掺铈硅酸镥(Lu2SiO5:Ce)晶体的生长与闪烁性能

用Czochralsky方法和铱坩埚感应加热技术生长出了尺寸为φ35mm×40mm的掺铈硅酸镥(LSO:Ce)闪烁晶体.透射光谱表明,由于铈离子的掺入,使晶体的吸收边由纯LSO晶体的195nm红移至380nm.LSO:Ce晶体的紫外激发波长按强度递减的顺序依次为380、333、319和216nm,其光发射为带状谱,波长覆盖范围从390nm至560nm.X射线激发的发射谱具有典型的双峰特征,峰值波长为393nm和.426nm.这些特征与Ce³⁺离子基态能级⁴f₁因自旋-轨道耦合而产生的两个分裂能级和Ce⁺离子在LSO晶体中占据两个不同的结晶学格位有关.     

Ce:Lu2SiO5闪烁陶瓷的放电等离子烧结与发光性能

以亚微米级单相铈离子掺杂硅酸镥(Ce:Lu2SiO5,LSO)发光粉体为原料,采用放电等离子烧结(Spark Plasma Sintering)技术対多晶LSO闪烁陶瓷的制备方法进行了探索,同时对其发光性能进行了研究.在(1350℃/5min)的条件下实现了LSO粉体的快速致密化烧结,研制出了具有良好发光性能的半透明多晶LSO闪烁陶瓷,其相对密度达到理论密度的99.5%.在360nm紫外激发条件下,呈现位于380～600nm的宽峰发射行为.其相对发光强度达到LSO闪烁单晶的75%,发光衰减时间仅为9.67ns.该材料有望成为一种新型的高光输出、快衰减多晶闪烁材料.     

大尺寸 Ce:Lu1.6Y0.4SiO5闪烁晶体的生长和光谱特性

采用中频感应提拉法生长出尺寸为φ60mm×110mm的CeLu1.6Yo.4SiO5(LYSO)晶体,与LSO晶体相比,LYSO晶体的优势是提高了晶体质量、降低了熔点和原料成本等.在室温下测试了LYSO晶体的透过光谱、激发光谱和发射光谱,结果表明Y的加入使LSO晶体的吸收边向短波方向偏移.Ce3+的4f1→5d1跃迁吸收导致紫外区产生三个吸收带.发射光谱具有Ce3+典型的双峰特征,经Gaussian多峰值拟合,双峰395nm和418nm归属于Ce1发光中心,而435nm的发光峰与Ce2发光中心有关.     

Ce,Pr:YLuAG原料合成、晶体生长及LED应用

采用共沉淀法合成了Ce,Pr:YLu AG粉末,在1450℃下煅烧可获得石榴石结构纯相。经过压制成型、固相烧结等工艺制备了多晶料棒,TEM显示二次烧结获得的料棒具有良好的结晶性。采用光学浮区法生长了Ce,Pr:YLu AG晶体。晶体通体透明,呈浅黄色,肩部有少量裂纹。透过率达到81.8%,接近于理论值84.2%。晶体在460 nm波长激发下呈现530 nm发射带和610 nm发射峰,分别对应Ce3+和Pr3+的特征发射,表明Ce3+可以向Pr3+进行能量转移;在487 nm激发下晶体仅出现Pr3+离子的特征发射峰。Ce,Pr:YLu AG晶体色坐标为(0.474,0.495),比商用Ce:YAG荧光粉更靠近红光区域,可以弥补现有荧光粉不足,更适合制造白光LED。     

Li6Gd(BO3)3:Ce晶体的提拉法生长和闪烁性能

采用提拉法和铂坩埚感应加热技术生长出最大尺寸为直径25mm，长40mm的Li6Gd（BO3）3：Ce晶体，XRD分析表明，生长出的晶体为单一的Li6Gd（BO3）3：Ce相，结构属P21／c空间群．对晶体生长中存在的解理开裂、应力开裂及多晶问题进行了讨论，并从晶体结构的角度解释了（020）完全解理面出现的原因．晶体在380-800nm之间的透过率接近90％，200-380nm之间的吸收是由Ce^3＋离子的4f-5d跃迁和Gd^3＋离子的4f-4f跃迁引起的．不同激发源激发下的发射均显示Ce^3＋离子的双谱峰特征；相比于紫外激发下的发射而言，X射线激发下的发射光谱略有红移．该晶体发光符合单指数衰减模型，衰减时间为30．74ns，在241^Am源的α射线激发下晶体的能量分辨率为28．84％．     

Cr3+:LiNbO3晶体生长和光谱特性的研究

采用提拉法从近化学计量比的熔体中生长出尺寸为φ20mm×60mm的优质LiNbO3Cr(CLN)晶体,其光学均匀度为7.05E-005.进行了吸收和荧光光谱的测定研究.吸收谱测试表明Cr3+离子在晶体中有两个宽且强的吸收带及两个微弱的吸收线,两宽带中心波长分别为481和657nm,对应于4A2→4T1和4A2→4T2两个具有相同的总自旋能级之间的跃迁,在4A2→4T2吸收宽带的长波边缘处有个很小的吸收峰,其波长为727nm,对应于4A2→2E(R线)的跃迁.荧光测试表明当激发波长为660nm时,CLN晶体荧光宽带和一个较弱的荧光线峰并存,宽带范围为800～982nm,峰值波长为870nm,对应于4T2→2E,4A2的联合能级跃迁,荧光线峰波长约为752nm,其强度较弱,相应于2E→4A2(零声子线)能级跃迁.计算了晶场强度和Racah参数,其Dq,B,G大小分别为1522.1、542.5和3218.7cm-1,Dq/B=2.81,晶体属于强场介质.研究表明,CLN晶体具备可调谐激光晶体的基本光谱要求,且有良好的物化性能,可以实现宽频带可调谐激光输出.又具有较大的倍频系数,有望实现410nm附近紫外的自倍频激光输出.     

铈掺杂多孔硅的形貌和光致发光研究

采用电化学方法在多孔硅中掺杂了稀土铈(Ce)元素.利用原子力显微镜表征了多孔硅和Ce掺杂多孔硅的表面形貌,采用荧光分光计对样品的光致发光(PL)特性进行了研究.多孔硅样品在480nm波长激发下PL谱上观察到两个发光峰,分别位于572和650nm;通过光致发光激发谱测量,得到位于572、650nm的发光峰对应的最佳激发波长分别为380和477nm.Ce掺杂多孔硅样品在480nm波长激发下,PL谱上只显示出多孔硅原有的发光增强;而在380nm波长激发下的PL谱上不仅显示多孔硅原有的发光增强,而且还出现了新的发光峰位于517nm.认为这分别是Ce3 与nc-Si发生了能量传递和Ce掺杂引入了新的发光中心所造成的.     

荧光粉Sr3-x-yAl2O6∶xCe3+,yEu2+的制备及其发光特性

采用高温固相反应法制备了Sr3-x-yAl2O6:xCe3+,yEu2+(x=0,y=0;x=0.04,y=0;x=0.04,y=0.02;x=0.04,y=0.04;x=0.04,y=0.06;x=0.04,y=0.08;x=0,y=0.04)荧光粉,研究其相组成与荧光特性,结果表明,样品具有单相Sr3Al2O6晶体结构。在360nm波长的紫外光激发下,Ce3+离子辐射出峰值在434nm附近的宽谱蓝光。通过能量传递作用,Eu2+离子辐射峰值为517nm左右的宽谱绿光。Ce3+和Eu2+的荧光组合获得了色坐标为(0.2611,0.3313)的近白光发射。样品的激发光谱分布在250～400nm的波长范围,这种荧光粉有望在紫外或近紫外激发的白光LED中获得应用。     

大尺寸Ce:Lu1.6Y0.4SiO5闪烁晶体的生长和光谱特性

采用中频感应提拉法生长出尺寸为φ60mm×110mm的Ce:Lu1.6Y0.4SiO5(LYSO)晶体,与LSO晶体相比,LYSO晶体的优势是提高了晶体质量、降低了熔点和原料成本等.在室温下测试了LYSO晶体的透过光谱、激发光谱和发射光谱,结果表明Y的加入使LSO晶体的吸收边向短波方向偏移. Ce3+的4f1→5d1跃迁吸收导致紫外区产生三个吸收带.发射光谱具有Ce3+典型的双峰特征,经Gaussian多峰值拟合,双峰395nm和418nm归属于Cel发光中心,而435nm的发光峰与Ce2发光中心有关.     

KBaPO4:Tb3+材料制备及其发光特性

采用高温固相法合成了KBaPO4:Tb3+绿色发光荧光粉,并研究了材料的发光性质.KBaPO4:Tb3+材料呈多峰发射,发射峰位于437、490、545、586和622 nm,分别对应Tb3+的5D3→7F4和5D4→7FJ=6,5,4,3跃迁发射,主峰为545 nm;监测545 nm发射峰,所得激发光谱由4f 7-5d1的宽带吸收(200～330 nm)和4f-4f电子吸收(330～400 nm)组成,主峰为380 nm.研究了Tb3+掺杂浓度,电荷补偿剂Li+、Na+、K+和Cl-,及敏化剂Ce3+对KBaPO4:Tb3+材料发射强度的影响.结果显示,调节激活剂浓度、添加电荷补偿剂或敏化剂均可在很大程度上提高材料的发射强度.上述结果表明KBaPO4:Tb3+材料是一种很好的近紫外光激发型高效绿色发光荧光粉.     

Magnetic coupling in La0.67Ca0.33MnO3/La0.67Sr0.33CoO3/La0.67Ca0.33MnO3 sandwiches

La_0.67Ca_0.33MnO₃ (LCMO)/La_0.67Sr_0.33CoO₃ (LSCO)/LCMO trilayer films are fabricated on single-crystal substrates NdGaO₃ (110) and the interlayer coupling are investigated. Compared with LCMO single layer, sandwiches showed the enhanced metal-insulator transition temperature of LCMO layers. The magnetoresistance is dependent on spacer thickness and the peak value dramatically decreases when LSCO layer is thick enough because of shorting by the LSCO layer. The magnetic coercivity H_C shows a nonmonotonic behavior with changing spacer layer thickness and the waist-like hysteresis indicates that there is an indirect exchange coupling between the top and bottom LCMO layers across the spacer layer.     

Varistor properties of ZnO-Pr6O11-CoO-Cr2O3-Y2O3-In2O3 ceramics

The varistor properties of the ZnO-Pr₆O₁₁-CoO-Cr₂O₃-Y₂O₃-In₂O₃ ceramics were investigated for different concentrations of In₂O₃. The increase of In₂O₃ concentration slightly increased the sintered density (5.60-5.63 g/cm³) and slightly decreased the average grain size (3.4-2.9 μm). The breakdown field increased from 6023 to 14822 V/cm with increasing concentration of In₂O₃. The nonlinear coefficient increased from 17.6 to 44.6 for up to 0.005 mol%, whereas the further doping caused it to decrease to 36.8. In₂O₃ acted as an acceptor due to the donor concentration, which decreases in the range of 1.02 × 10¹⁷ to 0.24 × 10¹⁷/cm³ with increasing concentration of In₂O₃.     

Nanocrystallization of SrBi2Nb2O9 from glasses in the system Li2B4O7---SrO---Bi2O3---Nb2O5

Transparent glasses in the system (100−x)Li₂B₄O₇–x(SrO---Bi₂O₃---Nb₂O₅) (10≤x≤60) (in molar ratio) were fabricated by a conventional melt-quenching technique. Amorphous and glassy characteristics of the as-quenched samples were established via X-ray powder diffraction (XRD) and differential thermal analyses (DTA) respectively. Glass–ceramics embedded with strontium bismuth niobate, SrBi₂Nb₂O₉ (SBN) nanocrystals were produced by heat-treating the as-quenched glasses at temperatures higher than 500 °C. Perovskite SBN phase formation through an intermediate fluorite phase in the glass matrix was confirmed by XRD and transmission electron microscopy (TEM). Infrared and Raman spectroscopic studies corroborate the observation of fluorite phase formation. The dielectric constant (_r) and the loss factor (D) for the lithium borate, Li₂B₄O₇ (LBO) glass comprising randomly oriented SBN nanocrystals were determined and compared with those predicted based on the various dielectric mixture rule formalism. The dielectric constant was found to increase with increasing SBN content in LBO glass matrix.     

Microstructures of YBa2Cu3O7/La0.7Ca0.3MnO3 and La0.7Ca0.3MnO3/YBa2Cu3O7 bi-layers grown on (001)LaAlO3

Epitaxial YBa₂Cu₃O₇/La_0.7Ca_0.3MnO₃ (YBCO/LCMO) bi-layers and La_0.7Ca_0.3MnO₃/YBa₂Cu₃O₇ (LCMO/YBCO) bi-layers were grown on (001)LaAlO₃ by pulsed laser deposition, and their microstructures were compared by transmission electron microscopy investigation. In the YBCO(100 nm)/LCMO(150 nm) bi-layers, the LCMO layer consists of columnar grains of ~ 17 nm in diameter and contains mixed orientation domains of [100]_c, [010]_c and [001]_c. The YBCO layer is totally c-axis oriented and the YBCO lattices are tilted − 2.5° to + 2.5° as they grew on the rough surfaces of LCMO columnar grains. For the LCMO(140 nm)/YBCO(140 nm) bi-layers, the LCMO/YBCO interface is sharp and flat. The initial 12-nm thickness of the YBCO layer is composed of c-axis oriented domains, and the upper part of YBCO layer is [100] oriented. The LCMO layer was predominantly [001]_c oriented while [100]_c-oriented domains were occasionally observed.     

Syntheses of hollandite type Rb2Cr8O16, K2Cr2V6O16 and K2V8O16

Hollandite-type compounds, Rb₂Cr₈O₁₆, K₂Cr₂V₆O₁₆ and K₂V₈O₁₆, were synthesized under high P-T conditions up to 1200°C and 7GPa. The structural refinement using a single crystal of Rb₂Cr₈O₁₆ confirms that the structure is similar to that of K₂Cr₈O₁₆. Magnetic measurements indicate that Rb₂Cr₈O₁₆ is ferromagnetic below 295K, K₂Cr₂V₆O₁₆ paramagnetic down to 77K and K₂V₈O₁₆ has susceptibility anomaly at 175K. These compounds are all semiconductive and show discontinuities in temperature-resistivity curves at points corresponding to magnetic anomalies.     

Vapour-liquid equilibria in the ternary mixtures N2---CH4---C2H6 and N2---C2H6---C3H8

A systematic study was performed with mixtures consisting of N₂, CH₄, C₂H₆ and C₃H₈, to investigate experimentally phase equilibria and caloric properties and to test the accuracy of thermodynamic correlations. The first part of this Paper reports results of T---p---x---y measurements on ternary systems in the range 20 < p < 120 bar and 140 < T < 220 K. The results are compared with data calculated by generalized equations of state.     

PbSbBiS4-Sb2S3 and PbSbBiS4-Bi2S3 joins in the PbS-Sb2S3-Bi2S3 system

Phase equilibria along the PbSbBiS₄-Sb₂S₃ and PbSbBiS₄-Bi₂S₃ joins of the PbS-Sb₂S₃-Bi₂S₃ system have been studied for the first time using differential thermal analysis, X-ray diffraction, microstructural analysis, microhardness tests, and density measurements, and the phase diagrams of the joins have been mapped out. The joins are shown to be pseudobinary with limited series of terminal solid solutions. The solid solutions are p-type semiconductors.     

Characterization of YBa2Cu3O7/PrBa2Cu3O7 superlattices

We investigated the structural and superconducting properties ofc-axis oriented (YBa₂Cu₃O₇) _nY /(PrBa₂Cu₃O₇) _npr superlattices with thicknesses of the individual layers down to one unit cell (10nY1; 18>nPr 1). By transmission electron microscopy and X-ray diffraction we find an excellent structural quality of the samples, though the quantitative analysis shows the existence of defects. In superlattices with decoupled YBa₂Cu₃O₇ layers of two unit cell thickness we find a highT _c value of 75 K. We probed the flux line structure in the superlattices by measurements of the critical current density in magnetic fields. The experiments show that the flux-line dynamics is dominated by the movement of pancake vortices.     

The effect of Bi1.5Zn0.5Nb0.5Ti1.5O7 cover layer on the dielectric and tunable properties of Ba0.6Sr0.4TiO3/Bi1.5Zn0.5Nb0.5Ti1.5O7 bilayered thin films

Bi_1.5Zn_0.5Nb_0.5Ti_1.5O₇ (BZNT) thin films with different thicknesses as cover layers were deposited on the Ba_0.6Sr_0.4TiO₃ (BST) thin films on the Pt/Ti/SiO₂/Si substrates by radio frequency magnetron sputtering method. The microstructure, surface morphology, dielectric and tunable properties of BST/BZNT heterogeneous bilayered films were investigated as a function of the thickness of BZNT films and the effect of BZNT films on the asymmetric electrical properties of BST/BZNT bilayered films was discussed. It was found that BZNT cover layer significantly improved the leakage current and the dielectric loss, and the dielectric constant and tunability of BST/BZNT bilayered thin films simultaneously decreased with the increasing thickness of BZNT films. The BST/BZNT bilayered thin film with a 50 nm BZNT cover layer gave the largest figure of merit (FOM) of 33.48 with the upper tunability of 55.38%. The asymmetric electrical behavior of BST/BZNT bilayered films is probably related to an internal electric field caused by built-in voltages at Pt/BST and BZNT/Au interfaces.     

Structural study of Sr0.3Ba0.7Nb2O6 and La0.030Sr0.255Ba0.700Nb2O6 ceramic systems

Sr_0.3Ba_0.7Nb₂O₆ (SBN) and La_0.030Sr_0.255Ba_0.700Nb₂O₆ (LSBN) ceramic compounds have been prepared using the traditional ceramic method at two different calcination temperatures (900 and 1000 °C) and later sintered both at 1400 °C. A study of the effects of the calcination temperatures and La substitution on the morphological, compositional, and structural properties of SBN and LSBN is presented using scanning electronic microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD) analysis. From Rietveld refinement processes, the XRD patterns were interpreted to evaluate such effects in the structural parameters and the site occupation factors of the heavy metals and oxygen atoms. The effect of the incorporation of La resulted in a 0.25% cell contraction and turned out to be higher than the 0.08% dilation effect produced by the increase of calcination temperature. The La ion with similar effective ionic radius and higher electronegativity is incorporated into the structure occupying the A₁ site just like the Sr ions in the SBN compound. Differences in the site occupation factors between the SBN and LSBN samples lead to substantial changes in the physical properties such as temperature of relative dielectric constant maximum, relative dielectric constant, and dielectric loss, correlated with the distortion and the relative orientation of the oxygen octahedra.