制作网页的利器——Flash

Ｆｌａｓｈ是一种先进的交互式矢量多媒体开发技术，但目前的应用却不多，因为它要求用户必须先安装ＳｈｏｃｋｗａｖｅＦｌａｓｈ插件才能观看特殊效果。但用Ｆｌａｓｈ技术制作的网页却有着非常精彩的效果，它会打动每一位观众。显然，这是未来ＷＥＢ发展的一大流派之一。因此，适当的了解Ｆｌａｓｈ，关注Ｆｌａｓｈ的发展，对每一位网页设计者都有着不可低估的意义。一、Ｆｌａｓｈ的“起源”及优点Ｆｌａｓｈ的前身是ＦｕｔｕｒｅＳｐｌａｓｈ，是早期网上流行的矢量动画插件。Ｍａｃｒｏｍｅｄｉａ公司后来收购了ＦｕｔｕｒｅＳｐｌ…     

具有块擦除功能的1Mb闪速存储器MX28F1000PQC

ＭＸ２８Ｆ１０００ＰＱＣ是１Ｍｂ闪速存储器。它不但具有小容量Ｆｌａｓｈ的优点，而且还具备在大容量Ｆｌａｓｈ产品才拥有的自动编程和扇区（块）擦除功能，本文介绍了该芯片的特点，命令描述，并给出与ＭＣＳ－５１接口的应用实例。     

Flash 4及其在影视制作中的应用

上网已经成为现代人重要的生活内容,因为网上的风景的确吸引人。不过,不知您发现了没有,目前网上出现了一股Ｆｌａｓｈ4热潮。在Ｍａｃｒｏｍｅｄｉａ公司的网站上有这样一段话,“全世界有76.8%的Ｗｅｂ浏览器中已经安装了Ｆｌａｓｈ的播放插件,这意味着有超过1亿的用户可以立即观看Ｆｌａｓｈ作品。”这一段话真真切切地道出了Ｆｌａｓｈ的影响力。1　Ｆｌａｓｈ4的基本情况Ｆｌａｓｈ4是一个矢量图形和交互式动画的制作软件。说Ｆｌａｓｈ4,就不能不提大名鼎鼎的Ｍａｃｒｏｍｅｄｉａ公司,广为应用的Ａｕｔｈｏｒｗａｒｅ和Ｄｉｒｅｃｔｏ…     

Cisco路由器的Flash和NVRAM

Ｃｉｓｃｏ路由器的Ｆｌａｓｈ和ＮＶＲＡＭ是两个重要的存储设备 ,正确地理解和掌握其使用方法可以更好地完成对路由器的配置和管理工作。１对Ｆｌａｓｈ的维护Ｆｌａｓｈ如同ＰＣ机上的ＢＩＯＳ (基本输入输出系统 ) ,其中存放的是Ｃｉｓｃｏ路由器的ＩＯＳ,对它的维护主要就是对ＩＯＳ文件的备份和恢复。在路由器的ｅｎａｂｌｅ状态下用“ｄｉｒ”命令 ,就可以查看到Ｆｌａｓｈ上存储的ＩＯＳ文件名及其大小。比如Ｃｉｓｃｏ１７２０的ＩＯＳ的文件名是ｃ１７００ -ｙ -ｍｚ．１２０ -４．Ｔ,长度为２６６６４９６字节。Ｆｌａｓｈ是可编…     

又给业界一个惊奇——Intel公司0.25μm闪速存储器生产线投产

许多人都知道Ｉｎｔｅｌ的ＣＰＵ在全球独占鳌头，但并不知道Ｉｎｔｅｌ在闪速存储器方面也是世界第一，其产量占全球的三分之一，即每三个闪速存储器芯片中就有一个是Ｉｎｔｅｌ的。去年年底，该公司推出了在同等体积里存储容量翻一番的ＳｔｒａｔａＦｌａｓｈ系列闪速存...     

单片机在线装定数据的抗干扰对策及实现方法

讨论了几种单片机存储器的数据安全性，指出用ＦｌａｓｈＲＯＭ作存储器，约束其编程条件，能解决单片机装定数据的在线性速修改与非易失性之间的矛盾，提高单片在在强电磁脉环境中的抗干扰能力，并结合实例说明约束ＦｌａｓｓｈＲＯＭ编程条件的实现方法及系统抗干扰考核效果。     

快闪存储器市场纵横

快闪存储器市场纵横快闪存储器（ＦｌａｓｈＭｅｍｏｒｙ）是一种可整片擦除或按字节区段重新（反复１０万次）写人指令的新型半导体存储器件，具有非易失性、高速存取、集成度高、耐振动冲击、功耗极微、保存数据无需电池支持等特点，因此自９０年代初问世以来，国际上一...     

小扇区可擦写存储器在IC卡收费机中的应用

分析了小扇区可撩写存储器ＦｌａｓｈＡＴ２９Ｃ０１０Ａ的特性通过在ＩＣ卡收费机中的应用介绍其使用方法，软件设计上利用硬件日历时钟的内部非易性ＲＡＭ作为收费交易数据暂存区，即可弥补ＡＴ２９Ｃ０１０Ａ的不足之处。     

按小扇区擦除和编程的ATMEL Flash Memory及应用

文章以美国ＡＴＭＥＬ公司１９９５年新推出大容量按小扇区操作ＦｌａｓｈＭｅｍｏｒｙ２９Ｃ０４０Ａ（５１２Ｋ×８）为例，说明了ＡＴＭＥＬＦｌａｓｈＭｅｍｏｒｙ与Ｉｎｔｅｌ２８Ｆ＊系列不同的设计特点，并结合在单片机系统的应用，介绍了其应用技巧和经验．     

对Flash 4进行影视制作的分析

Ｆｌａｓｈ ４是一个矢量图形和交互式二维动画的制作软件，由大名鼎鼎的Ｍａｃｒｏｍｅｄｉａ 公司出品。由于它基于矢量图形标准进行动画创作，有效地减少了数据量，缓解了网上数据传输的压力，因而成为网络动画制作的首选，风靡世界。在使用中笔者发现，Ｆｌａｓｈ ４不仅在网络动画制作上游刃有余，而且在影视动画制作中也大有可为。１ Ｆｌａｓｈ ４进行影视制作的优势目前，在影视制作领域使用的动画制作软件比较多，但在二维动画制作软件中，缺乏一个被用户广为使用的软件，这在大量的ＰＣ＋Ｗｉｎｄｏｗｓ用户中特别明显。同时，二…     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.