以Liq:Rubrene为发光层的白色有机电致发光器件的研制

以蓝色发光材料Liq为主体,以一定的比例掺入黄光染料Rubrene,研制了新型白色有机电致发光器件.调节Rubrene的掺杂比为1.1%时得到近白光器件,色坐标为(0.308,0.347),器件的启亮电压为8V,当外加电压达到25V时,器件发光亮度达3120cd/m2.     

双主体掺杂红色有机电致发光显示器件的研究

利用三源共蒸发技术制作了双主体掺杂红色有机电致发光显示器件,研究了不同掺杂比例下,Alq3∶Rubrene∶DCJTB双主体掺杂系统的红色OLED器件,器件结构为ITO/HIL/NPB/Alq3∶Rubrene∶DCJTB/Alq3/LiF/Al,其中发光层Alq3∶Rubren∶DCJTB是三掺杂发光结构体系。综合研究分析了Alq3与Rubrene的掺杂比例和发光效率、色纯度之间的关系,当Rubrene的掺杂比例达到60%时,器件达到最佳效果;电压9V时,该器件发光亮度达到3580cd/m2,发光效率达到4.58cd/A,功率效率也达到1.60lm/W,相应的色坐标为(0.65,0.35)。     

CdS薄层对有机电致发光器件性能的影响

将光电材料硫化镉(CdS)薄层插入到结构为ITO/NPB/Rubrene/NPB/DPVBi/Alq3/LiF/Al的白光有机发光器件(OLED)的Alq3和LiF之间,研究了CdS对OLED性能的影响。结果表明,0.1nm厚的CdS插入Alq3和LiF之间的器件性能最好。器件电压从7 V变化到14 V时,色度均在白光的中心区域;当电压为7V时,器件的最大电流效率为9.09cd/A;当电压为14V时,器件的最大亮度为16 370cd/m2。不加CdS时,当电压为8V时,器件的最大效率为5.16cd/A;当电压为14V时,最大亮度为6 669cd/m2。加CdS的器件比不加CdS的器件最大效率提高了1.76倍,最大亮度提高了2.42倍。     

利用DPVBi的空穴阻挡和发光特性而制作的白光器件

介绍了结构为:ITO/m-MTDATA(40 nm)/NPB(5 nm)/DPVBi(10～12 nm)/Rubrene(0.5 nm)/DPVBi(20～18 nm)/Alq(50 nm)/LiF(0.5 nm)/Al的白光器件.该器件采用了两个DPVBi层中间夹一个Rubrene的薄层,这种结构充分利用了DPVBi的空穴阻挡特性和发光特性,有力地平衡了来自于DPVBi的蓝光、Alq的绿光和Rubrene的黄光,从而使器件发射性能较好的白光.当第一层的DPVBi和第二层的DPVBi的厚度分别是11 nm和19 nm时,其他层的厚度保持不变,该器件在15 V电压下,最大亮度为11 290 cd/m2 ,对应的效率为1.71 cd/A,色坐标为(0.25,0.27),属于白光发射;在6 V时,其最大效率为3.18 cd/A.     

用于液晶背光源的双层掺杂白光OLED

制备了一种双层掺杂的白光有机电致发光器件(OLED),其中BAlq:TBPe掺杂层发蓝光,Zn(BTZ)2:Rubrene掺杂层发橙色光.器件在驱动电压5 V时就能发出白光,且在驱动电压5～15 V内色坐标变化较小,均在白光色域区,在15 V时亮度达到8 572 cd/m2,在电流密度50 mA/cm2时量子效率最高达到0.9%.对该白光OLED的发光和电学性能以及发光机理进行了深入的研究和探讨,进而制备了应用于液晶显示(LCD)背光源的近白光OLED,有效面积达到3 cm×3 cm,在10 V时平均亮度达到～1 300 cd/m2,发光亮度均匀性为90%,色度均匀性较好,很好地符合了LCD对背光源的要求.     

空穴传输层NPBX厚度对白光OLED性能的影响

讨论了空穴传输层材料NPBX厚度对白光有机电致发光器件(OLED)性能的影响.采用了ITO/2T-NATA/NPBX/DPVBi/Rubrene/DPVBi/Rubrene/Alq3/LiF/Al的多层结构器件.在这种多层结构的器件中,其他材料的厚度保持不变,使NPBX的厚度按10、15、20、25 nm的规律改变.当NPBX厚度为15 am时,器件性能最好.该器件在14 V电压下最大亮度为19 300cd/m2,在7 V的电压下最大效率为5.326 cd/A,色坐标为(0.27,0.33).     

蓝色、橙色混合OLED中电压对色度的影响

以联苯乙烯衍生物(4,4′-bis(2,2′-diphenylvinyl)-1,1′-biphenyl,DPVBi)和红荧烯(5,6,11,12-tetraphenylnaphthacene,Rubrene)分别为蓝色、橙色发射体,通过超薄插入的方法在DPVBi中插入一层Rubrene制备了结构简单的非掺杂型蓝色、橙色混合有机电致发光器件(OLED)。结果表明,器件电压对色度的影响规律随插入位置不同而变。当器件发光中以蓝色为主或以橙色为主时器件色坐标随电压的变化较小,而当器件中蓝色和橙色发射成分较为均衡时色坐标随电压的变化较大。其原因可归于电压对蓝色和橙色发射具有不同的影响。     

电压对有机蓝光器件发光光谱的影响

介绍了结构为ITO/40 nm 4,4′,4″-tris[N,-(3-methylphenyl)-N-phenylamino]tripheny- lamine(m-MTDATA)/5 nm N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′- diamine(NPB)/x nm 4,4-bis(2,2-diphenyl vinyl)-1,1-biphenyl(DPVBi)/y nm 6,11,12,- tetraphenylnaphthacene(Rubrene)/40 nm tris(8-hydroxyquinoline)aluminum(Alq)/0.5 nm LiF/Al的器件,其发光光谱的半峰宽在电压由2 V变为12 V时,由140 nm变为70 nm,器件发光的峰值波长由456 nm变为444nm的规律。半峰宽变窄是由于随着电压的升高,被Ru- brene俘获的电子获得了足够的能量,越过Rubrene层,在DPVBi中与注入的空穴形成激子而复合发光的概率的逐步增加所造成的。峰值波长蓝移是由于激子的形成区域随着电压的增加逐渐由DPVBi层移向NPB层造成的。器件峰值波长的这种变化对器件的色度改善有着很大的影响。     

有机小分子掺杂的聚合物发光二极管电致发光及其发射机制

在新型空穴传输聚合物聚TPD(PTPD)中掺杂电子传输有机小分子荧光染料Rubrene制成薄膜器件.考察了影响聚合物掺杂小分子薄膜器件发光性能的因素.实验表明,通过在器件中掺杂,可以控制器件所发光的颜色.研究了PTPD掺杂Rubrene分子薄膜的电致发光光谱和光致发光光谱.由实验可知.在光致发光中存在从PTPD向Rubrene的能量传递和电荷转移,而电致发光则存在从PTPD向Rubrene的能量传递和Rubrene分子对载流子的俘获.即掺杂器件的发射机制为载流子陷阱和Forster能量转换过程的共同作用.     

有机小分子掺杂的聚合物发光二极管电致发光及其发射机制

在新型空穴传输聚合物聚TPD(PTPD)中掺杂电子传输有机小分子荧光染料Rubrene制成薄膜器件.考察了影响聚合物掺杂小分子薄膜器件发光性能的因素.实验表明,通过在器件中掺杂,可以控制器件所发光的颜色.研究了PTPD掺杂Rubrene分子薄膜的电致发光光谱和光致发光光谱.由实验可知.在光致发光中存在从PTPD向Rubrene的能量传递和电荷转移,而电致发光则存在从PTPD向Rubrene的能量传递和Rubrene分子对载流子的俘获.即掺杂器件的发射机制为载流子陷阱和Forster能量转换过程的共同作用.     

掺杂发光体对红色有机电致发光的影响(英文)

为了研究掺杂发光体对红色有机电致发光二极管的增强效果,将DCJTB和C545T分别掺入Alq3,制备了双发光层的OLED器件,器件结构为玻璃/ITO/4 ,4′,4″-tris[2-naphthylphenyl-1-phenylamino]triphenyla-mine (2T-NATA)/N,N′-di (naphthalene-1-yl)-N,N′-diphenyl benzidine ( NPB)/tris-(8-hydroxyquinoline)aluminum ( Alq3):4-(dicyanomethylene)-2-tert-butyl-6 (1 ,7 ,7 ,7-tetramethyljulolidin-4-yl-vinyl)-4 H-pyran(DCJTB)/Alq3:10-(2-benzothiazolyl)-2 ,3 ,6 ,7-tetrahydro-1 ,1 ,7 ,7 ,-tetramethyl-1 H,5 H,11 H-(1)-benzopy-ropyrano-(6 ,7-8-i ,j)quinolizin-11-one (C545T)/Alq3/LiF/Al ,并且将其与单发光层的红、绿光器件相比较。实验结果表明,与单发光层的红光器件相比,加入绿光发光层的红光器件的发光特性被增强了,这种双发光层器件的最优掺杂比例为[Alq3:(2 .5 %)C545T]/[ Alq3:(1 .5 %)DCJTB](质量分数) ,在电压为11 .5 V时得到最大发光亮度为6 830 cd/ m2,在11 V电压时能得到4 .59 cd/A的最大电流效率。但是,这种方法的缺点是削弱了红光的色纯度。     

Effect of Heat Treatment on Luminescent Properties of White Organic Light Emitting Device

The white organic light emitting device (OLED) with single-structure using a polymer blend as the light emitting layer is fabricated. Heat treatment is used to control the ratio between the intensities of main electroluminescent spectral peaks. The electroluminescent spectrum of our device is quite similar to that of white inorganic LED produced by Nichia Corporation after being annealed, and its turn-on voltage can be decreased by 1V.     

Electroluminescent Devices Using a Polymer of Regulated Conjugation Length and a Polymer Blend

A blue light emitting device has been successfully fabricated using a polymer with regulated conjugation length containing trimethylsilyl substituted phenylenevinylene units. Electroluminescence from the device has an emission maximum at 470 nm. The device shows typical diode characteristics with operating voltage of 20 V and the light becomes visible at a current density of less than 0.5 mA/cm². The electroluminescence spectrum is virtually identical with the photoluminescence spectrum, indicating that the radiation mechanisms are the same for both. A light emitting device using the blend of a large band gap polymer and a small band gap polymer was also fabricated. Light emission from the small band gap polymer shows much improved quantum efficiency, but there is no light emission from the large band gap polymer. Quantum efficiency of the blend increases up to about two orders of magnitude greater than that of the small band gap polymer with increasing proportion of the large band gap polymer. The improvement in quantum efficiency is interpreted in terms of exciton transfer and the hole blocking behaviour of the large band gap polymer. Finally, we have fabricated a patterned flexible light emitting device using the high quantum efficiency polymer blend system.     

基于标准CMOS工艺的Si基光发射器件

基于反偏雪崩击穿的发光原理,按照Chartered 0.35μm标准CMOS工艺要求,设计并制作了一种Si基光发射器件。在室温下对器件特性进行了初步测试,正向导通电压为0.75V,反向击穿电压为8.4V,能够在一个较宽的电压范围(8.4～12V)内稳定工作。总结了工艺对器件电学特性的影响,并将该器件结构与Snyman等人研究的器件结构进行了比较分析。该器件较强的边缘发光在平面结构的Si基片上集成光互联系统中将会有一定的应用价值。     

MoO3作空穴注入层的绿光有机电致发光器件制备及其性能研究

用真空热蒸镀的方法制备了绿光有机电致发光器件,并对其工艺流程进行了详细的描述。器件结构为ITO/MoO3(xnm)/N,N′-diphenyl-N,N′-bis(1-naphthyl)-(1,18-biphenyl)-4,4-diamine(NPB)(40nm)/tris(8-hydroxyquinoline)aluminum(Alq3)(60nm)/LiF(1nm)/Al(150nm),其中x=0,5nm。实验中,对ITO基片进行氧等离子体表面处理,能够有效减小ITO表面的接触角。通过对器件的光电性能测试,研究了MoO3作空穴注入层对有机电致发光器件性能的影响。实验结果表明,空穴注入层MoO3的最高占据分子轨道(HOMO)能级较好的与ITO功函数匹配,降低了空穴注入势垒,提高了器件的发光亮度和效率。当外加电压小于10V时,器件的电流密度随外加电压的增加而增加,但变化不明显;当外加电压大于10V时,器件的电流密度明显增强,发光色度几乎不随驱动电压的改变而改变,色坐标稳定在(0.36,0.55)附近。     

Low voltage operating organic light emitting transistors with efficient charge blocking layer

Charge injection/blocking layers play important roles in the performances of organic electronic devices. Their incorporation into organic light emitting transistors has been limitted, due to generally high operating voltages (above 60 V) of these devices. In this work, two hole blocking molecules are integrated into tris-(8-hydroxyquinoline) aluminum (Alq₃) based light emitting transistors under operating voltage as low as 5 V. The effects of hole blocking and electron injection are decoupled through the differences in the energy levels. Significantly improved optical performance is achieved with the molecule of suitable energy level for electron injection. Surprisingly, a decreased performance is observed in the case of another hole blocking molecule evidencing that charge injection overweighs charge blocking in this device architecture.     

发光性能稳定的磷光与荧光复合型白光OLED

使用荧光染料TBPe和Ir(ppy)_2acac 、R-4B两种光染料,采用蓝/红绿双发光层的结构,并结合TPBi对空穴的有效限制作用 ,制备了结构为ITO/MoO₃(X nm)/ADN:(2%)TBPe(30 nm)/CBP:Ir(ppy)_2acac(14%):R-4B(2%)(5nm)/TPBi(10 nm)/Alq₃(30nm)/LiF(1nm )/Al(100nm)的磷光与荧光复合的白光OLED,其中,MoO₃的厚 分别为0、15、20、30和40nm,通过改变MoO₃的厚度调控载流子的注入能力,使用空穴阻挡层提高光效; 通过测量其电压、电流、亮度、色坐标和电致发光(EL)光谱等参数,研究不同厚度的MoO ₃对器件发光性能的影响。结果表明,在MoO₃厚为20nm的情况下,器件的效率滚降 最为平缓。在电压分别 为8、9、10、11、12和13V时,器件的色坐标分别为 (0.31,0.33)、(0.30,0.33)、(0.29,0.33)、(0.29,0.33)、(0.29,0.33)和(0.29, 0.33),具有较高的稳定性,原因为采用 蓝/红绿双发光层结构更有利于蓝光的 出射,且使用ADN主体材料掺杂蓝色荧光染料TBPe作为蓝光发光层降低三重态-三重态 湮灭几率。 研究还发现,在电压为11V、器件的亮度为9744cd/m²和电流密度为11.50mA/cm²时,最大器件的电流效率为 7.0cd/A。     

采用DCJTB作为色彩转换膜实现白色有机电致发光的研究

采用橙红色荧光材料4-(二氰基亚甲基)-2-叔丁基-6-(1,1,7,7-四甲基久罗尼定基-4-乙烯基)-4H-吡喃(DCJTB)作为色彩转换材料,结合蓝色有机电致发光器件实现了较好的白光发射。分别通过真空蒸镀和旋转涂覆两种不同的工艺进行色彩转换膜(CCL)的制备,发现不同的转换膜制备工艺对白光器件的性能影响不明显。当采用浓度比例为20mg/ml的DCJTB溶液通过旋涂方法制备CCL后,所得到白光器件的起亮电压为3.4V,在12V时达到最大亮度为1 939cd/m2,且该器件的最大电流效率为1.34cd/A(在电流密度为3.23mA/cm2时)。当驱动电压从5V增加到9V时,该白光器件的色坐标仅从(0.36,0.33)变化到(0.33,0.31)。表现出良好的色纯度和色稳定性。     

White organic light emitting devices with a color conversion layer

A white organic light emitting device (WOLED) combining the blue organic light emitting device with a red color conversion layer (CCL) is reported, which includes a fluorescent material N-(4-((E)-2-(6-((E)-4-(diphenylamino) styryl)naphtha len-2-yl)vinyl) phenyl)-N-phenylbenzenamine (N-BDAVBi) doped into 4,4′-N,N′-dicarbazole-biphenyl (CBP) as the blue light emitting layer, and the poly (2-methoxy-5-(2′-ethylhexoxy)-1,4-phenylene vinylene (MEH-PPV) as a red CCL. By optimizing the concentration of MEH-PPV in the CCL, a good white light emission is obtained, which shows that the stable CIE coordinates of (0.33, 0.34) will have a slight change when the driving voltage is increased from 6 to 11 V. The maximum brightness and current efficiency of the optimized device are 11294 cd/m² and 6.4 cd/A, respectively.     

Silicon light emitting device in CMOS technology

A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm.