氢氟酸腐蚀对可加工陶瓷表面耐电的影响

为了解决真空中的沿面闪络现象制约真空绝缘系统的整体性能的问题,提出将一种具有优良的可加工性能及表面耐电性能的微晶玻璃(又称可加工陶瓷)引入真空绝缘领域,研究了氢氟酸的体积分数φ(HF)不同时处理可加工陶瓷样品前后其电学特性的变化。利用X射线衍射(XRD)技术,定性分析了φ(HF)不同时处理样品后表面的玻璃相的体积分数φ(GP);采用光电结合的方法,测量了φ(HF)不同时处理样品在真空高压脉冲下的沿面闪络特性。φ(HF)不同时处理可加工陶瓷后,其表面φ(GP)和真空表面耐电性能均改变;φ(HF)越高,则样品表面的φ(GP)越低,真空耐电特性越好。通过氢氟酸处理可以腐蚀掉样品表面的玻璃相,从而改变了脱陷电子的"爬电高度",进而影响了可加工陶瓷的真空表面耐电性能。     

表面离子交换对可加工陶瓷真空沿面耐电特性的影响

真空中沿固体绝缘材料表面的闪络电压通常远低于绝缘材料自身及相同长度真空间隙的击穿电压,长期以来这一现象极大地限制了高压电真空设备的发展进程。鉴于此,将一种具有优良的可加工性能及表面耐电特性的可加工陶瓷引入真空绝缘领域,进而通过离子交换的方式改变可加工陶瓷的表面元素分布,以降低其表面的二次电子发射系数。并采用Cu+置换可加工陶瓷表面的Na+,考察了经不同离子交换时间后试品的表面形貌、介电特性及沿面耐电特性。结果发现:Cu+离子交换Na+能够提高可加工陶瓷的沿面闪络电压,随离子交换时间延长试品的沿面闪络电压有提高的趋势,并且出现闪络电压最高点,当离子交换时间过长时,闪络电压会有所降低。这为通过表面改性无机材料提高其表面耐电强度提供了一种新的方法。     

纳秒脉冲下圆台形可加工陶瓷真空沿面耐电特性测试与仿真分析

真空中绝缘子表面的沿面闪络现象极大地限制了电真空设备的发展进程。为此,将一种具有优良可加工性能和良好耐电性能的可加工陶瓷引入真空绝缘领域,结合工程实际中经常采用圆台形绝缘结构,将其加工成不同角度的圆台形绝缘子,在ns脉冲电压下对试品进行了真空沿面耐电性能的测试,并分析了锥角对阴极三结合点处电场、表面电荷分布和初始电子运...     

不同掺杂对可加工陶瓷二次电子发射及沿面闪络特性的影响

固体绝缘材料的表面特性极大地影响着其真空沿面闪络特性,长期以来这一现象极大地制约着真空绝缘系统的整体性能,限制了高压电真空设备的发展进程.本文针对一种具有良好加工性能及表面耐电特性的低熔点可加工微晶玻璃陶瓷引入真空绝缘的背景,在不明显降低可加工性能的前提下,通过在可加工陶瓷原材料内掺杂不同的低二次电子发射系数金属氧化物...     

表面粗糙处理对可加工陶瓷冲击闪络特性研究

长期以来,复合绝缘系统的耐电性能受制于其绝缘材料表面的沿面闪络,尤以真空闪络最为严重,大大限制了电真空器件的整体性能。以一种具有良好耐电性能的低熔点可加工陶瓷引入真空绝缘,通过不同砂纸打磨研究不同表面粗糙度对其闪络性能的影响。结果发现,在冲击电压作用下,随着材料表面粗糙程度的增加其闪络电压有上升的趋势,打磨方向垂直于电极连线方向的效果要优于打磨方向平行于电极连线方向。     

表面处理对可加工陶瓷真空沿面闪络特性的影响

长期以来真空沿面闪络现象严重制约着电真空绝缘系统的整体性能,限制了高压电真空设备的发展,而绝缘材料的表面状况对其沿面耐电特性有极大影响。本文针对一种具有良好加工性能及表面耐电特性的低熔点可加工微晶玻璃陶瓷引入真空绝缘的背景,通过使用不同的砂纸对可加工陶瓷试品的表面进行打磨处理,使用超深度表面形态测定激光显微镜测定不同处理方式下试品表面形貌的变化,并对不同处理情况下的试品的真空沿面闪络特性进行测定。结果发现:使用砂纸打磨的方法能够有效改变试品的表面粗糙度,粗糙度变化规律明显,而随着试品表面粗糙度的增大,试品的真空沿面闪络电压提高。     

玻璃陶瓷表面浅陷阱分布对其真空沿面闪络特性的影响

长期以来沿面闪络现象一直制约着真空绝缘系统的整体性能,极大地限制了高压电真空设备的发展进程。针对一种具有良好加工性能及表面耐电特性的低熔点可加工微晶玻璃陶瓷引入真空绝缘的背景,研究了不同制备工艺的可加工陶瓷试品在进行表面氢氟酸处理前后其电学特性的变化。利用表面电位衰减法测量了材料表层陷阱分布,分析了表面酸处理对其陷阱分布的影响;采用光电结合的方法,测量了不同表面处理的材料在真空中的表面耐电情况,分析了材料表面陷阱的密度和能级对闪络特性的影响。发现玻璃陶瓷材料表面存在的玻璃相结构是造成存在大量浅陷阱的重要原因,而浅陷阱对沿面闪络特性造成不利影响。得知通过氢氟酸处理可以腐蚀掉材料表面的玻璃相结构,从而降低浅陷阱密度,进而明显提高材料表面闪络的稳定性和降低分散性。     

可充碱性MH/MnO_2电池的制备

研制了一种新型MH/MnO_2可充电池,正极MnO_2中加入一定量添加剂及耐过充催化剂,以缓解正、负极起始充放电态不匹配,同时提高电池电位。电性能测试结果表明,此种电池性能稳定,自放电小,充放电性能优良。     

多层均压结构可加工陶瓷真空沿面耐电特性的实验与仿真研究

真空中沿固体绝缘材料表面的闪络电压通常远低于绝缘材料自身及相同长度真空间隙的击穿电压,这一现象极大地限制了高压真空设备的发展。将一种具有优良可加工性能和良好耐电性能的可加工陶瓷引入真空绝缘领域,结合工程实际中的绝缘堆结构,加工制作了多层均压结构;在纳秒脉冲电压下对不同多层均压结构的样品进行了真空沿面耐电性能的测试,并分析了不同均压结构对样品沿面电场和电子运动轨迹的影响。结果表明：多层均压结构样品的耐压强度要高于圆柱形样品,且其闪络场强随着绝缘层与金属层比例的增大有增大的趋势,径向电场随该比例的增大而减小;使用圆台形绝缘子组成多层均压绝缘结构时,电子难以与样品表面发生碰撞,闪络的稳定性得到了一定程度的提高。     

氧化铝陶瓷绝缘子真空沿面闪络过程中的陷阱机制

采用热刺激电流法(TSC)研究了不同烧结温度和掺有不同添加剂的氧化铝陶瓷的陷阱能级密度分布特性以及在负脉冲电压作用下的真空中表面带电和沿面闪络特性。研究发现，氧化铝陶瓷的陷阱分布与其真空中的表面带电和沿面闪络特性之间存在一定的内在联系，即材料中的陷阱密度越大，其表面电荷密度越高，且沿面闪络电压越低。上述结果表明，氧化铝陶瓷在真空沿面闪络过程中，除了电介质的二次电子发射作用外，载流子的入陷、脱陷机制也起着相当重要的作用。     

SF6气体绝缘高压直流设备内部绝缘子用新型陶瓷材料特性探索

陶瓷材料具有高导热性、高机械强度,在SF6绝缘高压直流电气设备内具有一定应用潜力。该文探索了一种新型陶瓷材料的电导特性、表面电荷特性、机械特性及耐酸蚀性,并与工程用环氧树脂/Al2O3复合材料进行了对比,研究发现:室温、低场下陶瓷体积电阻率为4.5×1015W×m,且其温度依赖性较环氧复合材料低;正、负极性直流电压下,陶瓷表面均积聚正极性表面电荷,且最大电荷密度仅为0.21pC/mm2,较环氧复合材料低54%;此外,陶瓷材料表现出了较优的机械与耐酸蚀特性。基于材料物化结构的电导机理模型及温度梯度下支柱绝缘子的电场计算结果,进一步验证了陶瓷所具备的优异特性与巨大潜力。研究成果为提升SF6绝缘高压直流电气设备沿面绝缘性能提供了一种新的思路,为新型陶瓷材料的工程应用提供了理论基础。     

真空中固体绝缘沿面闪络现象的研究进展

针对长期以来高电场下复合绝缘系统的耐电性能受绝缘材料的沿面闪络现象所限制,严重制约了很多电气电子系统的整体性能的现状,迫切需要深入研究真空中绝缘子沿面闪络现象,为此,综述了国内外相关研究现状和进展,认为此现象是一种发生在高电场下的复杂界面(电极与材料的交界面)和表面(材料的表面)的物理现象。闪络过程在本质上反映出高电场下的电荷行为,由体内(材料的表层内)和体外(材料的表面及表面以上)2过程支配。需综合考虑绝缘材料的介电常数、电阻率、二次电子发射特性、表面陷阱分布等影响因素,进而提出表征和改善真空中沿面闪络特性的综合评价体系,最终达到认识新的物理现象并将之有效调控的目的。     

Surface charges on alumina in vacuum with varying surface roughness and electric field distribution

We investigated the charging characteristics of alumina in vacuum with varying surface roughness, and the electric field distribution. The charging on the alumina surface in vacuum is, in general, strongly influenced by field electron emission (FEE) and secondary electron emission avalanche (SEEA). We varied the surface roughness and the electric field distribution on the alumina surface in order to control the FEE and the SEEA. Under these conditions, we measured the 2-dimensional distribution of surface charging potential on the alumina surface. From the measurement results, we quantitatively discussed charge polarity and charge density on the surface for various types of electric field distributions. Finally, we successfully propose a concept of a charging control technique on the alumina insulator in vacuum for the improvement of electrical insulation performance on the alumina surface.     

Insulation characteristics of vacuum interrupter for a new 72/84 kVC-GIS

This paper describes insulation technology for 72/84 kV vacuum interrupter for a new cubicle-type gas insulated switchgear (CGIS). The insulation performance has been increased significantly by a multi-gap shield configuration around the ceramic surface, which resulted in a 40% volume reduction of the vacuum interrupter. The CGIS housing the vacuum interrupter also reduced by 40% in volume. In the paper, the authors describe the basic characteristics on surface insulation and the area effect on surface insulation and their application to an new 72/84 kV CGIS     

Charging characteristics and electric field distribution on alumina as affected by triple junctions in vacuum

This paper describes the dependence of the charging characteristics on the electric field distribution on the alumina (Al/sub 2/O/sub 3/) surface as affected by the triple junction in vacuum. For HV electrical insulation design of vacuum interrupter, surface flashover in vacuum is very important problem to be solved. Attention should be paid to the fact that the insulation characteristics on the dielectric surface are strongly influenced by field emission of electrons from the triple junction and the accumulated charges on the dielectric surface. In order to clarify the charging mechanism, we measured the charging characteristics for various types of triple junctions. In particular, we focused on the influence of the electric field distribution along the solid dielectrics and near the cathode triple junction (CTJ) on the charging characteristics. The results confirmed that the electric field distribution strongly affected the 2-dimensional (2D) distribution of the surface charge on the dielectric sample. Consequently, it was found that positive charging was generated on alumina, when the incident angle of the electric line of force on the alumina surface became >60/spl deg/.     

Condensed metal vapor on alumina ceramic in vacuum interrupters

Investigations have been carried out on the dielectric performance of the ceramic (high-purity alumina, Al/sub 2/O/sub 3/) surface in vacuum interrupters after switching. In order to examine the influence of the shielding on the protection of the ceramic surface against metal vapor condensation different types of vacuum interrupters (VIs) have been tested: VIs with and without shielding. Additionally, two contact materials CuCr: 75:25 wt% and WCAg: 56:4:40 wt% have been investigated to compare the adhesion of different metal vapors to alumina ceramic surfaces. After having performed a HV conditioning of the VIs, dc arcs with arbitrary arcing times were triggered between the contacts simulating the generation of metal vapor during high current interruption and load break switching. Between the arcing tests the insulation levels of all VIs have been tested by means of HV ac source. Afterwards the VIs were opened and the microstructure of the metallic condensate on the inner ceramic surface was analyzed by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). The integral chemical composition of the metallic film was investigated by inductive coupled plasma (ICP).     

The relation of trap distribution of alumina with surface flashover performance in vacuum

Alumina ceramic samples prepared under different sintering temperatures and varied additives were measured to indicate the trap density and trap energy located in alumina materials by using thermally stimulated current (TSC). The surface charges on alumina in vacuum after applying a negative pulse voltage (0.7/4 /spl mu/s), and flashover performances of the materials in vacuum also were measured. We found that the trap distribution in alumina has a correlation with surface charges and flashover performances in vacuum. It is shown that the higher is the trap density in the material, the higher is the surface charge density, and the lower is the flashover voltage on alumina surface. It is believed that the trapping and de-trapping mechanisms of carriers could play an important role during the development of the discharge processes, together with the secondary electron emission mechanism.