Effect of small additions of alloying elements on the properties of Sn-Zn eutectic alloy

Sn-Zn alloys have been considered for use as lead-free solders. Their poor wetting and oxidation resistance properties are the main obstacles that prevent them from becoming commercially viable solders. The effects of alloying elements, such as lanthanum, titanium, aluminum, and chromium, on oxidation resistance, wetting properties, and tensile properties of eutectic Sn-Zn solder are described herein. Results show the addition of alloying Ti, Al, and Cr can improve the oxidation resistance of Sn-9Zn solder. La, Ti, and Cr do not have much effect on the wetting properties, whereas Al worsens the wetting. Differential scanning calorimetry investigations reveal the solidus temperature of these solders to be ∼200°C. Addition of Cr improves ductility while maintaining tensile strength.     

陶瓷添加剂MnO2,Fe2O3,Li2CO3的热分析

陶瓷添加剂能使陶瓷材料具有良好的烧结状态和最佳的压电性能。本文作者采用Ｄｕｐｏｎｔ—２０００型热分析仪对常用添加剂ＭｎＯ２、Ｆｅ２Ｏ３、Ｌｉ２ＣＯ３进行了ＤＴＡ、ＴＧＡ分析，研究了几种物质在烧结过程中的物理、化学变化。     

Influence of Ag micro-particle additions on the microstructure, hardness and tensile properties of Sn-9Zn binary eutectic solder alloy

In this study, an addition of Ag micro-particles (8-10 μm) with a content in the range between 0 and 1.5 wt.% to Sn-9Zn eutectic solder, were examined in order to understand the effect of Ag additions as the particulate reinforcement on the microstructural and mechanical properties as well as the thermal behavior of the newly developed composite solders. Here, an approach to prepare a micro-composite solder alloy by mixing Ag micro-particles with a molten Sn-Zn solder alloy was developed. The composite solder was prepared by mechanically mixing Ag micro-particles into the Sn-9Zn alloy melt to ensure a homogeneous distribution of the reinforcing particles. The distribution of the Ag micro-particles in the matrix was found to be fairly uniform. The Ag particles reacted with the Zn and formed ε-AgZn₃ intermetallic compounds (IMC) in the β-Sn matrix. It was found that the more Ag particles added to the Sn-9Zn solder, the more Ag-Zn compound formed. In the Sn-9Zn/XAg composite solder, the microstructure was composed of AgZn₃ IMC and α-Zn phase in the β-Sn matrix. Interestingly, as the Ag particles in the composite solder increased, the α-Zn phase was found to be depleted from the matrix. The average tensile strength of the composite solders increased with the Ag micro-particles content up to a certain limit. Beyond this limit, the addition of Ag particles actually decreased the strength.     

激光熔覆层凝固特征与凝固组织控制研究

用5kW横流CWCO2激光器在1Cr18Ni9Ti与Cr18Ni12Mo3Ti阀门零件上熔覆NiCrFeBSi合金，得到了厚2～3.5mm，表面平整光滑，组织细密的合金熔覆层，并结合熔覆试验，分析探讨了激光熔覆层快速凝固过程中的凝固特征，凝固组织及组织控制方法。     

快速退火对Pt/BST/Pt电容器结构和性能的影响

采用脉冲激光沉积(PLD)法在Pt/Ti/SiO2/Si(001)基片上制备了Ba0.6Sr0.4TiO3(BST)薄膜,对Pt/BST/Pt电容器在空气中进行400℃快速退火(RTA)处理,研究了快速退火对Pt/BST/Pt电容器的结构和性能的影响。结果表明:快速退火虽然对BST薄膜的结晶质量影响较小,但却极大改善了Pt/BST/Pt电容器的电学性能。当测试频率为100kHz、直流偏压为0V时,介电损耗从快速退火前的0.07减小到0.03,介电常数和调谐率略有增加。快速退火后负向漏电流过大现象得到了明显抑制,正负向漏电流趋于对称,在300×103V/cm电场强度下,漏电流密度为4.83×10–5A/cm2。     

Influence of dry and wet cleaning on the properties of rapid thermal grown and deposited gate dielectrics

Various silicon surface cleaning processes for rapid thermal in-situ polysilicon/ oxide/silicon stacked gate structures have been evaluated. Metal-oxide-semiconductor capacitors were fabricated to assess the effects of cleaning on the quality of gate oxide structures produced by both rapid thermal oxidation (RTO) and rapid thermal chemical vapor deposition (RTCVD). Excellent electrical properties have been achieved for both RTO and RTCVD gate oxides formed on silicon wafers using either an ultraviole/zone (UV/O₃) treatment or a modified RCA clean. On the contrary, poor electrical properties have been observed for RTO and RTCVD gate oxides formed on silicon wafers using a high temperature bake in Ar, H₂, or high vacuum ambient. It has also been found that the electrical properties of the RTCVD gate oxides exhibit less dependence upon cleaning conditions than those of RTO gate oxides. This work demonstrates that initial surface condition prior to gate oxide formation plays an important role in determining the quality of RTO and RTCVD gate oxides.     

热分析技术在无机材料研究中的某些应用

介绍了热分析技术在无机材料研究中的某些应用，并就国内最近应用热分析技术开展的一些研究工作作了简单介绍     

Annealing effect on structural and optical properties of Se87.5Te10Sn2.5 thin films

Thin films of Se_87.5Te₁₀Sn_2.5 were prepared by vacuum thermal evaporation technique. Various optical constants were calculated for the studied composition. The mechanism of the optical absorption follows the rule of direct transition. It was found that the optical energy gap (E_g) decreases from 2.26 to 1.79 eV with increasing the annealing temperature from 340 to 450 K. This result can be interpreted by the Davis and Mott model. On the other hand, the maximum value of the refractive index (n) is shifted towards the long wavelength by increasing the annealing temperature. In addition, the high frequency dielectric constant (ε_L) increased from 31.26 to 48.11 whereas the ratio of the free carriers concentration to its effective of mass N/m^⁎ decreased from 4.3 to 2.09 (×10⁵⁷ (m⁻³ Kg⁻¹)). The influence of annealed temperature on the structure was studied by using the X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD studies show that the as-deposited films are amorphous in nature, but the crystallinity improved with increasing the annealing temperature. Furthermore the particle size and crystallinity increased whereas the dislocation and strains decreased with increasing the annealing temperature. SEM examination showed that the annealing temperature induced changes in the morphology of the as-deposited film.     

快速热退火温度对纳米晶氢-硅薄膜及其p-n结性能的影响

采用快速热退火(RTA)对热丝化学气相沉积HWCVD制 备的非晶氢-硅(a-Si:H)薄膜进行晶化处理,并在此基础上制备了 纳米晶氢-硅(nc-Si:H)薄膜p-n结。利用拉曼(Raman)光谱、X射线衍射(XRD)、 扫描电子显微镜(SEM)和分光光 度计研究了所制备(nc-Si:H)薄膜的结构、光学性能与退火温度的关系;同时, 研究了不同RTA条 件下制备p-n结的整流特性随温度变化的规律。研究发现,随RTA温度由700℃升高至 1100℃,薄膜的晶化率由46.3%提高到96%,拉曼峰半高宽(FWHM)由19.7cm－1降低至7. 1cm－1。当退火 温度为700℃时,薄膜的XRD谱中只有一个较弱的Si(111)峰;当退火 温度高于900 ℃时,薄膜 的XRD谱中除Si(111)峰外,还出现了Si(220)、Si(311)峰。同时,随退火温度的升高,薄膜 的禁 带宽度由1.68eV升高至2.05eV。由于禁带宽 度的增加,相应的p-n结最高工作温度也由180℃升高至300℃。     

Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor

The origin of the radiative recombination leading to yellow luminescence (YL) has been elucidated by the study of luminescence properties of GaN films grown with two different gas feeding methods. GaN films were grown on a (0001) sapphire substrate in a rapid thermal chemical vapor deposition (RTCVD) reactor. GaN films emitted two different luminescence energies, 2.2 and 3.47 eV, depending on the introducing position of hydrogen gas in the growth reactor. The distribution of the TMGa flow and gas phase reactions in the reactor were investigated to understand the effect of the gas feeding methods on the optical properties of GaN films. The results suggest that YL is related to Ga vacancies in the grown films.     

Effect of microalloying on the creep strength and microstructure of an eutectic Sn-Pb solder alloy

The present research aims to improve the creep strength of Sn-Pb eutectic solder by the addition of small amount of effective elements, such as Sb, Ag, Cu, and Ga, which are selected by preliminary experiments and analysis. Creep tests were conducted at the stress and temperature range of 5 N/m to 15 N/m m² and 313 K to 378 K, respectively. The microalloying treatment increased significantly the creep-rupture time by one order at the same condition of creep stress and temperature, comparing with that of the regular Sn-Pb eutectic solder alloy. Microstructural observation indicated that the excellent creep properties are obtained by the particles dispersion hardening due to the combined addition of the microalloying elements.     

Halogen lamp rapid thermal annealing of Si- and Be-implanted In0.53Ga0.47As

Halogen lamp rapid thermal annealing was used to activate 100 keV Si and 50 keV Be implants in In_0.53Ga_0.47As for doses ranging between 5 × 10¹²−4 × 10¹⁴ cm⁻². Anneals were performed at different temperatures and time durations. Close to one hundred percent activation was obtained for the 4.1 × 10¹³ cm⁻² Si-implant, using an 850° C/5 s anneal. Si in-diffusion was not observed for the rapid thermal annealing temperatures and times used in this study. For the 5 × 10¹³ cm⁻² Be-implant, a maximum activation of 56% was measured. Be-implant depth profiles matched closely with gaussian profiles predicted by LSS theory for the 800° C/5 s anneals. Peak carrier concentrations of 1.7 × 10¹⁹ and 4 × 10¹⁸ cm⁻³ were achieved for the 4 × 10¹⁴ cm⁻² Si and Be implants, respectively. For comparison, furnace anneals were also performed for all doses.     

Reliability investigation and interfacial reaction of ball-grid-array packages using the lead-free Sn-Cu solder

The interfacial reactions between two Sn-Cu (Sn-0.7Cu and Sn-3Cu, wt.%) ball-grid-array (BGA) solders and the Au/Ni/Cu substrate by solid-state isothermal aging were examined at temperatures between 70°C and 170°C for 0 to 100 days. For the Sn-0.7Cu solder, a (Cu,Ni)₆Sn₅ layer was observed in the samples aged at 70–150°C. After isothermal aging at 170°C for 50 days, the solder/Ni interface exhibited a duplex structure of (Cu,Ni)₆Sn₅ and (Ni,Cu)₃Sn₄. For the Sn-3Cu solder, only the (Cu,Ni)₆Sn₅ layer was formed in all aged samples. Compared to these two Sn-Cu solders, the Cu content in the (Cu,Ni)₆Sn₅ layer formed at the interface increased with the Cu concentration in the Sn-xCu solders. And, the shear strength was measured to evaluate the effect of the interfacial reactions on the mechanical reliability as a function of aging conditions. The shear strength significantly decreased after aging for 1 day and then remained nearly unchanged by further prolonged aging. In all the samples, the fracture always occurred in the bulk solder. Also, we studied the electrical property of Cu/Sn-3Cu/Cu BGA packages with the number of reflows. The electrical resistivity increased with the number of reflows because of an increase of intermetallic compound (IMC) thickness.     

A study of the effect of ultraviolet (UV) and vacuum ultraviolet (VUV) photons on the minority carrier lifetime of single crystal silicon processed by rapid thermal and rapid photothermal processing

Minority carrier lifetime is an efficient indicator of defect levels present in the starting material as well as process and equipment induced defects. By employing rapid thermal processing (RTP) and rapid photothermal processing (RPP) as the thermal processing techniques, we have studied the effect of ultraviolet (UV) and vacuum ultraviolet (VUV) photons on the bulk minority carrier lifetime of phosphorous doped and undoped single crystal silicon wafers. For both diffused and undiffused wafers, we have observed an enhancement in the minority carrier lifetime when UV and VUV photons are used in conjunction with the samples processed without the use of UV and VUV photons. The effect of ramp rates on the minority carrier lifetime and the significance of optimized thermal cycles have also been studied in this paper. A possible explanation based on the dependence of diffusion coefficient on the photo spectrum of light source is also given in this paper.     

纳米CeO2对激光熔覆Ni基合金层组织与性能的影响

为了研究纳米CeO2颗粒对激光熔覆层的组织和性能的影响,在Q235钢基体上制备了加入不同量纳米CeO2的Ni基合金熔覆层,利用OLMPUS PME-3型光学显微镜,XD-3A型X射线衍射仪,HV-1000型显微硬度计,MM-200型环-块磨损试验机和扫描电镜等对激光熔覆层显微组织、相结构、显微硬度、磨损性能和磨损机理进行了研究。结果表明,在激光熔覆层中添加纳米CeO2能够细化组织,改变凝固组织的形态。当加入质量分数为1.5%的纳米CeO2时,熔覆层凝固组织形态为等轴树枝晶;生成了含Ce的新相Ce2Ni21B6,明显提高了熔覆层的显微硬度和耐磨性;熔覆层磨损由严重磨损转化为轻微磨损。但是加入过量的纳米CeO2,硬度反而降低。     

Ar气氛下快速退火对CZ-Si单晶中FPD的影响

将Si片经Secco腐蚀液腐蚀,用光学显微镜和原子力显微镜(AFM)对CZ-Si单晶中的流动图形缺陷(FPD)的形貌、分布及结构进行了研究,对Si片进行了湿氧化处理并采用较新的快速退火方法(RTA),在Ar气氛下对Si片进行热处理,研究了退火温度和退火时间对FPD缺陷密度的影响.结果表明,FPDs缺陷在1 100 ℃以下非常稳定;但是在1 100 ℃以上的温度,尤其在1 200℃对Si片进行RTA处理后,Si片中FPD的密度大大降低,而且随着的退火时间的延长,密度不断下降.     

Optical and microstructural characterization of the effects of rapid thermal annealing of CdTe thin films grown on Si (100) substrates

The effects of rapid thermal annealing (RTA) on CdTe/Si (100) heterostructures have been studied in order to improve the structural quality of CdTe epilayers. Samples of CdTe (111) polycrystalline thin films grown by vapor phase epitaxy (VPE) on Si (100) substrates have been investigated. The strained structures were rapidly thermally annealed at 400°C, 450°C, 500°C, 550°C, and 600°C for 10 sec. The microstructural properties of the CdTe films were characterized by carrying out scanning electron microscopy (SEM), x-ray diffraction (XRD), and atomic force microscopy (AFM). We have shown that the structural quality of the CdTe epilayers improves significantly with increasing annealing temperature. The optimum annealing temperature resulting in the highest film quality has been found to be 500°C. Additionally, we have shown that the surface nucleation characterized by the island size distribution can be correlated with the crystalline quality of the film.     

电场作用下金属元素对W-Cu合金快速烧结的影响

采用Gleeble—3500D热模拟机,在电场和大热流密度条件下,研究了金属元素(Fe、Co和Ni)对W-20%Cu合金电场快速烧结的影响。结果表明:经800℃烧结3min,可获得晶粒较细小、显微组织较均匀的烧结体;添加金属元素能有效抑制晶粒长大。质量分数为0.35%的Fe、Ni和Co分别使其平均晶粒尺寸由1.0μm减小到0.6,0.6和0.3μm。金属元素的加入,对烧结体的致密化和硬度不利。     

Effects of solder alloy constitutive relationships on impact force responses of package-level solder joints under ball impact test

The ball impact test was developed as a package-level measure for the board-level drop reliability of solder joints in the sense that it leads to fracturing of solder joints around intermetallics, similar to that from a board-level drop test. We investigated numerically the effects of constitutive relationships of solder alloy on transient structural responses of a single package-level solder joint subjected to ball impact testing. This study focused on the characteristics of the ascending part of the impact force profile. According to the piecewise linear stress-strain curve obtained for the Sn-4Ag-0.5Cu solder alloy, parametric studies were performed by varying either segmental moduli or characteristic stresses of the curve at fixed ratios, with regard to the lack of available rate-dependent material properties of solder alloys.     

Ni(Pt)Si硅化物温度稳定性的研究

对比研究了夹层结构N i/P t/N i分别与掺杂p型多晶硅和n型单晶硅进行快速热退火形成的硅化物薄膜的电学特性。实验结果表明,在600~800°C范围内,掺P t的N iS i薄膜电阻率低且均匀,比具有低电阻率的镍硅化物的温度范围扩大了100~150°C。依据吉布斯自由能理论,对在N i(P t)S i薄膜中掺有2%和4%的P t样品进行了分析。结果表明,掺少量的P t可以推迟N iS i向N iS i2的转化温度,提高了镍硅化物的热稳定性。最后,制作了I-V特性良好的N i(P t)S i/S i肖特基势垒二极管,更进一步证明了掺少量的P t改善了N iS i肖特基二极管的稳定性。