Design Consideration for Frequency-Stabilized MIC IMPATT Oscillators in the 26-GHz Band

A 26-GHz frequency-stalbilized MIC IMPATT oscillator using a dielectric resonator has been developed. In designing such an oscillator in the high-frequency range, many parameters affecting frequency stability should be considered. This paper discusses oscillation frequency variations caused by deviations in the resonant frequency of dielectric resonators, in diode reactance, and in the electrical length between the diode and resonator, all of which are due to temperature variation. Design criteria for a highly frequency-stabilized oscillator are also presented. With these techniques, we have obtained an MIC IMPATT oscillator with frequency stability of less than +-5.0x10/sup -5/, output power deviation of less thau +-2.0 dB, and output power of more than 23 dBm over the temperature range of 0°C to 50°C.     

35 GHz dielectric resonator stabilised gunn oscillator

A 35 GHz dielectric resonator oscillator(DRO) using GaAs Gunn diode in microstrip configuration has been designed and developed. The oscillator, with an integral waveguide-to-microstrip transition, delivered an output greater than 18 dBm. Phase noise of the oscillator is found to be better than ?80 dBc/Hz at 100 KHz away from the carrier. A frequency drift of about ±25 MHz has been observed over the temperature range from ?10 °C to 50 °C.     

S波段低相噪同轴介质压控振荡器设计

运用串联反馈振荡器理论设计了一个工作于S波段的低相噪同轴介质压控振荡器。首先分析了同轴介质谐振器的理论以及串联反馈振荡器的工作原理,然后在高频电磁仿真软件HFSS和ADS中进行仿真和设计。为了实现电调谐,将变容管合理地加入振荡器,最终设计完成了一个S波段的低相噪同轴介质压控振荡器。通过对实物成品的测量和调试表明,此压控振荡器达到了预定的技术指标,各项性能良好。测试结果:工作频率为2.075~2.250 GHz,调谐范围为1.75 GHz,输出功率≥11 dBm,谐波抑制度≥23 dBc,相位噪声优于-133 dBc/Hz@100kHz。     

A Highly Stabilized GaAs FET Oscillator Using a Dielectric Resonator Feedback Circuit in 9-14 GHz

A new type of highly stabilized GaAs FET oscillator using a dielectric resonator and a stabilization resistor in the feedback circuit has been developed. The oscillator fabricated with a microwave integrated circuit has a high external quality factor Q/sub ex/ for more than1000 with no hysteresis phenomena. The microwave characteristics of the GaAs FET oscillator has revealed 1) high efficiency of 20 percent with 70-mW output power at 11.85 GHz, 2) a wide tuning range more than1000 MHz, 3) a wide oscillation frequency from 9 to 14 GHz with same MIC pattern by using five dielectric resonators of different sizes, 4) a high-frequency stability as low as /spl plusmn/ 150kHz in the tempature range from -20 to + 60/spl deg/ C, and 5) low FM noise of 0.07 Hz/ /spl radic/Hz at off-carrier frequency of 100kHz.     

4千兆赫介质谐振器振荡器

本文叙述了介质谐振器作为加载带阻滤波器稳频的基本原理,介绍了4GHz介质谐振器振荡器.该振荡器在-40℃到+55℃范围内,频率稳定度在2ppm/℃左右,在+55℃下连续工作8小时,频率漂移一般在50kHz以内,振荡器的输出功率在10mW左右.该振荡器曾在国际卫星通迅公司5号星电视传输试验中作接收系统的本振源,使用良好.     

GaAs Monolithic MIC's for Direct Broadcast Satellite Receivers

A 12-GHz low-noise amplifier (LNA), a 1-GHz IF amplifier (IFA), and an 11-GHz dielectric resonator oscillator (DRO) have been developed for DBS home receiver applications by using GaAs monolithic microwave integrated circuit (MMIC) technology. Each MMIC chip contains FET's as active elements and self-biasing source resistors and bypass capacitors for a single power supply operation. It also contairns dc-block and RF-bypass capacitors. The three-stage LNA exhibits a 3.4-dB noise figure and a 19.5-dB gain over 11.7-12.2 GHz. The negative-feedback-type three-stage IFA shows a 3.9-dB noise figure and a 23-dB gain over 0.5-1.5 GHz. The DRO gives 10.mW output power at 10.67 GHz, with a frequency stability of 1.5 MHz over a temperature range from -40-80°C. A direct broadcast satellite (DBS) receiver incorporating these MMIC's exhibits an overafl noise figure of /spl les/ 4.0 dB for frequencies from 11.7-12.2 GHz.     

介质谐振器反馈型GaAs FET振荡器

本文扼要分析了高Q介质反馈型FET振荡器的原理,认为介质反馈型振荡器类同于高Q介质谐振器与FET栅极耦合的反射型振荡器。实验表明,在-40～+55℃范围内,频率稳定度达2.0ppm/℃,最佳可小于0.2ppm/℃。同时,介质温度系数对振荡电路的过补偿比欠补偿更有利于提高输出功率温度稳定性。     

A Ka-band micromachined low-phase-noise oscillator

A low-phase-noise 28.65 GHz oscillator has been demonstrated using a planar resonator. The resonator is micromachined close to the transistor and has an unloaded Q of 460. The oscillator uses a commercially available high electron mobility transistor (HEMT) for the active device, and results in an output power of 0.6 dBm with a 5.7% DC-RF efficiency. The measured phase noise is -92 dBc/Hz at a 100 kHz offset frequency and -122 dBc/Hz at 1 MHz offset frequency. This is compared with a low-Q planar design showing a 10 dB improvement in phase noise. The micromachined resonator is competitive with other hybrid nonplanar technologies, such as dielectric resonators     

应用介质谐振器构成微带集成耿氏振荡器的实验研究

——本文描述了介质谐振器的设计方法,着重阐述了应用介质谐振器构成微带集成耿氏振荡器的结构、基本理论和设计问题.在X波段,通过实验初步得到了9.56～10.70千兆赫频率范围内输出功率大于30毫瓦的介质集成振荡器.     

Voltage-controlled oscillator using dielectric resonator

A simple type of voltage-controlled oscillator using a dielectric resonator is presented for MIC applications, operating at 1.69 GHz. This gives a 0.5% tuning range, for -104 dBc/Hz FM noise     

高Q Ba(Zn_(1/3)Ta_(2/3))O_3介质谐振器材料及其在毫米波系统中的应用

叙述了Ｂａ（Ｚｎ１／３Ｔａ２／３）Ｏ３介质谐振器材料的制备、结构、微波性能及典型应用。Ｂａ（Ｚｎ１／３Ｔａ２／３）Ｏ３介质材料介电常数εｒ为２９．５，频率温度系数τ≈０（－５５～＋８５℃），１０ＧＨｚ下最大无载Ｑ值１４７００，在２８ＧＨｚ测得Ｑ值约为４８００。这种材料具有高Ｑ值，特别适用于Ｘ以上波段作为振荡器电路中频率稳定元件。用这种介质谐振器已研制出８ｍｍ介质稳频微带耿氏振荡器，频率稳定度小于１０×１０－６／℃，最大输出功率达１８０ｍＷ。     

U-band shield suspended-stripline Gunn DRO and VCO

A millimeter-wave IC dielectric resonator oscillator (DRO) is proposed. Equations that give the resonant frequency of the dielectric resonator DR in suspended stripline (SSL) are derived. A U-band voltage-controlled oscillator (VCO) with varactor tuning also has been developed. The Gunn diode and varactor used in both of the oscillators are commercially available packaged devices. Restrictions on the performance of the oscillators imposed by packaged and mounted networks and the self-characteristics of the solid-state devices have been analyzed. An electronic tuning range greater than 1000 MHz with an output power exceeding 15 dBm across the bandwidth in the 53-GHz region has been realized for the SSL VCO. An SSL DRO with an output power of more than 17 dBm and a mechanical tuning range of 1.5 GHz in the 54-GHz region has been achieved     

Piezoelectric-transducer-controlled tunable microwave circuits

This paper introduces a new method to tune microwave circuits of phase shifters, filters, resonators, and oscillators, controlled by a piezoelectric transducer (PET) with computational and experimental results. An optimized PET-controlled phase shifter is demonstrated to operate up to 40 GHz with a maximum total loss of 4 dB and phase shift of 480°. PET-controlled tunable bandpass filter, ring resonator, and one-dimensional photonic-bandgap resonator show a very wide tuning bandwidth of 17.5%-28.5% near 10 GHz with little performance degradation. A new PET-controlled or voltage-controlled dielectric-resonator oscillator (DRO) is demonstrated with a tuning bandwidth of 3.7% at the center frequency of 11.78 GHz. The tuning bandwidth is slightly less than that of a mechanical tuning using a micrometer-head-controlled tunable DRO with a tuning bandwidth of 4.7%. The new tuning method should have many applications in monolithic and hybrid microwave integrated circuits     

Cavity coupling structure for planar oscillators showing DR-likereflective characteristics

A new cavity coupling structure has been developed for low-phase noise oscillator applications. Unlike the conventional cavity coupling structures that show absorption at the resonant frequency, the new structure shows high reflection at resonance similar to dielectric resonators, making it suitable for the reflective oscillators. The fabricated cavity resonator showed a loaded Q-factor of 1200 and the X-band oscillator using the new resonator showed phase noise proper-ties of -57 and -83 dBc/Hz at 1 and 10 kHz offset, respectively. This is comparable to the best results of dielectric resonator oscillators using HEMTs at this frequency range     

基于基片集成波导谐振器的压控振荡器设计

设计了一种基于基片集成波导谐振器的X波段压控振荡器。首先分析了串联反馈式振荡器以及基片集成波导谐振器的理论,然后在高频电磁仿真软件ADS中进行仿真和设计,并通过将变容管合理地引入谐振器,实现了电调谐的目的。最终设计完成了一个工作于X波段的基片集成波导压控振荡器。此压控振荡器与传统的介质压控振荡器(DRO)相比,具有稳定性高、平面化以及成本低的优点。由于采用了ADS中的联合仿真功能进行振荡器的设计,仿真结果的准确性得到了提高,减小了实物的调试工作量。测试结果为:工作频率为7 GHz,调谐范围为30 MHz,输出功率≥7 dBm,谐波抑制度≥22 dBc,相位噪声优于-106 dBc/Hz@100 kHz。     

Demonstration of a 311-GHz Fundamental Oscillator Using InP HBT Technology

In this paper, a sub-millimeter-wave HBT oscillator is reported. The oscillator uses a single-emitter 0.3 m15 m InP HBT device with maximum frequency of oscillation greater than 500 GHz. The passive components of the oscillator are realized in a two metal process with benzocyclobutene used as the primary transmission line dielectric. The oscillator is implemented in a common base topology due to its inherent instability. The design includes an on-chip resonator, output matching circuitry, and injection locking port. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Additionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. This is the first fundamental HBT oscillator operating above 300 GHz.     

A Highly Stabilized Low-Noise GaAs FET Integrated Oscillator with a Dielectric Resonator in the C Band

A GaAs FET integrated oscillator stabilized with a BaO--TiO/sub 2/ system ceramic dielectric resonator provides a high-frequency-stabilized low-noise compact microwave power source. The newly developed ceramic has an expansion coefficient and dielectric constant temperature coefficient that offset each other and result in a small resonant frequency temperature coefficient. A stabilized oscillator output of 100 mW with a 17-percent efficiency and a frequency temperature coefficient as low as 2.3 ppm//spl deg/C are obtained at 6 GHz. FM noise level is reduced more the 30 dB by the stabilization. The dynamic properties of the oscillator and resonator are precisely measured to determine equivalent circuit representations. A large-signal design theory based on these equivalent circuit representations is presented to realize the optimal coupling condition between the oscillator and stabilizing resonator. The stabilized oscillator performance is sufficient for application to microwave communications systems.     

Design of a negative conductance dielectric resonator oscillator for X-band applications

An X-band tunable microwave low-phase noise planar oscillator employing a novel-fed dielectric resonator (DR) with a single transistor has been investigated and realized. A ZrSnTi oxide composite ceramic-based DR with dielectric permittivity of 95 enclosed in a metallic cavity with an unloaded Q factor of 5,000 at 10 GHz is proposed. The resonant frequency affinity with respect to geometric parameters is established by using the compensation technique based on dual negative conductance feedback, the outputs of which are combined via a Wilkinson power divider (WPD). The feedback parallel-coupled DR oscillator is incorporated into a laminate microwave board using the photolithographic technique. The oscillator includes a pseudomorphic low noise amplifier based on a high-electron-mobility transistor. Hence, the proposed oscillator with mechanic tuning is measured, and the results show that DR resonates at TE _01δ mode with frequency of 10 GHz. The measured phase noise of the oscillator is –81.03 dBc/Hz at a 100 kHz offset.     

A Highly Stabilized MIC Gunn Oscillator Using a Dielectric Resonator

An X-band frequency-stabilized MIC Gunn oscillator of a very simple structure using a dielectric resonator is developed. It is studied how the oscillating characteristics can be controlled by circuit parameters, with special attention to the factors affecting the frequency stability with temperature. By optimizing these factors and by selecting the proper temperature coefficient of a newly developed dielectric resonator, the high frequency stability of less than /spl plusmn/100 MHz over the temperature range from -20 to 60/spl deg/C (2x10 /sup -7/ / /spl deg/C) was obtained.