PET核孔膜蚀刻速率影响因素的研究

核孔膜是通过重离子照射薄膜后进行化学蚀刻所得到的高性能过滤材料,蚀刻速率是影响高质量核孔膜制备的重要因素。本文探讨了不同蚀刻液浓度、温度以及重离子辐照能量对蚀刻速率的影响。利用140 MeV的32S离子在室温和真空条件下对4层堆叠的PET(polyethylene terephthalate)薄膜进行了辐照。在对辐照样品进行化学蚀刻期间采用电导法确定了径迹蚀刻速率Vt。结果表明:蚀刻速率与蚀刻温度呈指数相关,随蚀刻液浓度增加而线性增大;径迹蚀刻速率随能量损失率(离子能损)增大。研究确定,在入射32S能量为1.6 MeV·u-1时,NaOH浓度为1mol·L-1、蚀刻温度为85°C时最有利于形成圆柱形微孔。     

核孔膜的非常规蚀刻法

不对称蚀刻法的分析表明,在灵敏度不变时可以得到小孔径核孔膜。实验显示,由于孔径不均匀现象的制约,核孔膜的孔径可减小到1／2。温度梯度蚀刻法的分析表明,导通时间的减小与膜两面的温度差成正比,在实际条件下孔径减小到1／5。模拟计算表明,采用该方法可得到柱状孔核孔膜,但蚀刻过程很难控制。     

聚丙烯核孔膜化学蚀刻工艺研究

探讨了蚀刻剂中重铬酸钾浓度、硫酸浓度及蚀刻温度、蚀刻时间等因素对聚丙烯膜基体蚀刻速率的影响；建立了基体蚀刻速率与重铬酸钾浓度，硫酸浓度、蚀刻温度的数学关联式；并选择一定的蚀刻条件对辐照过的聚丙烯膜进行蚀刻，得到了预期孔径的聚丙烯核孔膜。     

核孔膜测定溶液浓度的原理,实验及应用前景

用实验证明,核孔膜可以用来测定溶液浓度,即测定溶液中溶质的含量。这一发展,为核孔膜在工业上广泛应用开辟了新的领域。本文对用核孔膜测定溶液浓度的原理、方法、精确度、适用范围和应用前景进行阐述。     

聚碳酸酯和聚酯核孔膜的性能研究

聚碳酸酯(Polycarbonate,PC)和聚对苯二甲酸乙二酯(Polyethylene Terephthalate,PET)薄膜因其可被碱性溶液有效刻蚀而被用于核孔膜材料。采用11.4 MeV·u-1的Au离子和20 MeV·u~(-1)的Kr离子分别辐照PC及PET薄膜,然后经NaOH溶液蚀刻,制得膜孔径分别为20-400 nm和100-700 nm的PC和PET核孔膜。扫描电子显微镜(Scan Electron Microscope,SEM)和气-液排除法等表征和测试结果显示孔密度与辐照剂量有关;蚀刻时间越长,膜孔径越大,实验制备的核孔膜孔分布越均匀。被辐照后的PET膜亲水性比PC膜高。在0.15 MPa和室温下,水溶液中的牛血清白蛋白(Bovine Serum Albumin,BSA)可被不同孔径的PET核孔膜有效截留;膜孔径越小,截留率越高,过滤所需压力越大,膜越易被污染。     

核孔膜研究装置中的电子学线路

本文提出了一个核孔膜研究实验装置，并重点介绍了它们为该实验装置设计研制的电子学线路。     

电导法研究紫外光预辐照对核孔膜径迹蚀刻的影响

利用紫外光辐照聚碳酸酯（PC）离子径迹膜,研究光辐照对于核孔膜蚀刻过程的影响。实验结果显示,紫外光照射对核孔膜的蚀刻有着重要的作用,它可以有效地增加径迹的蚀刻速率,并且径迹蚀刻速率随紫外光照时间的增加呈线性增长关系,此现象是由于光降解作用引起的。本文还介绍了用于监测核孔膜蚀刻过程的电导测量方法,利用此方法可以得出核孔膜径迹蚀刻速率、孔径随蚀刻时间变化等关系。     

聚酯膜固体径迹探测器的最佳蚀刻条件

为研究12 μm厚聚酯膜固体径迹探测器的最佳蚀刻条件,方便固体径迹火化计数器的性能研究,本文通过三种不同的实验方法,对厚度为12μm的聚酯膜蚀刻条件进行分析研究.实验结果表明,12 μm厚聚脂膜的最佳蚀刻条件;温度60C,浓度6mol/L的KOH溶液,蚀刻时间为3h.     

核孔膜在含铀气溶胶微粒微观定位中的应用

在核诊断和核保障技术环境样品分析中,对含铀气溶胶微粒(极少的微米级粒子)进行元素和同位素分析是十分重要的。扫描电镜(SEM)和二次离子质谱仪(SIMS)的联用是公认的微粒同位素分析技术路线之一,它需要用扫描电镜对样品垫上感兴趣的微粒进行快速查找和准确定位,最终用SIMS对同一微粒进行再定位和同位素分析。本文报导在直径为25mm的石墨垫片上利用核孔膜作参考标记并进行SEM-SEM微粒精确定位的试验方法和结果。研究表明,用核孔膜作定位标记,平均定位偏离为(5.8±2.6)μm,其精确度不亚于国外采用的其它方法。     

聚磷酸酯蚀刻产物在NaOH溶液中的浓度对体蚀刻速度及相对灵敏度的影响

本文研究聚碳酸酶C_(pc)(国产)和L_(pc)(Lexan)蚀刻产物在温度60、70℃和6、7mol/l NaOH溶液中的浓度对体蚀刻速度V_g及相对灵敏度(V_T/V_g)的影响。L_(pc)和C_(pc)的V_g值随它们的蚀刻产物浓度的上升而增加,在蚀刻产物浓度达到某一值后V_g趋于平稳,并保持此最大值;而V_T/V_g值基本上不随蚀刻产物浓度而变化。     

Comparative studies of etching mechanisms of CR-39 in NaOH/H2O and NaOH/ethanol

The bulk etch rate for CR-39 in NaOH/ethanol was faster than those in aqueous solution of NaOH (NaOH/H₂O). Furthermore, a layer of precipitate always accumulates on the surface of CR-39 detector during etching in NaOH/ethanol, which is absent during etching in NaOH/H₂O. In the present work, mass spectrometry results have shown that the same etched products are present in the etchants of NaOH/H₂O and NaOH/ethanol after etching of CR-39. This shows that CR-39 has the same etching mechanism in both etchants. These etched products support the etching mechanism of scission of the carbonate ester bond in CR-39 by the hydroxide ion through basic hydrolysis of ester. The difference in the bulk etch rates can be explained in terms of the solubility of the etched products in the etchants. FTIR analyses of the solute formed from the etchants show the formation of allyl alcohol and carbonate during etching in both etchants. The FTIR spectra of the precipitate formed at the surface of CR-39 detectors during etching in NaOH/ethanol has also shown that sodium carbonate is present in the precipitate. Finally, XRD analyses of the solute formed from the etchants show the formation of sodium bicarbonate and sodium carbonate in the etchant of NaOH/H₂O after etching and the formation of the mineral natrite and thermonatrite in the etchant of NaOH/ethanol as well as in the layer of precipitate on the surface of the CR-39 detector formed during etching in NaOH/ethanol.     

Makrofol薄膜蚀刻特性研究

本文研究了Makrofol KG膜的总体蚀刻特性。研究结果表明,体蚀刻速度与蚀刻温度遵守Arr-henius方程V_b=a·e~(-E/KT),其中,体激活能E=0.66±0。02eV。体蚀刻速度与蚀刻浓度的关系为V_b=an~b,在1—10mol/l NaOH溶液中,b=2.02。     

Initial stage of etching through pores in PET films irradiated by Ar ions

Changes in the diameters and depths of pores were studied in the process of etching polyethyleneterephthalate (PET) films irradiated by Ar ions having an energy of 1 MeV/n. Information about the pore diameters and lengths was obtained with JSM-840 and TEM-125 electron microscopes. The solutions of NaOH (0.5 mol/dm³ and 2 mol/dm³) were used as etchants. Etching was performed at 55 °C and 70 °C. Two methods of sensitization were used: the first one by UV illumination and treatment in dimethylformamide (DMF), the second method just by UV illumination. It was found that the diameters and the depths of pores are larger in films treated according to the first sensitization method. Etching duration (breakthrough time), which leads to through-going pores of the minimal radius, was established. After sensitization according to the first method the track etch rate grows quicker than the transverse etch rate. This gives a possibility to obtain through pores with diameters ranging from 50 nm to several micrometers.     

高能Ar离子辐照聚酯薄膜潜径迹蚀刻

通过９００ＭｅＶＡｒ离子辐照聚酯（ＰＥＴ）薄膜潜径迹蚀刻过程的研究，给出了表征ＰＥＴ聚合物材料特性的径迹可蚀刻性的能损阈值（ｄＥ／ｄＸ）ｃ并通过不同方法讨论了ＰＥＴ膜的径迹蚀刻速度和体蚀刻速度。     

电子束刻蚀聚碳酸酯制备微孔分离膜

以电子束刻蚀技术和聚碳酸酯(Polycarbonate,PC)材料本身的辐照裂解特性,结合微孔掩膜和溶液氧化腐蚀的方法,成功制备了具有规则垂直孔道的PC微孔分离膜。用乌氏粘度计、凝胶渗透色谱仪、仪和傅里叶红外光谱分析仪表征辐照PC的结构和性能变化。结果表明,PC材料的黏均相对分子量、数均分子质量、玻璃化温度、黏均聚合度均随吸收剂量的增加而下降;红外分析表明PC在电子束照射下发生主链断裂;动力学分析表明其辐照降解属于无规降解类型,为电子束刻蚀制备PC微孔分离膜技术提供了理论依据。     

电子束蚀刻聚酰亚胺制备微孔分离膜的研究

以电子束蚀刻技术,结合微孔掩膜和溶液氧化腐蚀的方法,制备聚酰亚胺(Polyimide,PI)微孔分离膜.通过称重法,讨论了吸收剂量、腐蚀时间和腐蚀温度等因素对PI基膜蚀刻和腐蚀的影响,结果表明,随着吸收剂量、腐蚀温度和腐蚀时间的增加,PI基膜更容易被腐蚀;IR检测结果表明,辐照导致PI分子化学键断裂,分子量变小,是辐照PI腐蚀失重率增加的原因;试验对微孔铅和铁掩膜遮蔽的PI基膜进行电子辐照,再用浓硫酸和重铬酸钾混合溶液腐蚀辐照PI基膜,得到具有规则且垂直孔道的聚酰亚胺微孔分离膜.     

用流速法测量核孔滤膜的孔径

核孔滤膜是七十年代发展起来的一种新型过滤膜,其孔形规则、孔径均匀、膜薄而透明、有良好的热稳定性和化学稳定性。它可以对真菌和疫苗进行分离和浓缩;对血液、脑脊髓液等体液进行细胞学诊断;在除去液体、气体中的固体颗粒、杂质获得超净试剂方面也有十分重要的应用价值。     

Surface properties of Al-doped ZnO thin film before and after CF4/Ar plasma etching

Al-doped ZnO (AZO) is considered as an alternative to transparent conductive oxide materials. Patterning and achieving a stable surface are important challenges in the development and optimization of dry etching processes, which must be overcome for the application of AZO in various devices. Therefore, in this study, the etch rate and surface properties of an AZO thin film after plasma etching using the adaptive coupled plasma system were investigated. The fastest etch rate was achieved with a CF₄/Ar ratio of 50:50 sccm. Regardless of the ratio of CF₄ to Ar, the transmittance of the film in the visible region exceeded 80%. X-ray photoelectron spectroscopy analysis of the AZO thin film confirmed that metal-F bonding persists on the surface after plasma etching. It was also shown that F eliminates O vacancies. Consequently, the work function and bandgap energy increased as the ratio of CF₄ increased. This study not only provides information on the effect of plasma on AZO thin film, but identifies the cause of changes in the device characteristics during device fabrication.