Ca2Si电子结构和光学性质的研究

采用第一性原理赝势平面波方法系统的计算了Ca2Si电子结构和光学性质，其中包括能带、态密度、介电函数、复折射率、吸收系数、光电导率和能量损失函数。计算结果显示Ca2Si是典型的半导体，正交相结构有一个直接的带隙，并且光学性质显示出各向异性。Ca2Si立方相的计算结果也显示是直接带隙半导体，并且有很高的振子强度。从能带和态密度的计算结果判断出它们的光学性质主要由Si的3p态电子向Ca的3d态的带间跃迁所决定。     

Mg2Si电子结构及光学性质的研究

采用基于第一性原理的赝势平面波方法系统地计算了Mg2Si基态的电子结构、态密度和光学性质。计算结果表明Mg2Si属于间接带隙半导体，禁带宽度为0．2994eV；其价带主要由Si的3p以及Mg的3s、3p态电子构成，导带主要由Mg的3s、3p以及Si的3p态电子构成；静态介电常数ε1（0）=18．89；折射率n0=4．3460；吸收系数最大峰值为356474．5cm^-1；并利用计算的能带结构和态密度分析了Mg2Si的介电函数、折射率、反射率、吸收系数、光电导率和能量损失函数的计算结果，为Mg2Si的设计与应用提供了理论依据。     

CrSi2能带结构和光学性质的第一性原理研究

采用基于第一性原理的密度泛函理论（DFT）赝势平面波方法，对CrSi2的能带结构、态密度和光学性质进行了理论计算，能带结构计算表明CrSi2属于一种间接带隙半导体，禁带宽度为0．353eV,其能态密度主要由Cr的3d层电子和Si的3p层电子的能态密度决定；计算了CrSi2的介电函数、反射率、折射率及吸收系数等。经比较，计算结果与已有的实验数据符合较好。     

第一性原理研究InP的能带结构与光学性能

采用基于局域密度近似的第一性原理方法计算了InP的能带结构和电子态密度,并对InP晶体的电荷分布进行了Mulliken布局分析.计算表明InP是直接带隙半导体材料,其价带主要由In的5s以及P的3s、3p态电子构成,导带主要由P的3p以及In的5s、5p态电子构成;P原子与In原子的电子重叠布局数达2.30,表明In-P键的共价性较强而离子性较弱.利用Kramers-Kronig色散关系对InP的介电函数、能量损失谱、折射率以及吸收系数等进行了计算,计算结果与实验值基本一致.此外,根据计算的能带结构与态密度分析了InP电子结构与光学性质的内在联系,解释了InP材料光学性能的微观机制.     

OsSi2电子结构及介电性能的第一性原理研究

采用基于密度泛函理论的第一性原理,研究了硅基异质外延的OsSi_2的电子结构和介电性能。结果表明,在1.010nm≤a≤1.030nm范围内,OsSi_2始终为间接带隙的能带结构,且带隙值随晶格常数a的增大而逐渐减小;当晶格常数a为1.020nm时,体系处于稳定平衡态,此时OsSi_2具有0.625eV的间接带隙能量值;OsSi_2的价带主要由Os的5d、5p和Si的3s、3p态电子构成,导带主要由Si的3s、3p和Os的5d、6s态电子构成;OsSi_2在外延稳定平衡态及其附近的介电函数实部和虚部变化趋近一致,与块体OsSi_2相比,OsSi_2在外延稳定平衡态下的介电函数曲线相对往低能区飘移,OsSi_2的介电峰减少且介电峰强度明显增强。     

（001）应变对正交相Ca2P0.25Si0.75能带结构及光学性质的影响

为了研究(001)应变对正交相Ca2P0.25Si0.75能带结构及光学性质的影响,采用第一性原理贋势平面波方法对(001)应变下正交相Ca2P0.25Si0.75的能带结构及光学性质进行了模拟计算.计算结果表明:晶格(001)面发生100%~116%张应变时,带隙随着应变增加而减小;在晶格发生88%~100%压应变时,带隙随着张应变的增加而增加;84%~88%压应变时,带隙随着压应变的增加而减小.当施加应变后光学性质发生显著的变化:随着压应变的增加,静态介电常数、折射率逐渐减小,张应变则增大.施加压应变反射向高能方向偏移,施加张应变反射向低能方向偏移,但施加应变对反射区域的影响不显著.施压应变吸收谱、光电导率的变化与介电函数和折射率相反.综上所述,(001)应变改变了Ca2P0.25Si0.75的电子结构和光学常数,是调节Ca2P0.25Si0.75光电传输性能的有效手段.     

γ-B28光学性质的第一性原理研究

利用基于密度泛函第一性原理的GGA方法,计算研究了硼的高压相γ-B28的能带结构、态密度、分态密度和光学性质.计算结果表明,γ-B28具有半导体能带结构的特征,其带隙达1.619eV,且整个带结构由杂化的硼2p态和2s态组成,且2p态占主导地位.γ-B28的静态介电常数为11.0733,静态的折射率为3.328,介电函数虚部的吸收边位于1.7eV左右,同时,在2.693eV和5.232eV处有2个明显的特征峰.γ-B28的反射系数在0～16eV范围内随着能量的升高而逐渐增大,但在19.4eV时反射系数急剧下降,而吸收系数的数量级达105cm-1,其电子能量损失谱(EELS)的共振峰在19.4eV处,与反射系数的陡降相对应.     

La2O2S电子结构及光学性质的第一原理研究

基于密度泛函理论的第一原理方法研究了La2O2S的电子结构及光学性质.能带结构分析表明:L2O2S是一种间接带隙的半导体材料,价带顶和导带底分别位于A点和K点.对带隙剪刀修正后,也通过第一原理方法研究了La2O2S的光学性质.计算并分析了La2O2S介电函数的虚部、实部以及由它们所派生的光学常数,即折射率、消光系数、反射率、吸收系数和透光率等.     

Au-N共掺杂ZnO电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势法,结合广义梯度近似(GGA)研究了Au、N共掺杂纤锌矿ZnO的能带结构、电子态密度,以及复介电函数、光学吸收等光学性质,并与本征ZnO和N掺杂ZnO情况进行了对比.计算结果表明Au、N共掺杂ZnO仍是直接带隙半导体材料,掺杂后ZnO的带隙收缩,价带展宽.在价带顶电子密度分布较N掺杂ZnO情况的局域性减弱,更有利于获得p型ZnO.与未掺杂ZnO相比,介电函数和吸收系数在可见和紫外区域得到显著增强.     

β-CaSiO3晶体的电子结构及光学性质

基于第一性原理的平面波赝势方法(PWP)的局域密度近似(LDA)/广义梯度近似(GGA)计算了β-Ca-SiO3的几何结构、能带结构、态密度和光学性质。其晶胞参数优化结果与实验相比,LDA/GGA的相对误差为-3.62%/1.91%。对优化后的β-CaSiO3晶体进行能带结构分析表明,β-CaSiO3晶体为间接带隙结构,禁带宽度Eg(LDA)=5.53eV,Eg(GGA)=5.18eV。对态密度图及Mulliken电荷分布的分析表明,Ca的d轨道有电子分布,即Ca的s、p、d轨道均参与了成键。β-CaSiO3晶体中Ca与SiO3基团之间形成的化学键主要是离子键,而Si与O之间的化学键是共价键。     

Ab initio study of the electronic and optical properties of sillimanite (Al2SiO5) crystal

Ab initio calculations based on the density functional theory (DFT) are used to investigate the electronic and optical properties of sillimanite. The geometrical parameters of the unit cell, which contain 32 atoms, have been fully optimized and are in good agreement with the experimental data. The electronic structure shows that sillimanite has an indirect band gap of 5.18 eV. The complex dielectric function and optical constants, such as extinction coefficient, refractive index, reflectivity and energy-loss spectrum, are calculated. The optical properties of sillimanite are discussed based on the band structure calculations. It is shown that the O-2p states and Al-3s, Si-3s states play the major role in optical transitions as initial and final states, respectively.     

First-principles study of electronic and optical properties of cubic perovskite CsSrF3

We present first principles calculations of the electronic, structural and optical properties of the cubic perovskite CsSrF₃ by using the full potential linearized augmented plane wave (FP-LAPW) plus local orbitals method with generalized gradient approximation (GGA) in the frame work of density functional theory. The calculated lattice constant is in a good agreement with the experimental result. The electronic band structure shows that the fundamental band gap is wide and direct at ?? point. The contribution of the different bands was analyzed from the total and partial density of states curves. The charge density plots show strong ionic bonding in Cs-F, ionic and weak covalent bonding between Sr and F. The calculated optical spectra viz., the dielectric function, optical reflectivity, absorption coefficient, real part of optical conductivity, refractive index, extinction coefficient and electron energy loss, are presented for the energy range of 0?C30 eV.     

FP-LAPW calculations of structural, electronic, and optical properties of alkali metal tellurides: M2Te [M: Li, Na, K and Rb]

Structural, electronic, and optical properties of alkali metal tellurides M₂Te [M: Li, Na, K, and Rb] are investigated in the framework of density functional theory within generalized gradient approximation. The calculated structural parameters are in excellent agreement with the experimental data. The electronic band structure calculations show that tellurides of Li, K, and Rb have an indirect fundamental energy band gap, whereas Na₂Te has a direct fundamental energy band gap. To explicate the contribution of anion and cation states to the electronic band structure, the electronic density of states for these compounds has been analyzed. Optical properties such as complex dielectric function, absorption coefficient, refractive index, extinction coefficient, and reflectivity are reported for a wide range of photon energy and are discussed on the basis of corresponding electronic band structure. Furthermore, the electron energy-loss functions for M₂Te compounds are also predicted. In order to validate the performance of the ab initio calculation reported herein, we systematically study the electronic and optical properties of wide band gap M₂Te compounds and compare them with available theoretical and experimental data of M₂O, M₂S, and M₂Se compounds.     

以第一性原理研究立方相CeO2的弹性、电子结构和光学性质

运用基于密度泛函理论(DFT)框架下的超软赝势平面波(USPP)方法,计算了立方相CeO2的几何结构、弹性性质、电子结构和光学性质,并采用HSE06杂化泛函矫正了带隙.所得晶格参数及体模量与先前文献报道数据基本吻合.计算出了二阶弹性常数及德拜温度值,并给出了能带结构、态密度、差分电荷密度的分布情况.最后,为了阐明CeO2的光学跃迁机制,计算并分析了其复介电常数、折射率、吸附光谱、反射光谱等光学性质.     

Theoretical Investigations of Properties of New Half-Heusler Compounds NiFeZ (Z = Si,Ge)

The half-Heusler alloys NiFeZ (Z = Si, Ge) are investigated theoretically in the general framework of Density Functional Theory (DFT). We have calculated structural, mechanical, elastic, electronic, magnetic, and optical properties using WIEN2k simulation package. To incorporate the electronic exchange-correlation energy we have used the GGA+U approximation. Both the compounds are found structurally stable, however, elastic properties show that NiFeSi is ductile while NiFeGe is brittle. Electronically, the compounds are found to be half-metals with small band gaps in the spin-down channels whereas spin-up channels are conducting. The total magnetic moments for both the compounds are ≈ 2μ _B. Optical properties including dielectric function, refractive index, extinction coefficient, reflectivity, conductivity, and absorption coefficient are also calculated and analyzed.     

First-principles study of structural,elastic, electronic and optical properties of orthorhombic NaAlF4

We have performed the ab initio total energy calculations using the plane-wave ultrasoft pseudopotential technique based on the first-principles density-functional theory (DFT) to study the structural parameters, elastic, electronic, chemical bonding and optical properties of orthorhombic NaAlF₄. The calculated lattice parameters are in good agreement with experimental work. The bulk, shear and Young’s modulus, Poisson’s coefficient, compressibility and Lamé’s constants are firstly obtained using Voigt–Reuss–Hill method and the Debye temperature is estimated using Debye-Grüneisen model. Band structure shows a direct band gap at Γ point. Density of states and charge density have been studied, which show the bonding between Na and F is mainly ionic as well as that between Al and F. In order to clarify the mechanism of optical transitions of orthorhombic NaAlF₄, the complex dielectric function, refractive index, extinction coefficient, reflectivity, absorption efficient, loss function and complex conductivity function are calculated. The optical properties and origins of the structure have been analysed.