二氧化硅基质包埋硅纳米晶的微观结构和发光性能

利用离子注入和后续高温退火的方法制备了包埋在二氧化硅(Si02)基质中的硅纳米晶,研究了不同离子注入浓度试样的微观结构和发光性能,以及硅纳米晶的生长机理和发光机制.结果表明:较小的硅纳米晶(<5 nm)其生长机理符合Ostwald熟化机理,较大的纳米晶(>10 nm)则是由多个小纳米晶粒通过孪晶组合或融合而成的;离子注入浓度为8×1016cm-2的样品其发光强度是离子注入浓度为3×1017cm-2样品发光强度的5倍;硅纳米晶内部的微观结构缺陷(如孪晶和层错)对其荧光强度有很大的影响.     

镍基高温合金微孪晶形成机制的研究进展

镍基高温合金具有优良的成分兼容性、良好的组织稳定性、抗氧化和抗腐蚀性能,被广泛用于航空发动机和地面燃气轮机的涡轮叶片等关键的热端部件。沉淀相γ'对位错运动的阻碍是镍基高温合金的主要强化作用之一。一般而言,这种阻碍作用不仅与γ'相的形貌、体积分数及尺寸有关,也取决于γ'相与位错的交互作用。通常这种交互作用机制可分为三种:切割机制、Orowan绕过机制和热激活攀移机制。当不同类型的位错切割γ'相时,在γ'相中会形成不同的高能缺陷,能够阻碍位错运动,延缓材料软化。这类结构或成分缺陷包括:反相畴界(APB)、复杂层错(CSF)、超点阵内禀层错(SISF)、超点阵外禀层错(SESF)和微孪晶。微孪晶化(Micro-twinning)是镍基高温合金中一种重要的变形机制,主要发生在中温高应力条件下。此外,中温拉伸变形过程中也有微孪晶产生。早期研究表明,微孪晶的产生与SESF有关,可以认为SESF是"胚体孪晶",且SESF是由a/3〈112〉超点阵不全位错切入γ'相产生的。基于溶质原子短程扩散的原子重排(Reordering)机制被用来解释微孪晶的形成,即a/6〈112〉不全位错切入γ'相中先产生CSF,而后CSF通过原子重排转变为SESF,最终形成微孪晶。最近的研究表明,在微孪晶产生过程中,Co和Cr原子会在成分偏析和柯氏气团的作用下发生长程扩散,因此有学者指出微孪晶的形成是原子重排短程扩散机制和偏析主导的长程扩散共同作用的结果。同时,对于高温合金微孪晶机制的研究,研究人员不再局限于其形成机制,而对微孪晶的长大机制有了进一步的理解。共格的纳米孪晶界作为金属材料中的一种特殊缺陷,可以有效阻碍位错运动,从而强化材料,这种强化方式已经在纳米铜、TWIP钢以及Ti Al合金中得到应用。研究人员发现,孪晶能够强化固溶强化的镍合金;同时,有学者发现镍基高温合金中退火孪晶界对位错运动有明显的阻碍作用。因此,微孪晶化有望成为一种强化镍基高温合金的方法。本文归纳了镍基高温合金中微孪晶形成机制的发展和演变,分析了不全位错、内禀层错、外禀层错、复杂层错、元素偏析以及柯氏气团(Cottrell atmospheres)在微孪晶化中所起的作用,同时也阐述了孪晶界面处元素偏析在孪晶长大中的作用。此外,本文还综述了微孪晶在镍基高温合金强化中的作用,指出了通过微孪晶强化高温合金过程中存在的问题,展望了微孪晶在高温合金强化中的应用,为研究高温合金的中温变形机制和孪晶强化机制提供参考。     

室温合成团聚AuPd纳米粒子及其电催化性质(英文)

室温下以水合肼为还原剂,在N,N-二甲基甲酰胺中合成了团聚态的AuPd双金属纳米粒子。X射线衍射(XRD)表征结果证明,所合成的AuPd纳米粒子具有面心立方结构。高分辨透射电子显微镜表征表明,AuPd纳米粒子表面存在大量孪晶结构和晶面层错等表面缺陷。活性评价结果表明,具有高密度晶面缺陷的双团聚态AuPd纳米粒子对甲醇氧化表现出较好的催化活性。     

晶粒尺寸对Cu-30%Zn合金形变孪晶厚度的影响

对于面心立方结构的纳米金属,晶粒尺寸对孪生厚度(孪生核)的影响虽已有研究,但仍有待深入。本论文以Cu-30%Zn合金为模型材料,通过高压扭转变形技术、等径角挤压连同轧制技术变形得到晶粒尺寸在5~500nm的样品。透射电子显微镜观察发现:变形孪晶的片层厚度随晶粒尺寸的减小而减小,当晶粒尺寸小于20nm以后,孪晶厚度为(111)晶面间距(层错);另外,层错存在于各个不同尺寸范围的晶粒内,表明层错不受晶粒尺寸影响。研究结果表明在低层错能超细晶材料中,孪生变形是通过从晶界连续发射不全位错(层错)形成的。     

TiAl有序金属间化合物中的层错带与变形孪晶

采用 TEM 衍衬试验研究了 TiAl+Mn 合金中层错带和变形孪晶的特征。结果表明:所观察到的层错带是一组在平行(111)面上的重叠层错,提出这种重叠层错是由柏氏失量■=1/6[112]的不全位错扫过相继平行(111)面时形成的。分析结果还表明,按上述机制所形成的重叠层错的取向与观察到的变形孪晶一致。因此,重叠层错实际上是变形孪晶的胚胎。基于以上对层错带及变形孪晶形成过程的认识,本文进一步探讨了第三元素对 TiAl 基合金孪生变形及延性的影响。     

单晶Al在剪切变形时微观变形机制的分子动力学模拟

运用分子动力学模拟方法,研究Al在剪切变形下的微观变形机制,模拟初期铝变形主要以层错为主,孪晶数量较少。模拟进行到一定程度,由于晶体内部分切应力达到孪晶形核所需分切应力,孪晶开始大量出现,且以单层孪晶为主,多重孪晶为辅共同作用。并且出现近几年实验观察到的新缺陷结构五重孪晶,得出单晶Al在剪切变形下也会实现五重孪晶形核,生长。随剪切应变的进一步加大,形成的五重孪晶在晶体内部持续存在一段时间,但不会一直保留,先是转化为四重孪晶,并最终消亡。在模拟剪切一个完整周期后,材料内部出现取向异性的新晶粒,在此条件下实现晶粒细化。     

一种氧离子注入诱生缺陷的TEM表征

在利用氧离子注入工艺制备SOI材料的过程中,发现了一种"纳米网状"的结构缺陷.利用透射电镜、选区电子衍射和能谱分析对该缺陷进行了研究.结果表明,该缺陷呈网状,化学成分为硅和氧.初步研究认为,氧离子注入硅中所产生的穿通位错是形成该类缺陷的主要原因.     

缺陷闪锌矿晶体Hg_3In_2Te_6孪晶的EBSD和HRTEM观察

通过电子背散射衍射(EBSD)和高分辨透射电子显微术(HRTEM)对缺陷闪锌矿晶体Hg3In2Te6(MIT)中的孪晶进行观察。实验发现,大多数基体的应变能比孪晶小,且一些带状孪晶的所有孪晶界均不共格。此外,高密度结构空位的存在并未改变孪生面和孪生方向。上述结果可按照变形孪晶,并考虑高密度结构空位团簇的影响来解释。HRTEM观察显示孪晶界上存在着台阶和孪生位错,符合变形孪晶的特征。     

梯度结构铜铝合金的室温加工硬化行为EI北大核心CSCD

在液氮温度下将4 mm厚的Cu-4.5%(质量分数)Al合金板材双表面机械研磨2 min,形成~250μm厚的梯度结构层,在梯度结构层内产生了位错、层错、纳米孪晶等缺陷密度由表及芯呈梯度减少的微观结构,用数字图像相关法研究了拉伸过程中剪切带的演变过程。结果表明,双面约束的梯度结构材料能避免应变局部化,均匀分布的应力应变使材料避免了在较早阶段塑性失稳进入颈缩阶段,较好的保持了加工硬化能力。     

高应变速率下等径角挤压高纯粗晶铝中的形变孪晶与退火孪晶

在室温下对铸态高纯粗晶铝进行一道次高应变率动态等径角挤压(D-ECAP)变形,利用电子背散射衍射技术(EBSD)研究挤压过程中所形成的孪晶。结果表明:利用D-ECAP能够在粗晶铝中同时制备出形变孪晶和退火孪晶,但两者在形态、Kernel平均取向差(KAM)以及与相邻晶粒的取向差三个方面存在较大差异。D-ECAP高应变率和大剪切变形使高层错能铝中形成了百微米级的形变孪晶,形变孪晶的形态为透镜状,后续变形使得孪晶界偏离∑3 60°〈111〉取向关系且KAM值主要集中于0.6°~1.8°。高应变率剪切变形下形成的大量层错和复杂的位错组态以及高形变储存能在变形温升的作用下促进了退火孪晶的形成。退火孪晶的形态较不规则,但孪晶界的取向关系更接近于∑3 60°〈111〉且KAM值主要集中于0.2°~0.5°。     

Structural investigations of homoepitaxial Si films grown at low temperature by pulsed magnetron sputtering on Si(111) substrates

Using pulsed magnetron sputtering at low substrate temperature (T_s = 580 °C) the homoepitaxial growth on Si(111) was studied. The films were comprehensively characterized by cross-section transmission electron microscopy and various diffraction methods. Up to a film thickness of 1240 nm no breakdown of the epitaxial growth was observed. The surface microstructure, characterized by electron backscatter diffraction, exhibits exclusively crystalline structure with (111) orientation. Careful analysis of selected area electron diffraction patterns and high-resolution X-ray diffraction data clearly proves the existence of twinning/stacking faults in the {111} planes. Besides these defects – which are typical for low-temperature epitaxy – no additional significant defects related to the energetic particle bombardment by the sputter deposition method are observed.     

Catalyst incorporation at defects during nanowire growth

Scanning and transmission electron microscopy was used to correlate the structure of planar defects with the prevalence of Au catalyst atom incorporation in Si nanowires. Site-specific high-resolution imaging along orthogonal zone axes, enabled by advances in focused ion beam cross sectioning, reveals substantial incorporation of catalyst atoms at grain boundaries in <110> oriented nanowires. In contrast, (111) stacking faults that generate new polytypes in <112> oriented nanowires do not show preferential catalyst incorporation. Tomographic reconstruction of the catalyst-nanowire interface is used to suggest criteria for the stability of planar defects that trap impurity atoms in catalyst-mediated nanowires.     

Planar defects and phase transformation in ZnSe nanosaws

ZnSe nanostructures were grown on Si substrates by Au catalyzed vapor phase growth at 725°C. Three different types of ZnSe nanosaws have been observed using transmission electron microscopy (TEM). Detailed structural and microstructural investigation has been carried out using electron diffraction and high-resolution TEM (HRTEM). It has been found that stacking faults and phase transformation are important features of the nanosaw formation. The controlled formation of these ZnSe nanosaws could have very important device applications.     

Comparison of defect structures in homo- and hetero-epitaxial GaP,grown using excimer laser-assisted MOVPE

Defect structures in excimer laser-assisted epitaxial GaP on (1 0 0) GaP and (1 0 0) GaAs have been examined using transmission electron microscopy (TEM). It was found that the dominant defect structures in homo-epitaxy were dislocations and stacking faults whereas the major defects in hetero-epitaxy were twins. Differential plastic deformation-induced stresses are believed to be responsible for the high density of twins in hetero-epitaxy.     

Defects in silicon carbide

Defects in various forms of SiC, both single crystal and polycrystalline, have been examined using transmission electron microscopy. Dislocations were not as common as stacking faults, which were observed in all materials examined. The mechanism of formation of stacking faults is discussed and two types of both intrinsic and extrinsic faults are shown possible. The stacking-fault energy of SiC was measured to be 1.9 ergs/cm² by the extended node method.     

Defects in nickel ferrite thin films grown by chemical vapour deposition

Thin single-crystal films of nickel ferrite have been grown on magnesia substrates. The structure of the films has been examined using X-ray diffraction, scanning electron microscopy and transmission electron microscopy and diffraction. The films are characterized by arrays of planar faults on {110} due to faults in cation arrangements in the nickel ferrite spinel lattice. The origin of these defects is discussed.     

Defects induced by P+-implanted in silicon

Cross-section transmission electron microscopy (X-TEM) has been used to show the microstructures and the defects in P⁺-implanted (100) silicon crystals. P⁺ implantation was done at room temperature with the energy of 150 keV and the dose of 1 × 10¹⁵cm^–2. High resolution electron microscopy (HREM) image of (0 1 ¯1) slice shows that there are an amorphous layer 110 nm below the incident surface of specimen with thickness of about 100 nm, and two imperfect layers located symmetrically on each side of the amorphous layer in which there are various kinds of defects. {1 1 1} stacking faults and stacking fault tetrahedra are found near the amorphous layer, and {3 1 1} defects are far away from the layer. The interfaces between the amorphous and the imperfect layers are rough, the substrate, however, remains perfect.     

Hetero-epitaxy and structure characterization of Si films on 6H-SiC substrates

In order to realize the non-ultraviolet application of SiC optoelectronic devices, Si/6H-SiC heterojunctions were prepared by the low-pressure chemical vapour deposition at 850 °C. The X-ray diffraction (XRD) and the selected area electron diffraction (SAED) results indicate that Si thin films have a monocrystalline structure and were grown along the (111) crystal plane. The rationality of the (111) growth plane was also analyzed by the theoretical calculation. High-density structural defects such as stacking faults and twins were observed on Si films by the high-resolution transmission electron microscopy. This phenomenon was also validated by the SAED patterns of defect-rich regions on Si films.     

A study of Si epitaxial layer growth on SOI wafers prepared by SIMOX

The epitaxial Si layers were deposited onto silicon on insulator (SOI) substrates by chemical vapor deposition technology, and SOI substrates were manufactured with separation by implantation of oxygen technology. The dislocations and stacking faults of epitaxial Si layer and substrate were examined and their densities were calculated, respectively. The surfaces of epitaxial Si layer and SOI substrate were studied by atomic force microscopy. The SOI substrates and the epitaxial Si layers were characterized by Rutherford backscattering and channeling spectroscopy. Transmission electron microscopy was used to observe the defect in epitaxial layer. The result shows that the defects in the epitaxial Si layer on low dose substrate are less than those in the epitaxial Si layer on standard dose substrate, and also that the defects in low dose substrate are less than those in standard dose substrate. The crystallinity of epitaxial Si layer on low dose substrate is better than that of epitaxial Si layer on standard dose substrate.     

Deformation defects in nanocrystalline nickel

Defects induced by plastic deformation in electrodeposited, fully dense nanocrystalline (nc) Ni with an average grain size of 25 nm have been characterized by means of high resolution transmission electron microscopy. The nc Ni was deformed under uniaxial tension at liquid-nitrogen temperature. Trapped full dislocations were observed in the grain interior and near the grain boundaries. In particular, these dislocations preferred to exist in the form of dipoles. Deformation twinning was confirmed in nc grains and the most proficient mechanism is the heterogeneous nucleation via emission of partial dislocations from the grain boundaries.