H.264中DCT/IDCT/Hadamard变换多时钟方式的FPGA实现

DCT/IDCT/Hadamard变换被广泛应用于多种视频编码标准中,而H.264/MPEG-4AVC作为新一代的视频压缩标准,它具有在相同图像质量下比其他视频压缩标准拥有更高的压缩率的特性[1],因此对于H.264/MPEG-4AVC中的DCT/IDCT/Hadamard变换的研究就有着十分重要的意义。对于H.264/MPEG-4AVC中变换算法进行分析,并且提出一种可用的高效的硬件实现电路结构,此电路结构能够并行计算4输入像素数据。     

一种新的视频编解码H.264/AVC

H.264/AVC(先进的视频编码)已经被作为下一代高清晰度DVD的标准,这种编解码技术的普及正日益增长。最新报告显示,业内相当多的公司声称已制定出采用H.264/AVC标准的计划并推出了供展示的产品样品。 目前正在将由ITU-T与MPEG(移动图象专家组)联合开发的此项视频压缩标准(全称为H.264或MPEG-4pt.10/AVC)应用到产品中的公司包括:美国苹果公司、日本索尼公司、英国电信、法国电信、英特尔公司、摩托罗拉、诺基亚、     

基于H.264编码的多屏共享系统研究

H.264/AVC是一种由ITU-T视频编码专家组合ISO/IEC JTC1动态图像专家组联合提出的高度压缩视频编码器标准。然而H.264/AVC编码器较高的运算复杂度提高了多屏共享系统的延迟时间。H.264/AVC由多种开源的实现,其中X264因简单高效而得到广泛的应用。在此对多频共享系统的关键技术进行实现,分析X264编码器提供的运动估计算法并且提出一种优化的算法。实验表明,新的算法提高了编码的速度、减少了系统延迟时间,同时视频质量几乎没有产生损失。     

在FPGA上实现H.264/AVC视频编码标准

尽管H.264/AVC承诺将比已有视频编码标准具有更高的编码效率,它仍为系统架构师、DSP工程师和硬件设计人员带来了巨大的工程设计挑战。H.264/AVC标准引入了自1990年推出H.261之后视频编码标准演进过程中出现的大部分重大改变和算法间断(algorithmicdiscontinuities)。实现H.264/     

用于H．264（AVC）逆量化的硬件实现结构

量化运算广泛用于各种视频压缩标准中。本文提出一种用于实现H．264(AVC)文档[1]规定的逆量化硬件实现结构，能对输入的四个参数进行并行处理，能与常用于H．264反变换的快速配合使用。该结构由两个逆量化运算电路并行组成，关键路径(critical path)最多两个加法延时，与反变换组合能实现高效处理。     

一种嵌入H.264/AVC的镜头切变检测算法

提出一种嵌入H.264/AVC的视频镜头切变检测算法,利用视频压缩过程中运动估计与补偿的结果,提高了检测的效率,大大降低了检测的运算量;同时,为了针对镜头内可能出现的噪声帧,利用H.264/AVC标准中的多参考帧特性,进一步提出了镜头内噪声帧或噪声序列段的检测窗口算法.     

无线环境中H.264/AVC结构的改进

研究无线环境的视频传输是3G发展的关键.无线视频压缩编码不仅要求高压缩性能还要求适应无线网络的特征,这使得H.264/AVC成为目前惟一可选的编解码标准.文章介绍了H.264/AVC中适合用于无线视频传输的错误掩盖和抗误码的方法,讨论了基于无线网络如何应用这些方法,展望了无线环境中H.264/AVC需要的进一步改进.     

AVCHD高清摄像机及其视频格式

MPEG-4 AVC/H.264是目前最新的国际视频压缩标准,已被确定为下一代影视光盘(Blue-rayDisc)和HD DVD(高清DVD)的视频编码标准之一。简要介绍AVCHD高清摄像机的主要性能指标,重点对MPEG-4 AVC/H.264的特点和应用进行了分析。     

H.264/AVC整数DCT变换与量化的FPGA实现

根据H.264/AVC的变换量化原理,在FPGA上设计并实现了整数变换及量化部分。首先采用层次化、模块化的思想,将系统划分为多个功能模块,降低了硬件实现的复杂度,对DCT算法进行了优化,并对量化模块采用了流水线操作,最后设计全部采用Verilog硬件描述语言实现,并用Modelsim进行功能仿真,同时实验结果通过在Xilinx公司Vertex2P系列的XC2VP30 FPGA上验证。仿真及综合结果表明,与优化之前相比,系统所需时钟周期减少了29个,最大时钟频率可达到135.498MHz,为H.264标准的硬件实现提供了参考。     

超高清数字电视视频压缩编码技术

超高清电视逐步成为相关研究领域的热点话题.然而,其特有的超高分辨率特点也造成了数据量的不断增大,传统的H.264/AVC视频编码标准已经不能满足超高清电视的高压缩比要求,亟需新的视频压缩编码技术.基于此,新一代HEVC视频图像编码标准被提出,其不仅能实现与H.264/AVC标准一致的视频质量,而且其视频流的码率也减少了...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.