用于PDP扫描驱动芯片的低成本VDMOS及其兼容工艺

给出了采用硅外延BCD工艺路线制造的低成本的VDMOS设计,纵向上有效利用17μm厚度的外延层,横向上得到的VDMOS元胞面积为324μm2,工艺上简化为18次光刻,兼容了标准CMOS、双极管和高压p-LDMOS等器件.VDMOS测试管的耐压超过200V,集成于64路170 PDP扫描驱动芯片功率输出部分,通过了LG-model42v6的PDP上联机验证.     

用于PDP扫描驱动的双高压p-LDMOS及其兼容工艺

报道了基于硅外延BCD工艺的高栅源、高漏源电压的功率pMOS的设计.采用1μm厚的场氧化层作为栅氧介质及RESURF原理优化的漏极漂移区,器件面积为80μm×80μm,工艺上简化为18次光刻,兼容标准CMOS、双极管和高压VDMOS.测试管耐压超过200V,集成于64路170V PDP扫描驱动芯片,通过了上机测试.     

用于PDP扫描驱动的双高压p-LDMOS及其兼容工艺

报道了基于硅外延BCD工艺的高栅源、高漏源电压的功率pMOS的设计.采用1μm厚的场氧化层作为栅氧介质及RESURF原理优化的漏极漂移区,器件面积为80μm×80μm,工艺上简化为18次光刻,兼容标准CMOS、双极管和高压VDMOS. 测试管耐压超过200V,集成于64路170V PDP扫描驱动芯片,通过了上机测试.     

一种半绝缘键合SOI新型BCD结构

提出了一种采用半绝缘SOI的新型BCD结构,该结构把高压大电流VDMOS,CMOS和双极器件同时可靠地集成在一起,其特点是集成了垂直导电的VDMOS.这种结构在汽车电子、抗辐射、强电磁脉冲环境等领域有较好的潜在应用.BCD样品芯片垂直导电VDMOS击穿电压为160V,导通电阻为0.3Ω,比导通电阻为26mΩ·cm2;npn,pMOS,nMOS击穿电压分别为50,35,30V;npn管β为120,ft为700MHz.     

一种半绝缘键合SOI新型BCD结构

提出了一种采用半绝缘SOI的新型BCD结构,该结构把高压大电流VDMOS,CMOS和双极器件同时可靠地集成在一起,其特点是集成了垂直导电的VDMOS.这种结构在汽车电子、抗辐射、强电磁脉冲环境等领域有较好的潜在应用.BCD样品芯片垂直导电VDMOS击穿电压为160V,导通电阻为0.3Ω,比导通电阻为26mΩ·cm2;npn,pMOS,nMOS击穿电压分别为50,35,30V;npn管β为120,ft为700MHz.     

VDMOS管的特性及在电子镇流器中的应用

本文主要介绍VDMOS管的制造工艺与结构,并将VDMOS管的特性与双极晶体管作比较,突出了VDMOS管在电子镇流器中作为开关管的优势,对VD－MOS管在电子镇流器中的具体使用条件作了说明。     

特种器件厚外延前后图形转移方法研究

提出了一种特种器件厚外延前后图形的转移方法.通过设计一块带外延前图形层的对位标记和投影光刻机识别标记的掩膜版,解决了厚外延之前图形的精确套准和厚外延之后投影光刻的难题,实现了厚外延前后的套刻精度高于0.5 μm.该方法可广泛应用于带埋层的VDMOS、超结VDMOS、高压互补双极器件,以及高压BCD器件的投影光刻.     

高压VDMOSFET导通电阻的优化设计

以500 V VDMOS为例,首先分析了高压VDMOS导通电阻与电压的关系,重点讨论穿通型VDMOS的外延厚度与器件的耐压和导通电阻的关系。给出对高压VDMOS外延层厚度的优化方案,并基于理论分析在器件仿真设计软件平台上成功完成了耐压500 V、导通电阻0.85Ω的功率VDMOS器件的设计和仿真。     

VDMOS功率器件用硅外延片

1、产品及其简介1973年美国IR公司推出VDMOS结构,将器件耐压、导通电阻和电流处理能力提高到一个新水平。功率VDMOS管是在外延片上制作的,由于一个管芯包括几千个元胞,故要求线条细,光刻精度高。所以对外     

高压功率VDMOS管的设计研制

随着功率电子器件进一步向高压、高频、大电流方向发展,VDMOS晶体管的市场将会越来越广阔。通过综合各种模型,优化外延层厚度和掺杂浓度。设计了高压VDMOS器件的元胞图形以及器件尺寸,并在终端利用新的思路,从而提高了漏源击穿电压,基于理论分析在工艺上成功实现了耐压为500V,导通电流为3A的功率VDMOS器件。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.