智能读写器电源管理与接口芯片MC33560 的原理及应用

MC33560是安森美半导体公司为智能卡读／写器应用而设计的电源管理与接口集成电路。它通过与微控制器的接口可以对任意类型的智能卡或存储卡电源进行管理。文中介绍了MC33560的主要特点、引脚功能和工作原理，给出了基于MC33560的智能卡读写器应用电路。     

射频卡读写器设计原理分析

射频卡,又称非接触式IC卡,智能卡.它把计算机技术、射频技术与微电子技术结合到了一起,其小巧实用,性价比高.射频卡读写器是发卡计算机对射频卡进行相应操作的接口设备,其功能类似于计算机的刻录机.以城市一卡通系统中的射频卡读写系统为模型,就射频卡读写器的设计原理和应用进行分析.     

瑞萨与英飞凌合力，为智能卡MCU提供通用API

英飞凌(Infineon)与瑞萨(Renesas)日前宣布，将为其32位智能卡微控制器系列提供通用软件接口。这样的标准软件接口使得卡制造商的专用软件可以在广泛应用于移动通信的多种智能卡IC平台上重新使用，有助于加速新型智能卡应用的开发。     

Finisar收购英飞凌光纤收发器业务

英飞凌科技和瑞萨科技日前宣布，将推出通用智能卡应用可编程接口。该接口使得智能卡制造商的专用软件可以在广泛应用于移动通信的多种智能卡IC平台上重新使用，有助于加速新型智能卡应用的开发。     

接触式智能卡读写器设计研究

在智能卡项目中,智能卡读写器发挥着重要作用,在项目开发过程中,会遇到智能卡读写方面的种种问题。本文就智能卡读写技术问题作一些探讨,所涉及到的程序作者全部在实际系统中编译通过。     

基于低级别读写器协议的无线射频识别中间件系统

无线射频识别（RFID）技术的应用在近年来取得了长足的发展。RFID中间件系统是RFID网络的重要组成部分,位于RFID应用系统和RFID读写器之间,是RFID标签信息的处理中枢。传统的RFID中间件系统对上层的RFID应用系统提供了统一的应用层事件（ALE）接口,但是和RFID读写器之间的连接则采用适配读写器厂商私有接口的方式,不利于快速构建RFID应用系统。基于低级别读写器协议（LLRP）的RFID中间件系统提供了标准的接口来接入不同厂商的读写器,大幅度地提高了构建RFID应用系统的效率。     

改善民生、构建和谐、服务社会,物联网大有作为

物联网在我国发展的重要应用基础,来自于国家金卡工程的推动。我国早在20世纪90年代,就开始了物联网产业的相关研究和应用试点的探索,国家金卡工程非接触式智能卡已广泛用于不停车收费,路桥管理,铁路机车识别管理,以及电子证照身份识别等方面。特别是电信智能卡整合了电子钱包功能推出的移动支付应用,以及手机做为RFID的读写器开展的食品,药品安全管理与贵重物品的识别防伪等,以及遍布30个试点城市的"一卡通"工程应用,形成了一系列利民惠民工程,推动了社会信息化进程,并取得了明显成效。在此基础     

RFID读写器的PS/2接口设计

随着物联网的兴起,RFID技术受到了前所未有的重视。而现在应用于各个频段的RFID读写器,一般都需要与PC机连接才能工作。为了实现控制的目的,必须在计算机上为其安装不同的上位机驱动程序。不能即插即用很大程度上限制了RFID读写器的应用。基于上述考虑,该文利用操作系统内一般都集成有PS/2协议驱动,开发设计了基于PS/2的RFID读写器无驱动模块,实现了读写器即插即用的功能。并且考虑到目前很多计算机都不支持PS/2接口,利用OKE122-U转换芯片将实现的PS/2接口转换为USB接口。该文首先对PS/2接口作了简要介绍,对PS/2协议时序做了详细说明,并给出了硬件连接电路和软件设计过程,最后提供了读写器与主机通信时利用示波器抓取到的信号。     

SIM卡需要遵循的标准

从技术上讲,GSM服务的飞速发展是技术标准和规范的一个成功。技术标准和规范为服务提供了技术保障和发展空间。作为GSM服务系统中的一个重要组成部分,SIM卡也是建立在相关标准之上的。SIM卡是一张智能卡,它首先得符合智能卡的有关标准。在智能卡的相关标准中,最基本的一个标准是ISO7816。该标准对智能卡的物理特性、外观尺寸、电子信号传输协议以及数据交换命令等作了明确细致的定义,这些定义构成了一张智能卡的基本条件。GSM标准中有很多标准是与SIM卡相关的。最重要的一个标准是SIM卡与手机设备之间的接口标准,即GSM11.11。GSM11.11完整地定义了在GSM网络操作过程中SIM卡和手机设备之间的接口,以及SIM卡的内部组织结构。这个规范可以保证不同的厂商提供的卡片与不同的厂商提供的手机设备相互之间的可操作性。因此SIM卡的物理特性、电子特性和传输协议、安全特性、接口之间的功能、相关的指令、应用协议以及GSM操作中所需的文件内容等都在该文件中有完整的定义。如果要在SIM卡上完成STK应用,另一个规范GSM11.14是必不可少的。GSM11.14规范了SIM卡应用工具箱(STK),它也是一个SIM卡与手机设备之间...     

公司资讯

会旭金卡日前,第九届“中国国际智能卡博览会暨RFOD高峰论坛”在北京国际贸易中心隆重开展,参展商华旭金卡股份有限公司所展示的二代证阅读机具及行业应用软件、税控系列、社保系列、智能卡及读写器系列产品,以其贴近应用、安全高效和品类丰富的三大特征得到了与会专家及用户的青睐,在来自中(包括港澳台     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.