Synthesis of nitrogen incorporated diamond-like carbon thin films using microwave surface-wave plasma CVD

Nitrogenated diamond-like (DLC:N) carbon thin films have been deposited by microwave surface wave plasma chemical vapor deposition on silicon and quartz substrates, using argon gas, camphor dissolved in ethyl alcohol composition and nitrogen as plasma source. The deposited DLC:N films were characterized for their chemical, optical, structural and electrical properties through X-ray photoelectron spectroscopy, UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current–voltage characteristics. Optical band gap decreased (2.7 to 2.4 eV) with increasing Ar gas flow rate. The photovoltaic measurements of DLC:N / p-Si structure show that the open-circuit voltage (V_oc) of 168.8 mV and a short-circuit current density (J_sc) of 8.4 μA/cm² under light illumination (AM 1.5 100 mW/cm²). The energy conversion efficiency and fill factor were found to be 3.4 × 10^{− 4}% and 0.238 respectively.     

Boron-doped hydrogenated amorphous carbon films grown by surface-wave mode microwave plasma chemical vapor deposition

We report the effects of boron (B) doping on optical and structural properties of the hydrogenated amorphous carbon thin films grown by surface-wave mode microwave plasma (SW-MWP) chemical vapor deposition (CVD) on n-type silicon and quartz substrates at room temperature. Argon and acetylene were used as a carrier and carbon source gases respectively. Analytical methods such as X-ray photoelectron spectroscopy (XPS), Nanopics 2100/NPX200 surface profiler, JASCO V-570 UV/VIS/NIR spectroscopy, Fourier transform infrared spectroscopy (FT-IR) and Raman spectroscopy were employed to investigate the properties of the films. Low atomic concentration of B (0.08 at.%) was found in the doped film. The optical band gap of the undoped film was 2.6 eV and it decreased to 1.9 eV for the B-doped film. Structural property shows the crystalline structure of the film and it has changed after incorporating B as a dopant. The structural modifications of the films leading to being more graphite in nature were confirmed by the Raman and FT-IR characterization.     

Effects of iodine doping on optoelectronic properties of diamond-like carbon thin films deposited by microwave surface wave plasma CVD

We report the effects of iodine (I) doping on the electrical and optical properties of diamond-like carbon (DLC) thin films grown on silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition at low temperature (<100 °C). For film deposition, we used argon gas with methane or camphor dissolved with ethyl alcohol composition as plasma source. The optical gap and photoconductivity measurements of the samples were carried out before and after the iodine doping. The results show that optical gap dropped from 3.4 to 0.9 eV corresponding to nondoping to iodine-doping conditions, respectively. The photovoltaic measurements show that the open-circuit voltage (V_oc) and short-circuit current density (J_sc) of I-doped DLC film deposited on n-type silicon substrate under light illumination (AM1.5, 100 mW/cm²) were approximately 177 mV and 1.15 μA, respectively, and the fill factor was found to be 0.217.     

Nitrogen incorporated diamond-like carbon films by microwave surface wave plasma CVD

Nitrogen incorporated diamond like carbon films have been deposited by microwave surface wave plasma chemical vapor deposition (MW-SWP-CVD), using methane (CH₄) as the source of carbon and with different nitrogen flow rates (N₂ / CH₄ flow ratios between 0 and 3). The influence of the nitrogen incorporation on the optical, structural properties and surface morphology of the carbon films were investigated using different spectroscopic techniques. The nitrogen has been incorporated into DLC:N films which was confirmed by the X-ray photoelectron spectroscopy (XPS) measurement. Moreover, the nitrogen incorporation was accompanied by a variation in the optical gap, which was attributed to the removal or creation of band tail states.     

Diamond-like carbon thin films by microwave surface-wave plasma CVD aimed for the application of photovoltaic solar cells

The nitrogen doped diamond-like carbon (DLC) thin films were deposited on quartz and silicon substrates by a newly developed microwave surface-wave plasma chemical vapor deposition, aiming the application of the films for photovoltaic solar cells. For film deposition, we used argon as carrier gas, nitrogen as dopant and hydrocarbon source gases, such as camphor (C₁₀H₁₆O) dissolved with ethyl alcohol (C₂H₅OH), methane (CH₄), ethylene (C₂H₄) and acetylene (C₂H₂). The optical and electrical properties of the films were studied using X-ray photoelectron spectroscopy, Nanopics 2100/NPX200 surface profiler, UV/VIS/NIR spectroscopy, atomic force microscope, electrical conductivity and solar simulator measurements. The optical band gap of the films has been lowered from 3.1 to 2.4 eV by nitrogen doping, and from 2.65 to 1.9 eV by experimenting with different hydrocarbon source gases. The nitrogen doped (flow rate: 5 sccm; atomic fraction: 5.16%) film shows semiconducting properties in dark (i.e. 8.1 × 10^{− 4} Ω^{− 1} cm^{− 1}) and under the light illumination (i.e. 9.9 × 10^{− 4} Ω^{− 1} cm^{− 1}). The surface morphology of the both undoped and nitrogen doped films are found to be very smooth (RMS roughness ≤ 0.5 nm). The preliminary investigation on photovoltaic properties of DLC (nitrogen doped)/p-Si structure show that open-circuit voltage of 223 mV and short-circuit current density of 8.3 × 10^{− 3} mA/cm². The power conversion efficiency and fill factor of this structure were found to be 3.6 × 10^{− 4}% and 17.9%, respectively. The use of DLC in photovoltaic solar cells is still in its infancy due to the complicated microstructure of carbon bondings, high defect density, low photoconductivity and difficulties in controlling conduction type. Our research work is in progress to realize cheap, reasonably high efficiency and environmental friendly DLC-based photovoltaic solar cells in the future.     

The role of pressure on thin amorphous carbon films deposited using microwave surface wave plasma CVD

We report the effects of gas composition pressure (GCP) on the optical, structural and electrical properties of thin amorphous carbon (a-C) films grown on p-type silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (MW SWP CVD). The films, deposited at various GCPs ranging from 50 to 110 Pa, were studied by UV/VIS/NIR spectroscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and current–voltage characteristics. The optical band gap of the a-C film was tailored to a relatively high range, 2.3–2.6 eV by manipulating GCPs from 50 to 110 Pa. Also, spin density strongly depended on the band gap of the a-C films. Raman spectra showed qualitative structured changes due to sp³/sp² carbon bonding network. The surfaces of the films are found to be very smooth and uniform (RMS roughness < 0.5 nm). The photovoltaic measurements under light illumination (AM 1.5, 100 mW/cm²) show that short-circuit current density, open-circuit voltage, fill factor and photo-conversion efficiency of the film deposited at 50 Pa were 6.4 μA/cm², 126 mV, 0.164 and 1.4 × 10^− 4% respectively.     

Boron doped amorphous carbon thin films grown by r.f. PECVD under different partial pressure

Boron doped hydrogenated amorphous carbon (a-C) thin films have been deposited by r.f.-plasma CVD with a frequency of 13.56 MHz at room temperature using pure methane as a precursor of carbon source mixed with hydrogen (H₂) as a carrier gas. The films were prepared by varying the r.f. power, different flow rates of CH₄, and partial pressure of mixed gas (CH₄/H₂) using solid boron as a target. The thickness, structural, bonding and optical properties of the as-deposited films were studied by Alpha step surface profiler, Raman, FT-IR, XPS and UV–visible spectroscopy. It was found that changing the deposition pressure in presence of solid boron dopant in the r.f. PECVD process has a profound effect on the properties of the deposited films, as evidenced from their Raman scattering and optical results. The grown p-C: B films were found very smooth and thickness in the range of 240 to 360 nm for 1 h deposition. Films deposited at lower pressure appear brownish color whereas those deposited at higher pressure appear pale yellowish. The as-deposited film is found to be dominated by sp² rather than sp³, which might be due to the formation of small crystallites. The optical band gap is found to be reduced from 2.601.58 eV as the partial pressure of CH₄/H₂ gas is reduced.     

Vibrational properties of nitrogen-doped ultrananocrystalline diamond films grown by microwave plasma CVD

Ultrananocrystalline diamond (UNCD) films grown in an argon-rich Ar/CH₄/H₂ microwave plasma with nitrogen gas added in amounts of 0%–20% were studied by Raman spectroscopy with multiple excitation wavelengths in the range of 244–647 nm and by optical absorption in UV–visible. The Raman spectra have demonstrated the presence of diamond, amorphous carbon and polyacetylene in the UNCD films. Analysis of vibrational and optical properties of amorphous carbon phase proves that nitrogen stimulates the transition from amorphous carbon into an ordered graphite-like structure with narrowed optical band gap, which is supposed to be responsible for the high electrical conductivity of the N-doped UNCD.     

Bonding defects and optical band gaps of DLC films deposited by microwave surface-wave plasma CVD

The effects of CH₄ / C₂H₄ flow ratio and annealing temperature on the defect states and optical properties of diamond-like carbon (DLC) films deposited by novel microwave surface-wave plasma chemical vapour deposition (MW SWP CVD) are studied through UV/VIS/NIR measurements, atomic force microscopy, Raman spectroscopy and electron spin resonance analysis. The optical band gap of DLC has been tailored between a relatively narrow range, 2.65–2.5 eV by manipulating CH₄ / C₂H₄ flow ratio and a wide range, 2.5–0.95 by thermal annealing. The ESR spin density varied between 10¹⁹ to 10¹⁷ spins/cm³ depending on the CH₄ / C₂H₄ flow ratio (1 : 3 to 3 : 1). The defect density increased with increasing annealing temperature. Also, there is a strong dependence of spin density on the optical band gap of the annealed-DLC films, and this dependency has been qualitatively understood from Raman spectra of the films as a result of structural changes due to sp³/sp² carbon bonding network. The surfaces of the films are found to be very smooth and uniform (RMS roughness < 0.5 nm).     

Local structure of composite Cr-containing diamond-like carbon thin films

Composite Cr-containing hydrogenated amorphous diamond-like carbon (Cr-DLC) films were synthesized by a hybrid PVD/CVD plasma-assisted deposition process. In a recent study, it was found that Cr-DLC films with <∼12 at.% Cr possess excellent tribological properties. However, the role of Cr in inducing these characteristics is not clear. In the present report, the local structure around the Cr atoms in the latter films was studied as a function of Cr content by X-ray absorption spectroscopy. The Cr K-edge X-ray absorption near edge structure spectra show that Cr in DLC has a chemical state similar to that of chromium carbide. Analysis of the extended X-ray absorption fine structure spectra shows that at low Cr content (<0.4 at.% Cr), Cr is dissolved in the amorphous DLC matrix forming an atomic-scale composite. Simulation studies suggest that in the latter films, Cr tends to be present as very small atomic clusters of 2-3 Cr atoms. At higher Cr contents (>1.5 at.%), Cr is present as nanoparticles (<10 nm) of a defected carbide structure forming a nanocomposite.     

Thermal gas effusion from diamond-like carbon films

Good-quality diamond-like carbon films (6 at.% H₂, 2400 kgf/mm² microhardness, 2.7 eV bandgap, higly insulating) have been obtained by the DC glow discharge decomposition of acetylene. Mass spectroscopic thermal effusion measurements were carried out on the films deposited under different deposition conditions. Analyses of hydrogen in conjunction with hydrocarbon effusing species yield information on the microstructure and nature of C---H bonding configurations. It is shown to be a useful analytical tool to study hydrogenated amorphous carbon films of different microstructures varying from polymer-like to diamond-like.     

Iodine doping of amorphous diamond-like carbon films

Amorphous diamond-like carbon (a:DLC) films have been doped by incorporation of iodine during the films deposition. XPS and AES analysis shows the existence of iodine atoms with constant concentration of 0.9% along the iodine doped DLC film (a:I-DLC). The optical and electronic properties of the doped films were studied. Optical measurements in the visible light show that iodine affects the interband absorption of the a:DLC films. Iodine causes decreasing of the optical energy gap, from 1.07 to 0.78 eV and affects the density of states at the conducting band. Like the optical measurements, electrical measurements show that iodine also decreases the activation energy of the films from 0.34 to 0.22 eV. This shows that although both gaps decrease, the optical energy gap remains different from that of electrical gap, also after doping.     

Mechanical properties of DLC films prepared inside of micro-holes by pulse plasma CVD

Diamond-like carbon (DLC) films are metastable amorphous carbon materials with superior tribological characteristics. In order to improve wear resistance of micro-extrusion dies with numerous imperceptible holes, DLC films were deposited on the inner wall surface of model dies with holes of 2 and 0.9 mm in diameter, and 20 mm in depth by using pulse plasma CVD method. This paper will discuss how argon gas, deposition pressure and time affect the characteristics of films deposited on the inner wall surface of dies. This micro-coating method can be applied widely for inner wall surface treatment of components with thin holes.     

Optoelectronic properties of nitrogenated amorphous carbon films synthesized by microwave surface wave plasma chemical vapor deposition system

The n-type nitrogen doped amorphous carbon (a-C:N) thin films have been grown by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) system on silicon, quartz and ITO substrates at different nitrogen flow rates (1 to 4 sccm). The effects of nitrogen doping on chemical, optical, structural and electrical properties were studied through X-ray photoelectron spectroscopy, Nanopics 2100/NPX200 surface profiler, UV/VIS/NIR spectroscopy, Raman spectroscopy and solar simulator measurements. Argon, acetylene and nitrogen are used as plasma sources. Optical band gap decreased and nitrogen atomic concentration (%) increased with increasing nitrogen flow rate as a dopant. The a-C:N/p-Si based device exhibits photovoltaic behavior under illumination (AM 1.5, 100 mW/cm²), with a maximum open-circuit voltage (V_oc), short-circuit current (J_sc) and fill factor of 4.2 mV, 7.4 μA/cm² and 0.25 respectively.     

Electrodeposition mechanism of hydrogen-free diamond-like carbon films from organic electrolytes

A brief introduction on the development of electrodeposition of diamond-like carbon (DLC) films was given, and our experiments were done, emphasizing on how to deposit hydrogen-free DLC films. Methanol, acetonitrile and N,N-dimethyl formamide (DMF) were chosen as electrolytes, while Si and conductive glass were used as substrates. The sample deposited on Si through methanol was the only one in this comparative research that produced hydrogen-free DLC film as it was indicated by the FTIR spectroscopy. Two explanations, based on reaction mechanism, were proposed to explain this fact. It was believed that the reaction rate and the effect of hydroxyl groups in the molecules of the electrolytes played important roles in the deposition of hydrogen-free DLC films.     

Fabrication of DLC thin films with improved diamond-like carbon character by the application of external magnetic field

Diamond-like carbon (DLC) thin films were grown on Si-(100) substrates by a magnetically-assisted pulsed laser deposition (PLD) technique. The role of magnetic field on the structural, morphological, mechanical properties and deposition rate of DLC thin films has been studied. The obtained films were characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM) and nanoindentation techniques. It was found that the diamond-like character, thickness and deposition rate of the DLC films increase in the presence of magnetic field. The films deposited under magnetic field exhibit a denser microstructure and smoother surface with lower surface roughness. Meanwhile, the mechanical properties of the magnetically processed DLC thin films experience an improvement, relative to the conventionally processed ones. It seems that the DLC films deposited under magnetic field can be better candidate for hard and wear resistance coating applications.     

液相沉积类金刚石膜的沉积机理研究

根据电化学的相关理论,提出了钛合金表面液相沉积DLC膜的反应机理,给出了可能电极过程,认为膜是通过甲基阳离子的亲电取代反应而不断生长。讨论了氢原子对金刚石结构的稳定作用,并解释了实验条件对膜结构和性能的影响。     

In situ measurement of stresses in diamond-like carbon films

In situ determination of stresses in thin films can be used as an important tool to assist process development as well as to understand the thermodynamics of film formation. A simple technique for the measurement of stresses in growing films is described here. The technique consists of measuring the displacement of a laser beam reflected from the film surface. Displacement is induced by changes in the radius of the curvature of the substrate resulting from stresses in the film. The detector sensitivity at the used wavelength (635 nm) is approximately 12 mV μm⁻¹, for which our experimental set-up is equivalent to 4 mV μrad⁻¹. The actual data collected consist of the reflected beam displacement vs. time, and provides at any instant the value of the average stress. By knowing the deposition rate, time is directly correlated with film thickness, and the local stress can be determined. Examples of measurement of stresses in tetragonally bonded amorphous carbon films prepared by filtered cathodic arc are presented, as well as how this technique can be used to design the deposition process to virtually eliminate intrinsic stresses.     

Electrically conductive properties of tungsten-containing diamond-like carbon films

Tungsten-containing diamond-like carbon films with different metal concentrations were investigated. The films of several hundred nanometers in thickness were deposited on the silicon wafer using RF-PECVD (radio frequency plasma enhanced chemical vapor deposition) method. During deposition, metal component was co-sputtered using DC magnetron of tungsten target. The six samples with the concentration of 3.8, 6.1, 8.0, 16.3, 24.3 and 41.4 at.% of tungsten were made. The structural analyses were performed by TEM (transmission electron microscope) and Raman spectroscopy. These results indicated that tungsten clusters were well dispersed in amorphous carbon host matrix in the case of tungsten concentration from 3.8 to 24.2 at.%. However, no such a structure can be observed in the sample with 41.4 at.%. The AC electrical resistance was measured in the temperature range of 2–300 K using four-probe method in vacuum condition. The observed temperature dependence of electrical conductivity can be expressed by σ=σ₀exp−2(C₀/kT)^1/2 and tungsten concentration from 3.8 at.% to 24.2 at.%. In addition, the sample with 41.4 at.% showed the resistive superconducting transition at T_c of around  5.5 K.