一种新型的用于高速串行接口电路中的接收器

本文提出了一种新型的符合计算机与外围设备间通用串行接口USB(Universal Serial Bus)2．0高速模式(480Mb／s数据传输率)的高精度接收器电路，并分析了其设计思路和设计方案。这种高精度接收器由三级电路组成：电压转换级、数据采样级和数据保持级。电路设计基于TSMC的CMOS 0．25μm混合信号模型。仿真结果表明，这种接收器在500Mb／s的信号传输速率下，将输入数据的上升和下降时间从700ps降至140ps，提高了高速串行通信中采样数据的准确度，以保证可靠、正确接收数据。     

高速4选2交叉点开关

MAX4989是双向、4选2、USB2．0交叉点开关。该器件能够切换任何4选2USB差分对,并支持高达480Mb／s的数据速率,从而可同时切换多个USB主器件。MAX4989开关架构具有5．0Ω（典型值）低导通电阻和6．0pF（典型值）低导通电容,从而可实现上述性能。另外,集成电荷泵提升了性能,可提供支持高速USB应用所需的轨到轨满摆幅信号,这使器件也兼容于早期USB。     

EEPW网站精彩内容摘录

视频名称：USB3．0验证、调试和一致性测试解决方案 USB（通用串行总线）能让便携式磁盘驱动器、打印机和数码相机等外部设备,使用一个通用接口插座连接到PC上,并允许热插拔这些设备。USB2.0和无线USB的最大理论数据速率是480Mb／s。USB3．0的工作速率将达到5Gb／s。     

ISP1362在基于FPGA的红外成像系统中的应用

ISP1362是飞利浦推出的一款USB可编程控制芯片,其内部集成了一个高级主控制器,一个外设控制器,主机和设备控制器兼容USB2．0协议,支持12Mb／s的全速传输和1．5Mb／s的低速传输;芯片有三种工作模式,即主机控制器模式、设备控制器模式和OTG模式。主要针对USB控制芯片ISP1362在基于FPGA的红外成像系统的数据采集中的应用,利用VerilogHDL语言完成其在设备控制器模式下的功能,具有很好的可移植性。     

10 Gb/ s 0. 18 􀀁m CMOS 激光二极管驱动器芯片

基于0．18μm CMOS工艺设计的10Gb／s激光二极管驱动器电路。核心单元为两级直接耦合的差分放大器，电路中采用了并联峰化技术和放大级直接耦合技术以扩展带宽，降低功耗。模拟结果表明，在1．8V电源电压作用下该电路可工作在10Gb／s速率上，输入单端峰峰值为0．3V的差分信号时，在单端50Ω负载上的输出电压摆幅可达到1．4V，电路功耗约为85mW。     

大连捷成：iMOD-SDA系列数字视频分配放大模块

iMOD-SDA系列数字视频分配放大模块的输入／输出接口为BNC方式．支持1路或2路输入．8路分配输出或4路输出。可以处理DVB-ASI,SMPTE 259Mb／s标准的信号和10-540Mb／s之间任意码率的数字信号。其电缆均衡功能专门用于长距离传输的数字信号的自动电缆均衡．均衡距离可达300m@270Mb／s（Belden8281）,并能对电缆     

一种0.18μm的高速USB2.0收发器

文中针对USB 2.0规范设计了一种高速收发器.在480Mb/s数据速率的高速模式下,在常规收发器的基础上作了改进,并为包络检波器设计了新颖的采样比较电路.该收发器基于SMIC 0.18μn 1P6M 3.3V/1.8VCMOS混合信号工艺设计,HSPICE仿真结果表明:该收发器能够在480Mb/s的数据速率下按USB2.0规范要求发送和接收数据.     

新型光电一体化光纤传输设备

GD／MFJM34-Ⅲ型光端机和中继机是成都吉明光纤通信设备有限公司最新推出的8B1H1C码光电一体化的光纤传输设备。它把32个2Mb／s信号异步复接成8个8Mb／s信号，再把8个8M和1个H码、1个C码同步复接成84．48Mb／s信号，然后驱动光源，发到光纤线路上；收端进行反变换。     

一种新的8B／10B编码电路设计

高速串行数据传输中广泛采用8B／10B编码。为得到结构简单、易于大规模集成的编码电路,文中在深入分析8B／10B编码内在相关性和逻辑关系的基础上,采用ECL结构和0．6μmBiCMOS工艺,设计了8B／10B编码电路。并将该编码电路应用于传输速率400Mb／s的高速串行数据发送器中。与现有8B／10B编码方法相比,仿真结果表明采用该方法实现的编码电路逻辑运算量小、速度快;实测结果表明该编码电路具有误码率低、可靠性高等优点。     

用于10 Mb/s和100 Mb/s以太网的时钟数据恢复电路

设计了一个用于10Mb／s和100Mb／s以太同的时钟数据恢复电路，采用双环路结构，增加了系统的稳定性。电路各组成部分的设计进一步增强了锁相环工作的稳定性。电路行为级仿真采用Mentor的ADMS，电路级设计采用Chartered 0．25um CMOS工艺。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.