Oxygen Activity Dependence of the Electrical Conductivity of Li-Doped Cr2O3

The electrical conductivity of Li-doped Cr₂O₃ was investigated as a function of PO₂, temperature, and dopant content. Results show that the electrical conductivity remains almost unchanged with decreasing P O₂ in the high-P O₂ region but decreases rapidly at low P O₂. A second phase was found in samples which contained more than 0.85 mol% Li. The results are explained by a model in which the concentration of charge carriers is dependent on the acceptor dopant and oxygen vacancy concentration.     

Preparation of Porous Cr3C2 Grains with Cr2O3

Porous Cr₃C₂ grains (∼300 to 500 μm) with ∼10 wt% of Cr₂O₃ were prepared by heating a mixture of MgCr₂O₄ grains and graphite powder at 1450° to 1650°C for 2 h in an Al₂O₃ crucible covered by an Al₂O₃ lid with a hole in the center. The porous Cr₃C₂ grains exhibited a three-dimensional network skeleton structure. The mean open pore diameter and the specific surface area of the porous grains formed at 1600°C for 2 h were ∼3.5 (μm and ∼6.7 m²/g, respectively. The present work investigated the morphology and the formation conditions of the porous Cr₃C₂ grains, and this paper will discuss the formation mechanism of those grains in terms of chemical thermodynamics.     

Defect Structure and Electrical Conductivity of ThO2-Y2O3 Solid Solutions

Compositions in the system ThO₂-YO_1.5 were coprecipitated as oxalates and converted to oxides. Disks were pressed and sintered in oxygen at 1400° to 2200°C. Densities of the sintered disks were 96 to 98% of theoretical. Solid solutions with the fluorite-type structure were formed up to 20 to 25 mole % YO_1.5 at 1400°C and up to 45 to 50 mole % YO_1.5 at 2200°C. Density data showed that these solid solutions correspond to Th_{1— x} Y _x O_{2—0.5 x} , having a complete cation sub-lattice filled by Th⁴⁺ and Y³⁺ ions, and vacancies in the anion sublattice. The observed increase in electrical conductivity with increase in YO_1.5content is consistent with charge transport by oxygen ions through a vacancy mechanism. Approximately 7 mole % ThO₂ is soluble in YO_1.5 at 2200°C. Density results indicate an anion interstitial structure for the Y₂O₃ phase. Transference number measurements indicate that the electrical conductivities are only partly due to ions.     

Final Sintering of Cr2O3

The effect of oxygen activity on the sintering of high-purity Cr₂O₃ is shown. Theoretical density was approached at the equilibrium O₂ partial pressure needed to maintain the Cr₂O₃ phase ( P _o2=2×10⁻¹² atm). The presence of N₂ in the atmosphere during sintering did not prevent final sintering. The addition of 0.1 wt% MgO at this equilibrium pressure effectively controlled the grain growth and further increased the sintered density to very near the theoretical value. The solute segregation of MgO at the grain boundaries, followed by nucleation of spherulites of magnesium chromite spinel on the boundaries, accounted for the grain-growth control. It is speculated that these isolated spherulites locked the grain boundaries together, changing the fracture mode of the sintered oxide from inter-to intragranular and also that larger MgO additions produced a more continuous spinel formation at the boundaries, resulting in decreased sintered density. Weight loss, which was also monitored as a function of O₂ activity, correlated with the changing predominant volatile species in the Cr-O system.     

Cation Self-Diffusion in Cr2O3

Self-diffusion of ⁵¹Cr was measured both parallel to and perpendicular to the c axis in single crystals of Cr₂O₃ as a function of oxygen partial pressure at 1490° and 1570°C. The oxygen-partial-pressure dependence of the diffusivity indicates that cation self-diffusion occurs by a vacancy mechanism. The values of the self diffusion coefficients determined in this experiment are about 10⁴ times smaller than those previously reported in this temperature range .     

Cation Tracer Diffusion in Cr2O3 and Cr2O3-0.09 wt% Y2O3

The cation diffusivities in the lattice and along dislocations and grain boundaries have been measured on sintered polycrysals of Cr₂O₃; and Cr₂Cr₂O₃-0.09 wt% Y₂O₃ at1100°C and at the pO₂ corresponding to that of Cr/Cr₂O₃ equilibrium at that temperature. Results for lattice and dislocation diffusivities in pure Cr₂O₃ are in good agreement with previous work. The present results indicate that yttrium additions have negligible effect on lattice and dislocation diffusion. However, grain-boundary diffusion in pure Cr₂O₃ is significantly slower than grain-boundary diffusion in Cr₂O₃-0.09 wt% Y₂O₃. The results are discussed in terms of their implications for the reactive-element effect in high-temperature oxidation of chromium-containing alloys.     

Grain-Boundary Segregation in MgO-Doped Al2O3

Magnesia-doped alumina was fractured in a high-vacuum Auger electron spectrometer, and the resulting intergranular fracture surface was analyzed for surface composition. Calcium was present on the fracture surface in amounts of ∼2 to 5 at.%. There was no indication of Mg on the fracture surface. The bulk Ca concentration was 5 to 15 ppm, whereas MgO was present at the 1000-ppm level. The presence of excess Ca at the grain boundary can be explained by the fact that its ionic radius is relatively large compared to those of Al and Mg. Sputtering profiles normal to the fracture surface indicate that the segregated Ca is concentrated in a region near tha intergranular fracture surface.     

Thermal Conductivity of Cr2O3 in the Vicinity of the Neel Transition

Thermal conductivity (A) data for two dense Cr₂O₃ samples are reported. The results, which span the temperature range 270 to 360 K, show an inflection near the Neel transition temperature, 308 K. An analysis shows that the slope of the higher-temperature portion of the λlD⁻¹−T curve is about what would be expected for ordinary 3-phonon U-process scattering. Above T_N the mean free path for phonon-spin scattering is constant and equal to ∼10 nm.     

Thermodynamic Modeling of the Isomorphous Phase Diagrams in the Al2O3–Cr2O3 and V2O3–Cr2O3 Systems

The phase diagrams in the Al₂O₃–Cr₂O₃ and V₂O₃–Cr₂O₃ systems have been assessed by thermodynamic modeling with existing data from the literature. While the regular and subregular solution models were used in the Al₂O₃–Cr₂O₃ system to represent the Gibbs free energies of the liquid and solid phases, respectively, the regular solution model was applied to both phases in the V₂O₃–Cr₂O₃ system. By using the liquidus, solidus, and/or miscibility gap data, the interaction parameters of the liquid and solid phases were optimized through a multiple linear regression method. The phase diagrams calculated from these models are in good agreement with experimental data. Also, the solid miscibility gap and chemical spinodal in the V₂O₃–Cr₂O₃ system were estimated.     

Electrical Properties and Defect Structure of Y2O3

Guarded measurements of the electrical conductivity of high-purity, polycrystalline Y₂O₃ in thermodynamic equilibrium with the gas phase were made under controlled temperature and oxygen partial pressure conditions. Data are presented as isobars from 1200° to 1600°C, and as isotherms from oxygen partial pressures of 10⁻¹ to 10⁻¹⁷ atm. The ionic contribution to the total conductivity, determined by the blocking electrode polarization technique, was less than 1% over the entire range of temperatures and oxygen partial pressures studied. Yttria is shown to be an amphoteric semiconductor with the region of predominant hole conduction shifting to higher pressures at higher temperatures. In the region of p -type conduction, the conductivity is represented by the expression σ= 1.3 × 10³ p O₂^3/16 exp (-1.94/kT). The observed pressure dependence is attributed to the predominance of fully ionized yttrium vacancies. Yttria is shown to be a mixed conductor below 900°C.     

Oxidation/Vaporization Kinetics of Cr2O3

The weight loss of Cr₂O₃ in oxidizing environments (Po₂= 1 to 10⁻³ atm) at 1200°C was measured. Both hot-pressed and sintered Cr₂O₃ pellets were investigated in O₂/Ar gas mixtures, and the dependence of the weight loss on the O₂ partial pressure, the gas flow rate, and the total pressure was determined independently. The experimentally determined O₂ partial pressure dependence (rate ∝ PO₂^3/4) corresponds to that expected for the reaction Cr₂O₃(s)+3/2O₂⇌2CrO₃(g). The flow rate and total pressure dependencies show that mass transport through a gaseous boundary layer is the rate-controlling step in the oxidation/vaporization of Cr₂O₃. Evaporation coefficients for the loss of CrO₃(g) under the experimental conditions were <0.01.     

Sublimation of Cr2O3 at High Temperatures

The sublimation of chromic oxide, Cr₂O₃, has been observed in vacuum by the Langmuir technique using induction and solar heating. Extensive sublimation did not yield any new phases on the basis of X-ray powder studies, and condensates of Cr₂O₃ were always obtained. Flash vaporization and flow experiments in CO or O₂ atmospheres and in vacuum indicated no appreciable differences in rates of sublimation. Weight-loss experiments showed that the rate of sublimation was slightly higher than predicted for decomposition to the elements and suggested that small amounts of complex molecules, e.g. CrO and CrO₂, were also present in the equilibrium vapor.     

Electrical Conductivity and Defect Structure of Y2O3 as a Function of Water Vapor Pressure

The electrical conductivity of several sintered yttria ceramics with different levels of lower valent cation impurities was studied as a function of the partial pressure of water vapor (3 to 1600 Pa) at 500° to 1300°C in oxygen or air. At the higher temperatures yttria is a P -type conductor, but at the lowest temperatures and highest water vapor pressures, an ionic contribution becomes significant. The p -type conductivity decreases with increasing water vapor pressure. This is interpreted in terms of a model involving dissolution of hydrogen as interstitial protons and which counterbalance the effective charges of the lower valent impurities. At the higher water vapor pressures and lower impurity levels excess protons are probably compensated by interstitial hydroxide or oxygen ions. Indications of grain boundary segregation of impurities are reported.