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1.
表面弹性能K24项对液晶盒指向矢分布的影响   总被引:2,自引:2,他引:0  
采用混合锚定非对称楔形液晶盒,导出了系统的吉布斯自由能.根据平衡态自由能最小的原理,利用变分的方法,得到了表面弹性能K24项存在时,指向矢分布满足的微分方程.通过求解方程,计算讨论了K24项对液晶指向矢分布的影响.结果表明K24项对楔形液晶盒指向矢分布的影响是不可忽视的.  相似文献   

2.
研究混合排列向列相-边缘场转换(HAN-FFS)液晶显示模式。通过假设液晶盒内电场为均匀共面场建立简化模型,并做k11=k22=k33=k的单一弹性常数近似。根据液晶的连续体理论,从而求得HAN-FFS模型指向矢分布,它与液晶盒厚、电极宽度、弹性系数以及介电常数有关,并根据液晶光学中琼斯矩阵法利用计算机模拟出指向矢变化情况及电光特性曲线。  相似文献   

3.
液晶盒内的液晶分子在不同的外加电场作用下重新排布,其极化指向发生改变,从而影响液晶盒整体的电学特性。本文考虑液晶材料的挠曲电效应,分析液晶盒的整体自由能表达式,包含弹性形变自由能密度、介电自由能密度和挠曲电自由能密度。基于液晶弹性理论和相场方法,构建描述液晶核指向矢分布及演化的相场方程,并运用离散方法推导出液晶盒约化电容的表达式。讨论边界强锚定的混合液晶盒(HAN)和平行液晶盒(PAN)表面电荷密度对液晶核指向矢偏转角的影响。进一步分析了挠曲电系数、表面电荷密度以及液晶盒厚度对两种不同初始指向分布液晶盒电容性能的影响。数值分析结果表明,表面电荷密度越大、挠曲电系数越小,液晶核指向矢偏角越大。在混合液晶盒中,约化电容随着表面电荷或液晶厚度的增加而增加,最终趋于饱和;而在平行液晶盒中,当表面电荷密度或液晶盒厚度达到某个临界值时,液晶核的指向矢才发生改变,液晶的约化电容才有明显的变化。随着表面电荷密度增加,液晶核指向矢发生偏转的临界厚度减小。  相似文献   

4.
基于格点模型空间各向异性两体势研究扭曲向列(TN)液晶盒的Fredericksz转变。该作用势不仅是空间各向异性的并且依赖于液晶的弹性常数。理论处理中假定具有理想向列序,这意味着分子长轴取向方向与液晶指向矢是重合的,而总自由能等于总相互作用能。分别对指向矢的倾角和方位角进行傅里叶展开,通过二阶导矩阵方法确定TN盒的阈值磁场。该磁场依赖于总扭曲角和液晶的弹性常数,并与连续体理论结果进行了比较。通过平衡态下系统自由能取最小,得到指向矢满足的平衡态方程。基于平衡态方程,对TN液晶盒中指向矢在磁场作用下的分布进行了数值计算。数值结果验证了液晶指向矢所满足的平衡态方程的正确性。进一步证实了文献中最近提出的两种从弹性能到两体作用势的映射方案之一(即模型Ⅰ)可以给出与连续体理论相一致的结果。  相似文献   

5.
基于格点模型空间各向异性两体势研究扭曲向列(TN)液晶盒的Fréedericksz转变.该作用势不仅是空间各向异性的并且依赖于液晶的弹性常数.理论处理中假定具有理想向列序,这意味着分子长轴取向方向与液晶指向矢是重合的,而总自由能等于总相互作用能.分别对指向矢的倾角和方位角进行傅里叶展开,通过二阶导矩阵方法确定TN盒的阈值磁场.该磁场依赖于总扭曲角和液晶的弹性常数,并与连续体理论结果进行了比较.通过平衡态下系统自由能取最小,得到指向矢满足的平衡态方程.基于平衡态方程,对TN液晶盒中指向矢在磁场作用下的分布进行了数值计算.数值结果验证了液晶指向矢所满足的平衡态方程的正确性.进一步证实了文献中最近提出的两种从弹性能到两体作用势的映射方案之一(即模型Ⅰ)可以给出与连续体理论相一致的结果.  相似文献   

6.
空间各向异性两体势与液晶定向排列   总被引:1,自引:3,他引:1  
基于分子场理论,研究一种新的空间各向异性两体作用势。对于该两体势,分子质心固定在简单立方晶格的格点上,而势参数依赖于液晶的弹性常数。通过函数迭代方法解分子取向分布函数满足的自洽方程。在大块液晶内部,存在3组单轴解,它们的指向矢分别沿x,y和z轴方向并且具有相同自由能。通过表面作用势描写摩擦后基板对液晶分子的作用,对20个分子层构成的5CB液晶薄层进行了数值计算。仍存在三种指向矢不同的状态,指向矢沿着摩擦方向的状态具有最低自由能。另外,讨论了表面作用在界面分子层中诱导的双轴序。  相似文献   

7.
用不对称液晶盒测定挠曲电系数   总被引:2,自引:4,他引:2  
用解析方法研究了电压作用下的沿面校列不对称向列液晶(NLC)盒。着重考虑了挠曲电效应的影响.导出了指向矢倾角θ满足的微分方程和边界条件,计算和讨论了阈值电压以及指向矢分布对盒中央平面对称性破缺参量△。提出了一种在给定阈值电压和盒厚时,可确定上、下基板锚定强度及挠曲电参量e(e=(e1 e3)/√k11△ε)的新实验方法。  相似文献   

8.
界面锚定能和扭曲向列液晶盒   总被引:1,自引:0,他引:1  
向列液晶界面锚定能被认为是液晶分子与固体界面上分子相互作用势之和,据此导出了锚定能的新公式,它包含两项,因而有两个强度参量,其中第二项是由于界面诱导双轴性而引起的,倾角锚定强度Aθ和方位角锚定强度定Aφ的差别可归因于此。用新的锚定能公式详细研究了弱锚定扭曲(超扭曲)向列液晶盒,假定Aθ/Aφ=k11/k12,计算了阈值场强和饱和场强的大小。与以前我们认为的Aθ/Aφ=1情况做了比较。结果表明,倾角锚定强度Aθ与方位角锚定强度Aφ的关系对扭曲(超扭曲)向列液晶盒的阈值场强和饱和场强都有影响。  相似文献   

9.
激光诱导液晶指向矢转动的物理过程由欧拉-拉格朗日方程描述,激光在液晶中的传输则由麦克斯韦方程描述,在几何光学近似条件下可以利用几何光学光线传输方程来描述。通过对这对耦合的微分方程组进行数值求解,研究了激光诱导液晶指向矢转动的物理机制,讨论了激光诱导液晶指向矢转动的阈值问题,比较了不同液晶盒几何参数与不同入射激光初始偏振状态对液晶指向矢转动的影响。此外,还研究了强激光在液晶中传输时指向矢转动对激光偏振态的影响。  相似文献   

10.
表面极化对阈值电压和饱和电压的影响   总被引:1,自引:0,他引:1  
考虑挠曲电极化,但不考虑界面上离子选择吸附产生的极化,文章详细讨论了表面极化P_s对平行向列液晶盒阈值电压和饱和电压的影响。文章由自由能的角度推导得到指向矢n倾角θ满足的微分方程和相应的边界条件;推导得到约化阈值电压u_(tn)和约化饱和电压u_(sat)的方程;讨论了约化表面极化强度P对约化阈值电压u_(th)和约化饱和电压u_(sat)的影响,并绘图表示,数值计算表明,表面极化对向列液晶盒的影响主要表现在界面锚定。  相似文献   

11.
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.  相似文献   

12.
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.  相似文献   

13.
The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.  相似文献   

14.
The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.  相似文献   

15.
Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.  相似文献   

16.
Waveguide multilayer optical card (WMOC) is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling & processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic (VB) language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.  相似文献   

17.
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's.  相似文献   

18.
The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.  相似文献   

19.
Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.  相似文献   

20.
An insert layer structure organic electroluminescent device(OLED) based on a new luminescent material (Zn(salen)) is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn(salen)/Liq/LiF/A1/CuPc/NPD/Zn(salen)/Liq/LiF/A1. Effective insert electrode layers comprising LiF(1nm)/Al(5 nm) are used as a single semitransparent mirror, and bilayer cathode LiF(1 nm)/A1(100 nm) is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.  相似文献   

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