一种集成电路测试用程控信号源的设计

针对目前集成电路测试系统中交流参数的测试现状,提出一种基于PCI总线和直接数字频率合成技术（Direct Digital Synthesize,DDS）的程控信号源设计方案;文章先介绍了整个信号源系统的构成与工作原理,随后详细论述DDS信号发生模块、幅度调节模块等模块的硬件设计;目前该信号源已通过相关部门验收并交付使用,该信号源可满足各种测试环境要求,同时其技术指标也达到了预期设计的精度要求。     

基于AD9858定时信号源模块设计

定时及DDS信号源模块是将定时器和DDS信号源两个功能集成在一个模块中实现,能够完成定时信号和DDS信号的产生,并对DDS信号8倍频后,输出中心频率2.4GHz调频/调相信号。本设计采用多种方法较好的解决了模拟信号和数字信号相互影响的问题,保证了DDS输出稳定的调频信号,在实际工作中取得了良好的效果。     

声光可调谐滤波器驱动系统设计

声光可调谐滤波器(AOTF)作为一种新型分光元件,其功能的实现可通过对驱动电压的调节来控制衍射光光强,特别是对于非共线型AOTF,通过控制超声波频率能获得更高的衍射效率。该文介绍了基于单片机(SCM)和直接数字频率合成器(DDS)的AOTF的驱动系统设计,该系统主要由信号源模块、功率放大模块及上位机模块3部分组成。单片机用来实现上、下位机的通信及对DDS的控制功能,通过调整频率控制字使DDS输出不同频率的正弦信号;功放模块通过三级级联方式,无需进行阻抗匹配设计,且频带范围宽,接近3个倍频程。该系统可实现单频和扫频两种工作方式,驱动频率为30~200 MHz,驱动功率可达33dBm,结构简单,稳定性好。     

基于DDS的探地雷达信号源研制

阐述了国内外冰川探测雷达的发展,以及DDS在探地雷达中的应用发展。介绍了信号源器件选型原则和ADI公司的DDS芯片显著特点,列出了甚高频(VHF)机载探地雷达系统对信号源的参数要求,并利用ADI公司的DDS芯片设计制作了100 MHz～150MHz宽带信号源和175 MHz高速采样时钟模块。设计了不同波形输出的控制软件,给出了对应的软件流程。对实验测试结果进行了描述并给出了进一步改进系统性能的方法。     

基于DDS的同步相位信号源的设计

针对重离子加速器(HIRFL)的低电平相幅稳定系统,设计了以同步置位直接数字频率合成器(DDS)技术为基础的同步相位信号源作为系统的不同频、严相位的基准信号源。以FPGA芯片为核心,采用VHDL语言设计各功能模块,简化了设计过程,便于升级。经过电路设计、模块仿真和现场测试,验证了设计的正确性。测试结果表明:该系统具有可靠性高、精度高、稳定度高、频率范围宽、便于控制等优点。     

基于MCU和FPGA的三相高精度程控电源

简述了目前程控电源的现状和FPGA在实现闭环PID控制方面的优势,提出了将直接数字频率合成技术（DDS-Digital Direct Frequency Synthesis）和PID控制技术相结合来设计程控电源,介绍了系统各个模块,并分析了FPGA实现DDS和PID的原理与方法,通过实验测试证明该方法的可行性。实践证明...     

基于DAC的电阻层析成像系统激励信号源设计

为了解决传统电阻层析成像系统中激励信号源的问题,如电路的频率、幅值调节困难,电路设计模块复杂等问题,本文设计了一种新的电阻层析成像激励信号源产生系统。该系统利用微控器控制DAC芯片产生幅度频率可调的激励信号,该信号驱动精密电压/电流转换电路后产生双极性脉冲电流激励信号。研究表明,此系统可以满足使用要求,同时,在一定程度...     

一种基于国产IC的有源相控阵雷达信号源设计与实现

本文给出了一种基于有源相控阵雷达的信号源设计方案,该设计方案选用国产IC(DDS、FPGA和光电转换模块)完成硬件电路的设计。实验结果表明,产生的线性调频信号满足设计指标要求和基于国产IC信号源的可行性。     

基于ROM结构的直接数字频率合成器ASIC设计

完成了一种基于ROM结构的直接数字频率合成器(Direct Digital Synthesizer,DDS)的ASIC设计。其中累加器采用进位链和流水线相结合的方式,提高了工作频率的同时降低了资源占用率;ROM模块应用以正弦函数1/4波形对称性为基础,并结合Hutchison相交分离法的改进压缩算法,压缩率达到49倍,降低了芯片的功耗和面积。基于SMIC 0.18μm CMOS工艺库完成了后端物理设计和后仿真。该DDS功耗低,面积小,频率分辨率高,可作为高质量的信号源应用于4G移动通信中。     

基于DDS的跳频通信信号源的研制

首先介绍了DDS(直接数字频率合成器)的结构和工作原理,然后给出了一个基于AD公司的DDS芯片AD9952和TI公司的DSP芯片TMS320VC5402的跳频通信用信号源的方案,分析了部分组成.最后,给出了按该方案设计的频率范围为46 MHz～136 MHz的跳频信号源的测试结果和设计中的注意事项.测试结果表明,该方案满足设计要求.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.