重视信息化监理学科研究

监理制度始于上世纪80年代我国的建设工程领域．最近几年在信息化领域内开始试行。2002年底．信息产业部颁布了《信息系统工程监理暂行规定》．规定了在信息化建设中．建设单位在委托承建单位进行工程建设的同时．还“应当”委托独立的第三方(即监理公司)对工程进行监理工作。随着信息化监理制度的推出．信息化监理工作在全国范围内．在各地信息化主管部门的大力推动下．在巨大的     

试论广播电视工程施工的管理策略

广播电视工程施工管理的优劣与否直接关系到广播电视工程的质量,关系到千家万户的利益,关系到我国广播电视事业的发展,因此必须对这一问题予以高度重视。广播电视工程施工管理的现状很长时间以来,我国广播电视工艺系统工程的施工管理都是由建设单位自己进行的,很少会聘请监理单位进行管理。这几年来,随着广播电视事业的发展,国家对建设工程规范化管理的力度越来越强,监理单位在这个时期的作用逐渐显现出来,越来越多的建设单位开始认同聘请监     

信息系统工程监理相关问题探究

在工程建筑中引入信息系统工程的监理机制,不仅可以有效确保工程的质量与进度,还能保护建设方的利益。本文主要介绍了信息系统工程监理,并就信息系统工程监理的主要组成进行了分析,并提出了一些信息系统工程监理对策。     

工程监理在移动通信核心网建设中的作用分析

在移动通信核心网建设中,项目的实施存在较高风险,涉及的范围也比较广,其具备较强的专业。在建设工作中,发挥工程监理工作的作用,能够实现移动通信建设单位与专业监理单位之间的有效合作。基于工程监理工作的实施,施工单位能够对一些重点技术进行咨询,并按照通信工程建设施工要求进行管理与监督。文章对工程监理在移动通信核心网建设中发挥的作用进行了详细的分析与阐述。     

信息系统工程监理的必要性与不足分析

信息系统工程监理是指依法设立且具备相应资质的信息系统工程监理单位受业主单位委托,依据国家有关法律法规、技术标准和信息系统工程监理合同,对信息系统工程项目实施的监督管理。山西省信息系统工程监理起始于2000年,当时的山西省电信公司(现更名为山西省通信公司)在2000年省内二级干线原平至大同光缆线路工程中引入了施工监理单位,对项目进行了试监理,取得了较好的效果。从2001年开始,信息系统工程监理范围逐步扩大,从省内二级干线光缆工程开始,逐步扩展到二级干线传输设备工程、基础网光缆工程、基础网管道工程、无线市话基站工程等领域。     

基于信息安全的涉密信息工程监理研究

当前信息系统的应用逐渐拓展到各个领域,信息工程建设在不断发展的同时所存在的风险不能忽视。在当前大环境下信息安全的涉密信息及其重要,而监理机构作为信息化工程管理的第三方专业机构,针对此部分建设将运用多种方式方法予以管控。本文从涉密信息监理的必要性、涉密工程监理的工作重点等几个方面对此问题进行阐述。     

应用需求推动金卡工程不断创新发展

发展信息产业和现代服务业是推进新型工业化的关键。推进社会信息化是全面建设小康社会的要求。坚持以信息化带动工业化,以工业化促进信息化,提高经济社会信息化水平是我们发展信息产业的指导方针。金卡工程是中国信息化建设的起步工程之一,实施14年来取得了显著的成效。加强了国家对经济的宏观调控,推动了金融商贸电子化,对提高各行业,各部门以及各级政府的现代化管理水平,推动国民经济和社会的和谐发展发挥了重要作用。     

信息产业部明确2007年信息化推进工作重点与思路

2007年3月8日在广州市召开的2007年信息化推进工作座谈会上，夯实信息化基础工作、完善电子认证服务体系建设、启动农村信息化试点、有针对性地推进企业信息化、推动城市和社区信息化、加强信息系统工程监理单位资质认证的管理规范等一系列重点工作任务被明确。     

浅谈监理在通信工程建设中的地位和作用

监理是独立于第三方的服务性行业，监理的职能等同于由第三方执行的管理职能。20世纪80年代，我国建设工程领域开始实行监理制度；最近几年，随着我国信息产业的发展，监理制度开始在信息系统工程领域内试行。2002年底，国家信息产业部颁布了《信息系统工程监理暂行规定》；2003年4月，国家信息产业部颁布了《信息系统工程监理单位资质管理办法》与《信息系统工程监理工程师资质管理办法》，     

信息系统工程监理探讨

在分析了我国信息系统工程监理的必要性和可行性的基础上,针对目前信息系统工程监理机制的初级阶段情况,探讨了信息系统工程监理的方法和手段.对如何加强项目前期监理、坚持项目全过程动态监理提出了有益的见解.另外,鉴于软件工程的特点以及其对信息化项目的重要性,对软件工程的监理进行了单独研究.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.