Laser-Induced Crystallization of a Si1−x Ge x Microstructure

Laser-induced crystallization of SiGe was investigated using a crystallization technique of pulsed excimer KrF laser irradiation on a-SiGe films that were prepared by plasma-enhanced chemical vapor deposition on quartz. The crystallized SiGe sample was investigated by scanning electronic microscopy (SEM); the SiGe microcrystals are 0.5 m in size and embedded in the a-SiGe:H matrix. Strong photoluminescence with two peaks at 720 and 750 nm was observed at room temperature in the crystallized film, whereas the uncrystallized a-SiGe:H films emit do not emit light in the visible range. This indicates that laser-induced crystallization can be used to improve the luminescence efficiency for Si-based materials.     

Metamagnetic Phase Transitions in La1−x Nd x Mn2Si2

Experimental measurements for the magnetization at various temperatures are analyzed using a mean field model for the purely ferromagnetic spin configuration near the metamagnetic phase transitions in La_1?x Nd _x Mn₂Si₂ (x=0.3) at a constant magnetic field (50 mT). By fitting the temperature dependence of the magnetization from the free energy in the mean field model to the experimental data for this compound, the coefficients in the free energy expansion are determined. Our analysis of the magnetization describes a first-order character of the metamagnetic transition in La_1?x Nd _x Mn₂Si₂ (x=0) on the basis of the mean field model studied here.     

Si基Si1—x—yGexCy合金生长中C的影响

报道了Si基Si1-x-yGexCy合金生长中C对Ge组分和生长速率的抑制作用,提出一个Si,Ge、C原子的排列构型,从理论上给出了C对Ge组分的抑制度和Ge/C原子比的关系,并指出在富Ge情况下C对Ge的抑制作用会趋向于饱和。     

Preparation and thermoelectric properties of β-Fe1−x Ru x Si2

-Fe_1–x Ru _x Si₂ solid solution was synthesized by solid state reaction at 1100 °C for 48 h and subsequent annealing at 850 °C for 168 h in an evacuated silica tube. Single phase solid solution was obtained in the composition range 0 x 0.1. The thermal stability range of the -phase is extended to higher temperature region by partial substitution of Ru atom. The thermoelectric properties of Cr or Co-doped -Fe_1–x Ru _x Si₂ strongly depend on the sintering conditions. The samples with optimum thermoelectric properties are obtained by high-pressure sintering at 3 GPa and 800 °C for 1 h. The optimum compositions are found to be Fe_0.92Ru_0.05Cr_0.03Si₂ and Fe_0.92Ru_0.05C_0.03Si₂ for p-type and n-type materials, respectively. The power factors (²) of these materials are higher than that of -FeSi₂ based materials.     

Oxidation Resistance and Magnetic Properties of SmCo7?x Si x Permanent Magnetic Alloys

The crystal structure, oxidation resistance, and magnetic properties of SmCo_7−x Si _x (x=0, 0.4, 0.6, and 0.9) permanent magnetic alloys were investigated systematically. It is found that the addition of silicon in the as-cast SmCo₇ ingot plays an important role in stabilizing TbCu₇ phase and improving inherent oxidation resistance. For the bulk nanocrystalline SmCo_7−x Si _x magnets, the oxidation resistance remarkably enhances but the corresponding Curie temperature T _c and maximum energy product (BH)_max exhibit a decreasing trend with the increase in Si content x. For the typical SmCo_6.4Si_0.6 nanocrystalline magnet, its final mass gain was about 1.71 mg/cm² after oxidation at 500 °C for 100 h, indicating the enhanced inherent oxidation resistance. Its T _c and (BH)_max were about 708 °C and 35.4 kJ/m³, respectively.     

Thermodynamic study of the magnetic ordering of Fe3−x Mn x Si alloys

The compounds Fe_3–x Mn _x Si exhibit a complex magnetic behavior for 0.6x1.75 involving ferromagnetic ordering followed by a reordering at lower temperature. Measurements of the thermal expansion and the specific heat C _p show only a weak anomaly at the Curie temperature, T _C, whereas a large, relatively sharp peak occurs at the magnetic reordering temperature, T _R. Thermal expansion measurements for the Fe_2.2Mn_0.8Si compound made about T _R are indicative of long-range ordering that can be suppressed in an applied field of 0.4T. Magnetization measurements show that low fields, 1–2 mT, strongly influence the bulk magnetization. Irreversible magnetization behavior, similar to that in spin-glass systems, is displayed.Paper presented at the Tenth International Thermal Expansion Symposium, June 6–7, 1989, Boulder, Colorado, U.S.A.     

Interface structure and electrical properties of PtSi/Si1−x Ge x diodes based on silicon

PtSi/strained Si_1–x Ge _x (x=0, 0.2, and 0.25) Schottky-barrier diodes (SBD) with extended cutoff wavelengths have been demonstrated by combining pulsed laser deposition (PLD) and molecular beam epitaxy (MBE). Pt was deposited by PLD on the Si_1–x Ge _x alloys with a thin Si sacrificial cap layer fabricated by MBE. By the reaction of deposited Pt film on Si, a sacrificial cap layer silicide SBD has been fabricated. Auger electron depth profiling was performed on the films before and after in vacuo annealing to study the redistribution of composition in the reactions. High-resolution transmission electron microscopy was used to investigate the interface structure. We have found that Pt reacts mainly with Si to form silicides at 350 °C, leaving some Ge to segregate at the surface. With annealing at 600 °C for 3 min the interface of PtSi/Si_1–x Ge _x is smooth. Since lowered-barrier-height silicide SBD are desirable for obtaining longer cutoff wavelength Si-based infrared detectors, the Schottky barrier heights of the PtSi/strained Si_1–x Ge _x SBDs with smooth interfaces were substantially lower than those of PtSi/Si SBDs, i.e., decreased with increasing Ge fraction, allowing for tuning of the SBDs cutoff wavelength. At 293 K, the ideality factor has been found to be 2.00 and 1.32 for PtSi/Si_0.80Ge_0.20 and PtSi/Si_0.75Ge_0.25 diodes, respectively. We have shown that high quantum efficiency and near-ideal dark current can be obtained in the film of PtSi/strained Si_1–x Ge _x with an excellent interface fabricated by MBE and PLD, after annealing at 600 °C for 3 min.     

The magnetic instability in the heavy fermion compounds Ce1−x La x Ru2Si2

The magnetization and the specific heat of Ce_1–x La _x Ru₂Si₂ with x0.13 are reported with special attention to the effect of magnetic field and the role of lanthanum doping. Evidence is given of differences between the undoped (x=0) and the solid solution (x0) cases. A common feature is the occurrence of well-defined anomalies in the magnetization at the metamagnetic fieldH _M independently of whether the ground state is one of long-range order or Pauli paramagnetism. Forx=0, the ground state appears to be a Pauli paramagnet for any strength of the magnetic field; quantum fluctuations or deviations from an ideal lattice may prevent the occurrence of a true static magnetic transition.Laboratoire associé à l'Université Joseph Fourier, Grenoble.     

Magnetic Properties of Ru-rich Ru2?x Fe x CrZ (Z=Si, Ge)

The properties of Heusler compounds Ru_2?x Fe _x CrGe are investigated and compared with those of Ru_1.9Fe_0.1CrSi. Ru₂CrGe is confirmed to exhibit an antiferromagnetic transition with Ne??l temperature 13?K by magnetic susceptibility and specific heat measurements. When Fe is substituted for Ru, a peak in the magnetic susceptibility is observed, and in the lower temperature region irreversibility between temperature dependences of magnetization for zero-field-cooling and field-cooling conditions is found. Nevertheless, in specific heat of Ru_1.9Fe_0.1CrGe, there is no anomaly to indicate phase transition. The specific heat is almost identical to that for Ru_1.9Fe_0.1CrSi. The above results demonstrate that the magnetic states in the low temperature region of Fe-substituted samples are spin-glass-like states. Slight substitution of Fe for Ru destroys the long-range-order and lead to peculiar spin-glass-like states.     

Gd Substitution Effects on the Magnetic Properties of the Pr1−x Gd x Co4Si Compounds

The crystal structure and magnetic properties of single phase Pr_1?x Gd _x Co₄Si compounds with x=0,0.2,0.4,0.6,0.8, and 1.0 have been investigated. X-ray analysis reveals that the compounds crystallize as a single phase having the hexagonal CaCu₅-type structure with the space group P6/mmm. The substitution of Gd for Pr causes a linear decrease of the unit-cell parameters a and c, and the unit-cell volume V. Magnetic measurements indicate that all samples are ordered magnetically below the Curie temperature. The saturation magnetization at 4.2 K decreases upon the Gd substitution up to x=0.6, and then increases.     

Stress characterization of device layers and the underlying Si1−x Ge x virtual substrate with high-resolution micro-Raman spectroscopy

Silicon–germanium (Si–Ge) epitaxially grown mismatched heterostructures are becoming increasingly important for high-frequency microelectronics applications. One option under serious consideration is that of using Si–Ge virtual substrates, i.e., compositionally graded layers designed to accommodate the lattice mismatch between the underlying Si substrate and the overlying active epilayers(s). This assists in the prevention of misfit dislocations that can impact adversely on the active device regions. The stress in both device silicon cap layers and the underlying Si_1–x Ge _x virtual substrates is characterized with high-resolution micro-Raman spectroscopy (RS). The device layers of the samples studied composed of a 7-nm thick silicon channel, a 6-nm thick SiGe layer and were capped with a 7-nm thick silicon layer. The device layers are grown over a 1-m thick constant composition Si_0.70Ge_0.30 virtual substrate capping layer, and the Si-Ge virtual substrate is grown on a p⁺-type (0 0 1) silicon wafer with a thickness of about 500 m. RS measurement results with a 488-nm Ar⁺ visible laser source indicate that the Si_0.70Ge_0.30 capping layer at the virtual substrate is fully unstrained, while the top silicon cap layer is in extremely high tension. The use of a 325-nm HeCd UV laser for the RS measurements, which probes only a very small depth into the Si cap layer (approximately 9 nm) confirms this high tensile stress is in the top silicon cap layer. The tensile stress in the top silicon cap layer is estimated to be as large as 2.4 GPa by analyzing the shift of the Si Raman peak with respect to the standard strain-free silicon sample. The measured stress value is almost equal to the theoretically predicted tensile stress that should exist in the fully strained Si cap layer. This implies that the Si cap layer remains strained in samples with this structure.     

Growth,chemical composition,and structure of thin La x Hf1 − x O y films on Si

The chemical structure, phase composition, and crystal structure of La _x Hf_{1 ? x} O _y films grown on Si using volatile metalorganic compounds as Hf and La precursors have been studied by X-ray diffraction, X-ray photoelectron spectroscopy, energy dispersive X-ray microanalysis, and atomic force microscopy. By varying the lanthanum and hafnium source temperatures, we were able to grow films with 2 at % < C_La < 30 at %. The Hf 4f and La 3d peak positions in the XPS spectra of the films correspond to hafnium and lanthanum in the Hf⁴⁺ and La³⁺ states. With increasing La concentration, the reflections in the X-ray diffraction patterns of the films shift to smaller 2θ angles, indicating the formation of solid solutions. At 18 at % La, we observed a transition from a fluorite-like structure to the pyrochlore structure (La₂Hf₂O₇). The film containing 30 at % La consisted of a mixture of c-La₂O₃ and La₂Hf₂O₇. The surface roughness of the films was shown to increase with increasing La concentration. Capacitance-voltage (C-V) measurements were used to assess the relative permittivity (k) of the films as a function of La concentration. The minimum k value was obtained at the La concentration corresponding to the transition from the fluorite structure to an ordered pyrochlore structure (second-order phase transition).     

Mössbauer spectroscopic studies of the crystallization of amorphous Fe80B20−x Si x (x=0, 2, and 8) alloys

The crystallization process of amorphous Fe₈₀B_20–x Si _x (x=0, 2, and 8) ferromagnetic alloys has been studied by using ⁵⁷Fe Mössbauer spectroscopy and X-ray diffraction studies. Results for samples heat treated at different temperatures for different times show that the crystallization of Fe₈₀B_20–x Si _x samples having x=0 and 2 leads to -Fe and t-Fe₃B, while for x=8, it leads to -Fe, t-Fe₂B, and perhaps Fe-Si. It is further observed that the addition of silicon to the Fe-B system improves the thermal stability of the system.     

Fabrication and mechanical properties of β-sialon–Fe x Si y –CNTs composites

Silicon nitride composites were fabricated by adding Fe₃Al and carbon nanotubes and hot-pressing at a low sintering temperature of 1600 °C. The resulted composites were characterized by X-ray diffraction, Fourier-transform infrared spectrum, and field emission scanning electron microscopy. It was found that the Fe₃Al could react with Si₃N₄ to form the series of compound of Fe _x Si _y , and CNTs could keep chemical stability in the system. Mechanical properties of the composites were also investigated. For Fe₃Al as the additive, the relative density could reach to 93.6 % with the maximum hardness of 15.7 GPa. When the Fe₃Al and CNTs were added into matrix simultaneously, the relative density reached to 92.6 %, and the maximum fracture toughness was 6.7 MPa m^1/2. Finally, the toughening mechanism of Fe₃Al and CNTs in sialon composites, containing crack deflection and bridging, and nanotubes pullout and bridging, were also discussed.     

Substitution Effect on Thermal Properties of (Lu1−x Sc x )5Ir4Si10 Near the Charge-Density-Wave Transitions

We present the results of specific heat, thermal conductivity and thermoelectric power on the substituted rare-earth-transition-metal pseudoternary compounds (Lu_1–x Sc _x )₅Ir₄Si₁₀ at temperatures between 10 and 300 K. The effects of Sc substitution for Lu in Lu₅Ir₄Si₁₀ are systematic studied near the charge-density-wave (CDW) transition. It is found that the CDW transition temperature T _P=80 K in Lu₅Ir₄Si₁₀ is decreased linearly by Sc substitution, with a depression rate dT _P/dx–17.8 (K/at. %). In addition, the CDW transition disappears upon 2% of Sc substitution for Lu. These observations indicate that the efects of both atomic disorder and internal pressure introduced by Sc substitution play important roles to the CDW transitions found in these alloys.     

Phase relation of LaFe 11·6 Si 1·4 compounds annealed at different high-temperature and the magnetic property of LaFe 11·6– x Co x Si 1·4 compounds

LaFe _11·6 Si _1·4 compounds are annealed at different high temperatures from 1323 to 1623?K. The powder X-ray diffraction patterns show that large amount of NaZn₁₃-type phase begins to be observed in LaFe _11·6 Si _1·4 compound after being annealed at 1423?K for 5?h. In the temperature range from 1423 to 1523?K, the $\boldsymbol{\alpha} $ -Fe and LaFeSi phases rapidly decrease to form 1:13 phase. LaFeSi phase is rarely observed in the XRD pattern in the LaFe _11·6 Si _1·4 compound annealed at 1523?K (5?h). With annealing temperature increasing to 1573?K and 1673?K, La ₅ Si ₃ phase is detected, and there is a certain amount of LaFeSi phase when the annealing temperature is 1673?K. The amount of impurity phases in the LaFe _11·6 Si _1·4 compound annealed by the two-stage annealing consisting of high temperature ( $\boldsymbol{>}$ 1523?K) and 1523?K is larger than that of the single stage annealing at 1523?K under the same time. According to the results of different high-temperature annealing, LaFe $_{{\bf 11{\cdot}6}-\boldsymbol{x}}$ Co $_{\boldsymbol{x}}$ Si _1·4 ( $\boldsymbol{0{\cdot}1} \boldsymbol{\le} \boldsymbol{x} \boldsymbol{\le} \boldsymbol{0{\cdot}8}$ ) compounds are annealed at 1523?K (5?h). The main phase is NaZn13-type phase, and the impurity phase is a small amount of $\boldsymbol{\alpha} $ -Fe in LaFe $_{{\bf 11{\cdot}6}-\boldsymbol{x}}$ Co $_{\boldsymbol{x}}$ Si _1·4 compounds. With increase in Co content from $\boldsymbol{x} \boldsymbol{=} \boldsymbol{0{\cdot}1}$ to $\boldsymbol{0{\cdot}8}$ , the Curie temperature $\boldsymbol{T}_{\!\boldsymbol{\rm C}}$ , goes up from 207 to 285?K. The introduction of Co element weakens the itinerant electron metamagnetic transition, and also results in the change of magnetic transition type from first to second order at about $\boldsymbol{x = 0{\cdot}5}$ . The magnetic entropy change decreases from 19·94 to 4·57?J /kg K with increasing Co concentration at a low magnetic field of 0?C2?T. But the magnetic hysteresis loss around $\boldsymbol{T}_{\!\boldsymbol{\rm C}}$ reduces remarkably from 26·2?J /kg for $\boldsymbol{x = 0{\cdot}1}$ to 0?J /kg for $\boldsymbol{x} \boldsymbol{=} \bf 0{\cdot}8$ .     

Spark plasma sintering of a p-type Si1?x Ge x alloy: identification of the densification mechanism by isothermal and anisothermal methods

Spark plasma sintering of a p-type Si_0.795Ge_0.200B_0.005 alloy has been investigated in vacuum, in the 400–1200 °C temperature range. The densification mechanism has been determined using isothermal and anisothermal methods. In spite of a slight material degradation for the highest sintering temperatures (occurrence of cristobalite nodules homogeneously dispersed in intergranular and intragranular positions), it is proposed that densification proceeds by grain boundary sliding accommodated most probably by silicon volume diffusion. The microstructure observation of several sintered samples using transmission electron microscopy supports the densification mechanism advanced. Because the elemental grains remain mostly equiaxe whatever the sintering conditions, a grain intercalation mechanism may be also implicated during densification.     

Electrical properties of Pd–Au/(In x –Sn1 – x ) Oxide/Si(p)/Al heterojunction diodes

Current–voltage (I–V ) and capacitance–voltage – characteristics of [Pd–Au/( – ) Oxide/Si(p)/Al] semiconductor oxide semiconductor (SOS) solar cells were measured in the temperature range between 300 and 500 K. The dark forward current–voltage curves were found to be independent of temperature. Consequently, the diode quality factor was temperature dependent. Analysis of the data indicated that the predominant carrier transport mechanism of the samples in the intermediate bias voltage region was thermionic field emission and recombination tunneling. From the experimental data it was found that, the open circuit voltage – , the short circuit current – and the fill factor 0.28–0.32, under illumination of 1124 lux.     

Al_xGa_（1－x）As外延层中Si平面掺杂的SIMS研究

利用二次离子质谱（ＳＩＭＳ）系统地研究了生长温度，Ａｌ组份ｘ值和Ａｓ＿４压强对Ｓｉδ掺杂Ａｌ＿ｘＧａ＿（１－ｘ）Ａｓ的ＳＩＭＳ深度剖面，Ｓｉ原子表面分凝和向衬底扩散的影响。实验发现，在外延生长Ｓｉδ掺杂Ａｌ＿ｘＧａ＿（１－ｘ）Ａｓ时，随着生长温度的提高或Ａｌ组份Ｘ值增加，Ｓｉ掺杂分布ＳＩＭＳ峰都非对称展宽，表面分凝作用加强，但不影响Ｓｉ原子的扩散，因此ＳＩＭＳ剖面的展宽与扩散无关。另外，我们还发现Ａｓ＿４压强高于１．５×１０￣（－５）ｍｂａｒ时，Ａｓ＿４压强对δ掺杂空间分布影响不大，而Ａｓ＿４压强低于此压强时，Ｓｉ掺杂分布峰宽度增加很快，这主要由杂质扩散作用引起。生长温度对掺杂分布峰影响最大，其次是Ａｌ组份影响，而较小Ａｓ＿４压强的影响不可忽视。这些研究结果对外延生长Ｓｉδ掺杂Ａｌ＿ｘＧａ＿（１－ｘ）Ａｓ材料是有价值的。