正对电极结构型碳化硅光导开关的制备与性能研究

采用钒掺杂半绝缘6H-SiC衬底,以Ni/Au为接触电极制备了一系列正对电极结构型光导开关,对SiC光导开关进行了不同外加电压、激发光强、激发光波长条件下的测试,着重研究了SiC光导开关的光电吸收效应和光电响应性能.实验结果表明,532 nm的激光激发的脉冲信号宽度远小于1064 nm的激光激发的脉冲信号宽度,半绝缘6H-SiC衬底对532 nm激光的吸收系数在0.601～0.692 mm–1之间;采用532 nm的激光激发光导开关,获得了纳秒量级的响应信号;流经开关的瞬态电流随着外加电压和激发光能量的增加而增大,随着衬底厚度的增加而减小.     

铌酸钠钾基压电陶瓷的电场诱导介电特性

采用传统的固相反应合成法制备了0.9(K0.5Na0.5)NbO3-0.1LiSbO3(KNN-LS)无铅压电陶瓷,研究了它在不同直流偏置电场下的介电常数的频谱,并分析了直流偏置电场诱导下的相对介电常数变化值Δrε和调谐率K.随着偏置电场的增大,Δrε和K都变大,这与传统的钛酸锶钡陶瓷类的材料结果相反.同时,随着频率的增加,Δrε和K都减小.Δrε随偏置电压的增加而增大,意味着在高的电压下,样品的色散效应增大,其原因可以用空间电荷的极化理论来解释.另外,在外加偏置电压不高的情况下(3 kV/cm),就可以获得相对较大的调谐率1.17%.     

基于光导开关脉冲偏置电压的太赫兹时域光谱系统

利用光导开关产生脉冲偏置电压的方式改进了基于光电导天线的太赫兹时域光谱系统.在分析光电导天线产生THz波原理的基础上,重点研究了目前基于光电导天线的太赫兹时域光谱系统存在的问题,探讨了解决斩波器引起的机械噪声和光电导天线脉冲偏置电压之间矛盾的途径.最后,通过对光导开关的特性测试,提出了利用高压直流电源、光导开关和纳秒激...     

附加偏置电场对电弧离子镀TiN薄膜结构和性能的影响

为了改善电弧离子镀薄膜表面存在的大颗粒污染问题,在真空室内附加一个与靶-基连线垂直的偏置电场,探究不同偏置电压对薄膜表面形貌、微观结构和力学性能的影响规律。结果表明,不同电压下TiN薄膜均呈晶态,沿(111)晶面择优生长,薄膜的微观结构受偏置电场的影响很小。随偏置电压增大,薄膜的结合力、显微硬度呈现先增后减趋势,在24V时均达最大值,电压进一步增大到32V时,结合力和显微硬度反而有少许下降。偏置电场可以有效改善薄膜表面形貌,当电压为32V时,薄膜表面质量最好,摩擦因数仅为0.115。     

Ag／La0.67Sr0.33MnO3/Pt异质结构的电阻开关特性

采用脉冲激光沉积技术在Pt／Ti／SiO2／Si（100）衬底上制备出多晶La0.67Sr0.33MnO3（LSMO）薄膜,对其电脉冲致非挥发可逆电阻开关特性进行研究．结果表明,Ag/LSMO／Pt结构具有明显的室温电脉冲诱发电阻开关特性,且在宽电压脉冲作用下表现出较低的开关电压和较快的变阻饱和速度．由此可见,总脉冲能量或电荷（电流作用）为该结构的电阻开关效应提供驱动力．对Ag／LsMO／Pt结构进行了耐久性测试,表明该结构具有良好的疲劳特性与保持特性,可应用于新型不挥发存储器、传感器及可变电阻等电子元器件的研制     

SiC含量对机械合金化-热压制备B4C-SiC复合陶瓷的影响

以B₄C、SiC粗粉为原料, 采用机械合金化辅助热压烧结工艺, 在不添加任何助烧剂的情况下于1950℃制备出致密的B₄C-SiC复合陶瓷。通过对烧结样品进行相对密度、维氏硬度、抗弯强度和断裂韧性测试, 研究SiC含量对复合陶瓷力学性能的影响; 结合XRD、SEM和TEM对样品进行组分和微观结构分析, 研究其微观结构与力学性能之间的关系。结果表明: 复合陶瓷的相对密度和断裂韧性随SiC含量的增加而增大, 当SiC含量为50wt%时获得最大值为96.1%和4.6 MPa•m^1/2; 复合陶瓷的硬度和抗弯强度随SiC含量的增加呈先增大后减小的趋势, 在SiC含量为20wt%时获得最大值25.5 GPa和480 MPa。SiC相均匀分布在B₄C基体中使得复合陶瓷具有较高的强度; B₄C与SiC之间好的界面相容性以及SiC的高断裂韧性是该B₄C基复合陶瓷韧性得到显著提高的原因。     

悬臂梁压电发电装置的实验研究

为了进行压电陶瓷材料发电性能测试与研究,研制了一套悬臂梁压电振子发电系统.设计了悬臂梁压电振子,并对压电振子进行了有限元分析和电导测试.在此基础上,设计了能量存储电路,并在低频下对悬臂梁压电振子发电性能进行了实验研究.研究结果表明,当悬臂梁压电振子处于谐振频率状态下振动时,输出电压和功率达到最大.输出电压随着负载的增大而增大,输出功率并不随着负载的增大而增大;压电振子存在-个最佳阻抗,当负载与最佳阻抗匹配时,此时压电振子的能量转化效率最高且输出功率最大.利用本实验系统进行压电发电实验测试,当负载为50 kΩ时,压电振子输出电压为7 V;当负载电阻为15 kΩ时,此时的输出功率最大可达到1.4 mW,产生的功率可以满足无线传感器等低耗能产品的供能需求.     

SiC纤维表面C涂层的制备及介电性能研究

采用化学气相沉积(CVD)法,在SiC纤维表面沉积了100nm厚的C涂层,研究了制备温度对C涂层微观结构、单丝纤维体电导率及纤维编制体介电性能的影响.采用SEM和RAM显微技术(Raman microscopy)对C涂层的表面形貌和微观结构进行分析.结果表明:保持C涂层厚度一致,当沉积温度由800℃升到900℃后,C涂层的石墨化程度提高,晶粒变大,SiC纤维单丝体电导率由0.745Ω~(-1)·cm~(-1)升到6.289Ω~(-1)·cm~(-1);SiC纤维编制体的复介电常数实部由90升到132,介电损耗由0.95升到1.14,其中虚部由87升到150.实部增大与载流子浓度增大有关,虚部增大与材料漏导电有关.认为这是SiC纤维表面沉积的C层使纤维电导率增大所致.直流电导损耗足其主要损耗机制.     

微波加热合成SiC纳米线的研究

采用单质Si粉和酚醛树脂为原料、均混、成型、碳化, 并以10℃/min的升温速率在1300～1400℃/0.5～2h的微波加热条件下制备了SiC纳米线. 用SEM和TEM观察所得SiC纳米线形貌, EDX检测样品成分. 结果发现: 所制备的SiC纳米线具有典型的SiC/SiO₂芯－壳式缆状结构特征, 直径约为20～100nm. 分析认为, 在微波加热条件下, 液态Si在SiC纳米线生长过程中起着至关重要的作用, 既具有催化作用, 同时又是制备SiC纳米线的关键原料.     

Bi_2Te_3柔性热电薄膜发电器件

在几种形状不同的柔性电路板上磁控溅射Bi_2Te_3薄膜,温差测试之后进行结构的优化设计。在给予一定温差条件下,测量优化设计后的柔性热电薄膜在退火前后的输出电压和电阻率,并提出了改进措施。研究表明:优化后的柔性热电薄膜相较之前有很大的改善;柔性热电薄膜输出的电压与提供的温差近似呈线性关系;在温差为200K时,输出电压为310mV,电阻率为0.792mΩ·cm;200℃/h真空退火后,输出电压增大到368mV,电阻率也同时增大,达到0.869mΩ·cm。     

Optoelectronic transmitters for medical ultrasound transducers

Optoelectronics and fiber optics can be used to miniaturize and improve the flexibility of the transducer cable and transducer handle of medical diagnostic ultrasound scanners. The reduction in size has gained importance as 2-D array transducers with up to 1000 independent channels become accepted to improve diagnostic ultrasound images. The authors describe the analysis, design, fabrication and testing of a prototype silicon photoconductive semiconductor switch (PCSS). The monolithic silicon PCSS was used in combination with an infrared semiconductor diode laser with a fiber optic “pigtail” to shock excite and burst excite a 2-D array transducer element resonant at 2.5 MHz. Optically controlled voltage, current, and ultrasound pulses are compared to those from conventional electronic shock excitation and narrow band Doppler pulses. The optically triggered ultrasound pulse for single shock excitation produced 30 V spikes at the 2-D array element with a fall time of 200 nsec and a rise time of 2 μsec with a peak current through the transducer element of 34 mA. An optically produced burst of eight pulses at a frequency of 2.5 MHz produced 11 V spikes at the transducer with a fall time under 100 nsec and a rise time of approximately 300 nsec. The peak current per pulse was 25 mA through the transducer element. These results show the feasibility of applying optoelectronic technology to replace conventional electronic transmitter technology     

Development of single frame X-ray framing camera for pulsed plasma experiments

A single-frame X-ray framing camera has been set up for fast imaging of X-ray emissions from pulsed plasma sources. It consists of two parts, viz. an X-ray pin-hole camera using an open-ended microchannel plate (MCP) detector coupled to a CCD camera, and a high voltage short duration gate pulse for the MCP. The camera uses a 10-Μm pin-hole aperture for imaging on the MCP detector with a magnification of 6 X. The high voltage pulser circuit generates a pulse of variable duration from 5 to 30 ns (at 70% of peak amplitude) with variable amplitude from 800 V to 1.25 kV, and is triggered through a laser pulse synchronized with the event to be recorded. The performance of the system has been checked by recording X-ray emission from a laser-produced copper plasma. A reduction factor of ∼ 6.5 is seen in the dark current contribution as the MCP gate pulse is decreased from 250Μs to 5 ns duration.     

Band alignment at organic-inorganic heterojunctions between P3HT and n-type 6H-SiC

The exact band alignment at organic/inorganic semiconductor heterojunctions is influenced by a variety of properties and is difficult to predict. For organic/inorganic bilayer heterojunctions made of poly(3-hexylthiophene) (P3HT) and n-type 6H-SiC, the band alignment is determined via current-voltage measurements. For this purpose, a model equivalent circuit, combining thermionic emission and space-charge-limited current effects, is proposed which describes the behavior of the heterojunction very well. From the fitting parameters, an interface barrier height of 1.1 eV between the lowest unoccupied molecular orbital (LUMO) of P3HT and the conduction band (CB) of 6H-SiC is determined. In addition, from the maximum open circuit voltage of 6H-SiC/P3HT diodes, a difference of 0.9 eV between the highest occupied molecular orbital (HOMO) of P3HT and the CB of 6H-SiC is deduced. These two values determine the alignment of the energy bands of 6H-SiC relative to the HOMO and LUMO of P3HT. The 6H-SiC/P3HT bilayer heterojunction exhibits an open circuit voltage of ~0.5 V at room temperature, which makes such a materials system a potential candidate for bulk heterojunction hybrid solar cells with 6H-SiC nanoparticles.     

Discharge dynamics and characteristics of atmospheric glow discharge excited by sub-microsecond high voltage pulses

A study of sub-microsecond high voltage pulse excited glow discharges in atmospheric helium is carried out here. The discharge is generated between the powered copper electrode and ground electrode covered with a ceramic sheet. The electrical and optical characteristics of two discharge events in each voltage pulse in terms of discharge current amplitude, current pulse duration, time instant at current peak and accumulated charge in discharge are investigated on voltage pulse duration and pulse voltage magnitude. The time-resolved imaging with 5 ns exposure time is used to demonstration the spatio-temporal evolution of discharge. It is found that the first discharge depends markedly on pulse voltage magnitude and space charge accumulation on ceramic sheet surface plays an important role on ignition of second discharge.     

IGBT-based kilovoltage pulsers for ultrasound measurement applications

Two high-voltage pulser designs are presented that offer advantages in some ultrasound measurement applications, such as driving thick ultrasonic source transducers used for broadband measurements of attenuation or hydrophone frequency response and directivity. The pulsers use integrated gate bipolar transistors (IGBTs) as the switching devices, and in one design an output voltage pulse is produced that has a peak amplitude nearly twice that of the supply voltage. The pulsers are inexpensive and relatively easy to construct. The power supply need only provide the average current to charge the capacitors, as opposed to the much higher peak pulse current. With a 1200 V supply and a pulse repetition frequency of 200 Hz, the nondoubling and doubling pulsers provided peak voltages of greater than 1100 V and 2200 V, respectively, into loads ranging from 50 /spl Omega/ to 500 /spl Omega/. For a 50 /spl Omega/ load, slewing rates of 38 V/ns and 23 V/ns were measured for the nondoubling and doubling pulsers, respectively. For a 500 /spl Omega/ load these values were 56 V/ns and 36 V/ns.     

A periodic pulsed relativistic backward wave oscillator mechanically tunable in an expanded frequency band

We have studied a periodic pulse train regime (1 s, 50 Hz) of a relativistic backward wave oscillator with a resonant reflector, which can be mechanically tuned from pulse to pulse within a frequency band of 9% on a level of ?3 dB of the maximum in the entire microwave peak power range in a magnetic field of 0.36 T. The maximum peak power in a pulse train amounted to 2.5 GW at a frequency of 3.6 GHz, an efficiency of 20%, and a microwave pulse duration of 20 ns.     

Electrical and optical properties of p-SiC/n-GaN heterostructures

We report on the optical, electrical and structural properties of GaN films heteroepitaxially grown by low pressure chemical vapor deposition on 6H-SiC substrates. We employed photoluminescence (PL), Hall effect measurements, scanning tunneling microscopy (STM) and X-ray analysis to determine the quality of our films. Heterojunction diodes were fabricated on p-type SiC and characterized by temperature dependent current–voltage and capacitance–voltage techniques. The results are interpreted within the thermionic emission model and the barrier found is attributed to the conduction band offset between 6H-SiC and wurtzite GaN. The diodes show electroluminescence of the donor-acceptor pair recombination type of 6H-SiC at room temperature. By analysis of the injection behavior we can interpret our data, determining the high valence band offset between 6H-SiC and -GaN to 0.67 eV. This high valence band offset favors applications for hetero-bipolar transistors (HBT).     

Synchronization of two Q-switched lasers with 150 ps jitter

Two Nd:YLF lasers with a pulse duration of about 2 ns have been synchronized. The duration and synchronization of two laser pulses are provided by two pairs of Pockels cells with synchronized voltage pulses. One of the Pockels cells in the first pair ensures Q switching, and the other cuts out a 2 ns pulse from the giant 20 ns pulse. In the second pair, one of the cells, driven by a two-step voltage pulse, forms a giant pulse synchronized with the pulse of the first laser, and the other cell cuts a short pulse out of it. The proposed scheme allows a rather simple and reliable synchronization of two Q-switched lasers with a jitter of 150 ps.     

The effective anode-cathode gap in an ion diode operating in a bipolar-pulse regime

The effective anode-cathode gap (ACG) in a self-magnetically insulated ion diode operating in a double (bipolar) pulse regime has been studied. In this diode, the ACG is bounded by a plasma layer at the anode surface and by electrons drifting near the cathode surface. Analysis of the system operation showed that, during the first voltage pulse, the effective ACG decreases at a constant velocity of 1.5 ± 0.1 cm/μs from 9 to 1–2 mm (depending on the pulse duration) and is not completely bridged by plasma. After reversal of the voltage polarity, the effective gap width is restored for 10–20 ns on a nearly initial level. During the second pulse, electrons drift within a 1- to 1.5-mm-thick layer near the anode, while the thickness of a plasma layer on the anode surface does not exceed 0.5 mm.