Energy‐efficient liquid‐crystal displays (e2‐LCDs) using a photonic‐crystal backlight system

Abstract— Cholesteric liquid crystals automatically form one‐dimensional photonic crystals. For a photonic crystal in which light‐emitting moieties are embedded, unique properties such as microcavity effects and simultaneous light emission and light reflection can be expected. Three primary‐color photonic‐crystal films were prepared based on cholesteric liquid crystal in which fluorescent dye is incorporated. Microcavity effects, i.e., emission enhancement and spectrum narrowing, were observed. Two types of demonstration liquid‐crystal displays (LCDs) were fabricated using the prepared photonic‐crystal films in a backlight system. One is an area‐color LCD in which a single photonic‐crystal layer is used for each color pixel and the other is a full‐color TFT‐LCD in which three stacked photonic‐crystal layers are used as light‐conversion layers. The area‐color LCD was excited by using 365‐nm UV light, and the full‐color TFT‐LCD was excited by using 470‐nm blue LED light. Because of the photonic crystal's unique features that allow it to work as light‐emitting and light‐reflecting layers simultaneously, both LCDs demonstrate clear readable images even under strong ambient light, such as direct‐sunlight conditions, under which conventional displays including LCDs and OLED displays cannot demonstrate clear images. In particular, an area‐color LCD, which eliminated color filters, gives clear images under bright ambient light conditions even without backlight illumination. This fact suggests that a backlight system using novel photonic‐crystal layers will be suitable for energy‐efficient LCDs (e²‐LCDs), especially for displays designed for outdoor usage.     

Infrared sensors using poly‐Si thin‐film transistors for proximity sensors integrated in smartphone displays

We have developed infrared sensors using poly‐Si thin‐film transistors (TFTs) for proximity sensors integrated in smartphone displays. Initially, we evaluate the infrared sensitivities of the poly‐Si TFTs, and it is found that a pin‐type TFT is suitable for the infrared sensors. Next, we propose three types of the infrared sensors. First, an analog current detection‐type sensor has a simple structure, and it is found that it can detect presence of a hand. Second, a lock‐in detection‐type sensor has tolerance against ambient light, and it is found that it can detect a target signal under noise signals. Third, a frequency detection‐type sensor has an advantage that only a digital circuit is necessary for detection, and it is found that it can detect the infrared intensity because the oscillation frequency increases monotonically with the intensity. We can utilize these infrared sensors on demand.     

A highly sensitive and low‐noise IR photosensor based on a‐SiGe as a sensing and noise filter: Toward large‐sized touch‐screen LCD panels

Abstract— The a‐SiGe TFT photosensor for embedded touch‐screen panels (TSPs) was characterized by comparison with an a‐Si sensor. The photoresponse of an a‐SiGe sensor at a 850‐nm wavelength was much higher than that of a‐Si, indicating that a‐SiGe is a strong candidate material for an IR sensor. In order to increase the signal‐to‐noise ratio, the incident visible light was filtered by incorporating a bandpass‐filter layer. An a‐SiGe IR‐sensor‐embedded LCD panel was successfully demonstrated, showing an excellent multitouch property independent of ambient‐light conditions. This technology can be widely used in multifunctional TSPs.     

Novel a‐Si:H TFT pixel circuit for electrically stable top‐anode light‐emitting AMOLEDs

Abstract— A novel pixel circuit for electrically stable AMOLEDs with an a‐Si:H TFT backplane and top‐anode organic light‐emitting diode is reported. The proposed pixel circuit is composed of five a‐Si:H TFTs, and it does not require any complicated drive ICs. The OLED current compensation for drive TFT threshold voltage variation has been verified using SPICE simulations.     

Touch‐screen panel integrated into 12.1‐in. a‐Si:H TFT‐LCD

Abstract— A touch‐screen‐panel (TSP) embedded 12.1‐in. LCD employing a standard existing a‐Si:H TFT‐LCD process has been successfully developed. Compared with conventional external touch‐screen panels, which use additional components to detect touch events, the new internal TSP exhibits a clearer image and improved touch feeling, as well as increased sensing speed using discrete sensing lines to enable higher‐speed sensing functions including handwriting. The new internal digital switching TSP can be fabricated with low cost because it does not require any additional process steps compared to a standard a‐Si:H TFT‐LCD.     

LED‐backlight feedback control system with integrated amorphous‐silicon color sensor on an LCD panel

Abstract— Thin‐film‐transistor liquid‐crystal displays (TFT‐LCDs) have the largest market share of all digital flat‐panel displays. An LCD backlighting system employing a three‐color red‐green‐blue light‐emitting diode (RGB‐LED) array is very attractive, considering its wide color gamut, tunable white point, high dimming ratio, long lifetime, and environmental compatibility. But the high‐intensity LED has problems with thermal stability and degradation of brightness over time. Color and white luminance levels are not stable over a wide range of temperature due to inherent long‐term aging characteristics. In order to minimize color point and brightness differences over time, optical feedback control is the key technology for any LED‐backlight system. In this paper, the feasibility of an optical color‐sensing feedback system for an LED backlight by integrating the amorphous‐silicon (a‐Si) color sensor onto the LCD panel will be presented. To minimize the photoconductivity degradation of a‐Si, a new laser exposure treatment has been applied. The integrated color‐sensor optical‐feedback‐controlled LED‐backlight system minimized the color variation to less than 0.008 Δu'v' (CIE1976) compared to 0.025 for an open‐loop system over the temperature range of 42–76°C.     

Active‐matrix organic light‐emitting displays employing two thin‐film‐transistor a‐Si:H pixels on flexible stainless‐steel foil

Abstract— An active‐matrix organic light‐emitting diode (AMOLED) display driven by hydrogenated amorphous‐silicon thin‐film transistors (a‐Si:H TFTs) on flexible, stainless‐steel foil was demonstrated. The 2‐TFT voltage‐programmed pixel circuits were fabricated using a standard a‐Si:H process at maximum temperature of 280°C in a bottom‐gate staggered source‐drain geometry. The 70‐ppi monochrome display consists of (48 × 4) × 48 subpixels of 92 ×369 μm each, with an aperture ratio of 48%. The a‐Si:H TFT pixel circuits drive top‐emitting green electrophosphorescent OLEDs to a peak luminance of 2000 cd/m².     

A new a‐Si:H TFT pixel circuit employing data‐reflected negative‐bias annealing for a stable and uniform AMOLED

Abstract— A new a‐Si:H pixel circuit to reduce the VTH degradation of driving a‐Si:H thin‐film transistors (TFTs) by data‐reflected negative‐bias annealing (DRNBA) is presented. The new pixel circuit compensates VTH variation induced by non‐uniform degradation of each a‐Si:H pixel due to various electrical stress. The proposed pixel circuit was verified by SPICE simulations. Although the VTH of the driving a‐Si:H TFT varies from 2.5 to 3.0 and 3.5 V, the organic light‐emitting diode (OLED) current changes by only 1.5 and 2.8% in the emission period, respectively. During the negative‐bias annealing period, the negative VGS is applied to the driving TFT by using its own data signal. It is expected that the VTH shift of the driving TFT can be effectively reduced and the VTH shift can be compensated for in our new pixel circuit, which can contribute to a stable and uniform image from an a‐Si:H TFT active‐matrix OLED.     

Compact modeling of amorphous‐silicon thin‐film transistors with BSIM3

Abstract— A novel approach of modeling a‐Si:H TFTs with the industry‐standard BSIM3 compact model is presented. The described approach defines the a‐Si:H TFT drain current and terminal charges as explicit functions of terminal voltages using a minimum set of BSIM3 parameters. The set of BSIM3 parameters is chosen based on the electrical and physical characteristics of the a‐Si:H TFT and their values extracted from measured data. By using the selected BSIM3 model parameters, the a‐Si:H TFT is simulated inside SPICE to fit the simulated I‐V and C‐V curves with the measured results. Finally, the extracted BSIM3 model is validated by simulating the kickback voltage effect in an AMLCD pixel array.     

Investigation of the hysteresis phenomenon of an a‐Si:H TFT at an elevated temperature for AMOLED displays

Abstract— The temperature dependence of the hysteresis of an a‐Si:H TFT has been investigated. An a‐Si:H TFT pixel driving scheme has been proposed and investigated. This scheme can eliminate changes in the organic light‐emitting diode (OLED) current caused by hysteresis of an a‐Si:H TFT. The VTH of the a‐Si:H TFT was changed according to the gate‐voltage sweep direction because of the hysteresis of the a‐Si:H TFT. The variation of VTH for a a‐Si:H TFT decreased from 0.41 to 0.17 V at an elevated temperature of 60°C because the sub‐threshold slope (s‐slope) of the a‐Si:H TFT, in the reverse voltage sweep direction, increased more than in the forward voltage sweep direction due to a greater increase in the initial electron trapped charges than the hole charges. Although the OLED current variation caused by hysteresis decreased (～14%) as the temperature increased, the error in the OLED current needed to be improved in order to drive the pixel circuit of AMOLED displays. The proposed pixel circuit can apply the reset voltage (?10 V) before the data voltage for the present frame that was written to fix the sweep direction of the data voltage. The variation in the OLED current caused by hysteresis of the a‐Si:H TFT was eliminated by the fixed voltage sweep direction in the proposed pixel circuit regardless of operating temperature.     

Low‐power‐consumption TFT‐LCD with dynamic memory embedded in the pixels

A low‐power‐consumption thin‐film‐transistor liquid‐crystal display (TFT‐LCD) with dynamic memory cells embedded in each pixel using low‐temperature poly‐Si technology has been developed. By holding data in the memory, the operating rate of the data driver can be dramatically reduced to 4 Hz. Eight levels of gray scale with low power consumption can be achieved by using the area‐ratio gray‐scale method. This TFT‐LCD can be used for displaying fine still images, with low power consumption.     

Vt Compensated voltage‐data a‐Si TFT AMOLED pixel circuits

Abstract— Active‐matrix organic light‐emitting‐diode (AMOLED) displays are now entering the marketplace. The use of a thin‐film‐transistor (TFT) active matrix allows OLED displays to be larger in size, higher in resolutions and lower in power dissipation than is possible using a conventional passive matrix. A number of TFT active‐matrix pixel circuits have been developed for luminance control, while correcting for initial and electrically stressed TFT parameter variations. Previous circuits and driving methods are reviewed. A new driving method is presented in which the threshold‐voltage (V_t) compensation performance, along with various circuit improvements for amorphous‐silicon (a‐Si) TFT pixel circuits using voltage data, are discussed. This new driving method along with various circuit improvements is demonstrated in a state‐of‐the‐art 20‐in. a‐Si TFT AMOLED HDTV.     

Low‐temperature amorphous‐silicon backplane technology development for flexible displays in a manufacturing pilot‐line environment

Abstract— A low‐temperature amorphous‐silicon (a‐Si:H) thin‐film‐transistor (TFT) backplane technology for high‐information‐content flexible displays has been developed. Backplanes were integrated with frontplane technologies to produce high‐performance active‐matrix reflective electrophoretic ink, reflective cholesteric liquid crystal and emissive OLED flexible‐display technology demonstrators (TDs). Backplanes up to 4 in. on the diagonal have been fabricated on a 6‐in. wafer‐scale pilot line. The critical steps in the evolution of backplane technology, from qualification of baseline low‐temperature (180°C) a‐Si:H process on the 6‐in. line with rigid substrates, to transferring the process to flexible plastic and flexible stainless‐steel substrates, to form factor scale‐up of the TFT arrays, and finally manufacturing scale‐up to a Gen 2 (370 × 470 mm) display‐scale pilot line, will be reviewed.     

Process study and optimization for fabrication of poly‐Si thin‐film transistors on plastic substrates

Abstract— A complete poly‐Si thin‐film transistor (TFT) on plastic process has been optimized to produce TFT arrays for active‐matrix displays. We present a detailed study of the poly‐Si crystallization process, a mechanism for protecting the plastic substrate from the pulsed laser used to crystallize the silicon, and a high‐performance low‐temperature gate dielectric film. Poly‐Si grain sizes and the corresponding TFT performance have been measured for a range of excimer‐laser crystallization fluences near the full‐melt threshold, allowing optimization of the laser‐crystallization process. A Bragg reflector stack has been embedded in the plastic coating layers; its effectiveness in protecting the plastic from the excimer‐laser pulse is described. Finally, we describe a plasma pre‐oxidation step, which has been added to a low‐temperature (<100°C) gate dielectric film deposition process to dramatically improve the electrical properties of the gate dielectric. These processes have been integrated into a complete poly‐Si TFT on plastic fabrication process, which produces PMOS TFTs with mobilities of 66 cm² /V‐sec, threshold voltages of ?3.5 V, and off currents of approximately 1 pA per micron of gate width.     

A novel TFT‐OLED integration for OLED‐independent pixel programming in amorphous‐Si AMOLED pixels

Abstract— The direct voltage programming of active‐matrix organic light‐emitting‐diode (AMOLED) pixels with n‐channel amorphous‐Si (a‐Si) TFTs requires a contact between the driving TFT and the OLED cathode. Current processing constraints only permit connecting the driving TFT to the OLED anode. Here, a new “inverted” integration technique which makes the direct programming possible by connecting the driver n‐channel a‐Si TFT to the OLED cathode is demonstrated. As a result, the pixel drive current increases by an order of magnitude for the same data voltages and the pixel data voltage for turn‐on drops by several volts. In addition, the pixel drive current becomes independent of the OLED characteristics so that OLED aging does not affect the pixel current. Furthermore, the new integration technique is modified to allow substrate rotation during OLED evaporation to improve the pixel yield and uniformity. The new integration technique is important for realizing active‐matrix OLED displays with a‐Si technology and conventional bottom‐anode OLEDs.     

LED backlight system with double‐prism pattern

Abstract— A LED backlight system with a double‐prism pattern for use in mobile phones to achieve thin and high luminance LED backlight systems is proposed. The double‐prism pattern is formed on the light guide of the proposed LED backlight system and simultaneously exhibited two optical functions: shifting of the light from the direction of the guided light toward the radiated light and controlling the directivity of the radiated light. Therefore, using the double‐prism pattern eliminates two prism sheets and a diffusive sheet, which are indispensable optical elements to exhibit the optical function that controls the directivity of light in conventional LED backlight systems. Consequently, the thickness of the proposed LED backlight system is reduced to 0.75 mm compared to that of the conventional system. A luminance of 3115 nits and a full‐width half maximum of 35° for radiated light, which are comparable to conventional LED backlight systems, were obtained.     

An in‐cell capacitive touch sensor integrated in an LTPS WSVGA TFT‐LCD

This paper discusses an In‐cell capacitive touch sensor and its integration in an LTPS TFT‐LCD with 7‐inch screen size and WSVGA resolution. The operation of the newly developed sensor is based on capacitive coupling between user's finger and the detection electrode on the TFT substrate, and is purely capacitive. The sensors and the sensor driver circuits have been integrated in the TFT substrate of the prototype TFT‐LCD using LTPS technology. The prototype having 256x150 sensors shows advantages such as smooth operation with no touch force, high position accuracy, multi‐touch (10 or more), a thin and light LCD module, high display quality, and thus is suitable for various applications such as cell‐phones, smart‐phones, mobile‐PCs, and automotive‐use displays.     

PECVD films for low‐temperature poly‐Si TFT‐LCD applications

Low‐temperature polycrystalline‐silicon (poly‐Si) thin‐film‐transistor (TFT) processes, based on PECVD amorphous‐silicon (a‐Si:H) precursor films and excimer‐laser crystallization, have been developed for application in the fabrication of active‐matrix liquid‐crystal‐displays (AMLCDs). The optimum process for depositing the precursor films has been identified. The relationship between excimer‐laser crystallization and poly‐Si film morphology has also been studied. Using these techniques, poly‐Si TFTs with a mobility of 275 cm²/V‐sec and on/off ratios of 1 × 10⁷ have been fabricated.     

Temperature instability of low‐temperature deposited a‐Si:H TFTs fabricated on plastic substrate

Abstract— Low‐temperature deposited a‐Si:H TFTs have been successfully fabricated on colorless polyimide (CPI) substrate for flexible‐display applications. A serious degradation in threshold voltage was observed after applying external thermal stress. The threshold‐voltage shift saturates after applying several thermal stress cycles. In addition, the TFTs show instability under long periods of thermal stress with fixed temperature. This phenomenon was composed of thermally induced traps and substrate‐expansion‐induced mechanical stress. Finally, the a‐Si:H TFT backplane fabricated on a PI substrate at low temperature has been successfully demonstrated for flexible AMLCDs.     

Full‐color transflective cholesteric LCD with image‐enhanced reflector

Abstract— A full‐color bistable transflective cholesteric liquid‐crystal display (Ch‐LCD) was demonstrated by using an imbedded image‐enhanced reflector (IER) on top of each transmissive subpixel. The RGB colors were achieved by patterning conventional color filters on a black‐and‐white Ch‐LCD. In addition, the IER on top of each transmissive subpixel provides similar paths for the transmissive backlight and the reflected ambient light. A simple transflective Ch‐LCD was demonstrated.