MeV金离子辐照SiO2光子晶体的光谱研究

低温条件下用不同剂量的MeV Au离子束,轰击由二氧化硅微球自组装形成的光子晶体.辐照前后,光子晶体的光学性质发生了明显的变化.主要体现为其光学反射谱的变化:反射带变宽并且中心位置向短波方向发生了迁移;另外,随着辐照剂量的上升,这些变化愈加明显.通过光谱曲线拟合分析,并结合SEM照片,文中给出了相应的理论解释.本文为用...     

沟道效应及其应用

沟道效应,亦称方向效应。在非晶体中,原子排列是无序的,所以具有一定能量的离子沿不同方向射入靶时,它的背向散射产额各向同性。但在单晶靶中,由于原子是有规则地按晶格点阵排列,从晶轴方向看,密集地排列着一列列原子列,且具有一定的对称性,所以当具有一定能量的离子从不同方向入射到单晶靶上时,由于入射离子与原子列上的原子作用情况不同,其背向散射产额不再是各向同性的了。当离子沿着晶轴方向入射时,只要离子入射方向与晶轴偏离的角度ψ足够小,离子就会在原子列对入射离子形成的屏蔽鞘里近似于成连续曲线前进,而不被散射出来,最后被阻止在晶体中。当上面的ψ角增大到某一角度ψ_c时,入射离子的背散射产额就会突然增加,如图1所示。这种入射离子在单晶靶上的背散射产额随入射角度而变化的现象,称沟道效应。原子列形成的通道称沟道。ψ_c称为临界角。     

非真空坩埚下降法生长CsI(Tl)晶体的闪烁性能

研究了用非真空铂坩埚下降法生长的CsI(Tl)晶体的在紫外和γ射线激发下的光致发光和光衰减特征,探索了CsI(Tl)晶体的发光强度和发光不均匀性与Tl离子含量和分布之间的关系以及改善晶体发光均匀性的措施.并对CsI(Tl)晶体在γ射线辐照下光输出随积分时间和辐照剂量的变化做了分析和讨论.实验表明,用这种方法所生长的CsI(Tl)晶体的发射波长、衰减时间和辐照硬度与其他方法生长的同类晶体相同.     

用正电子湮没寿命方法研究高能碳离子辐照纯镍的损伤分布

用42.SMeV/A的C~( 6)离子对叠层纯Ni样品进行辐照,剂量为1.33×10~(15)ions/cm~2。用正电子湮没寿命方法对辐照后的样品以4片为一组依次做测量,获得了样品中沿束流入射方向的损伤分布。实验所得到的损伤峰位置与理论计算结果基本符合。     

高能铁离子辐照单晶氧化铝产生的色心研究

室温下利用紫外-可见吸收光谱和荧光光谱技术对1.157GeV的56Fe离子注入辐照的单晶三氧化二铝(α-Al2O3)进行了测量分析,研究了辐照产生的阴离子空位的形成和演化规律.测量结果显示,高能Fe离子辐照产生了多种阴离子空位型缺陷,其中包括F、F 、F2 、F22 和F2心.随入射离子剂量的增加,各类缺陷的数量逐渐增大,并在高剂量时趋于饱和,但各类缺陷间的相对数量存在一定的比例,不随剂量的增加而有明显变化.用单离子饱和损伤模型对实验结果进行了拟合,获得各类色心的产生截面在40-90 nm2之间.与TRIM程序计算结果比较后发现,室温下辐照时阴离子单空位的产生速率约是由核能损过程在低温下产生缺陷速率的一半.     

LiF晶体辐照赋色的原理和应用

辐照赋色法也称辐射损伤法。在高能粒子辐照过程中，射线与晶体中的离子、原子或电子相互作用，产生点缺陷。由于这些缺陷在可见光波段有吸收峰，常常称之为颜色中心，简称色心。１　晶体辐照赋色的原理高能粒子与晶体中的离子或原子碰撞，发生能量转移。当高能粒子给予晶...     

BaF_2晶体辐射损伤的光谱研究

本文给出了BaF_2晶体被辐照前后的自发光谱、透射光谱和光激发光谱的变化。结果表明,经~(137)Cs和~(60)Co的γ射线辐照后的BaF_2晶体有较强的自发光,在310nm和650nm附近有两个峰。不同晶体的自发光谱不完全相同,同一块晶体的光谱形状不随受照剂量的大小而改变,但光的强度却与受照剂量有关;自发光随时间的衰减具有多种成分。辐照后BaF_2晶体的透射率下降,恢复缓慢,但紫外光照射可以加速透射率的恢复。290nm的光能激发出BaF_2的慢成分光,不同晶体的光激发发射光谱不完全相同,但辐照后无明显变化。     

内表面掺硫聚苯乙烯空心微球初步研制

以聚苯乙烯磺酸钠（PSS）为掺杂源,采用乳液微封装法制备内表面掺S的聚苯乙烯（PS）空心微球。XPS测量表明,微球内表面存在明显的S元素。利用低能X射线照相技术研究了不同掺杂源浓度下干燥时重力和表面张力对掺杂均匀性的影响,当掺杂源浓度降为0.2%时,得到了内表面掺杂S均匀的PS微球,微球直径为200～800μm,直径300μm的微球中掺杂层S原子面密度为8.57×10⁶μm^－2。     

炉内成球技术制备PS-PVA双层球

本工作研究采用炉内成球技术制备惯性约束聚变用靶丸聚苯乙烯-聚乙烯醇（PS-PVA）双层球。以乳液法制备PS微球，利用炉内成球技术在PS微球表面制备PVA层。研究表明，在PVA质量浓度为5％、炉内为空气、炉温473～523K条件下，可制备出PS-PVA双层球。双层球直径范围250～550μm，PVA层厚度范围1.0～2.4μm，PS-PVA双层球表面光洁度3～10nm，微球充氩气的最低温度350～360K，室温条件下对氘气的保气半寿命1～5h。     

DT中子下聚乙烯球中~(232)Th(n,2n)反应率的测量与分析

~(232)Th(n,2n)数据对于钍基反应堆研究十分重要,有必要针对其开展中子积分实验,因此,建立了聚乙烯球基准宏观装置,利用活化法在DT中子源下开展了测量~(232)Th(n,2n)反应率的中子积分实验。实验中分别采用了钍粉末以及钍片两种样品形态,以消除实验样品状态对实验结果的影响,将样品置于与D离子入射方向成0°的位置进行辐照,利用金硅面α探测器进行中子产额监测以及中子注量波动监测。辐照结束后,利用高纯锗谱仪离线测量反应产物231Th发射的能量为84.2 ke V的γ射线,得到~(232)Th(n,2n)反应率值。同时使用MCNP(Monte Carlo N Particle Transport Code)在数据库ENDF/B-Ⅶ.1、ENDF/B-Ⅶ.0、JENDL4.0下对实验进行了精确模拟,数据库JENDL4.0下的反应率计算结果与实验符合较好。     

Investigation of MeV-Cu implantation and channeling effects into porous silicon formation

P-type (1 1 1) silicon wafers were implanted by copper ions (2.5 MeV) in channeling and random directions using ion beam accelerator of the Atomic Energy Commission of Syria (AECS). The effect of implantation direction on formation process of porous silicon (PS) using electrochemical etching method has been investigated using scanning electron microscope (SEM) and photoluminescence (PL) techniques. SEM observations revealed that the size, shape and density of the formed pores are highly affected by the direction of beam implantation. This in turn is seen to influence the PL behavior of the PS.     

An ion optical decel system for oblique angular impact of low-energy ions on targets

A beam retardation system is presented for performing sputtering investigations with oblique angles of incidence of the ion beam. The system is designed for ion energies from 90 eV to 3 keV. For oblique ion impact it is necessary to have a field-free space in front of the target to avoid deflection of the beam in front of the tilted target due to an otherwise distorted electric field. A double-lens system yielding a parallel ion beam can meet this requirement if the lenses are movable in the beam direction. Such a system is described for a two-dimensional field. The system was tested with a tungsten ion beam in a tungsten self-sputtering investigation at an energy of 350 eV. For this ion-target combination a large angular dependence of the sputtering yield is expected. The results are compared with Monte Carlo calculations.     

Angular distribution of GaAs sputtered under oblique Cs bombardment

The angular distribution of Ga and As sputtered from Gallium Arsenide (1 0 0) by a Cs⁺ ion beam was experimentally measured through a collector technique allowing modifications of the energy and incidence angle of the ion beam. The impact energy was varied in the range of 2-10 keV and the angle of incidence from 30° to 60°.The angular distributions of emitted matter are determined by means of SIMS depth profiles. Our series of experiments show an evolution of the preferential direction of emission as well as the spreading around this direction in function of the characteristics of the ion beam.The second objective is the study of the evolution of the stoichiometry of the deposit in function of the emission angle. A decrease of the As/Ga ratio around the preferential direction of emission and an increase of this ratio for oblique emission are observed for different conditions of primary bombardment. Considering that the angular distribution depends on the depth of origin, our results suggest that the Cs⁺ bombardment changes the stoichiometry of the near-surface layers of the sample with an enrichment of As in the outmost layers while the sub-surface region is impoverished in As due to preferential sputtering.     

Detection of neutron-induced nuclear recoils in a low-pressuregaseous detector for particle dark matter searches

Recent neutron beam tests of a prototype detector to search for weakly interacting massive particles in the Galactic Halo are presented. The detector is an optically imaged time-projection chamber using various low-pressure gas mixtures. This technique potentially offers significant advantages for the detection of galactic dark matter in that it measures both the energy and direction of the nuclear recoil. In this paper we present measurements of ranges of neutron-induced nuclear recoils in different target gasses which are then used to determine the sensitivity of the device in a dark matter search. We also demonstrate the ability to accurately determine the direction of the recoil which can be used to discriminate signal from background using the expected diurnal modulation in the average recoil direction, which is unique to particle dark matter interactions     

Anisotropic deformation of polystyrene particles by MeV Au ion irradiation

MeV Au irradiation leads to a shape change of polystyrene (PS) and SiO₂ particles from spherical to ellipsoidal, with an aspect ratio that can be precisely controlled by the ion fluence. Sub-micrometer PS and SiO₂ particles were deposited on copper substrates and irradiated with Au ions at 230 K, using an ion energy and fluence ranging from 2 to 10 MeV and 1 × 10¹⁴ ions/cm² to 1 × 10¹⁵ ions/cm². The mechanisms of anisotropic deformation of PS and SiO₂ particles are different because of their distinct physical and chemical properties. At the start of irradiation, the volume of PS particles decrease, then the aspect ratio increases with fluence, whereas for SiO₂ particles the volume remains constant.     

Neutron-irradiated plastic scintillators

The polystyrene (PS)-based scintillator SCSN38, pure PS and pure polymethylmethacrylate (PMMA) have been irradiated with a beam of fast neutrons and with reactor neutrons. The radiation-induced permanent optical absorption coefficients after total annealing in air are compared with data for γ irradiations. The strong differences might be due to the high linear energy transfer (LET) of the recoil protons elastically scattered by the neutrons.     

低能Ar离子束辅助沉积Ag(111)薄膜

采用低能Ar离子束辅助沉积方法,在Mo/Si(100)基底上制备Ag膜。实验发现,用Ar离子束溅射沉积的Ag膜呈(111)择优取向。若在溅射沉积Ag膜的同时,用能量为500eV的Ar离子束沿衬底法线方向对Ag膜进行辅助轰击,当离子/原子到达比为0.06时,Ag膜呈(111)择优取向;当离子/原子到达比增大到0.18时,Ag膜呈(111)和(100)混合晶向。若Ar离子的入射角为35.26°,离子/原子到达比为0.06时,Ag膜呈(111)择优取向;当离子/原子比增大到0.18时,Ag膜呈(111)和微弱的(100)混合晶向。若Ar离子的入射角为54.7°,离子/原子到达比为0.06时,沉积的Ag膜呈很强的(111)择优取向。     

Si micro-turbine by proton beam writing and porous silicon micromachining

A 3D Si micro-turbine characterized by high aspect ratio vertical walls was formed by the combination of proton beam writing (PBW) and subsequent selective porous Si (PS) etching. Crystal damages generated by the implanted protons result in increased resistivity, thereby limit or even prevent the current to flow through the implanted area during electrochemical etching. Characteristic feature of the proposed process is that the shape of the micro electro-mechanical (MEMS) components is defined by two implantation energies. A higher energy is applied for defining the housing of the device while the lower energy is used to write the moving components. The implantation energies were selected such as to result appropriate difference between the two projected ranges, thereby providing structures with different height after development. The thickness of the walls of the moving component and the isotropic etching profile of the electrochemical PS formation was also taken into consideration. The electrochemical etching is driven until the sacrificial PS layer completely underetches the moving components, but the etch-front does not reach the bottom of the housing. Therefore, the dissolution of PS results in a ready-to-operate device with a released moving component embedded in the cavity of the housing. This work is the first demonstration of a silicon device containing a moving part made by proton beam writing.     

Energy distributions of charged and neutral hydrogen atoms backscattered from metal surfaces bombarded with 5 to 18 keV protons

Polycrystalline targets of Be, V, Nb, Mo and Ta have been bombarded with protons with primary energies in the range from 5 to 18 keV. The energy distributions of the charged and the neural particles backscattered at 135° with respect to the primary beam direction have been measured between 200 eV and 18 keV. The energy distribution of the neutrals has a pronounced maximum between 0.5 and 1 keV whose position does not depend on the primary energy or the target material, or the angle of emergence of the scattered particles. The energy distribution of the charged particles shows a less pronounced maximum between 1 and 1.5 keV. Only slight differences in the shape of the energy distributions have been observed for different target materials. The fractional number of charged backscattered particles increases from $\text{≈; 3\%}$ at 300 eV to $\text{≈; 40\%}$ at 18 keV.