IEC发布的新标准

Project CISPR 16-1-1 Ed. 3.0 （2009-09） Specification for radio disturbance and immunity measuring apparatus and methods - Part 1-1： Radio disturbance and immunity measuring apparatus - Measuring apparatus 无线电骚扰和抗扰度测量设备和方法-第1-1部分：无线电干扰和抗扰度测量设备-测量仪器     

欧盟发布的新标准

EN 55020：2007/IS1：2009（ 2009-06 ） Sound and television broadcast receivers and associated equipment - Immunity characteristics - Limits and methods of measurement     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Born-Huang approximation.The numerical results for sev-eral Ⅱ-Ⅵ and Ⅲ-Ⅴ compound systems are performed,and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs,GaPxAs1-x,ZnSxSe1-x,GaAsxSb1-x,GaxIn1-xP,and ZnxCd1-xS as examples are given and discussed.The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics,and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

各种规模集成电路

Y2000-62089-1-1 0009322超大规模集成电路系统与结构(含5篇文章)=VLSIsystems and architectures[会,英]//1999 IEEE Interna-tional Symposium on Circuits and Systems,Vol.1 of6.—1-1～1-22(PC)本部分共收录5篇论文。题名为:直接数字合成时钟脉冲发生器的抖动模型,数字信号处理(DSP)计     

Scalable modeling and comparison for spiral inductors using enhanced 1-π and 2-π topologies

Two different scalable models developed based on enhanced 1-πand 2-πtopologies are presented for onchip spiral inductor modeling.All elements used in the two topologies for accurately predicting the characteristics of spiral inductors at radio frequencies are constructed in geometry-dependent equations for scalable modeling.Then a comparison between the 1-πand 2-πscalable models is made from the following aspects:the complexity of equivalent circuit models and parameter-extraction procedures,scalable rul...     

Fabrication of a novel lumped electro-absorption modulator with a lower RC-time constant

A novel lumped electro-absorption modulator with a charge layer and an undercut ridge waveguide (DU-EAM) was fabricated and measured.Also,two other kinds of EAM with straight ridge waveguides,one with a charge layer(D-EAM) and another with no charge layer(N-EAM),were fabricated and tested to ensure that the design of the DU-EAM would reduce the RC-time constant.The measured capacitance of the D-EAM and the DU-EAM is lower than that of the N-EAM under reverse bias voltage from -1 to -8 V due to the inserted charge layer.The capacitances of the N-EAM,the D-EAM and the DU-EAM are 0.375,0.225 and 0.325 pF,respectively, at -3 V.In addition,the DU-EAM had a larger extinction ratio(25 dB at -3 V) and higher modulation efficiency (13 dB/V between -1 and -2 V) than two other straight-ridge-waveguide ones(the D-EAM performed 22 dB and 10 dB/V,the N-EAM performed 20 dB and 10 dB/V) due to the 5.2μm wider active region.     

重组后的CISPR 16系列标准

IEC(国际电工委员会)/CISPR(国际无线电干扰特别委员会)2003年11月发布了重组后的CISPR16(无线电骚扰和抗扰度测量设备和方法规范》(Specification for radio distur-bance and immunity measuring apparatus and methods)系列标准。该系列标准目前包括以下14个子标准,它们取代以前出版的CISPR16-1、CISPR16-2、CISPR16-3、CISPR16-4及其各修正案。 第一部分:无线电骚扰和抗扰度测量设备(Radio distur-bance and immunity measuring apparatus) CISPR 16-1-1:测量设备(Measuring apparatus)     

A 3.4-3.6 GHz power amplifier in an InGaP/GaAs HBT

This paper presents a 3.4-3.6 GHz power amplifier（PA） designed and implemented in InGaP/GaAs HBT technology.By optimizing the off-chip output matching network and designing an extra input-matching circuit on the PCB,several problems are resolved,such as resonant frequency point migration,worse matching and lower gain caused by parasitics inside and outside of the chip.Under V_cc = 4.3 V and V_bias = 3.3 V,a P_1dB of 27.1 dBm has been measured at 3.4 GHz with a PAE of 25.8%,the 2nd and 3rd harmonics are -64 dBc and -51 dBc,respectively. In addition,this PA shows a linear gain more than 28 dB with S₁₁<-12.4dB and S₂₂<-7.4 dB in 3.4-3.6 GHz band.     

其它电子理论与技术

Y98-61434-1 9913520便携式电子系统的热控制,第1部分(含3篇文章)=Thermal control of portable and electronic systems-partⅠ[会,英]//1998 IEEE 6th Intersociety Conference onThermal and Thermomechanical Phenomena in ElectronicSystems.—1～21 (AG)     

Carrier Transport Properties in the Doped Micro—crystalline Silicon Films

Doped micro-crystalline silicon films are deposited at temperatures as low as 400 ℃ by the catalytic chemical vapor deposition method using a silane and hydrogen gas mixture. Electrical properties such as the carrier concentration and the Hall mobility are investigated for various measuring temperatures. It is found that the grains of micro-crystalline silicon are preferentially oriented along the (220) direction , and that the Hall mobility is larger than 8 cm 2·V -1 ·s -1 , the carrier concentration is about 1×10 17 cm -1 ～1×10 19 cm -3 at room temperature.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

GB 13837-2003与GB 13837-1997之间的差异分析

GB 13837-2003<声音和电视广播接收机及有关设备无线电骚扰特性限值和测量方法>/Sound and television broadcast receivers and associated equipment - Radio disturbance characteristics - Limits and methods of measurement (IEC/CISPR 13: 2001, MOD),已于2003年4月14日发布,将于2003年12月1日实施.     

会议录来源索引(英文)

索取号会议录名称Y2002-62993 IEEE seventh international conference on real-time computing systems and applicationsY2002-62994 IEEE Asia-Pacific software engineering conferenceY2002-62995 IEEE international conference on transparent optical networksY2002-62996 IEEE international conference on electronics,circuits and systems,Vol.1     

热处理与表面处理工艺

Y2000-62067-460 0016273采用 MOCVD 在 GaAs 上生长自组织 GaSb 岛的大小与密度的控制=Size and density control of MOCVDgrown self-organised GaSb islands on GaAs[会,英]/Motlan,Goldys,E.M.//1998 IEEE International Con-ference on Phtoelectronic and Microelectronic Materialsand Devices.—460～463(EC)Y2000-62067-464 0016274采用 MOCVD 生长 GaSb 和 Al_xGa_(1-x)Sb 层及其特性=Growth and properties of GaSb and Al_xGa_(1-x) Sb Layersby MOCVD[会,英]/Ramelan,A.H.& Drozdowicz-     

Quasi-Thermodynamic Model of MOVPE of InAlN

Group - nitrides are very importantmaterials,which are applied to the fabrication ofgreen,blue and ultraviolet light emitting diodes(L EDs) and laser diodes(L Ds) [1 ] .Inx Al1 - xN alloy is a kind of promising material for Ga N- based...     

一种相位与精度可重构的多模式延时锁定环路

A multimode DLL with trade-off between multiphase and static phase error is presented. By adopting a multimode control circuit to regroup the delay line, a better static phase error performance can be achieved while reducing the number of output phases. The DLL accomplishes three operation modes： mode1 with a four-phase output, mode2 with a two-phase output and a better static phase error performance, and mode3 with only a one-phase output but the best static phase error performance. The proposed DLL has been fabricated in 0.13 μm CMOS technology and measurement results show that the static phase errors of mode1, mode2 and mode3 are -18.2 ps, 11.8 ps and -6.44 ps, respectively, at 200 MHz. The measured RMS and peak-to-peak jitters of mode1, mode2 and mode3 are 2.0 ps, 2.2 ps, 2.1 ps and 10 ps, 9.3 ps, 10 ps respectively.     

化合物半导体

Y2000-62067-396 0014196Al_xGa_(1-x)As 合金的光学常数建模=Modeling the opticalconstants of Al_xGa_(1-x)As alloys[会,英]/Rakic,A.D.&Djurisic,A.B.//1998 IEEE International Conferenceon Optoelectronic and Microelectronic MateriaIs and De-vices.—396～399(EC)Y2000-62067-400 0014197采用机械化学反应合成纳米晶体 GaN 粉末=Synthesisof nanocrystal GaN powders by mechanochemical reaction[会,英]/Cai,S.& Tsuzuki,T.//1998 IEEE Interna-tional Conference on Optoelectronic and MicroelectronicMaterials and Devices.—400～402(EC)Y2000-62067-403 0014198应用机械化学工艺合成Ⅱ-Ⅵ族半导体纳米颗粒=     

Call for Papers 2011 IEEE International Conference on Smart Grid and Clean Energy Technologies

2011 1EEE International Conference on Smart Grid and Clean Energy Technologies （IEEE ICSGCE2011） will be held in September 27-30, 2011 in Chengdu, China. IEEE ICSGCE2011 is sponsored by International Association of Computer Science and Information Technology （IACSIT）, Journal of Electronic Science and Technology （JEST - International）, the Institute of Electrical and Electronic Engineers （IEEE）, and University of Electronic Science and Technology of China （UESTC）. The Conference is also supported by University of Wollongong （Australian） and China Energy Association （CEA）.     

A 3 to 5 GHz low-phase-noise fractional-N frequency synthesizer with adaptive frequency calibration for GSM/PCS/DCS/WCDMA transceivers

正A low-phase-noise S-A fractional-TV frequency synthesizer for GSM/PCS/DCS/WCDMA transceivers is presented.The voltage controlled oscillator is designed with a modified digital controlled capacitor array to extend the tuning range and minimize phase noise.A high-resolution adaptive frequency calibration technique is introduced to automatically choose frequency bands and increase phase-noise immunity.A prototype is implemented in 0.13μm CMOS technology.The experimental results show that the designed 1.2 V wideband frequency synthesizer is locked from 3.05 to 5.17 GHz within 30μs,which covers all five required frequency bands.The measured in-band phase noise are -89,-95.5 and -101 dBc/Hz for 3.8 GHz,2 GHz and 948 MHz carriers,respectively, and accordingly the out-of-band phase noise are -121,-123 and -132 dBc/Hz at 1 MHz offset,which meet the phase-noise-mask requirements of the above-mentioned standards.