Efficiency Enhancement of Single‐Walled Carbon Nanotube‐Silicon Heterojunction Solar Cells Using Microwave‐Exfoliated Few‐Layer Black Phosphorus

Carbon nanotube‐silicon (CNT‐Si)‐based heterojunction solar cells (HJSCs) are a promising photovoltaic (PV) system. Herein, few‐layer black phosphorus (FL‐BP) sheets are produced in N‐methyl‐2‐pyrrolidone (NMP) using microwave‐assisted liquid‐phase exfoliation and introduced into the CNTs‐Si‐based HJSCs for the first time. The NMP‐based FL‐BP sheets remain stable after mixing with aqueous CNT dispersion for device fabrication. Due to their unique 2D structure and p‐type dominated conduction, the FL‐BP/NMP incorporated CNT‐Si devices show an impressive improvement in the power conversion efficiency from 7.52% (control CNT‐Si cell) to 9.37%. Our density‐functional theory calculation reveals that lowest unoccupied molecular orbital (LUMO) of FL‐BP is higher in energy than that of single‐walled CNT. Therefore, we observed a reduction in the orbitals localized on FL‐BP upon highest occupied molecular orbital to LUMO transition, which corresponds to an improved charge transport. This study opens a new avenue in utilizing 2D phosphorene nanosheets for next‐generation PVs.     

Synergistic Use of Pyridine and Selenophene in a Diketopyrrolopyrrole‐Based Conjugated Polymer Enhances the Electron Mobility in Organic Transistors

To achieve semiconducting materials with high electron mobility in organic field‐effect transistors (OFETs), low‐lying energy levels (the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO)) and favorable molecular packing and ordering are two crucial factors. Here, it is reported that the incorporation of pyridine and selenophene into the backbone of a diketopyrrolopyrrole (DPP)‐based copolymer produces a high‐electron‐mobility semiconductor, PDPPy‐Se. Compared with analogous polymers based on other DPP derivatives and selenophene, PDPPy‐Se features a lower LUMO that can decrease the electron transfer barrier for more effective electron injection, and simultaneously a lower HOMO that, however, can increase the hole transfer barrier to suppress the hole injection. Combined with thermal annealing at 240 °C for thin film morphology optimization to achieve large‐scale crystallite domains with tight molecular packing for effective charge transport along the conducting channel, OFET devices fabricated with PDPPy‐Se exhibit an n‐type‐dominant performance with an electron mobility (μ_e) as high as 2.22 cm² V^?1 s^?1 and a hole/electron mobility ratio (μ_h/μ_e) of 0.26. Overall, this study demonstrates a simple yet effective approach to boost the electron mobility in organic transistors by synergistic use of pyridine and selenophene in the backbone of a DPP‐based copolymer.     

Solution‐Processed High‐Performance Tetrathienothiophene‐Based Small Molecular Blends for Ambipolar Charge Transport

Four soluble dialkylated tetrathienoacene ( TTAR) ‐based small molecular semiconductors featuring the combination of a TTAR central core, π‐conjugated spacers comprising bithiophene ( bT ) or thiophene ( T ), and with/without cyanoacrylate ( CA ) end‐capping moieties are synthesized and characterized. The molecule DbT‐TTAR exhibits a promising hole mobility up to 0.36 cm² V^?1 s^?1 due to the enhanced crystallinity of the microribbon‐like films. Binary blends of the p‐type DbT‐TTAR and the n‐type dicyanomethylene substituted dithienothiophene‐quinoid ( DTTQ‐11 ) are investigated in terms of film morphology, microstructure, and organic field‐effect transistor (OFET) performance. The data indicate that as the DbT‐TTAR content in the blend film increases, the charge transport characteristics vary from unipolar (electron‐only) to ambipolar and then back to unipolar (hole‐only). With a 1:1 weight ratio of DbT‐TTAR DTTQ‐11 in the blend, well‐defined pathways for both charge carriers are achieved and resulted in ambipolar transport with high hole and electron mobilities of 0.83 and 0.37 cm² V^?1 s^?1, respectively. This study provides a viable way for tuning microstructure and charge carrier transport in small molecules and their blends to achieve high‐performance solution‐processable OFETs.     

Charge Transport and Photocurrent Generation in Poly(3‐hexylthiophene): Methanofullerene Bulk‐Heterojunction Solar Cells

The effect of controlled thermal annealing on charge transport and photogeneration in bulk‐heterojunction solar cells made from blend films of regioregular poly(3‐hexylthiophene) (P3HT) and methanofullerene (PCBM) has been studied. With respect to the charge transport, it is demonstrated that the electron mobility dominates the transport of the cell, varying from 10^–8 m² V^–1 s^–1 in as‐cast devices to ≈3 × 10^–7 m² V^–1 s^–1 after thermal annealing. The hole mobility in the P3HT phase of the blend is dramatically affected by thermal annealing. It increases by more than three orders of magnitude, to reach a value of up to ≈ 2 × 10^–8 m² V^–1 s^–1 after the annealing process, as a result of an improved crystallinity of the film. Moreover, upon annealing the absorption spectrum of P3HT:PCBM blends undergo a strong red‐shift, improving the spectral overlap with solar emission, which results in an increase of more than 60 % in the rate of charge‐carrier generation. Subsequently, the experimental electron and hole mobilities are used to study the photocurrent generation in P3HT:PCBM devices as a function of annealing temperature. The results indicate that the most important factor leading to a strong enhancement of the efficiency, compared with non‐annealed devices, is the increase of the hole mobility in the P3HT phase of the blend. Furthermore, numerical simulations indicate that under short‐circuit conditions the dissociation efficiency of bound electron–hole pairs at the donor/acceptor interface is close to 90 %, which explains the large quantum efficiencies measured in P3HT:PCBM blends.     

Aza[5]helicene Rivals N‐Annulated Perylene as π‐Linker of D−π−D Typed Hole‐Transporters for Perovskite Solar Cells

The superior role of helical π‐linkers is demonstrated for the design of donor?π linker?donor typed molecular semiconductors in perovskite solar cells (PSCs). Flat N‐annulated perylene (NP) and contorted aza[5]helicene (A5H) are side‐functionalized with methoxyphenyl and end‐capped with dimethoxydiphenylamine electron‐donor to afford two small‐molecule hole‐transporters J3 and J4. For methoxyphenyl functionalized π‐linkers, intermolecular π???π interactions in planar NP exist more extensively than those in helical A5H. However, for the dimethoxydiphenylamine derived hole‐transporters with high highest occupied molecular orbital energy levels, a part of the π???π interaction remains for J4 with A5H, while this desirable effect for charge transport is completely deprived for J3 with NP. Thus, the theoretically predicted hole mobility of J4 single‐crystal is even over two times higher than that of J3 one. Because of the larger size of the molecular aggregate, the hole mobility of the spin‐coated J4 thin film is also over three times as high as that of the J3 analog. Due to the reduced transport resistance and enhanced recombination resistance, PSCs with J4 exhibit a power conversion efficiency of 21.0% at standard air mass 1.5 global conditions, which is higher than that of 19.4% with J3 and that of 20.3% with spiro‐OMeTAD control.     

Understanding Lattice Strain‐Controlled Charge Transport in Organic Semiconductors: A Computational Study

The softness and anisotropy of organic semiconductors offer unique properties. Recently, solution‐sheared thin‐films of 6,13‐bis(triisopropylsilylethynyl) pentacene (TIPS‐P) with nonequilibrium single‐crystal domains have shown much higher charge mobilities than unstrained ones (Nature 2011 , 480, 504). However, to achieve efficient and targeted modulation of charge transport in organic semiconductors, a detailed microscopic understanding of the structure–property relationship is needed. In this work, motivated by the experimental studies, the relationship between lattice strain, molecular packing, and charge carrier mobility of TIPS‐P crystals is elucidated. By employing a multiscale theoretical approach combining nonequilibrium molecular dynamics, first‐principles calculations, and kinetic Monte Carlo simulations using charge‐transfer rates based on the tunneling enabled hopping model, charge‐transport properties of TIPS‐P under various lattice strains are investigated. Shear‐strained TIPS‐P indeed exhibits one‐dimensional charge transport, which agrees with the experiments. Furthermore, either shear or tensile strain lead to mobility enhancement, but with strong charge‐transport anisotropy. In addition, a combination of shear and tensile strains could not only enhance mobility, but also decrease anisotropy. By combining the shear and tensile strains, almost isotropic charge transport could be realized in TIPS‐P crystal with the hole mobility improved by at least one order of magnitude. This approach enables a deep understanding of the effect of lattice strain on charge carrier transport properties in organic semiconductors.     

Thieno[3,2‐b]thiophene Flanked Isoindigo Polymers for High Performance Ambipolar OFET Applications

The synthesis of a new thieno[3,2‐b]thiophene isoindigo (iITT) based monomer unit, and its subsequent incorporation into a series of alternating copolymers is reported. Copolymerisation with benzothiadiazole, bithiophene and thiophene comonomer units by palladium catalysed cross coupling gives three new narrow band gap semiconducting polymers for OFET applications. Extending the fused nature of the isoindigo core serves to further enhance molecular orbital overlap along the polymer backbones and facilitate good charge transport characteristics thus demonstrating the potential of extending the fused ring system that is attached to the isoindigo core. When used as the semiconducting channel in top‐gate/bottom‐contact OFET devices, good ambipolar properties are observed, with hole and electron mobilities up to 0.4 cm²/Vs and 0.7 cm²/Vs respectively. The three new polymers show good stability, with high temperature annealing showing an increase in the crystallinity of the polymers which corresponds directly to charge carrier mobility improvement as shown by X‐ray diffraction, atomic force microscopy and photothermal deflection spectroscopy.     

Donor–Acceptor‐Conjugated Polymer for High‐Performance Organic Field‐Effect Transistors: A Progress Report

Polymeric semiconductors have demonstrated great potential in the mass production of low‐cost, lightweight, flexible, and stretchable electronic devices, making them very attractive for commercial applications. Over the past three decades, remarkable progress has been made in donor–acceptor (D–A) polymer‐based field‐effect transistors, with their charge‐carrier mobility exceeding 10 cm² V^?1 s^?1. Numerous molecular designs of D–A polymers have emerged and evolved along with progress in understanding the charge transport physics behind their high mobility. In this review, the current understanding of charge transport in polymeric semiconductors is covered along with significant features observed in high‐mobility D–A polymers, with a particular focus on polymeric microstructures. Subsequently, emerging molecular designs with further prospective improvements in charge‐carrier mobility are described. Moreover, the current issues and outlook for future generations of polymeric semiconductors are discussed.     

Solution Processable Fluorenyl Hexa‐peri‐hexabenzocoronenes in Organic Field‐Effect Transistors and Solar Cells

The organization of organic semiconductor molecules in the active layer of organic electronic devices has important consequences to overall device performance. This is due to the fact that molecular organization directly affects charge carrier mobility of the material. Organic field‐effect transistor (OFET) performance is driven by high charge carrier mobility while bulk heterojunction (BHJ) solar cells require balanced hole and electron transport. By investigating the properties and device performance of three structural variations of the fluorenyl hexa‐peri‐hexabenzocoronene (FHBC) material, the importance of molecular organization to device performance was highlighted. It is clear from ¹H NMR and 2D wide‐angle X‐ray scattering (2D WAXS) experiments that the sterically demanding 9,9‐dioctylfluorene groups are preventing π–π intermolecular contact in the hexakis‐substituted FHBC 4 . For bis‐substituted FHBC compounds 5 and 6 , π–π intermolecular contact was observed in solution and hexagonal columnar ordering was observed in solid state. Furthermore, in atomic force microscopy (AFM) experiments, nanoscale phase separation was observed in thin films of FHBC and [6,6]‐phenyl‐C61‐butyric acid methyl ester (PC₆₁BM) blends. The differences in molecular and bulk structural features were found to correlate with OFET and BHJ solar cell performance. Poor OFET and BHJ solar cells devices were obtained for FHBC compound 4 while compounds 5 and 6 gave excellent devices. In particular, the field‐effect mobility of FHBC 6 , deposited by spin‐casting, reached 2.8 × 10^?3 cm² V^?1 s and a power conversion efficiency of 1.5% was recorded for the BHJ solar cell containing FHBC 6 and PC₆₁BM.     

Boosting the Charge Transport Property of Indeno[1,2‐b]fluorene‐6,12‐dione though Incorporation of Sulfur‐ or Nitrogen‐Linked Side Chains

Alkyl chains are basic units in the design of organic semiconductors for purposes of enhancing solubility, tuning electronic energy levels, and tailoring molecular packing. This work demonstrates that the carrier mobilities of indeno[1,2‐b ]fluorene‐6,12‐dione ( IFD )‐based semiconductors can be dramatically enhanced by the incorporation of sulfur‐ or nitrogen‐linked side chains. Three IFD derivatives possessing butyl, butylthio, and dibutylamino substituents are synthesized, and their organic field‐effect transistors (OFET) are fabricated and characterized. The IFD possessing butyl substituents exhibits a very poor charge transport property with mobility lower than 10^?7 cm² V^?1 s^?1. In contrast, the hole mobility is dramatically increased to 1.03 cm² V^?1 s^?1 by replacing the butyl units with dibutylamino groups ( DBA‐IFD ), while the butylthio‐modified IFD ( BT‐IFD ) derivative exhibits a high and balanced ambipolar charge transport property with the maximum hole and electron mobilities up to 0.71 and 0.65 cm² V^?1 s^?1, respectively. Moreover, the complementary metal–oxide–semiconductor‐like inverters incorporated with the ambipolar OFETs shows sharp inversions with a maximum gain value up to 173. This work reveals that modification of the aromatic core with heteroatom‐linked side chains, such as alkylthio or dialkylamino, can be an efficient strategy for the design of high‐performance organic semiconductors.     

Nanostructure‐Dependent Vertical Charge Transport in MEH‐PPV Films

The correlation between morphology and charge‐carrier mobility in the vertical direction in thin films of poly(2‐methoxy‐5‐(2′‐ethylhexyloxy)‐1,4‐phenylenevinylene) (MEH‐PPV) is investigated by a combination of X‐ray reflectivity (XRR), field‐emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), fluorescence optical microscopy (FOM), photoluminescence spectroscopy (PL), photoluminescence excitation spectroscopy (PLE), as well as time‐of‐flight (TOF) and transient electroluminescence (TrEL) techniques. The mobility is about two orders of magnitude greater for drop‐cast films than for their spin‐cast counterparts. Drop‐casting in the presence of a vertical static electric field (E‐casting) results in films with an additional increase in mobility of about one order of magnitude. While PL and PLE spectra vary with the method of film preparation, there is no correlation between emission spectra and charge‐carrier mobility. Our XRR measurements on spin‐cast films indicate layering along the film depth while no such structure is found in drop‐cast or E‐cast films, whereas FESEM examination indicates that nanodomains within drop‐cast films are eliminated in the E‐cast case. These observations indicate that carrier transport is influenced by structure on two different length scales. The low mobility observed in spin‐cast films is a direct result of a global layered structure with characteristic thickness of ca. 4 nm: in the absence of this layered structure, drop‐cast films with inherent nanoscale heterogeneities (ca. 20 nm in size) exhibit much better hole mobility. Elimination of nanodomains via electric‐field alignment results in further improved charge mobility.     

Luminescent Poly(p‐phenylenevinylene) Hole‐Transport Layers with Adjustable Solubility

The active part of present polymer light‐emitting diodes (PLEDs) consists of only a single layer. Multilayer devices have the advantage that the electron and hole transport can be balanced and that the recombination can be removed from the metallic cathode, leading to higher efficiencies. A major problem for polymer‐based multilayer devices is the solubility of the materials used; a multilayer can not be fabricated when a spin‐cast layer dissolves in the solvent of the subsequent layer. We demonstrate the development of high‐mobility poly(p‐phenylenevinylene) (PPV)‐based hole‐transport layers with tunable solubility by chemical modification. Enhanced charge‐transport properties are achieved by using symmetrically substituted PPVs; copolymers of long and short side chains enable us to tune the solubility without loss of the enhanced charge transport. Dual‐layer PLEDs, in which the holes are efficiently transported via this copolymer towards the luminescent layer, exhibit an enhanced efficiency at high voltages (> 10 V) and a strongly improved robustness against electrical breakdown.     

Directed Growth and Electrical‐ Transport Properties of Carbon Nanotube Architectures on Indium Tin Oxide Films on Silicon‐Based Substrates

Growing aligned carbon nanotubes (CNTs) on electrically conducting and/or optically transparent materials is potentially useful for accessing CNT properties through electrical and optical stimuli. Here, we report a new approach to growing aligned bundles of multiwalled CNTs on a porous back contact of optically transparent and electrically conducting indium tin oxide (ITO) films on silicon and silica substrates without the use of a predeposited catalyst. CNTs grow from a xylene/ferrocene mixture, which traverses through the pores in the thin ITO film, and decomposes on an interfacial silica layer formed via the reaction between ITO and the Si substrate. The CNTs inherit the topography of the silica substrate, enabling back‐contact formation for CNTs grown in any predetermined orientation. These features can be harnessed to form CNT contacts with other substrate materials which, upon reduction by Si, results in a conducting interfacial layer. The ITO‐contacted CNTs exhibit thermally activated ohmic behavior across a 100 ± 10 meV barrier at electric fields below ～ 100 V cm^–1 due to carrier transport through the outermost shells of the CNTs. At higher electric fields, we observe superlinear behavior due to carrier tunneling and transport through the inner graphene shells. Our findings open up new possibilities for integrating CNTs with Si‐based device technologies.     

Organic Field‐Effect Devices as Tool to Characterize the Bipolar Transport in Polymer‐Fullerene Blends: The Case of P3HT‐PCBM

In organic bulk heterojunction solar cells (oBHJ) the blend morphology in combination with the charge transport properties of the individual components controls the extracted photocurrent. The organic field‐effect transistor (OFET) has been proved as a powerful instrument to evaluate the unipolar carrier transport properties in a wide range of cases. In our work we extend the OFET concept to the evaluation of the bipolar transport properties in polymer‐fullerenes blends and propose a method to improve the accuracy of the evaluation. The method is based on capacitance–voltage (C–V) measurements on MOS structures prepared on the same blends and delivers complementary information on the bulk heterojunction to the one obtained with FETs. The relevance for photovoltaic applications is investigated through the correlation between the current–voltage behavior of solar cells and the bipolar mobility for composites with varying polymer molecular weight and processed from different solvents. In particular the transport features of solar cells produced from o‐Xylene (oX), a non chlorinated solvent more suitable to production requirements, have been compared to the one of devices cast from Chlorobenzene (CB) solution. For the P3HT‐PCBM blend a consistent correlation between the mobility and the electrical fill factor and power performance was found. A significant asymmetry in the bipolar carrier mobility, together with low electron mobility dependent on the M_w value, affects the performances of thick o‐Xylene cast devices. In the case of devices processed from Chlorobenzene the slower carrier has higher mobility and the small electrical losses detected are eventually more related to the formation of space‐charge and eventually to surface recombination. This results in an efficient charge collection that is almost thickness independent. We report a dependence of the slow‐carrier type (electrons or holes) and their mobility on the specific combination of molecular weight and solvent. The mobility data and the solar cell performance coherently fit to the prediction of a device model only based on the drift of carriers under the built‐in electric field originated in the donor‐acceptor oBHJ.     

Carbon Nanotube‐Encapsulated Noble Metal Nanoparticle Hybrid as a Cathode Material for Li‐Oxygen Batteries

Although Li‐oxygen batteries offer extremely high theoretical specific energy, their practical application still faces critical challenges. One of the main obstacles is the high charge overpotential caused by sluggish kinetics of charge transfer that is closely related to the morphology of discharge products and their distribution on the cathode. Here, a series of noble metal nanoparticles (Pd, Pt, Ru and Au) are encapsulated inside end‐opened carbon nanotubes (CNTs) by wet impregnation followed by thermal annealing. The resultant cathode materials exhibit a dramatic reduction of charge overpotentials compared to their counterparts with nanoparticles supported on CNT surface. Notably, the charge overpotential can be as low as 0.3 V when CNT‐encapsulated Pd nanoparticles are used on the cathode. The cathode also shows good stability during discharge–charge cycling. Density functional theory (DFT) calculations reveal that encapsulation of “guest” noble metal nanoparticles in “host” CNTs is able to strengthen the electron density on CNT surfaces, and to avoid the regional enrichment of electron density caused by the direct exposure of nanoparticles on CNT surface. These unique properties ensure the uniform coverage of Li₂O₂ nanocrystals on CNT surfaces instead of localized distribution of Li₂O₂ aggregation, thus providing efficient charge transfer for the decomposition of Li₂O₂.     

Highly Efficient,Solution‐Processed,Single‐Layer,Electrophosphorescent Diodes and the Effect of Molecular Dipole Moment

A new family of highly soluble electrophosphorescent dopants based on a series of tris‐cyclometalated iridium(III) complexes (1–4) of 2‐(carbazol‐3‐yl)‐4/5‐R‐pyridine ligands with varying molecular dipole strengths have been synthesized. Highly efficient, solution‐processed, single‐layer, electrophosphorescent diodes utilizing these complexes have been prepared and characterized. The high triplet energy poly(9‐vinylcarbazole) PVK is used as a host polymer doped with 2‐(4‐biphenylyl)‐5‐(4‐tert‐butyl‐phenyl)‐1,3,4‐oxadiazole (PBD) for electron transport. Devices with a current efficiency of 40 cd A^?1 corresponding to an EQE of 12% can thus be achieved. The effect of the type and position of the substituent (electron‐withdrawing group (CF₃) and electron‐donating group (OMe)) on the molecular dipole moment of the complexes has been investigated. A correlation between the absorption strength of the singlet metal‐to‐ligand charge‐transfer (¹MLCT) transition and the luminance spectral red shift as a function of solvent polarity is observed. The strength of the transition dipole moments for complexes 1–4 has also been obtained from TD‐DFT computations, and is found to be consistent with the observed molecular dipole moments of these complexes. The relatively long lifetime of the excitons of the phosphorescence (microseconds) compared to the charge‐carrier scattering time (less than nanoseconds), allows the transition dipole moment to be considered as a “quasi permanent dipole”. Therefore, the carrier mobility is sufficiently affected by the long‐lived transition dipole moments of the phosphorescent molecules, which are randomly oriented in the medium. The dopant dipoles cause positional and energetic disorder because of the locally modified polarization energy. Furthermore, the electron‐withdrawing group CF₃ induces strong carrier dispersion that enhances the electron mobility. Therefore, the strong transition dipole moment in complexes 3 and 4 perturbs both electron and hole mobilities, yielding a reduction in exciton formation and an increase in the device dark current, thereby decreasing the device efficiency.     

Effect of Donor Molecular Structure and Gate Dielectric on Charge‐Transporting Characteristics for Isoindigo‐Based Donor–Acceptor Conjugated Polymers

This study investigates the effect of the molecular structure of three different donor units, naphthalene (Np), bithiophene (BT), and thiophene–vinylene–thiophene (TVT), in isoindigo (IIG)‐based donor –acceptor conjugated polymers (PIIG‐Np, PIIG‐BT and PIIG‐TVT) on the charge carrier mobility of organic field‐effect transistors (OFETs). The charge transport properties of three different IIG‐based polymers strongly depend on donor units. PIIG–BT OFETs showed 50 times higher hole mobility (0.63 cm² V^?1 s^?1) than PIIG–TVT and PIIG–Np ones of ≈ 0.01 cm² V^?1 s^?1 with CYTOP dielectric though the BT units have less planarity than the TVT and Np units. The reasons for the different mobility in IIG‐based polymers are studied by analyzing the energy structure by absorption spectra, calculating transport levels by density functional theory, investigating the in‐ and out‐of‐plane crystallinity of thin film by grazing‐incidence wide‐angle X‐ray scattering, and extracting key transport parameters via low‐temperature measurements. By combining theoretical, optical, electrical, and structural analyses, this study finds that the large difference in OFET mobility mainly originates from the transport disorders determined by the different microcrystal structure, rather than the intrinsic transport properties in isolated chains for different polymers.     

Controlling Ambipolar Charge Transport in Isoindigo‐Based Conjugated Polymers by Altering Fluorine Substitution Position for High‐Performance Organic Field‐Effect Transistors

A molecular design strategy to achieve highly balanced ambipolar charge transport for donor–acceptor (D–A) isoindigo (IIG)‐based copolymer through systematic selection of fluorination positions is reported. To study fluorine substitution site effects on electronic and structural properties, two fluorinated IIG‐based copolymers (PIIG‐iFT2 and PIIG‐oFT2) are synthesized, which contain two fluorine atoms at the bithiophene (T2) inner and outer site and compare them with a nonfluorinated copolymer of IIG and T2 (PIIG‐T2) as the reference polymer. Fluorination at the outer site of T2 in PIIG‐oFT2 polymer effectively lowers molecular energy levels and increases molecular planarity more than fluorination at the T2 inner site. PIIG‐oFT2 organic field‐effect transistors show highly balanced ambipolar mobility, hole mobility (μ_h)/electron mobility (μ_e) = 1 by increasing electron mobility, whereas PIIG‐T2 (μ_h/μ_e = 9.0) and PIIG‐iFT2 (μ_h/μ_e = 2.4) exhibit unbalanced ambipolar transport. The ambipolar complementary‐like inverter is also demonstrated by simple one‐time coating of PIIG‐oFT2 with gain = 21.     

High‐Mobility Air‐Stable Solution‐Shear‐Processed n‐Channel Organic Transistors Based on Core‐Chlorinated Naphthalene Diimides

High charge carrier mobility solution‐processed n‐channel organic thin‐film transistors (OTFTs) based on core‐chlorinated naphthalene tetracarboxylic diimides (NDIs) with fluoroalkyl chains are demonstrated. These OTFTs were prepared through a solution shearing method. Core‐chlorination of NDIs not only increases the electron mobilities of OTFTs, but also enhances their air stability, since the chlorination in the NDI core lowers the lowest unoccupied molecular orbital (LUMO) levels. The air‐stability of dichlorinated NDI was better than that of the tetrachlorinated NDIs, presumably due to the fact that dichlorinated NDIs have a denser packing of the fluoroalkyl chains and less grain boundaries on the surface, reducing the invasion pathway of ambient oxygen and moisture. The devices of dichlorinated NDIs exhibit good OTFT performance, even after storage in air for one and a half months. Charge transport anisotropy is observed from the dichlorinated NDI. A dichlorinated NDI with ?CH₂C₃F₇ side chains reveals high mobilities of up to 0.22 and 0.57 cm² V^?1 s^?1 in parallel and perpendicular direction, respectively, with regard to the shearing direction. This mobility anisotropy is related to the grain morphology. In addition, we find that the solution‐shearing deposition affects the molecular orientation in the crystalline thin films and lowers the d(001)‐spacing (the out‐of‐plane interlayer spacing), compared to the vapor‐deposited thin films. Core‐chlorinated NDI derivatives are found to be highly suitable for n‐channel active materials in low‐cost solution‐processed organic electronics.     

Mitigating Plasmonic Absorption Losses at Rear Electrodes in High‐Efficiency Silicon Solar Cells Using Dopant‐Free Contact Stacks

Although charge‐carrier selectivity in conventional crystalline silicon (c‐Si) solar cells is usually realized by doping Si, the presence of dopants imposes inherent performance limitations due to parasitic absorption and carrier recombination. The development of alternative carrier‐selective contacts, using non‐Si electron and hole transport layers, has the potential to overcome such drawbacks and simultaneously reduce the cost and/or simplify the fabrication process of c‐Si solar cells. Nevertheless, devices relying on such non‐Si contacts with power conversion efficiencies (PCEs) that rival their classical counterparts are yet to be demonstrated. In this study, one key element is brought forward toward this demonstration by incorporating low‐pressure chemical vapor deposited ZnO as the electron transport layer in c‐Si solar cells. Placed at the rear of the device, it is found that rather thick (75 nm) ZnO film capped with LiF_x/Al simultaneously enables efficient electron selectivity and suppression of parasitic infrared absorption. Next, these electron‐selective contacts are integrated in c‐Si solar cells with MoO_x‐based hole‐collecting contacts at the device front to realize full‐area dopant‐free‐contact solar cells. In the proof‐of‐concept device, a PCE as high as 21.4% is demonstrated, which is a record for this novel device class and is at the level of conventional industrial solar cells.