.51eV.ZnS薄膜沉积时间对Cu(In,Ga)Se2太阳电池影响显著,当薄膜沉积时间在25～35min时,电池的综合性能最好.对比了不同缓冲层的电池性能,采用CBD-CdS为缓冲层的电池转换效率、填充因子、开路电压稍高于CBD-ZnS为缓冲层的无镉电池,但无镉电池的短路电流密度高于前者,两者转换效率相差2%左右.ZnS可以作为CIGS电池的缓冲层,替代CdS,实现电池的无镉化.