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1.
0.56GeS2–0.24Ga2S3–0.2KX(X = Cl, Br, I) chalcohalide glasses were prepared and their third-order optical non-linearities χ(3) have been studied systematically using the femtosecond time-resolved Optical Kerr Effect technique at wavelength of 800 nm. In this system, 0.56GeS2–0.24Ga2S3–0.2KCl glass shows the largest χ(3) (1.82 × 10−13 esu), but 0.56GeS2–0.24Ga2S3–0.2KBr glass has the fastest optical non-linear response time in subpicosecond domain (about 340 fs), which is due to the ultrafast distortion of the electron clouds surrounding the balanced position of Ge, Ga, S, K and Br atoms. The local hyperpolarizability determining non-linear optical response are determined by the partially ionic bonds originating from Ge(Ga)–S bonds and halogen valence bonds. They show great potential applications on the glass-based optoelectronic devices like optical switching.  相似文献   

2.
Novel GeS2–Ga2S3–AgCl chalcohalide glasses had been prepared by melt-quenching technique, and the glass-forming region was determined by XRD, which indicated that the maximum of dissolvable AgCl was up to 65 mol%. Thermal and optical properties of the glasses were studied by differential scanning calorimetry (DSC) and Visible-IR transmission, which showed that most of GeS2–Ga2S3–AgCl glasses had strong glass-forming ability and broad region of transmission (about 0.45–12.5 μm). With the addition of AgCl, the glass transition temperature, Tg decreases distinctly, and the short-wavelength cut-off edge (λvis) of the glasses also shifts to the long wavelength gradually. However, the glass-forming ability of the glass has a complicated evolutional trend depended on the compositional change. In addition, the values of the Vickers microhardness, H v , which decrease with the addition of AgCl, are high enough for the practical applications. These excellent properties of GeS2–Ga2S3–AgCl glasses make them potentially applied in the optoelectronic field, such as all-optical switch, etc.  相似文献   

3.
Chalcogenide glasses in the GeS2-Ga2S3-Ag2S pseudo-ternary system were prepared by melt-quenching technique. The structural evolvement of the glasses was studied by Raman spectroscopy. The Raman results show that the addition of Ag2S involves the breaking of [S3Ge-GeS3] ethane-like units and the formation of Ag-S ionic bonds. The results of differential scanning calorimetry (DSC) show that the glasses have relatively high-glass transition temperatures and good thermal stabilities. These GeS2-Ga2S3-Ag2S glasses have a wide range of transmission approximately from 0.50 to 12.5 μm. In addition, with the method of Maker fringe, SHG was observed in the 0.9GeS2-0.05Ga2S3-0.05Ag2S glass irradiated by an electron beam. The value of second-order nonlinear optical susceptibility d is as large as 6.6 pm/V, and the poling mechanism of electron beam irradiation was also discussed in this work.  相似文献   

4.
Crystalline phases and second-order optical nonlinearities in crystallized glasses of (Na,K)NbGeO5 (i.e., xNa2O · (25−x)K2O · 25Nb2O5 · 50GeO2) are examined. The molar volume of the glasses decreases with increasing Na2O content, indicating that the glass structure of NaNbGeO5 glass is more compact compared with KNbGeO5 glass. The optical basicity of the glasses is 0.94–0.95, implying that chemical bonds among constituents ions are basically very ionic. (Na,K)NbGeO5 glasses exhibit a unique crystallization depending on the Na2O/K2O ratio. The main crystalline phase in crystallized NaNbGeO5 glass is the NaNbGeO5 phase. KNbGeO5 glass shows a prominent bulk nanocrystallization giving nanocrystals of the K3.8Nb5Ge3O20.4 phase. A glass with the composition of K3.8Nb5Ge3O20.4 also shows a bulk nanocrystallization. The crystallized glasses with K3.8Nb5Ge3O20.4 and NaNbGeO5 crystalline phases do not show a second harmonic generation (SHG) at room temperature. The nonlinear optical (Na,K)NbO3 phases showing a SHG are formed at the surface (5 μm) of crystallized glasses with x=15 and 20, giving an orientation of the (1 1 0) plane. The present study suggests the presence of mixed-alkali effect in the crystallization behavior of (Na,K)NbGeO5 glasses.  相似文献   

5.
By investigating the second-harmonic generation (SHG) of the series (100 − 2x)GeS2·xGa2S3·xPbI2 (x = 5, 10, 15, and 20) chalcohalide glass samples after thermal poling, it was found that there was an optimal poling temperature for each composition and there was also a relation between optimal poling temperature and glass transition temperature. With increasing x, the obtained second-order susceptibility χ(2) shows an increase first and then decrease, and the maximum was seen at x = 15. A dipole reorientation model and structural relaxation causing by Ga2S3 and PbI2 were proposed to explain the dependence of poling temperature on SH intensity for each composition and the presence of the maximum χ(2) in this chalcohalide glass series.  相似文献   

6.
SrAl2O4: Eu2+, Dy3+ nanometer phosphors were synthesized by detonation method. The particle morphology and optical properties of detonation soot that was heated at different temperatures (600–1100 °C) had been studied systematically by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Results indicated SrAl2O4: Eu2+, Dy3+ nanometer powders in monoclinic system (a = 8.442, b = 8.822, c = 5.160, β = 93.415) can be synthesized by detonation method, when detonation soot was heated at 600–800 °C. The particle size of SrAl2O4: Eu2+, Dy3+ is 35 ± 15 nm. Compared with the solid-state reaction and sol-gel method, synthesis temperature of the detonation method is lower about 500 and 200 °C respectively. After being excited under UN lights, detonation soot and that heated at 600–1100 °C can emit a green light.  相似文献   

7.
Mn2P2O7 polyhedral particles were synthesized by simple and cost-effective method using manganese nitrate hydrate and phosphoric acid in the presence of nitric acid with further calcinations at the temperature of 800 °C. The crystallite size obtained from X-ray line broadening is 31 ± 13 nm for the Mn2P2O7. The X-ray diffraction and SEM results indicated that the synthesized nanoparticles have only the structure without the presence of any other phase impurities. The FT-IR and FT-Raman spectra show characteristic bands of the P2O74− anion. The UV–Vis–NIR spectrum confirms the octahedral coordination of Mn2+ ion.  相似文献   

8.
Novel chalcogenide glasses based on GeS2-In2S3-Sb2S3 system were prepared by conventional melt-quenching method and their physicochemical properties, e.g. glass transition temperature, density, and Vickers micro-hardness, were studied in detail. The results show that the thermal, mechanical, and optical properties depend largely on four-coordinated Ge or In entities and are sensitive to the variation of the connectivity in the GeS2-In2S3-Sb2S3 glass network. It is a promising chalcogenide glass system suitable for rare earth doping or crystallization of rare earth doped crystals, which aims at optical applications of IR optical amplifier or efficient solid state laser.  相似文献   

9.
The single phase of LiCo0.3−xGaxNi0.7O2 (x = 0, 0.05) was synthesized by a sol–gel method. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrochemical performance. The powders are homogeneous and have a good-layered structure. The synthesized LiCo0.25Ga0.05Ni0.7O2 exhibits better electrochemical performance with an initial discharge capacity of 180.0 mAh g−1 and a capacity retention of 95.2% after 50 cycles between 2.8 and 4.4 V at 0.2C rate. The study on the structural evolution of the material during the cycling shows that Ga-doping improves the structure stability of LiCo0.3Ni0.7O2 at ambient temperature and 55 °C. Meanwhile, Ga-doping not only suppresses the alternating current (AC) impedance of LiCo0.3Ni0.7O2 but also promotes the Li+ diffusion in LiCo0.3Ni0.7O2. Furthermore, thermal stability of the charged LiCo0.25Ga0.05Ni0.7O2 is improved, which may be attributed to the retard of O2 evolution in LiCo0.3Ni0.7O2 and the suppression of electrolyte oxidation during cycling by Ga-doping.  相似文献   

10.
Emission properties of Ho3+ at 2.0 μm and the energy transfer mechanism between Yb3+, Er3+ and Ho3+ ions in fluorophosphate glasses are investigated. The measured emission spectra show that the 5I7 → 5I8 transition of Ho3+ upon 980 nm laser diode excitation is strong. Judd–Ofelt intensity parameters (Ωλ, λ = 2, 4, 6), spontaneous transition probability (Arad), radiative lifetime (τr), absorption cross section (σa), stimulated emission cross section (σe) and FWHM ×  for the transition of Ho3+: 5I7 → 5I8 are calculated and discussed. The obtained results show that the present Yb3+/Er3+/Ho3+ triply-doped fluorophosphate glass can be identified to be a promising material at 2.0 μm emission.  相似文献   

11.
Microwave dielectric properties of Ba6−3xSm8+2xTi18O54 (x = 2/3) [BST] ceramics with the addition of 0–3 wt.% of various glasses have been studied. It has been found that the addition of 0.5 wt.% of the glasses decreases the sintering temperature by about 150 °C. In general, addition of 0.5 wt.% of Zn, Mg and Pb-based glasses deteriorate the quality factor, whereas aluminum and barium borosilicates do not decrease it considerably. The quality factor and dielectric constant decrease with increasing amount of glass. The temperature coefficient of resonant frequency shifts towards positive or negative depending on the composition of the glass. A glass–ceramic composite with a dielectric constant 64, Q × f nearly 8500 GHz and near to zero τf could be obtained at a sintering temperature of 1175 °C when 3–4 wt.% Al2O3–B2O3–SiO2 glass was added to BST ceramic. The Young's modulus decreases with increasing amount of glass, irrespective of the composition of glass.  相似文献   

12.
We examined the optical nonlinear properties of ZnO–Nb2O5–TeO2. The absorption and Raman spectra were measured, the third-order nonlinear susceptibility was determined by degenerated four wave mixing technique. The magnitude of χ(3) is about 1.0 × 10−12 esu, larger than that of silica glasses, and the optical bistability was observed in a Fabry–Perot cavity.  相似文献   

13.
The dielectric properties at microwave frequencies and the microstructures of nano (α + θ)-Al2O3 ceramics were investigated. Using the high-purity nano (α + θ)-Al2O3 powders can effectively increase the value of the quality factor and lower the sintering temperature of the ceramic samples. Grain growth can be limited with θ-phase Al2O3 addition and high-density alumina ceramics can be obtained with smaller grain size comparing to pure α-Al2O3. Relative density of sintered samples can be as high as 99.49% at 1400 °C for 8 h. The unloaded quality factors Q × f are strongly dependent on the sintering time. Further improvement of the Q × f value can be achieved by extending the sintering time to 8 h. A dielectric constant (r) of 10, a high Q × f value of 634,000 GHz (measured at 14 GHz) and a temperature coefficient of resonant frequency (τf) of −39.88 ppm/°C were obtained for specimen sintered at 1400 °C for 8 h. Sintered ceramic samples were also characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).  相似文献   

14.
Low-lying equilibrium geometric structures of aluminum-doped gallium cluster GanAl (n = 1–15) clusters obtained by an all-electron linear combination of atomic orbital approach, within spin-polarized density functional theory, are reported. The binding energy, dissociation energy, and stability of these clusters are studied with the three-parameter hybrid generalized gradient approximation (GGA) due to Becke-Lee–Yang–Parr (B3LYP). Ionization potentials, electron affinities, hardness, and static polarizabilities are calculated for the ground-state structures within the same method. The growth pattern for GanAl (n = 1–15) clusters is Al-substituted Gan + 1 clusters and it keeps the similar frameworks of the most stable Gan + 1 clusters except for Ga8Al and Ga13 Al clusters. The Al atom substituted the surface atom of the Gan + 1 clusters for n < 12. Starting from n = 12, the Al atom completely falls into the center of the Ga-frame. The Al atom substituted the center atom of the Gan + 1 clusters to form the Al-encapsulated Gan geometries for n > 12. The odd−even oscillations from GanAl (n = 5) in the dissociation energy, the second-order energy differences, the HOMO–LUMO gaps, the ionization potential, the electron affinity, and the hardness are more pronounced. The stability analysis based on the energies clearly shows the clusters from n = 5 with an even number of valence electrons are more stable than clusters with odd number of valence electrons.  相似文献   

15.
In this work, two kinds of GeS2–Ga2S3–CsI chalcogenide glasses had been fabricated in conventional meltquenching method, and these glasses express excellent transmittance (0.52–10.5?µm), low refractive index difference, high Raman gain and good thermal stability against crystallization. We designed a highly nonlinear step-index fibre consisting of a 72GeS2–18Ga2S3–10CsI core and a 73GeS2–15Ga2S3–12CsI cladding with the zero dispersion wavelength in near-infrared (<1?µm), and theoretically analysed the optical and nonlinear characteristics of this fibre in detail. Substantial simulation results revealed that wide ultra-flat supercontinuum broadening from the visible to the mid-infrared range can be achieved by pumping this fibre at 1064?nm.  相似文献   

16.
An ultra-high-temperature HfB2–SiC composite was successfully consolidated by spark plasma sintering. The powder mixture of HfB2 + 30 vol.% β-SiC was brought to full density without any deliberate addition of sintering aids, and applying the following conditions: 2100 °C peak temperature, 100 °C min−1 heating rate, 2 min dwell time, and 30 MPa applied pressure. The microstructure consisted of regular diboride grains (2 μm mean size) and SiC particulates evenly distributed intergranularly. The only secondary phase was monoclinic HfO2. The incorporated SiC particulates played a key role in enhancing the sinterability of HfB2. Flexural strength at 25 °C and 1500 °C in ambient air was 590 ± 50 and 600 ± 15 MPa, respectively. Fracture toughness at room temperature (RT) (3.9 ± 0.3 MPa √m) did not decrease at 1500 °C (4.0 ± 0.1 MPa √m). Grain boundaries depleted of secondary phases were fundamental for the retention of strength and fracture toughness at high temperature. The thermal shock resistance, evaluated through the water-quenching method, was 500 °C.  相似文献   

17.
Titanium aluminium carbide (Ti3AlC2) displays a unique combination of characteristics of both metals and ceramics coupled with an unusual combination of mechanical, electrical and thermal properties. In this research, the oxidation characteristics of Ti3AlC2 over the temperature range 500–900 °C were studied by synchrotron radiation diffraction (SRD) and secondary-ion mass spectrometry (SIMS) experiments which provided elemental and phase compositional depth profiles over this range. Evidence for the outward diffusion of Al during oxidation was shown for the first time by the complementary SIMS results, which suggested the existence of amorphous Al or aluminium oxide at low temperature oxidation. At 500 °C, only anatase-TiO2 was detected by SRD in addition to the parent Ti3AlC2. Transformation of anatase to rutile was observed at 600 °C and was completed by 900 °C. The crystalline phase α-Al2O3 was detected at 900 °C but not at lower temperatures.  相似文献   

18.
The structural phase transitions and relaxation processes of Cs2Co(SO4)2·6H2O and Cs2Zn(SO4)2·6H2O single crystals were investigated, with the phase transitions of both crystals being determined from NMR data. The spin–lattice relaxation time, T1, of the 133Cs nucleus in two crystals undergoes a significant change near the phase transition temperature, TC, and these changes coincide with the changes in the splitting of the 133Cs resonance lines. The variations in the temperature dependence for the splitting of the 133Cs resonance lines and T1 near TC are related to changes in the symmetry of surrounding Cs+. In addition, the 133Cs T1 of Cs2Co(SO4)2·6H2O, which contains paramagnetic ions, was found to be shorter than that of Cs2Zn(SO4)2·6H2O. This relaxation time is inversely proportional to the square of the magnetic moment of the paramagnetic ions. The differences between the 133Cs T1 of these compounds are probably due to the differences between the electronic structures of their metal ions.  相似文献   

19.
Crystal growth, thermal and optical characteristics of LiNd(WO4)2 crystal have been investigated. The LiNd(WO4)2 crystal up to Ø15 × 32 mm3 has been grown by Czochralski technique. The hardness is about 5.0 Mohs’ scale. The specific heat at 50 °C is 0.42 J g−1 K−1. The thermal expansion coefficient for c- and a- axes is 1.107 × 10−5 and 2.104 × 10−5 K−1, respectively. The absorption and fluorescence spectra and the fluorescence decay curve of LiNd(WO4)2 crystal were measured at room temperature. Some spectroscopic parameters such as the intensity parameters, the spontaneous transition probabilities, the fluorescence branching ratios, the radiative lifetimes and emission cross sections were estimated.  相似文献   

20.
The nonlinear optical properties of hydrazones substituted with different donor groups were studied using single beam Z-scan technique with nanosecond laser pulses at 532 nm. The nonlinear response in these molecules was found to increase with increase in the donor strength of the substituted group. The χ(3) value of these molecules is found to be of the order of 10−13 esu. The nonlinear refractive index (n2) of the samples is found to be negative and the largest value of n2 obtained for the strong donor-substituted molecule is −8.83 × 10−11 esu. All samples show good optical limiting behavior at 532 nm. The best optical limiting behavior was observed with the molecule substituted by a strong electron donor.  相似文献   

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