Determination of spin-orbit splitting Δ_0 of valence band at Γ for gallium phosphide nanoparticles using fluorescence and infrared spectroscopes

The value of spin-orbit splitting Δ 0 of gallium phosphide (GaP) nanoparticles was determined. The information concerning the spin-orbit splitting of the valence band at Γ was acquired using fluorescence and infrared spectroscopes. Detailed investigation on the fluorescence characteristics under ultraviolet photoexcitation reveals that two doublets of emission transitions are related to the spin-orbit splitting of the valence band. The origin of two broad violet emissions, 3.00 and 3.10 eV, can be attributed to the direct transitions near the Γ point of the Brillouin zone between the Γ 1 conduction band and Γ 15 valance band, that is, Γ 6c -Γ 8v and Γ 6c -Γ 7v , respectively. The origin of two blue emissions, 2.74 and 2.64 eV, can be attributed to the indirect transitions between the X 1 conduction band and Γ 15 valance band, that is, Δ 5c -Γ 8v and Δ 5c -Γ 7v , respectively. Based on these transitions, the spin-orbit splitting Δ 0 of the GaP nanoparticles is determined as 0.10 eV. The infrared spectrum of the GaP nanoparticles shows a band at 817 cm -1 which is assigned to the transition between the Γ 7v and Γ 8v valence band maxima. It follows therefore that the spin-orbit splitting Δ 0 is 0.10 eV.     

Optical properties of nanosized ZnO films prepared by sol-gel process

Nanosized ZnO films were prepared by sol-gel process on quartz substrates. The effects of sol concentration and annealing temperature on the surface morphology, microstructure and optical properties of the films were investigated. The results show that the sols remain stable and usable for spin-coating within 7 d. The ZnO films have a homogeneous and dense surface with grain size about 30 nm. The ZnO thin film annealed at 500 ℃ for 1 h from the sol with Zn concentration of 0.8 mol/L shows an average transmittance of 94% in visible wavelength range. The optical band gaps in ZnO films by various annealing temperatures are from 3.265 eV to 3.293 eV. The violet emission located at 438 nm is probably due to the recombination transitions relating to the interface traps at the grain boundaries.     

THE BAND STRUCTURE AND WORK FUNCTION OF TRANSPARENT CONDUCTING ALUMINUM AND MANGANESE CO-DOPED ZINC OXIDE FILMS

Al and Mn co-doped-ZnO films have been prepared at room temperature by DC reactive magnetron sputtering technique. The optical absorption coefficient, apparent and fundamental band gap, and work function of the films have been investigated using optical spectroscopy, band structure analyses and ultraviolet photoelectron spectroscopy (UPS). ZnO films have direct allowed transition band structure, which has been confirmed by the character of the optical absorption coefficient. The apparent band gap has been found directly proportional to N^2/3, showing that the effect of Burstein-Moss shift on the band gap variations dominates over the many-body effect. With only standard cleaning protocols, the work function of ZnO: (Al, Mn) and ZnO: Al films have been measured to be 4.26 and 4.21eV, respectively. The incorporation of Mn element into the matrix of ZnO, as a relatively deepd onor, can remove some electrons from the conduction band and deplete the density of occupied states at the Fermi energy, which causes a loss in measured photoemission intensity and an increase in the su,rface work function. Based on the band gap and work function results, the energy band diagram of the ZnO: (Al, Mn) film near its surface is also given.     

Energy band alignment of HfO_2 on p-type(100)InP

The band alignment of HfO_2 film on p-type(100) InP substrate grown by magnetron sputtering was investigated.The chemical states and bonding characteristics of the system were characterized by X-ray photoelectron spectroscopy(XPS).The results show that there is no existence of Hf-P or Hf-In and there are interfacial In_2O_3and InPO_4 at the interface.Ultraviolet spectrophotometer(UVS) was employed to obtain the band gap value of HfO_2.In 3d and Hf 4f core-level spectra and valence spectra were employed to obtain the valence band offset of HfO_2/InP.Experimental results show that the(5.88 ± 0.05) eV band gap of HfO_2 is aligned to the band gap of InP with a conduction band offset(ΔE_c) of(2.74 ± 0.05) eV and a valence band offset(ΔE_v) of(1.80 ± 0.05) eV.Compared with HfO_2 on Si,HfO_2 on InP exhibits a much larger conduction band offset(1.35 eV larger),which is beneficial to suppress the tunneling leakage current.     

Synthesis of Flower-Like Nanoparticles of Anatase Titania by Microwave Solvo-Hydrothermal Method

Anatase titania nanoparticles with an average size of about 14 nm were synthesized by microwave solvothermal method from TiCI4 and ethanol as a precursor and solvent respectively. The shapes of as prepared samples were modified by microwave hydrothermal treatment in strongly alkaline medium at 100℃ for 2 h, the agglomerate particles can be converted to the nanorods then to flower-like sphere. The structure, morphology and optical properties of as-prepared powders were investigated by X-ray diffraction, scanning electron microscopy and UV- vis absorption spectroscopy, the quality of the samples was examined by IR absorption spectroscopy and room temperature photoluminescence （PL）. The results showed that the synthesized Ti02 revealed the formation of the nanorods and the flower-like shape of titania after post treatment in 5 mol/L and 10 mol/L NaOH solution, respectively. IR absorption spectra showed that the as-prepared TiO2 nanocrystals were highly pure and strongly surface hydrated, The photoluminescence measurement showed that five main emission peaks appeared in UV, violet, blue and green regions.     

Ellipsometric analysis and optical absorption characterization of nano-crystalline diamond film

A nano-crystalline diamond （NCD） film with a smooth surface was successfully deposited on silicon by a hot filament chemical vapor deposition （HFCVD） method. Scanning electron microscopy （SEM）, atomic force microscopy （AFM）, RAMAN scattering spectra, as well as spectroscopic ellipsometry were employed to characterize the as-grown film. By fitting the spectroscopic ellipsometric data in the energy range of 0.75-1.50 eV with a three-layer model, Sildiamond＋non-diamondldiamond＋ non-diamond＋voidlair, the optical constants are obtained. The refractive index of the NCD film varies little from 2.361 to 2.366 and the extinction coefficient is of the order of 10^-2. According to the optical transmittance and absorption coefficient in the wavelength range from 200 to 1 100 nm, the optical gap of the film is estimated to be 4.3 eV by a direct optical transition mechanics.     

Synthesis and characterization of silver nanoparticles by sonoelectrodeposition

Shaped silver nanoparticles with sphere, wire and dendrite were prepared by sonoelectrochemical deposition from an aqueous solution of AgNO3 in the presence of ethylenediaminetetraacetic acid disodium salt （EDTA） and polyvinylpyrrolidone （PVP）. The diameter of spherical silver particles was about 30 nm. The diameter of the silver nanowires was also about 30 nm and the length was 200-900 nm. The dendrites were synthesized with the concentration of silver solution increasing. Silver nanoparticles were characterized by transmission electron microscope （TEM）, X-ray powder diffraction （XRD）, scanning probe microscope （SPM） and UV-vis absorption spectrum. XRD patterns revealed that silver particles were of face-centered cubic structure. UV-vis absorption spectra indicated that different morphology and size of silver particles could influence the optical properties.     

STRUCTURAL DETERMINATION OF TITANIUM-OXIDE NANOPARTICLES BY X-RAY ABSORPTION SPECTROSCOPY

As a potential application of titanium-oxide nanoparticles, it is extremely important to investigate a detailed picture of the surface and interior structural properties of nanocrystalline materials, such as rutile and anatase with diameters 7.0 and 4.5nm, respectively. X-ray absorption spectroscopy has been used to identify the local Ti environment and related electronic structure. We combine the experimental results at the Ti edge in both bulk and nano-crystals to determine the lattice distortion in terms of differently characteristic preedge features and the variation in the multiple-scattering region of X-ray absorption near-edge structure (XANES) spectra. The relationship between the transition peaks and the surface-to volume ratio is also discussed.     

Effect of heat-treatment on the surface properties of gallium phosphide nanosolids by Raman spectroscopy

Raman spectra of gallium phosphide （GAP） nanosolids （unheated and heat-treated at 598 and 723 K, respectively） were investigated. It was observed that both the longitudinal optical mode （LO） and the transverse optical mode （TO） displayed an asymmetry on the low-wavenumber side. The scattering bands were fitted to a sum of four Lorentzians which were assigned to the LO mode, surface phonon mode, TO mode, and a combination of Ga-O-P symmetric bending and sum band formed from the X-point TA ＋ LA phonons, respectively. Analysis of the characteristic of surface phonon mode revealed that the surface phonon peak of the GaP nanosolids could be confirmed. In the infrared spectrum of the GaP nanoparticles, we observed the bands on account of symmetric stretching and bending of PO2, as well as stretching of Ga-O The Raman scattering intensity arising from the Ga-O-P linkages increased as increasing the heat-treatment temperature.     

Nano Sized Copper Selenide Thin Film Pre-Cursor by A Liquid Phase Chemical Growth Process

The deposition of copper selenide(CuSe)thin films was carried out using liquid phase chemical bath deposition process at the optimized growth parameters as:60℃deposition temperature,90 minutes deposition time,pH equal to 10.5±0.1 and 72±2 r/min speed of mechanical rotation.The as-grown deposits exhibited excellent uniformity and physical adherency with the substrate surface and are smooth and diffusely reflecting with colour changing from yellowish orange to dark chocolate during deposition.The layer is of the order of 300 nm thick.The EDS analysis technique gave film composition to be nearly stoichiometric(Cu=47.89%,Se=52.11%).An X-ray diffraction analysis showed CuSe to be polycrystalline hexagonal with a good match of d-values and intensities of reflections.The crystallite size is in the nanorange(50-60 nm).The as-deposited CuSe exhibited a high coefficient of absorption(α=105cm-1)with a direct optical band gap of 1.81 eV.Compared to other chalcogenides,CuSe films exhibit low resistance;room temperature electrical resistivity being 1.55×103?cm.The electrical conductivity decreased with increase in temperature up to 473 K;showing totally unusual behaviour from that of the semiconducting property.The thermo probe measurements showed n-type conduction of the samples.     

Optical and Raman scattering studies on SnS nanoparticles

Tin sulfide nanoparticles were synthesized through wet chemical route. Structure and phase purity were confirmed by powder XRD. Morphology and size were identified from TEM and AFM. The room temperature photoluminescence spectrum shows the band edge emission at 1.57 eV. The direct and indirect band gaps are estimated from UV-vis-NIR absorption spectrum as 1.78 and 1.2 eV, respectively. Blue shift of 0.48 eV observed for direct transition and 0.2 eV for indirect transition as compared to bulk band gap is due to quantum confinement effect. The Raman spectrum of SnS nanoparticles shows all the predicted Raman modes which show shift towards lower wave number side in comparison with those of the SnS single crystal. This is attributed to phonon confinement.     

Luminescence from band-gap photo-excitation of titanium anodic oxide films

Luminescence light from the anodic thin oxide films formed on titanium in neutral phosphate solution was measured by photo-excitation of ultra-violet light irradiation with 3.82 eV energy. The luminescence light is observed with a peak of about 3 eV energy that corresponds to the band-gap energy of the n-type semiconductive TiO₂ oxide. It can therefore be presumed that the luminescence is induced by de-excitation or recombination between electrons in the conduction band and holes in the valence band. The peak wavelength of the luminescence light changes with the formation potential of the oxide film from 409 nm at 1 V to 425 nm at 6 V. The shift of the peak may reflect an amorphous-crystalline transition with increase of potential.     

Density functional calculation of equilibrium geometry and electronic structure of pyrite

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GaN/PMMA nanocomposite：synthesis and optical properties

High crystalline quality wurtzite-GaN nanoparticles, with diameters of about 11 nm, well dispersed in a poly-methyl methacrylate polymer matrix, were synthesized using a routine two-step route and were structurally and optically characterized.The as-prepared composite showed three broad overloading photoluminescence emission peaks with centers at 3.45, 3.29, and 3.10 eV.The 3.45 eV emission band is assigned to the recombination of the free exciton of GaN particles.The other two emission peaks possibly origi...     

Synthesis and characterization of new light-emitting copolymers containing 3,4-dialkoxythiophenes

We report the synthesis, optical and electrochemical properties of a new series of polyoxadiazoles (P1–P3) consisting of 3,4-dialkoxythiophene and 1,4-divinylbenzene units. The polymers are prepared using the precursor polyhydrazide route. The polymers have well defined structure and exhibit good thermal stability with the onset decomposition temperature in nitrogen at around 330 °C. The optical and charge-transporting properties of the polymers are investigated by UV–vis spectroscopy, fluorescence emission spectroscopy and cyclic voltammetry. The UV–vis absorption spectra of polymers in solution showed a maximum at around 380 nm. The polymers depicted bluish-green fluorescence in solutions and green fluorescence in thin films. Cyclic voltammetry studies reveal that these copolymers have low-lying LUMO energy levels ranging from 3.25 to 3.31 eV and HOMO energy levels ranging from 5.48 to 5.56 eV, which indicated that the polymers are expected to provide enhanced charge-transporting (electron transport/hole blocking) properties for the development of efficient polymer light-emitting diodes (PLEDs).     

Gap states of charged combined solitons in a pernigraniline-base polymer

Considering the electron–electron interactions, we have investigated the electronic structures of charged combined solitons in a pernigraniline-base polymer on the basis of Baranowski–Büttner–Voit model. The numerical results show that there exist two bound states in the Peierls gap for both positive and negative combined solitons, one is deep level and the other is shallow level. The energy of the deep level (for S⁺ is about 1.03 eV and S⁻ 0.98 eV) agree with the photoinduced absorption data (∼1.0 eV) very well. The shallow one is newly discovered and it is about 0.22 eV under the bottom edge of the conduction band (positive soliton) or above the top edge of the valence band (negative soliton). Some other shallow states outside the energy bands are also predicted.     

Structure and optical characterization of GaP-SiO2 co-sputtered films

The films of GaP nanocrystals embedded in SiO2 matrix were prepared by radio frequency magnetron co-sputtering and subsequent anneal- ing technology. The structure and morphology of the films were investigated by scanning electron microscope, X-ray diffraction, and energy dispersive spectrum. Raman spectra results showed that the transverse optical phonon model (TO) and the longitudinal optical phonon model (LO) of GaP nanocrystals were both discovered to undergo red shift, broadening, and asymmetry. The red shift degree of the TO model was about 8.8 cm-1. The luminescence spectrum of the GaP/SiO2 film consisted of several emission peaks. 2.84-2.54 eV blue light emission was explained by the quantum confinement-luminescence centers model (QC-LCs).     

Preparation of MoO2 sub-micro scale sheets and their optical properties

MoO₂ sub-micro sheets have been synthesized in a large scale on silicon substrate with MoO₃ and C powders as raw materials using a novel chemical vapour deposition method. The lengths and widths of MoO₂ sheets are in the range of several to dozens micrometers, and the thickness of MoO₂ sub-micro sheets is ～200 nm. Transmission electron microscopy and high-resolution electron microscopy show that the MoO₂ sheets are of single crystal with a monoclinic structure. The sheets exhibit fluorescent emissions at 304.4, 343.5 and 350.6 nm when the 220 nm light excitation is applied at room temperature, and the emissions result from some defects and the electron transition between valence band and conduction band. UV–vis spectrum shows the MoO₂ sub-micro sheets have absorption peaks between 200and 300 nm and the emissions should be attributed to the defect states of MoO₂. Furthermore, the band-gap is estimated to be approximately 4.22 eV. The growth mechanism of the two-dimensional MoO₂ sub-micro scale sheets is also discussed.     

INVESTIGATION ON THE VALENCE STATE OF Ce ATOM IN BULK AND NANOCRYSTAL CeO2 BY X-RAY ABSORPTION AND PHOTOEMISSION

1. IntroductionRare earth oxides are potentially useful Inaterials for various optical and electronicapplications such as optical waveguides, optical filters, and capacitors. Nanocrystallinerare earth oxides, RE.Oy, where RE=Ce, Pr, Tb etc. x=1 or 2 and y=2 or 3, are playingan increasingly important role in solid state physics, chemistry, materials science, and evenbiologylll. The ability to synthesis nanocrystals of high quality and to understand themicrostructure properties in the nanocr…