GaN缺陷晶体高分辨电子显微像的解卷处理

拍摄高分辨电子显微像时未必总靠近Scherzer聚焦条件，且晶体有一定厚度，致使像未必反映晶体结构。对高分辨像进行解卷处理是校正像中畸变的晶体结构信息并提高图像分辨率的有效方法。本文用高分辨像图像解卷处理方法研究GaN材料中缺陷核心的原子配置。     

用200 kV电子显微镜分辨Li1-xNbO2中的Nb和O原子

在远离Scherzer聚焦条件下,用200 kV的高分辨电子显微镜拍摄了Li1-xNbO2(x≈0.7)高分辨像,再借助像解卷处理使之恢复为直接反映晶体投影结构的解卷像.在不同晶体厚度的解卷像上均能清楚地分辨间距为0.153nm的Nb和O原子柱,看不见"原子.Nb和O原子的衬度随厚度变化的规律符合赝弱相位物体近似像衬理论.从像模拟得知,即使原始像的离焦量接近Sdaerzer聚焦条件,解卷处理也同样有助于提高像的质量,并分辨开单个的O原子柱.     

高分辨电子显微像的解卷处理程序:DEC

高分辨电子显微像因离焦量和晶体厚度等因素的影响，未必能正确反映晶体结构。为此，李方华等建立并发展了高分辨像的解卷处理技术，将单张高分辨像恢复为结构像，并提高像的分辨率。DEC是为高分辨像解卷处理编写的配套计算机程序，将此程序应用于Si0.75Ge0.24晶体中缺陷的实验高分辨像，     

高分辨像的解卷处理用于S-Al_2 CuMg相及孪晶界面结构确定CSCD

S-Al2CuMg相是Al-Cu-Mg合金中重要的强化相,但它的晶体学结构还存在争议。利用高分辨电子显微学和像的解卷处理技术,获得了Al-Cu-Mg合金中S-Al2CuMg相在[100],[010]和[001]的原子投影图,进而验证PW模型是S相正确的结构模型。另外,将动力学校正引入到S相孪晶图像的处理过程,确定了S相孪晶面的位置。像解卷处理方法首次应用于金属材料并确定了S相缺陷结构,说明该方法适用于金属材料。通过解卷处理方法可以使原本不直接对应所观察材料的高分辨晶格像转变成点分辨率达到电镜的信息分辨极限的结构像。     

用200 kV高分辨电子显微镜辨认3C-SiC中的硅和碳原子

用200 kV六硼化镧灯丝的高分辨电子显微镜拍摄了外延生长在硅衬底的3C-SiC薄膜的[110]显微像.经过解卷处理和衍射振幅校正,把实验像转换为直接反映晶体投影结构的结构像,近邻Si、C原子柱显现为黑(灰)的像点对,即所谓的哑铃.测量了结构像中不同厚度区域哑铃的灰度变化,分析了哑铃中二个端点的相对灰度值随厚度的变化关系,结合赝弱相位物体近似像衬理论进行分析,辨认出Si与C原子柱.     

最大熵像解卷结合像模拟确定Nd1．85Ce0．15CuO4-δ的晶体结构

本文从一幅高分辨电子显微像出发,用像解卷结合像模拟[1]研究了超导氧化物Nd1.85Ce0.15CuO4-δ的晶体结构,并对最大熵解卷技术作进一步探讨.     

蛋白质晶体高分辨电子显微像的直接法解卷

蛋白质晶体高分辨电子显微像的直接法解卷＊阳世新李方华（中国科学院物理研究所和中国科学院凝聚态物理中心，北京１０００８０）＊本工作得到国家自然科学基金委员会的资助基于弱相位体近似的高分辨电子显微像解卷处理已成功应用于测定无机材料的晶体结构［１］。曾分别...     

球差校正高分辨电子显微像的像衬和解卷处理

本工作将赝弱相位物体近似像衬理论延伸至球差校正高分辨电子显微像,分析了球差校正像的衬度随样品厚度的变化规律。指出非Schemer聚焦条件下球差校正电镜拍摄的高分辨像仍未必反映晶体结构,讨论了解卷处理方法应用于球差校正像的有效性,并以有12型层错的GaN晶体为例,借助像模拟肯定了解卷处理能用于复原原子分辨率晶体缺陷的结构像。     

缺陷晶体电子衍射波振幅的校正

在运动学近似下，通过解卷处理，可以从单张高分辨电子显微像（以下简称高分辨像）获得晶体的结构像。李方华和何万中等人曾用此技术处理了场发射电子显微镜拍摄的高分辨像，处理后的像分辨率达电子显微镜的信息分辨极限，得到了原子分辨率的晶体缺陷图像［１，２］。但由...     

（Y0.6Ca0.4）（SrBa）（Cu0.5B0.5）Cu2O7—δ的电子晶体学研究

(Y0.6Ca0.4)(SrBa)(Cu0.5B0.5)Cu2O7-δ晶体是在YBa2Cu3O7-δ超导材料中用Ca、Sr、B原子分别部分取代Y、Ba、Cu.实验表明不同量B的掺入使晶体失去超导性质,而同时再掺入Ba和Ca则又恢复超导电性[1].对其晶体结构的研究可望有助于解释这些现象.本文用高分辨电子显微学与电子衍射相结合的电子晶体学图像处理方法[2]研究了该晶体的结构.目的是先通过对高分辨电子显微镜作解卷处理,测定出低分辨率的晶体结构,然后从解卷像出发,结合电子衍射数据进行相位外推,得到能分辨出所有原子的晶体结构像.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.