小面积PN结的光电特性

用Ｐ型硅材料制作了小面积ＮＰ结光电二极管，测试了二极管的光电特性．若按杂质扩散区的受光面积计算，在同样的光照下，小面积光电二极管的光电流密度是常规面积光电二极管光电流密度的１００倍以上．究其原因，在于杂质扩散区周边一个少数载流于扩散长度范围内，光生载流子对光电流的贡献．因此，当杂质扩散区为一个点时，光敏感区的面积趋于恒定值πＬ，有效光吸收区体积趋于（ＺπＬ）／３．     

无平面结敏感区硅光电探测器

研制了在平面ＰＮ结内无敏感区的硅光电探测器，测量了这种新结构器件的光电转换特性，说明在一定的均匀光照下，器件的光电池也有一定的值。利用本文的分析模型，可以得到该器件的有效光敏面积，从而可以确定衬底材料中光生少子的扩散长度。     

LP－MOCVD制作InGaAs／InPPIN光电二极管

采用ＬＰ－ＭＯＣＶＤ制作了ＩｎＧａＡｓ／ＩｎＰ平面型ＰＩＮ光电二极管。器件光敏面直径为７５μｍ，采用Ｚｎ扩散形成ＰＮ结，－６Ｖ偏置下其暗电流低达８～１３ｎＡ；反向击穿电压为６０Ｖ（１μＡ）。在没有增透膜时，对１．３μｍ注入光响应度为０．５６Ａ／Ｗ，光谱响应范围为０．９０～１．７０μｍ。     

提高光电二极管光/暗电流比值的途径

本文讨论提高光电二极管光电流与暗电流比值的一种方法。其要点是显著地减小PN结的面积。由于利用了侧向收集效应,光电流减少不多而暗电流明显地减小。     

高阻P型硅PN结中的光电转换

用高阻Ｐ型硅（ρ＝１２０００Ω·ｃｍ）单晶材料制作了ＰＮ结光敏二极管，对二极管的光电参数进行了测量。在激光辐射下，测出样管在光照前后的Ｃ－Ｖ实验曲线及样管在光照前后的电容相对变化可达到１００％，远大于低阻Ｐ型硅ＰＮ结在光照前后电容的相对变化率，并得到雾偏下样管电容在光照前后的相对变化率为１２１．７％。     

CMOS荧光波长检测芯片的设计与仿真

双结深光电二极管包括一深一浅两个光电二极管,深、浅pn结光电二极管的光电流比值I2/I1随入射光波长单调增加.文章基于0.5μm CMOS工艺对双结深光电二极管深、浅结光电流进行了数学建模和Matlab仿真.设计了片上信号处理电路,将双结深光电二极管深、浅结光电流比值转换成电压输出.仿真结果表明,信号处理电路的输出与ln(I2/I1)具有良好的线性关系.单片集成的CMOS波长检测芯片可用于未知荧光的波长检测和特异性分析.     

微弱光探测器件的设计考虑

制作了具有分离外保护环结构的硅光电二极管，这种结构的中心区域为光敏感区，与中心区周边相距５０μｍ处制作了宽度为３０μｍ的外保护环区。当器件应用时，可将外保护环二极管短路，中心区作光探测。这样，在光敏区表面周边约一个少于扩散长度范围内的反向漏电流被外保护环短路，对光敏区的暗电流无贡献，从而有效地减少了光探测器件的暗电流，降低了器件可测光的功率值。     

LP—MOCVD制作InCaAs／InP PIN发电二极管

采用ＬＰ－ＭＯＣＶＤ制作了ＩｎＧａＡｓ／ＩｎＰ平面型ＰＩＮ光电二极管。器件光敏面直径为Φ７５μｍ，采用Ｚｎ扩散形成ＰＮ结，－６Ｖ偏置下其暗电流低达８－１３ｎＡ；反向击穿电压为６０Ｖ。在没有增透膜时，对１．３μｍ注放光响应度为０．５６Ａ／Ｗ，光谱响应范围为０．９０－１．７０μｍ。     

GT322型全金属化耦合封装InGaAs/InP平面PIN光电二极管

(一)简要工作原理当该光电二极管的光敏区受到一定波长的光照射时,半导体吸收层中便产生光生载流子。在 PN 结反向偏置时,光生载流子在电场作用下漂移通过耗尽层,在外电路中产生光电流,实现光电转换。     

光电负阻晶体管(PNEGIT)的研制和特性分析

考虑到负阻晶体管ＮＥＧＩＴ的特性，设计和制造了在光强度１００ｌｘ和１０００ｌｘ的白炽灯光照射下输出光电流可分别达到０．６ｍＡ和１８ｍＡ的光电负阻晶体管ＰＮＥＧＩＴ，     

Silicon Photodiode with Very Small Sensitive Area

The silicon PN junction photodiode with very small sensitive area has been investigated.The device gets superhigh light current density JLS counted by the sensitive area in the planar PN junction.The superhigh light current density is due to the light current transferred by the photogenated minority carriers in the area around edges of the dopant diffused region.Then,we can determine the diffusion length of the photogenerated minority carriers in substance by measuring the light current of the PN junction photodiode with very small senitive area.     

Response of a P-N junction to a linearly decreasing current

A study is made to determine analytically the time variation of the terminal voltage of a p-n junction in response to a terminal current which starts with a large forward value and continues to decrease linearly until the reverse saturation is attained. It is shown that the period between the reversal of current and the reversal of voltage depends exclusively on the lifetime, diffusion length, and thermal equilibrium densities of minority carriers in both regions of the junction. For some cases, the period between the reversal of current and voltage reduces to half the lifetime of either of the two types of minority carriers. This property allows measuring the lifetime of minority carriers for certain p-n junctions by relatively simple means.     

从多子角度阐述p-n结理论

传统方法在分析p-n结理论时仅仅关注了过剩少子的扩散电流,但是随着其浓度梯度的降低,扩散电流趋于零,则电流的连续性将难以理解。另外,如果仅仅考虑过剩少子的注入,则无法理解"中性区"的电中性(即电中性条件将被破坏)。针对以上矛盾,以基本的器件物理为基础,分析并得到过剩多子必然存在于中性区,且其分布和数量与过剩少子相同,因而过剩多子的扩散电流也参与p-n结的电流输运。在充分考虑过剩多子的基础上,对p-n结的工作机理可以有更好、更深刻的理解。理想二极管方程在一些假设下仅仅考虑了空间电荷区两边过剩少子的扩散电流,提供了一个很巧妙地计算总电流的方法。     

双结光电二极管荧光检测单元暗电流优化设计

双结p+/n-well/p-sub光电二极管由于其较高灵敏度、低暗电流而成为荧光检测光电传感单元的最佳选择.文章基于0.5 μm CMOS工艺对双结p+/n-well/p-sub光电二极管进行了版图优化设计,有效减少了硅和二氧化硅界面对光电二极管光吸收区暗电流的影响.流片后测试表明优化后版图面积为100μtm×100 μm,双结p+/n-well/p-sub光电二极管单元的暗电流从11 pA减小到了6.5pA,光电流从2.15 nA稍有减弱到2.05 nA,光暗电流比值提高了60％.优化后的双结p+/n-well/p-sub光电二极管更适用于对微弱的荧光信号检测.     

Silicon photodiode with a grid <Emphasis Type="Italic">p-n</Emphasis> junction

Silicon photodiodes with a grid-structured p-region were studied. Analytical expressions for the capacitance of such photodiodes were derived. The influence of the cell sizes and diffusion length of minority carriers on the sensitivity of the silicon grid photodiode was analyzed in a spectral range of 0.6–1.0 μm. The experimental characteristics of photodiodes with a grid p-n junction with cell sizes of 50 and 110 μm are given. The factors controlling the spectral-characteristic features of these photodiodes are discussed.     

不同结构的碲镉汞长波光伏探测器的暗电流研究

摘要对B^ 注入的n-on-p平面结和分子束外延(MBE)技术原位铟掺杂的n-on-p台面异质结的碲镉汞(HgCdTe)长波光伏探测器暗电流进行了对比分析．与n-on-p平面结器件相比，原位掺杂的n-on-p台面异质结器件得到较高的零偏动态阻抗一面积值(RoA)．通过与实验数据拟合，从理论上计算了这两种结构的器件在不同温度下的RoA和在不同偏压下的暗电流，得到一些相关的材料和器件性能参数．     

深扩Zn平面条形激光器作用层注入载流子空间分布的分析

本文分析了深扩Zn平面条形激光器作用层注入载流子的空间分布。从理论上阐明了深扩Zn平面条形激光器的注入电流在P-Al_xGa_(1-x)As限制层沿结平面方向的扩展可以忽略。因此,注入载流子在其作用层的空间分布比普通平面条形激光器窄得多,进而其增益波导也窄得多。从理论上证明的结论:轻掺杂或不掺杂作用层深扩Zn平面条形激光器的水平横模稳定的主要原因是其增益波导窄。     

Forward current—Voltage and switching characteristics of p+-n-n+(epitaxial) diodes

The forward-biased current-voltage and forward-to-reverse biased switching characteristics of p⁺-n-n⁺epitaxial diodes are investigated. The manner in which the n-n⁺junction affects the flow of injected minority carriers in the epitaxial region is characterized by a leakage parameter a. Experimentally, for diodes with epitaxial film widths much less than a diffusion length, a "box" profile accurately describes the injected minority carriers in the n region. The current is found to increase with increased epitaxial width at a fixed bias. A general switching expression for epitaxial diodes is presented and the validity of the expression is shown experimentally. The experimental values of a, determined independently from the current-voltage and switching characteristics, are in good agreement and show that the leakage of the high-low junction is dominated by the recombination of minority carriers in the n-n⁺space-charge region.     

Si基HgCdTe变面积光伏探测器的变温特性研究

通过变面积Si基HgCdTe器件变温I-V测试和暗电流特性拟合分析,研究了不同偏压下n-on-p型Si基HgCdTe光伏器件的暗电流成分与Si基HgCdTe材料少子扩散长度和少子寿命随温度的变化规律.在液氮温度下,随着反向偏压的增大器件的表面漏电流在暗电流中所占比重逐渐增加.在零偏压下,当温度低于200 K时材料的少子...     

Some features of photocurrent generation in single- and multibarrier photodiode structures

In contrast to single barrier photodiode structures, multibarrier ones exhibit the effect of increasing the number of photogenerated carriers in the entire range of operating voltages, whereas the photocurrent generation in avalanche and injection photodiodes is characterized by the threshold behavior and is associated with changes in the dark carrier density. The suggested interpretation of the effect of internal photoelectric amplification will make it possible to estimate experimental current or voltage gains and detect photoelectric amplification in photodiode structures irrespective of their type.