共查询到20条相似文献,搜索用时 125 毫秒
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介绍了非晶YBCO薄膜用作非制冷热释电红外探测器材料。它在室温下显示出强的热释电行为,并且容易在室温下采用射频磁控溅射法沉积,制备工艺与CMOS工艺相兼容,是
一种很有潜力的热释电探测器材料。并介绍了非晶YBCO热释电薄膜的研究现状,阐述了该薄膜及其探测器的制备技术和研究动向。 相似文献
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非制冷型热释电薄膜红外探测器的制备及应用 总被引:1,自引:0,他引:1
介绍了室温非制冷型热释电薄膜红外探测器的原理和优势。从热释电材料的选择及器件的结构设计等方面阐述了热释电薄膜红外探测器的制备技术和研究动向,并归纳了器件的主要应用领域。 相似文献
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热释电探测器是一种室温宽光谱响应的红外探测器。它在分析仪器中有广泛的应用。获得宽光谱响应的常规方法是在光敏面内涂敷金黑等吸收系数高的材料。由于金黑吸收系数与波长成反比,为了提高长波吸收率,金黑的厚度必须很厚,这无疑会大大减小响应率。本文从Siberg推导的金属—透明介质—金属夹层结构的吸收率公式求得使吸收率与波 相似文献
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《Microelectronics Journal》2007,38(6-7):735-739
A new structure uncooled amorphous silicon (a-Si) microbolometer for infrared (IR) detection has been fabricated and characterized. New type of thermal isolation and IR absorption structures based on polyimide (PI) and bottom metal reflective layer are presented. The fabrication process is described in this paper. The as-prepared microbolometer has the advantage of low cost, high yield and moderate performance. The dependence of resistance with different aspect ratio on operating temperature has been investigated and the temperature coefficient of resistance (TCR) is achieved. Based on the measured responsivity and noise characteristics, the influence of detectivity on chopping frequency is discussed. According to the measurements and calculations results, the maximal TCR is −2.8% and at a bias voltage of 5 V, the maximum detectivity of 1.7×108 cm Hz1/2 W−1 is achieved at chopping frequency of 30 Hz. 相似文献
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《Electron Devices, IEEE Transactions on》2009,56(9):1935-1942
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以多孔硅作为绝热层材料,采用超高真空对靶磁控溅射镀膜法,在多孔硅样品表面和硅基底表面沉积氧化钒薄膜。实验采用电化学腐蚀法制备多孔硅,利用场致发射扫描电子显微镜观测了孔隙率为50%,60%,70%三个多孔硅样品的微观形貌。利用显微喇曼光谱法测量其热导率,分别为8.16,7.28和0.624W/mK;利用纳米压入仪测量氧化钒薄膜的显微硬度和杨氏模量,测得沉积在孔隙率为50%,60%,70%的多孔硅基底上氧化钒薄膜的显微硬度分别为1.917,0.928和0.13GPa,杨氏模量分别为31.087,16.921和2.285GPa,而沉积在单晶硅基底的氧化钒薄膜的显微硬度和杨氏模量分别为10.919GPa和193.792GPa,并分析了微观结构差异对多孔硅绝热性能和机械性能的影响,为非制冷红外探测器的工艺制作过程提供一定的热学力学参数。 相似文献
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R. T. Rajendra Kumar B. Karunagaran D. Mangalaraj Sa. K. Narayandass P. Manoravi M. Joseph Vishnu Gopal R. K. Madaria J. P. Singh 《Journal of Infrared, Millimeter and Terahertz Waves》2003,24(3):327-334
Vanadium oxide thin films are the potential candidates for uncooled microbolometers due to their high temperature coefficient of resistance (TCR) at room temperature. A 2D array of 10-element test microbolometer without air-gap thermal isolation structure was fabricated with pulsed laser deposited vanadium oxide as IR sensing layer for the first time. Infrared responsivity of the uncooled microbolometer was evaluated in the spectral region 8-15 μm. The device exhibits responsivity of about 12 V/W at 30 Hz chopper frequency for 20 μA bias current. Thermal time constant (τ), Thermal conductance (G) and thermal capacitance (C) are the thermal parameters characterize the performance of the uncooled microbolometer infrared detectors are determined as 15 ms, ~10-3 W/K and ~3.5 × 10-5 J/K respectively. The influence of the thermal parameters on the performance of the microbolometer is discussed. 相似文献
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叙述了用微细加工技术制作的非致冷单片式半导体薄膜电阻辐射热红外探测器的结构模型。基于模型所预测的性能与实验结果相符合。性能分析表明,高的热绝缘和低噪声是高性能微辐射热红外探测器的关键。 相似文献
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New application of polyimide (PI) is introduced in this paper. PI film of 27 μm is achieved, and the excellent thermal-isolation performance of the film is simulated by ANSYS. The surface of film is flat, which is suitable for the fabrication of other materials such as aluminum and silicon nitride. The PI film is used as thermal-isolation layer of uncooled a-Si thin film transistor infrared sensors in this research, and the fabrication process is greatly simplified. 相似文献
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《Electron Device Letters, IEEE》1987,8(9):437-439
Many monolithic fiber-optic preamplifiers use a bipolar transistor as the front-end device due to process restraints, despite the relatively poor noise performance of the bipolar transistor. This paper shows that there is an optimum emitter aspect ratio in a bipolar transistor operated at the optimum collector current for noise performance. An expression for this optimum emitter aspect ratio is developed and shown to agree very well with simulation results. 相似文献