Advanced monochrome gray‐scale TFT‐LCD using diamond‐like‐carbon/ion‐beam alignment technology

Abstract— A novel liquid‐crystal alignment method, diamond‐like carbon and ion beam alignment (DLC/IB) technology, was announced at the 2001 SID Symposium. And since December 2001, a new‐generation ion‐beam machine has been placed into the manufacturing line of IDTech. DLC/IB technology is mainly used for medical displays, which require a monochrome high‐density and super‐uniform display. We report on the latest developments of these advanced monochrome displays.     

Ferroelectric liquid crystal aligned on SiO2 thin films using ion‐beam deposition

Abstract— Results for a ferroelectric‐liquid‐crystal (FLC) display cell, aligned on inorganic SiO₂ thin‐film surfaces by using oblique ion‐beam sputtering deposition on the substrates, is presented. A large deposition angle from 60° to 80° can be employed for the thin alignment layer, with thicknesses varying from 5 to 40 nm. Two types of uniform alignment, chevron (before electrical treatment) and quazi‐bookshelf (after electrical treatment), were studied. High‐quality alignment on large‐sized substrates was also easily be achieved because of the linear design of the ion‐beam sputtering source, which was previously a significant challenge for FLC on SiO_x layers.     

Electro‐optical characteristics and optimization of vertically aligned STN‐LCDs

A new LCD for high‐duty passive‐matrix driving, referred to as a vertically aligned (VA) STN‐LCD, characterized by high transmittance and a high contrast ratio, has been developed. This LCD can display black‐and‐white images by using crossed polarizers without the use of a color compensator because the LCD has almost zero retardation at the initial alignment state. A fabricated black‐and‐white VA‐STN‐LCD without a black matrix shows high transmittance (>15%) and contrast (CR > 100) under 1/240‐duty direct‐multiplex driving.     

Motion‐blur‐free LCD for high‐resolution virtual reality displays

A new liquid crystal display device with fast response time, high transmittance, and low voltage for virtual reality is reported. When driven at 90 Hz with 17% duty ratio, the motion picture response time is 1.5 ms, which is comparable with cathode‐ray tube, leading to indistinguishable motion blur. Moreover, this device enables high‐resolution density because only one thin‐film transistor per pixel is needed and it has a built‐in storage capacitor.     

Novel photo‐aligned LC‐polymer compensation film for wide‐view TN displays

Abstract— We demonstrate a novel TN‐display compensation film with excellent contrast and minimal color shift, meeting the requirements for avionics displays. The film configuration was identified via extensive computer modeling. The experimental implementation based on ROLIC's LPP/LCP (linearly photopolymerizable polymer/liquid‐crystal polymer) technology results in excellent agreement with theoretical predictions.     

A new pixel design and a novel driving scheme for multi‐domain vertically aligned LCDs

Abstract— By using a new pixel design and a novel driving scheme that adds a bias electrode and a bias TFT to the ordinary pixel structure, a high‐contrast‐ratio and wide‐viewing‐angle LCD mode, refered to as the biased vertical‐alignment (BVA) mode, has been sucessfully developed. Compared to the published data on the PVA and MVA modes, the BVA mode has a distinct advantage of lower manufacturing cost due to the elimination of a lithographic process step that forms either ITO cuts or protrusions on the color‐filter substrates. The BVA mode requires ITO cuts on the TFT substrate similar to that for the PVA and MVA modes. The 15‐in. BVA‐mode XGA prototype exhibits a high contrast ratio of 1200:1 and high cell transmittance of 4.3%.     

Optical design and roll‐to‐roll fabrication process of microstructure film for wide viewing LCDs

We have developed a new microstructure film for wide viewing liquid crystal displays (LCDs). By attaching it to the surface of a conventional LCD, the viewing angle characteristics of LCD has drastically improved without causing a blur of the frontal image and a decrease in the contrast ratio under bright ambient light conditions. This film can be applied to various LC modes including twisted nematic and multidomain vertical alignment by changing its internal micrometer‐size 3D structure. Further, this film can be mass‐produced efficiently by self alignment roll‐to‐roll process.     

Plasma‐beam alignment of passive liquid crystals (Invited Paper)

Abstract— A plasma‐beam process, developed for the alignment of liquid crystals (LC) in electro‐optic applications, has been successfully applied to align “non‐standard” LC, such as crystalline materials with LC phases at elevated temperatures and reactive mesogenes. In addition to the high alignment quality of the materials, there is no need for an intermediate layer between the substrate and the LC layer. Furthermore, the construction of our source simplifies the alignment procedure of large‐area rigid substrates and the roll‐to‐roll processing of flexible films. This method opens new horizons for optical retarders and polarizers, as well as anisotropic semiconducting films for organic electronics.     

Letter: Solution‐processed flexible zinc‐tin oxide thin‐film transistors on ultra‐thin polyimide substrates

In this letter, solution‐processed flexible zinc‐tin oxide (Z_0.35T_0.65O_1.7) thin‐film transistors with electrochemically oxidized gate insulators (AlOx:Nd) fabricated on ultra‐thin (30 µm) polyimide substrates are presented. The AlOx:Nd insulators exhibited wonderful stability under bending and excellent insulating properties with low leakage current, high dielectric constant, and high breakdown field. The device exhibited a mobility of 3.9 cm²/V · s after annealing at 300 °C. In addition, the flexible device was able to maintain the electricity performance under various degrees of bending, which was attributed to the ultra‐thin polyimide substrate.     

Effects of gate‐bias stress on ZnO thin‐film transistors

Abstract— The effects of gate‐bias and thermal stress on the stability issues of zinc oxide thin film transistors (ZnO TFTs) deposited on glass substrates were investigated. The shift in threshold voltage for devices undergoing various post‐growth annealing conditions using a stretched‐exponential formalism was analyzed. The analysis indicated that the extracted parameters such as the time constant and the effective energy barrier (E^τ) can be correlated to the device trap states associated with the annealing conditions. Improvement in the channel conductance and interface quality, hence the resultant device stability, can therefore be resumed when subject to a thermal treatment at 400°C for 30 minutes compared with those annealed for a shorter time.     

EO characteristics for a photoaligned VA‐1/4 π cell on a photopolymer layer

The generation of a liquid‐crystal (LC) tilt angle on a copolymer with chalconyl and cholesteryl moiety characteristics was performed, and the electro‐optical (EO) performance of the photoaligned vertical‐alignment (VA) 1/4 π cell by polarized UV exposure on a homeotropic photopolymer surfaces was studied. The LC tilt angles decreased as UV exposure time increased on the copolymer surfaces. A tilt angle of 87° in NLC was observed with an UV exposure of 3 min on the photoalignment‐2 surface. The LC tilt angle is attributed to increased chalcone moiety with increasing UV exposure time. Excellent voltage‐transmittance (V‐T) curves of the photoaligned VA 1/4 π cell by polarized UV exposure on the photopolymer surface for 3 min containing a cholesteryl moiety of 8% were obtained. The V‐T and response‐time characteristics can be improved by the presence of a cholesteryl moiety in the photopolymer.     

Development of active matrix LCD for use in high‐resolution adaptive headlights

Conventional adaptive driving beam headlamps are limited in achieving still higher quantities of switchable pixels by the number of LEDs and movable elements needed. In this paper, it is shown that by integrating an active matrix liquid crystal display module, it is possible to realize fully adaptive high‐resolution headlights without mechanical elements and a finite number of LED with 30 k switchable pixels.     

Instability of light illumination stress on amorphous In–Ga–Zn–O thin‐film transistors

Amorphous In–Ga–Zn–O thin‐film transistors (TFTs) have attracted increasing attention due to their electrical performance and their potential for use in transparent and flexible devices. Because TFTs are exposed to illumination through red, green, and blue color filters, wavelength‐varied light illumination tests are required to ensure stable TFT characteristics. In this paper, the effects of different light wavelengths under both positive and negative V_GS stresses on amorphous In–Ga–Zn–O TFTs are investigated. The TFT instability that is dependent on optical and electrical stresses can be explained by the charge trapping mechanism and interface modification.