首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 15 毫秒
1.
The Taguchi method was used to obtain the optimum electrodeposition parameters for the synthesis of the CuInSe2 thin film for solar cells. The parameters consist of annealing temperature,current density,CuCl2 concentration,FeCl3 concentration,H2SeO3 concentration,TEA amount,pH value,and deposition time. The experiments were carried out according to an L18(2137) table. An X-ray diffractometer(XRD) and a scanning electron microscope(SEM) were respectively used to analyze the phases and observe the microstruct...  相似文献   

2.
3.
用丝网印刷结合溶胶凝胶法制备了多孔TiO2薄膜,用溶液浸渍法制备了ZnO/TiO2复合薄膜;对薄膜的热处理制度、表面形貌、横断面结构、吸光度等进行了分析;组装电池,测试了电池的光电性能,结果表明:浸渍Zn(Ac)23 h,经过适当的热处理后,可以形成结晶良好,吸光度较好的ZnO/TiO2复合薄膜,电池的开路电压,短路电流以及光电转换效率均得到较大的提高.  相似文献   

4.
用丝网印刷结合溶胶凝胶法制备了多孔TiO2薄膜,用溶液浸渍法制备了ZnO/TiO2复合薄膜;对薄膜的热处理制度、表面形貌、横断面结构、吸光度等进行了分析;组装电池,测试了电池的光电性能,结果表明:浸渍Zn(Ac)23 h,经过适当的热处理后,可以形成结晶良好,吸光度较好的ZnO/TiO2复合薄膜,电池的开路电压,短路电流以及光电转换效率均得到较大的提高。  相似文献   

5.
CulnSe2 (CIS) thin films were prepared by electrodeposition from the de-ionized water solution consisting of CuCl2, InCl3, H2SeO3 and Na-citrate onto Mo/soda-lime glass (SLG) substrates. A thermal processing in Se atmosphere at 450℃ was carried out for the electrodepositied films to improve the stoichiometry. The composition and morphology of selenized CIS thin films were studied using energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM), respectively. X-ray diffraction (XRD) studies show that the annealing in Se atmosphere at 450℃ promotes the structural formation of CIS chalcopyrite structure.  相似文献   

6.
针对NiO薄膜厚度对量子点敏化太阳电池性能的影响,设计了1组对比实验,并首次采用CdTeO_3量子点作为敏化剂敏化NiO光阴极制备p型量子点敏化太阳电池。通过分析发现当丝网印刷层数为2层,NiO薄膜厚度大约为2.5μm时,光阴极的吸收强度和电池的短路电流密度都有较大的提升。最终电池获得了0.018%的光电转换效率,达到了国际文献报道的同等水平,拓宽了p型量子点敏化太阳电池的研究范围。  相似文献   

7.
首先艇电磁场理论分析光学导纳和光的偏振问题,然后讨论光波入射到贮光薄膜上时,光的反射和透射问题,从而得到贮光薄膜所能吸收的太阳辐射能量;最后探讨SrAl2O4:Eu贮光薄膜的贮光原理,并给出该贮光薄膜的发射光谱曲线,证明利用光致发光方法的贮能效率高于利用光电、光热转换方法的贮能效率。  相似文献   

8.
1INTRODUCTION Electrodepositiontechniqueiswidelyusedto preparefilmsandpowdersatlowtemperaturedue tothehighenergydensityaccumulatinginsolutionneartheelectrodesurface.Recently,manymetal oxides,suchasZnO,ZrO2,Bi2O3,WO3,etal,havebeenpreparedbyelectrodepositiontech nique[16].However,sofarthepreparationof SnO2filmoncopperfoilhasnotbeenreportedyet.InordertouseSnO2filmasanodematerialin lithiumionbatteries,SnO2filmwithsmallparticle sizedepositeddirectlyoncopperfoiliswelcome.Becausenoconducti…  相似文献   

9.
溶胶-凝胶法制备纳米TiO2薄膜的研究   总被引:1,自引:0,他引:1  
采用溶胶-凝胶方法制备纳米TiO2薄膜,以钛醇盐为前驱物,不同的螯合剂、溶剂和催化剂为原料,通过改变原料配比及实验条件对纳米TiO2薄膜的制备过程的影响进行探讨,从而取得制备纳米TiO2薄膜的最佳原料配比、工艺过程和控制条件.实验结果表明,当去离子水与钛醇盐摩尔比为2.5,乙醇与钛醇盐摩尔比为18,螯合剂与钛醇盐摩尔比为1.2,pH根据需要取3-5,水解温度25-35℃,热处理温度450℃,能够得到稳定的溶胶镀膜.  相似文献   

10.
The structure and characteristics of CdTe thin filrns are closely dependent on the whole deposition process in close-space sublimation (CSS). The physical mechanism of CSS was analyzed aud the temperature distribution in CSS system was measured, and the influences of the increasing-temperature process and pressure on the preliminary nucleus creation were studied. The resuits indicate : tire samples deposited at different pressures hare a cubical structure of CdTe and the diffraction peaks of CdS and SnO2 : F. As the atmosphere pressure increases, the crystal size of CdTe decreases, the rate of the transparency of the thin film decreases and the absorption side moves towards the short-wave direction. After a 4-minute depositing process with a substrate teraw.rature of 500℃ and a source temperature of 620 ℃, the polycostallinc thin films can be mmade , so the production of high-quality integrated cell with StrO2: F/ CdS/ CdTe/ Au structure is hopeful.  相似文献   

11.
采用硫代硫酸钠、硫酸镉,配以有机酸NTA调节溶液pH值,首次在碱性环境中电沉积制备CdS薄膜,并将其应用到Cu2ZnSnS4(CZTS)薄膜太阳能电池中作为缓冲层.实验探讨了pH值、溶液浓度、沉积电位对薄膜晶体结构、形貌、界面等微观结构以及光学特性的影响、在pH值为9.36、Cd2+浓度为0.025mol/L、沉积电位为-1.7V时,获得了表面均匀致密而无针孔、近化学计量原子比、禁带宽度为2.4eV的CdS薄膜,将其应用于CZTS薄膜太阳能电池中,所制备的缓冲层CdS薄膜展现了与CZTS薄膜良好的匹配性,CZTS/CdS的P—n结质量得到改善.  相似文献   

12.
用溶胶-凝胶法制备了Fe^3+掺杂纳米TiO2薄膜,研究了不同Fe^3+掺杂浓度的TiO2薄膜材料的光学性能、晶体结构和光催化性及三者之间的关系,并对相关机理进行了探讨.研究表明:铁掺杂量的不同使TiO2材料的光学性能、晶胞参数及光催化性等发生变化,其中以Fe^3+掺杂0.3%~0.4%(摩尔分数)时具有最好的光催化性能,此时纳米TiO2薄膜具有锐钛矿结构,可见光透过率大于70%,紫外吸收限为366nm,比未掺杂的红移了6nm.  相似文献   

13.
In this paper, uniform titania (TiO2) films have been formed at 50℃ on silanol SAMs by the liquid-phase deposition (LPD) method at a temperature below 100℃. OTS (Octadecyltrichloro-Silane) selfassembled monolayers (SAMs) on glass wafers were used as substrates for the deposition of titanium dioxide thin films. This functionalized organic surface has shown to be effective for promoting the growth of films from titanic aqueous solutions by the LPD method at a low temperature below 100℃. The crystal phase composition, microstructure and topography of the as-prepared films were characterized by various techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The results indicate that the as-prepared thin films are purely crystallized anatase TiO2 constituted by nanorods after being annealed at 500℃. The pH values, concentration of reactants, and deposition temperatures play important roles in the growth of TiO2 thin films.  相似文献   

14.
CuInSe2 (CIS) thin films were prepared by electrodeposition from the de-ionized water solution consisting of CuCl2, InCl3, H2SeO3 and Na-citrate onto Mo/soda-lime glass (SLG) substrates. A thermal processing in Se atmosphere at 450 ℃ was carried out for the electrodepositied films to improve the stoichiometry. The composition and morphology of selenized CIS thin films were studied using energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM), respectively. X-ray diffraction (XRD) studies show that the annealing in Se atmosphere at 450 ℃ promotes the structural formation of CIS chalcopyrite structure.  相似文献   

15.
基于Taguchi实验设计方法优化PoP的翘曲   总被引:1,自引:0,他引:1  
通过对PoP的翘曲进行优化分析,采用有限元分析方法分析了PoP中FBGA和PBGA的翘曲形变,并利用Taguchi设计和有限元模拟相结合的方法进行优化设计.分析结果表明:PBGA具有较大的翘曲,增加基板厚度和塑封料热膨胀系数,减小芯片大小和厚度可以改善PBGA的翘曲.对比优化前后的翘曲,在25 ℃时翘曲值从53.3 μm降到39.1 μm,260 ℃时翘曲值从-112 μm降到了-67.7 μm.塑封料热膨胀系数和芯片尺寸在优化翘曲中起着重要作用.  相似文献   

16.
A novel process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed. An optimal preparation technology to obtain SnO2 thin films was proposed with current density of 8 mA/cm2, the time of deposition of 120 min, the concentration of tin dichloride of 0.02 mol/L and the concentration of dissociated acid of 0.03 mol/L. The phase identification, microstructure and morphology of the thin films were investigated by thermogravimetric analysis and differential thermal analysis, X-ray diffraction, Fourier transform infrared spectra,scanning electron microscopy and transmission electron microscopy. The as-deposited thin film was composed of SnO2·xH2O was obtained by drying at room temperature. Nanocrystalline SnO2 thin film having tetragonal structure with average grain size in the range of 8 to 20 nm and porous, uniform surface was obtained by heat-treating the as-deposited film at 400 ℃ for 2 h. Electrochemical characterization shows that SnO2 film can deliver a discharge capacity of 798 mAh/g and the SnO2 film with smooth surface and annealed at 400 ℃ for 2 h has better cycle performance than that with rough surface and annealed at 150 ℃ for 10 h.  相似文献   

17.
介绍了在不锈钢衬底和Ni-Cr应变电阻间SiO2薄膜的制做方法,在不宜用热氧化和CVD法制做SiO2膜的情况下,利用该法是行之有效的.探讨了溅射工艺条件对膜附着力和应力的影响,并指出了制备具有较好附着力和较低应力的方法.  相似文献   

18.
1 INTRODUCTIONCuInSe2 based solar cells show their greatpromise with high conversion efficiency in commer cial applications[1]. But thus far the recorded effi ciency approaching 20% was achieved in laboratoryon the cells with small size using co evaporationdeposition technique which would face several chal lenges in volume production for large area solarcell. In order to realize the potential of CuInSe2(CIS) as photovoltaic material, it is important todeve…  相似文献   

19.
采用溶胶-凝胶旋转法制备TiO2多孔薄膜,用X-射线分析仪、扫描电镜、原子力显微镜,紫外-可见分光光度计,检测薄膜析晶分析、表面形貌、吸光度、电池的电性能。结果表明:P25粉体添加量为30%,100℃水热烧结12 h,可以形成结晶良好,吸光度较好的TiO2多孔薄膜。  相似文献   

20.
对在离子辅助沉积(IAD)和常规工艺条件下镀制的TiO2薄膜的应力进行了试验研究,并探讨了利用台阶仪测量镀膜前后基板表面曲率的方法。结果表明,当基板温度低于100 ℃时,在离子辅助沉积工艺条件下镀制的TiO2薄膜的应力略大于在常规工艺条件下镀制的薄膜的应力;随着薄膜厚度的增加,TiO2薄膜应力逐渐减小,从125 nm的392 MPa下降到488 nm的30 MPa;离子源阳极电压对薄膜应力影响较大,在100 V时薄膜应力为164 MPa,当电压升高到190 V时,应力下降到75 MPa。  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号