Composite silver electrode for double‐sided‐emitting stacked organic light‐emitting diode

Abstract— A reflective composite silver electrode is proposed and characterized as the middle electrode of a stacked organic light‐emitting diode (OLED) with double‐sided light emission. The proposed electrode is composed of a thermally evaporated stack of LiF (1 nm)/Al (3 nm)/Ag (70 nm) layers. The LiF/Al and the plasma‐treated Ag of the electrode function well as the respective cathode and anode of the bottom‐ and top‐emitting stacked OLEDs, with both being of the non‐inverted type. Power efficiencies of 10.3 and 12.1 lm/W at 100 cd/m² have been measured for bottom‐ and top‐emitting OLEDs, respectively, using dye doping. The stacked OLED having this bipolar middle electrode can be constructed as a two‐terminal‐only device, allowing for simpler driving schemes in double‐side‐emitting passive‐/active‐matrix OLED displays.     

Characterization of light extraction efficiency for WOLEDS with light‐out‐coupling layer

We studied the light extraction efficiencies of white organic light‐emitting diodes with a light‐out‐coupling layer by simulations and experiments. The light extraction efficiencies estimated by the simulation were confirmed to agree well with those measured by the experiments. Moreover, we successfully obtained the high light extraction efficiency (η_OC) of 69%.     

Non‐polar‐oriented InGaN light‐emitting diodes for liquid‐crystal‐display backlighting

Abstract— This article addresses spontaneously polarized light emission from GaN‐based light‐emitting diodes (LEDs) fabricated on electrically non‐polar crystallographic orientations and application of spontaneously polarized emission for backlighting of liquid‐crystal displays (LCDs). The first half of the article describes polarized light emission from GaN‐based LEDs and its role in solid‐state lighting technology. The second half reports on our experimental work to explore the potential of non‐polar LEDs for LCD backlighting applications. Optical transmission of non‐polar LED emission was characterized through a liquid‐crystal layer. Extinction ratios of 0.21 were measured between zero and an applied bias voltage to the liquid‐crystal cells. These extinction ratios are not particularly high yet; nevertheless, the experiment has demonstrated the potential of such non‐polar LEDs for LCD backlighting.     

Analyzing and tuning emission characteristics of top‐emitting organic light‐emitting devices

Abstract— Top‐emitting organic light‐emitting devices (OLEDs) have several technical merits for application in active‐matrix OLED displays. Generally, stronger microcavity effects inherent with top‐emitting OLEDs, however, complicate the optimization of device efficiency and other viewing characteristics, such as color and viewing‐angle characteristics. In this paper, using the rigorous classical electromagnetic model based on oscillating electric dipoles embedded in layered structures, the emission characteristics of top‐emitting OLEDs as a function of device structures will be analyzed. From comprehensive analysis, trends in the dependence of ewmission characteristics on device structures were extracted, and, accordingly, a general methodology for optimizing viewing characteristics of top‐emitting OLEDs for display applications will be suggested. The effectiveness of the analysis and the methodology was confirmed by experimental results.     

Indium tin oxide anode modification for enhanced polymer light‐emitting devices

Abstract— Effort has been focused on exploring indium tin oxide (ITO) anode modification for enhanced performance of polymer light‐emitting diodes (PLEDs). It was found that oxidative treatment, e.g., a commonly used oxygen plasma, modifies ITO surface effectively to produce a low‐conductivity oxygen‐rich region. As a consequence, oxygen plasma‐treated ITO behaves somewhat similarly to specimens where there is an ultra‐thin insulating layer on its surface. It shows that the presence of such an ultra‐thin insulating interlayer between the ITO and the polymer layer favors the efficient operation of the PLEDs. The result of this effort provides an insight to better understand optimal anode contact for enhanced PLED performance.     

Review Paper: Progress on efficient cathodes for organic light‐emitting diodes

Abstract— Balanced charge injection is essential for highly efficient and stable OLEDs. Various cathode materials, such as elemental metals, metal alloys, and metal compounds, have been adopted to facilitate electron injection. Currently, composite cathodes utilizing an electron‐injection layer and an air‐stable metal, such as LiF/Al, is the most common choice. This article will review the progress of efficient vacuum‐evaporated cathodes for OLEDs and their mechanisms.     

Charge‐recombination processes in oligomer‐ and polymer‐based light‐emitting diodes: A molecular picture

Abstract— An overview of our recent work on the mechanisms of singlet and triplet exciton formation in electroluminescent π‐conjugated materials will be presented. According to simple spin statistics, only one‐fourth of the excitons are formed as singlets. However, deviations from that statistics can occur if the initially formed triplet charge‐transfer (CT) excited states are amenable to intersystem crossing or dissociation. Although the electronic couplings between the CT states and the neutral exciton states are expected to be largest for the lowest singlet and triplet excitons (S¹ and T¹, respectively), the possibility for direct recombination into T¹ is always very small due to the large exchange energy. In small molecules, spin statistics is expected to be observed because both singlet and triplet exciton formations proceed via higher‐lying S_n/T_n states with similar electronic couplings and fast formation rates. In extended conjugated chains, however, that the ¹CT → S¹ pathway is faster while the ³CT → ^Tn channels become much slower, opening the route to intersystem crossing or dissociation among the ³CT states.     

Improvement of extraction efficiency for GaN-based light emitting diodes

A simple, low cost method for mass production to enhance the light extraction efficiency of GaN-related LEDs was proposed. With appropriate process parameters, the nature lithography of nanosphere can be used to fabricate two-dimensional nanostructures, including the nanomesh ZnO layer, photonic crystal (PhC) patterned p-GaN, and patterned sapphire substrates. Based on preliminary results, the extraction efficiencies of LEDs with these nanostructures can thus be improved and the nature lithography is demons...     

Inorganic light‐emitting diode displays using micro‐transfer printing

Large quantities of microscopic red, green, and blue light‐emitting diodes (LEDs) made of crystalline inorganic semiconductor materials micro‐transfer printed in large quantities onto rigid or flexible substrates form monochrome and color displays having a wide range of sizes and interesting properties. Transfer‐printed micro‐LED displays promise excellent environmental robustness, brightness, spatial resolution, and efficiency. Passive‐matrix and active‐matrix inorganic LED displays were constructed, operated, and their attributes measured. Tests demonstrate that inorganic micro‐LED displays have outstanding color, viewing angle, and transparency. Yield improvement techniques include redundancy, physical repair, and electronic correction. Micro‐transfer printing enables revolutionary manufacturing strategies in which microscale LEDs are first assembled into miniaturized micro‐system “light engines,” and then micro‐transfer printed and interconnected directly to metallized large‐format panels. This paper reviews micro‐transfer printing technology for micro‐LED displays.     

Organic light‐emitting diodes with enhanced out‐coupling efficiency using high‐refractive‐index glass frit

We have fabricated a novel type of substrate for organic light‐emitting diodes (OLEDs) to improve the light out‐coupling efficiency. It was fabricated by forming an excellent flat layer using a high‐refractive‐index B₂O₃‐SiO₂‐Bi₂O₃ frit glass on the light diffusive glass substrate. By using this substrate, we have sufficiently reduced the total internal reflection of OLEDs, and we successfully obtained more than 1.9 times higher light out‐coupling efficiency without spectral changes and viewing angle dependency. Furthermore, we have also successfully demonstrated 50 × 50 mm large‐area white OLEDs with this novel substrate.     

Improved performance of organic light‐emitting devices with ultra‐thin hole‐blocking layers

Abstract— Tris‐(8‐hydroxyqunoline) aluminum (Alq₃)‐based organic light‐emitting devices (OLEDs) using different thickness of 2,9‐Dimethyl‐4,7‐diphenyl‐1,110‐phenanthorline (BCP) as a hole‐blocking layer inserted both in the electron‐ and hole‐transport layers have been fabricated. The devices have a configuration of indium tin oxide (ITO)/m‐MTDATA (80 nm)/BCP (X nm)/NPB (20 nm)/Alq₃ (40 nm)/BCP (X nm)/Alq₃ (60 nm)/Mg: Ag (200 nm), where m‐MTDATA is 4, 4′, 4″‐Tris(N‐3‐methylphenyl‐N‐phenyl‐amino) triphenylamine, which is used to improve hole injection and NPB is N,N′‐Di(naphth‐2‐yl)‐N,N′‐diphenyl‐benzidine. X varies between 0 and 2 nm. For a device with an optimal thickness of 1‐nm BCP, the current and power efficiencies were significantly improved by 47% and 43%, respectively, compared to that of a standard device without a BCP layer. The improved efficiencies are due to a good balance between the electron and hole injection, exciton formation, and confinement within the luminescent region. Based on the optimal device mentioned above, the NPB layer thickness influences the properties of the OLEDs.     

Full color quantum dot light‐emitting diodes patterned by photolithography technology

Quantum dot light‐emitting diodes are promising candidates for next generation displays. For display application, a pixel consists of red (R), green (G), and blue (B) side‐by‐side sub‐pixels, which thereby requires a high resolution patterning of the light‐emission layers. In this work, the quantum dot (QD) light‐emitting layers are fine patterned by using the photolithography and the lift‐off techniques. To facilitate the lift‐off process, reverse photoresist AZ5214E is used because of its special inverted trapezoidal structure after developing. To prevent the QDs being washed off during the lift‐off process, the ZnMgO layer is treated by the hydrophobic material hexamethyldisilazane. With hexamethyldisilazane treatment, the adhesion between the QDs and the ZnMgO is effectively improved. As a result, side‐by‐side R/G/B QD with pixel size of 30 μm × 120 μm is successfully achieved. After patterning, the R, G, and B‐quantum dot light‐emitting diodes exhibit a maximum current efficiency of 11.6 cd/A, 29.7 cd/A, and 1.5 cd/A, respectively. This work confirms the feasibility of patterning QDs by using the photolithography and the lift‐off techniques.     

All solution‐processed white quantum‐dot light‐emitting diodes with three‐unit tandem structure

Quantum‐dot light‐emitting diodes (QLEDs) are promising candidates for next generation displays. White QLEDs which can emit red, green and blue colors are particularly important; this is because the combination of white QLEDs and color filters offers a practical solution for high‐resolution full‐color displays. In this work, we demonstrate all‐solution processed three‐unit (red/green/blue) white tandem QLEDs for the first time. The white tandem devices are achieved by serially connecting the red bottom sub‐QLED, the green middle sub‐QLED and the blue top sub‐QLED using the inter‐connecting layer (ICL) based on ZnMgO/PEDOT:PSS heterojunction. With the proposed ICL, the two‐unit tandem QLEDs exhibit a high current efficiency of 22.22 cd/A, while the three‐unit white QLEDs exhibit evenly separated red, green and blue emission with a CIE coordinate of (0.30, 0.44), a peak current efficiency of 4.75 cd/A and a high luminance of 4206 cd/m². Displays based on the developed white QLEDs exhibit a wide color gamut of 114% NTSC. This work confirms the effectiveness of the proposed ZnMgO/PEDOT:PSS ICL and the feasibility of making all‐solution processed tandem white QLEDs by using the proposed ICL.     

Passive‐matrix polymer light‐emitting displays

Abstract— Organic light‐emitting device research focuses on the use of small‐molecule and polymer materials to make organic electroluminescent displays, with both passive‐ and active‐matrix technologies. This paper will focus on the characteristics of red, green, and blue electroluminescent polymers suitable for fabricating monochrome and full‐color passive‐matrix displays. The stability of polymer OLEDs, and the use of ink‐jet printing for direct high‐resolution patterning of the light‐emitting polymers will also be discussed. It will be shown that the performance of light‐emitting polymers is at the brink of being acceptable for practical applications.     

Nanorod‐form ZnO‐homojunction ultraviolet light‐emitting diodes

Abstract— Ultraviolet (UV) light‐emitting diodes based on ZnO‐homojunction nanorods is reported. p‐type doping can be obtained from intrinsic (or close to) ZnO by introducing acceptors, such as P or As, using ion implantation followed by appropriate thermal annealing and dopant activation. Our approach provides a possible solution to p‐type doping of ZnO and ZnO‐homojunction light‐emitting diodes. It is interesting to note that this solution is offered in the form of nanorods.     

Luminous‐efficiency improvement of solar‐cell‐integrated high‐contrast organic light‐emitting diode by applying distributed Bragg reflector

Abstract— Solar‐cell‐integrated organic light‐emitting diodes (OLEDs) were fabricated with both high contrast ratio and energy‐recycling ability. However, the luminous efficiency of the integrated devices is reduced to 50% of that of conventional top‐emitting OLEDs. A novel structure to recover the luminous efficiency from 50% to near 85% by applying a distributed Bragg reflector (DBR) made of 20 layers of GaN/AlN was demonstrated. It saves about 40% of the electric power than that of a device without a DBR. The contrast ratio remains high compared to that of conventional OLEDs. In this paper, simulations were conducted first to prove our models and assumptions. Then, two types of thin‐film solar cells — CdTe and CIGS solar cells — were used. They had different contrast ratios as well as viewing‐angle properties. Finally, the emission spectrum was calculated to be 11 nm FWHM, which is narrower than that for the emission spectrum of a typical microcavity OLED and has the advantage of having saturated colors.     

Active‐matrix organic light‐emitting diode displays with indium gallium zinc oxide thin‐film transistors and normal,inverted, and transparent organic light‐emitting diodes

Abstract— Active‐matrix organic light‐emitting diode (AMOLED) displays have gained wide attention and are expected to dominate the flat‐panel‐display industry in the near future. However, organic light‐emitting devices have stringent demands on the driving transistors due to their current‐driving characteristics. In recent years, the oxide‐semiconductor‐based thin‐film transistors (oxide TFTs) have also been widely investigated due to their various benefits. In this paper, the development and performance of oxide TFTs will be discussed. Specifically, effects of back‐channel interface conditions on these devices will be investigated. The performance and bias stress stability of the oxide TFTs were improved by inserting a SiO^x protection layer and an N²O plasma treatment on the back‐channel interface. On the other hand, considering the n‐type nature of oxide TFTs, 2.4‐in. AMOLED displays with oxide TFTs and both normal and inverted OLEDs were developed and their reliability was studied. Results of the checkerboard stimuli tests show that the inverted OLEDs indeed have some advantages due to their suitable driving schemes. In addition, a novel 2.4‐in. transparent AMOLED display with a high transparency of 45% and high resolution of 166 ppi was also demonstrated using all the transparent or semi‐transparent materials, based on oxide‐TFT technologies.     

Passive‐matrix displays based on light‐emitting polymers

Abstract— The design architecture, product specification, and reliability of the first high‐resolution commercially available passive‐matrix displays based on light‐emitting polymers will be presented. Also, the applications and benefits of this new low‐cost display technology will be discussed.     

Device‐dependent angular luminance enhancement and optical responses of organic light‐emitting devices with a microlens‐array film

Abstract— By taking the organic emitter apodization calculated from electromagnetic theory as input, the angular luminance enhancement of organic light‐emitting devices (OLEDs) with a microlens‐array film (MAF) can be further evaluated by the ray‐tracing approach. First, the OLEDs of different Alq³ thickness are fabricated and their angular luminance measurements are compared to simulation results. Second, mode analyses for different layers are performed to estimate the enhancement potential of the MAF‐attached devices. Finally, by decreasing the Alq³ thickness, increasing the viewing angle, and attaching the MAF, the EL spectral peak shifts of the OLEDs seem irregular, but the spectral blue shifts induced by the optical structures are all explained by the optical responses (EL spectra divided by the intrinsic PL spectrum). In conclusion, the organic emitters with higher off‐axis‐angle luminous intensity cause lower out‐coupling efficiency but gain higher enhancement after the MAF is attached. With the choices of apodizations and microstructures, the tailored or customized angular radiation patterns can be also made possible.     

A three-colour 16×16 element light emitting diode display module

This paper briefly reviews the materials used in LED manufacture and describes types and applications of simple LED displays. A three-colour 16 × 16 element display module is introduced. By using metallic ribbons to wire the elements on the display side in place of wire bonding, it is expected that the modules will be more easily mass-producible.