Determination of Cu(In1−xGax)3Se5 defect phase in MBE grown Cu(In1−xGax)Se2 thin film by Rietveld analysis

Quantitative phase analysis of Cu(In_1−xGa_x)Se₂ (CIGS) thin film grown over Mo coated soda lime glass substrates was studied by Rietveld refinement process using room temperature X-ray data at θ-2θ mode. Films were found to contain both stoichiometric Cu(In_1−xGa_x)Se₂ and defect related Cu(In_1−xGa_x)₃Se₅ phases. Best fitting was obtained using crystal structure with space group I-42d for Cu(In_1−xGa_x)Se₂ and I-42m for Cu(In_1−xGa_x)₃Se₅ phase. The effects of Ga/III (=Ga/In+Ga=x) ratio and Se flux during growth over the formation of Cu(In_1−xGa_x)₃Se₅ defect phase in CIGS was studied and the correlation between quantity of Cu(In_1−xGa_x)₃Se₅ phase and solar cell performance is discussed.     

Photoconductivity of Cu(In, Ga) Se2 films

Polycrystalline CuIn_{1 − x}Ga_xSe₂ (0 ≤ x < 0.3) films (CIGS) were deposited by coevaporating the elements from appropriate sources onto glass substrates (substrate temperature 720 to 820 K). Photoconductivity of the polycrystalline CIGS films with partially depleted grains were studied in the temperature range 130–285 K at various illumination levels (0–100 mW/cm²). The data at low temperature (T < 170 K) were analyzed by the grain boundary trapping model with monovalent trapping states. The grain boundary barrier height in the dark and under illumination were obtained for different x-values of CuIn_1−xGa_xSe₂ films. Addition of Ga in the polycrystalline films resulted in a significant decrease in the barrier height. Variation of the barrier height with incident intensity indicated a complex recombination mechanism to be effective in the CIGS films.     

X-ray diffraction study on LixCoO2 below ambient temperature

In order to elucidate the structural change of Li_xCoO₂ with temperature (T), powder X-ray diffraction measurements have been carried out using a synchrotron radiation source in the T range between 300 and 90 K for the samples with x=1.02, 0.60, 0.56, and 0.53. The samples with x<1.02 were prepared by an electrochemical reaction in a non-aqueous lithium cell. The x=1.02 and 0.60 samples are in a rhombohedral phase () in the whole T range measured. On the other hand, the x=0.56 and 0.53 samples exhibit a structural transition around 140 K, although the both samples are in a monoclinic phase (C2/m) down to 90 K. That is, the angle between a_M- and c_M-axis (β_M) increases monotonically down to 150 K, then increases more rapidly with further lowering T. The values of and a_M/b_M, which are parameters to characterize a monoclinic distortion from the hexagonal symmetry, are and a_M/b_M<1.732 above 140 K, while and a_M/b_M≈1.732 below 140 K. This suggests that the monoclinic distortion below 140 K is mainly caused by a gliding along the basal plane.     

CuInxGa1−xSe2 as an efficient photocathode for solar hydrogen generation

Utilizing the energy in the sun to efficiently split water into hydrogen and oxygen can have a huge beneficial impact on a future post-carbon energy system. There is still, however, some way to go before this concept will be fully competitive. At the heart of the problem is finding and designing materials that can drive the photoreaction in an efficient and stable way. In this work we demonstrate how CIGS (CuIn_xGa_1−xSe₂), can be used for photo reduction of water into hydrogen. CIGS, which is a proven good solar cell material, does not in itself have the appropriate energetics to drive the reaction to any larger extent. Here we show that by utilizing a solid state pn-junction for charge separation and a catalyst deposited on the surface, the efficiency is significantly improved and photocurrents of 6 mA/cm² are demonstrated for the reduction reaction in the configuration of a photo-electrochemical cell. The stability of CIGS in water under illumination turns out to be a problem. In our present set-up, we demonstrate that separation between the charge carrier generation, which takes place in the solar cell, from the catalysis, which takes place in the electrolyte leads to improved stability, while keeping the essential functions of the processes. By incorporating appropriate charge separation layers and optimizing the catalytic conditions at the surface of the electrodes, photocurrents in excess of 20 mA/cm² are reached for the reduction half reaction, demonstrating how essentially the full potential of CIGS as an efficient absorber material can be utilized in photocatalytic reduction of water into hydrogen.     

Electrodeposition of CuInxGa1−xSe2 thin films

CuIn_xGa_1−xSe₂ (CIGS) polycrystalline thin films with various Ga to In ratios were grown using a new two-step electrodeposition process. This process involves the electrodeposition of a Cu–Ga precursor film onto a molybdenum substrate, followed by the electrodeposition of a Cu–In–Se thin film. The resulting CuGa/CuInSe bilayer is then annealed at 600°C for 60 min in flowing Argon to form a CIGS thin film. The individual precursor films and subsequent CIGS films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and Auger electron spectroscopy. The as-deposited precursor films were found to be crystalline with a crystal structure matching that of CuGa₂. The annealed bi-layers were found to have the same basic chalcopyrite structure of CuInSe₂, but with peak shifts due to the Ga incorporation. Energy dispersive spectroscopy results show that the observed shifts correlate to the composition of the films.     

Synthesis and characterization of one-step electrodeposited CuIn(1−x)GaxSe2/Mo/glass films at atmospheric conditions

CuIn_(1−x)Ga_xSe₂ (CIGS) thin films were prepared by one-step electro-deposition technique from a salt bath coupled with thiocyanate complex electrolytes followed by annealing in argon atmosphere at 300 °C. The influence of deposition reduction potentials as well as the salt concentrations on the structure, morphology, composition and the optical properties were performed. A reproducible Cu-In-Ga-Se precursor layer deposition with consistent composition control was demonstrated. The as-deposited films exhibit an amorphous behavior; however the films displayed good crystallization after annealing. The films show very uniform and dense grain formation with platelet-like nanostructures. The optical properties of the films are modified due to annealing. The electrical conductivity measurements demonstrate that the transport mechanism is influenced by three different temperature regions: the ionization, extrinsic and intrinsic regions, respectively, as found in other semiconductors. However, the annealed films display downturn in conductivity at low temperature indicating that there may be trapping at localized sites or scattering of the free carriers, which may be attributed to the over growth and defect sites. The electro-deposition technique demonstrates promise of growing high-quality CIGS thin films.     

Carrier collection in Cu(In,Ga)Se2 solar cells with graded band gaps and transparent ZnO:Al back contacts

Cu(In,Ga)Se₂ Solar cells with graded band gap and efficiencies up to 13% have been fabricated on transparent ZnO:Al back contacts. The back contact structure includes a transparent 10 nm thin Mo interlayer with NaF precursor between the ZnO:Al and the Cu(In,Ga)Se₂ absorber that transforms the blocking ZnO:Al/Cu(In,Ga)Se₂ interface into an Ohmic back contact. To investigate the electronic quality of the back contact, the cells are analyzed by internal quantum efficiency measurements under illumination from front and back side. A new semianalytical model for the quantum efficiency of graded band gap absorbers yields quantitative information about the back contact recombination velocity as well as optical and electronic material parameters of the absorber layer. Band gap grading significantly increases carrier collection. However, in the immediate vicinity of the back contact carrier collection is limited by a high ratio of back contact recombination velocity and diffusion constant .     

Impact of substrate roughness on CuInxGa1−xSe2 device properties

In comparison to the traditional use of glass substrates, CuIn_xGa_1−xSe₂ (CIGS) deposited onto metal substrates offers improved device cooling under concentration, economical large-scale roll-to-roll processing, and applicability towards lightweight as well as flexible products. However, unlike glass, metal foils tend to exhibit rough surfaces. This study quantifies the effect of substrate roughness on CIGS device performance. Several substrate types with differing average roughnesses were examined. The frequencies of the surface features contributing to roughness are also examined via several different analytical techniques. Devices were prepared and characterized on steel foils, Mo foil, and glass.     

CuIn1−xGaxSe2-based photovoltaic cells from electrodeposited and chemical bath deposited precursors

We have fabricated 13.7%- and 7.3%-efficient CuIn_1−xGa_xSe₂ (CIGS)-based devices from electrodeposited and chemical bath deposited precursors. As-deposited precursors are Cu-rich films and polycrystalline (grain size is very small) in nature. Only preliminary data is presented on chemical bath deposited precursors. Additional In, Ga, and Se were added to the precursor films by physical evaporation to adjust the final composition to CuIn_1−xGa_xSe₂. Addition of In and Ga and also selenization at high temperature are very crucial to obtain high efficiency devices. Three devices with Ga/(In+Ga) ratios of 0.16, 0.26, and 0.39 were fabricated from electrodeposited precursors. The device fabricated from the chemical bath deposited precursor had a Ga/(In+Ga) ratio of 0.19. The films/devices have been characterized by inductive-coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance–voltage, and spectral response. The compositional uniformity of the electrodeposited precursor films both in the vertical and horizontal directions were studied. The electrodeposited device parameters are compared with those of a 17.7% physical vapor deposited device.     

Fabrication of wide-gap Cu(In1−xGax)Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness

The correlation of the cell performance of wide-gap Cu(In_1−xGa_x)Se₂ (CIGS) solar cells with the thickness of highly resistive i-ZnO layers, which are commonly introduced between the buffer layer and the transparent conductive oxide (TCO) layer in CIGS solar cell devices, was studied. It was found that cell parameters, in particular, the fill factor (F.F.) varied with the thickness of the i-ZnO layers and the variation of the F.F. was directly related to cell efficiency. A 16%-efficiency was achieved without use of an anti-reflection coating from wide-gap (E_g1.3 eV) CIGS solar cells by adjusting the deposition conditions of the i-ZnO layers.     

Nearly carbon-free printable CIGS thin films for solar cell applications

In order to fabricate low cost and printable CuIn_xGa_1−xSe_yS_2−y (CIGS) thin film solar cells, a precursor solution based method was developed. Particularly, in this method, nearly carbon-free CIGS film was obtained by applying a three-step heat treatment process: the first for the elimination of carbon residue by air annealing, the second for the formation of CIGS alloy by sulfurization, and the third for grain growth and densification in the CIGS film by selenization. The film also revealed very large grains with a low degree of porosity, similar to those produced by the vacuum based method. A solar cell device with this film showed current-voltage characteristics of J_sc=21.02 mA/cm², V_oc=451 mV, FF=47.3%, and η=4.48% at standard conditions.     

Cu(In,Ga)Se2 based photovoltaic structure by electrodeposition and processing

CuIn_1−xGa_xSe₂ (CIGS) thin films were formed from an electrodeposited CuInSe₂ (CIS) precursor by thermal processing in vacuum in which the film stoichiometry was adjusted by adding In, Ga and Se. The structure, composition, morphology and opto-electronic properties of the as-deposited and selenized CIS precursors were characterized by various techniques. A 9.8% CIGS based thin film solar cell was developed using the electrodeposited and processed film. The cell structure consisted of Mo/CIGS/CdS/ZnO/MgF₂. The cell parameters such as J_sc, V_oc, FF and η were determined from I–V characterization of the cell.     

The performance of CuIn1−xGaxSe2-based photovoltaic cells prepared from low-cost precursor films

In this paper we report the 15.4%- and 13.4%-efficient CuIn_1−xGa_xSe₂ (CIGS)-based devices from electrodeposited (ED) and electroless deposited (EL) precursors. The efficiency of the device prepared from electroless precursor film has been improved from 12.4% to 13.4%. The dependence of quantum efficiencies on reverse-bias voltage has been measured for a 15.4%-efficient ED device, 18.8%-efficient physical-vapor-deposited device, and 14.2%-efficient Cd-free device. The purpose of this work is to explore and improve the current collection mechanism.     

Structure, morphology, and cathode performance of Li1−x[Ni0.5Mn1.5]O4 prepared by coprecipitation with oxalic acid

The cathode materials Li_1−x[Ni_0.5Mn_1.5]O₄ prepared by coprecipitation from acetate solution by oxalic acid and annealing at 900 °C in air had the preferred disordered Ni and Mn on the 16d octahedral sites of a spinel structure. The coprecipitation method provides better crystallinity than the phase previously obtained by quenching from the melt. Polycrystalline octahedral-shaped particles with smooth surfaces contained trace amounts of a Li_yNi_1−yO impurity that introduced some Mn(III) into the spinel phase. Half-cells cycled at 0.2 C rate between 3.5 and 4.8 V versus Li exhibited a flat voltage V ≈ 4.7 V with a small step at x ≈ 0.5 and a capacity at room temperature of 130 mAh g⁻¹ that showed no fade after 50 cycles. A small capacity fade was initiated with a cut-off voltage ≥4.9 V; a significant capacity loss between 2 and 5 C cycling rates was reversible to 134 mAh g⁻¹ on returning to 0.1 C after 50 cycles at 10 C between 3.5 and 5.0 V.