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1.
在镜像投影曝光机上使用相移掩膜提高解像力的初步研究   总被引:3,自引:3,他引:0  
实现高PPI(单位面积像素个数),需要更细的线宽和更窄的间距,这往往受到光刻设备解像力的限制,本文对基于不改造镜像投影曝光设备而提高光刻解像力进行研究。用半导体工艺模拟以及器件模拟软件模拟分析了离焦量为0时,相位移掩膜和传统掩膜下2.5μm等间隔线的光强分布。根据设备参数模拟分析离焦量为15、30μm时通过掩膜得到的光刻间距情况,最后,实际比较测量了相同条件下各自曝光剂量范围和切面坡度角。实验结果表明:相位移掩膜能使镜像投影曝光机分辨力以下间距(线宽)的工艺容限增大1倍,并使相应曝光量下间距(线宽)的分布更集中,从而增加细线化的稳定性。使用相位移掩膜能提高镜像投影曝光机的解像力。  相似文献   

2.
首次在国内开展基于101.6mm(4英寸)砷化镓晶圆的0.13μm相移掩膜光刻工艺研究。通过与传统的二进制掩膜技术比较,分析讨论了相移掩膜技术提高光刻系统分辨率以及改善光刻形貌的原理。通过光刻仿真软件模拟相移掩膜和二进制掩膜工艺,结果表明相移掩膜工艺对应的光学成像质量明显优于二进制掩膜工艺。进一步的实验表明,相移掩膜的曝光范围要高于二进制掩膜,同时相移掩膜工艺的线宽均匀性以及光刻剖面形貌也是要优于二进制掩膜。通过以上的研究,表明相移掩膜技术可以提高光刻系统分辨率以及改善光刻形貌。  相似文献   

3.
通过光刻掩膜技术、电阻热蒸发沉积技术制备电磁屏蔽窗口金属网栅薄膜,研究金属网栅的红外透射率和电磁屏蔽效能。为了能有效地屏蔽电磁波,使用CST Studio Suite电磁仿真软件设计不同周期、线宽的金属网栅,采用光刻掩膜技术、电阻热蒸发技术在双面抛光单晶硅基片上完成线宽为30μm,周期分别为350μm、450μm、550μm、650μm、750μm的金属网栅薄膜的制备。采用真空型傅立叶红外光谱仪和矢量网络分析仪分别对不同结构参数金属网栅薄膜的光谱特性和电磁屏蔽效能进行测试。结果:实现在双面抛光单晶硅基底上制备的网栅在12~18 GHz频段内,网栅的电磁屏蔽效能均达到12 dB以上。在3~5μm波段的透射率损失仅为8%。为了得到既具有高透光率,又具有强电磁屏蔽效能金属网栅薄膜需要合理设计金属网栅的线宽和周期。制备过程中网栅的光学-电学特性不仅受周期和线宽影响,掩膜板的加工精度、金属网栅的加工缺陷等也会造成不同程度的影响。  相似文献   

4.
对基于不改造应用于显示技术的曝光设备而提高光刻解像力进行研究。用半导体工艺模拟及器件模拟软件模拟分析了离焦量为0时,两种相位移掩膜和传统掩膜下4μm/2μm等间隔线的光强分布。并根据设备参数模拟分析离焦量为15、30μm时通过掩膜得到的光刻间距情况,最后实际比较测量了两种相位移掩膜在相同条件下各自曝光剂量范围和切面微观图。实验结果表明:自准直式边缘相移掩膜相比无铬相移掩膜在产能和良率方面更有优势。自准直式边缘相移掩膜更适合显示技术光刻细线化量产使用。  相似文献   

5.
日本东京应化工业开发了在不改变半导体批量生长线正在使用的i线步进器,最小线宽0.35μm工艺情况下,用原有的设备达到0.25μm以下工艺处理的超高分辨率阳性型光抗蚀剂“TSOR”。在i线步进器上可分辨  相似文献   

6.
在公司批量生产HDI板最小线宽/间距为75μm/75μm能力的基础上制作了线宽/间距为50μm/50μm的精细线路,试验用LDI曝光机曝光后再用正交试验法的L9(3^4)正交表安排了显影速度、蚀刻速度、显影压力、蚀刻压力四因素试验,选取线宽和蚀刻因子作为指标。通过对两个指标的综合分析,试验得到最佳工艺参数为:显影速度为4.0m/min,显影上压力为0.18MPa,下压力为0.15MPa,蚀刻速度为4.5m/min,蚀刻上压力为O.28MPa,下压力为0.25MPa。  相似文献   

7.
π相移光纤光栅制作方法的比较研究   总被引:1,自引:0,他引:1  
介绍了目前最常用的两种制作相移光纤光栅的方法,即分步曝光法(或遮挡法)和相位掩膜板移动法,对比分析了两种方法引入相移的物理机制,并利用传输矩阵法理论模型,数值模拟了两种制作方法下的相移光纤光栅透射谱,并分别进行了分布反馈光纤激光器(DFB-FL)的对比实验。结果表明,分步曝光法制作相移光纤光栅时,相移量与光栅中无曝光段的长度及纤芯折射率调制量均有关,难以精确控制相移量的大小,并且存在偏振模竞争问题;而相位掩膜板移动法通过压电陶瓷直线微动台控制掩膜板和光纤相对位移,在光栅中引入相位变换,可以将相移量控制在0~2π范围之内,更容易实现π相移光栅的制作。  相似文献   

8.
针对彩膜小尺寸高分辨率平板电脑产品的曝光基台色斑(Stage Mura)不良,对异常区域各项特性进行分析,发现Mura区域的黑矩阵(BM)的关键线宽(CD)和坡度角形貌与正常区存在异常。推测原因为曝光时,不良区域与正常区域曝光温度和曝光间隙存在差异,并进行试验验证。将曝光温度和曝光间隙进行调整试验后,使用扫描电子显微镜(SEM)分析黑矩阵关键线宽(BM CD)和坡度角,确认改善措施能减少正常区域和Mura区域BM CD和坡度角差异,不良发生率由7.2%降低为1.4%。进一步调整BM膜厚,从整体上弱化正常区域和Mura区域的透过率差异,最终基台色斑不良率降低至0.7%。  相似文献   

9.
随着智能手机和掌上电脑等超薄、超精细电子产品的大量问世,并为用户广泛接受,其电子产品的小型化、高密度化已成为必然。这些新型电子产品的出现驱动了PCB、HDI和IC载板向更高精度方向发展。据Prismark预测到2014年其线宽L/S精度将会小于10μm/10μm。这使得传统的DMD直接成像式LDI设备将会面临着精度、速度等性能上难以满足高精度的实际需求。阐述了一种新型的用于线宽L/S小于10μm/10μm高精度、高速量产型多光束激光动态LDI技术。该技术是采用了像空间调制器DMD微反射镜阵列对激光束进行图形调制,在成像光系统中增加了与DMD反射镜阵列对应的微透镜阵列图形处理系统,在保证曝光面积不变的前提下缩小了曝光点。其曝光光斑可小于3μm以下。其微透镜阵列采用了多层结构,具有远心光路、空间滤波功能,使曝光焦深可达几百微米到几毫米,提高了设备的实用性和稳定性。采用DMD多光束倾斜扫描技术,实现了更加精细及高密度的曝光图形。采用了阵列式多光引擎同步曝光实现高精度量产型LDI设备。  相似文献   

10.
1 曝光设备 由于集成电路由1M向16M进而向256M的方向发展,要求图形线宽跟着进一步缩小。以前较为流行的看法是光学曝光只能用到1μm,进入亚微米以后必须使用电子束等其它曝光技术,但是随着准分子激光光源的出现。光学曝光已突破1μm的禁区。因此,目前亚微米领域  相似文献   

11.
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.  相似文献   

12.
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.  相似文献   

13.
The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.  相似文献   

14.
The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.  相似文献   

15.
Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.  相似文献   

16.
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's.  相似文献   

17.
It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output(MIMO) communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.  相似文献   

18.
A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.  相似文献   

19.
A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.  相似文献   

20.
Call for Papers     
正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks  相似文献   

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