Third-order nonlinear optical properties of sol-gel-derived V(2)O(5), Nb(2)O(5), and Ta(2)O(5) thin films

The third-order nonlinear optical properties of sol-gel-derived V(2)O(5), Nb(2)O(5), and Ta(2)O(5) thin films have been investigated by the third-harmonic-generation method, and the effect of the metal-oxygen bond length on the third-order nonlinear optical susceptibility χ((3)) has been examined. The χ((3)) values of V(2)O(5), Nb(2)O(5), and Ta(2)O(5) thin films were 1.1 × 10(-11), 1.3 × 10(-12), and 6.1 × 10(-13) esu, respectively, which corresponds to an increase in the average bond length I(b) of the order of V-O (I(b) = 0.183 nm), Nb-O (I(b) = 0.200 nm), and Ta-O (I(b) = 0.204 nm). The current and previous results indicate that χ((3)) of these transition metal oxides with the empty d orbitals is dominated mainly by the metal-oxygen bond length rather than the valence of the metal cation. It is predicted on the basis of Lines' model that transition metal oxides with the shortest I(b) exhibit the highest χ((3)), whereas nontransition metal oxides with the longest I(b) exhibit the highest χ((3)).     

Conduction processes in the Ta(-)/Ta2O5-electrolyte system

Thin tantalum oxide (Ta₂O₅) films of controlled thickness d (from 1 to 80 nm) were obtained by the anodization of tantalum in a phosphate buffer at pH 7. Experimental results for the d.c. conduction characteristics of amorphous highly imperfect Ta₂O₅ films are presented. Semiquantitative agreement is observed between the experiment and theory. For electrodes covered with very thin films, direct electron exchange between the metal and the electrolyte predominates. In the high field region, for films thicker than 30 nm, the conduction mechanism is space charge limited. The effective electron mobility is 10^-13 m² V^-1 s^-1 for ε = 13. In the low field region, the data can best be interpreted in terms of an ohmic mechanism with a resistivity of approximately 5 × 10¹⁴ Ω cm.The band gap for these films was determined from the spectral distribution of the photoconductivity and amounts to 4 eV. The flat-band potential is approximately - 1 V vs. the Ag/AgCl electrode.     

球形Ta2O5/Nb2O5制备方法的研究

研究了用氨沉淀氟钽(或铌)酸溶液制备球形Ta2O5/Na2O5工艺.通过实验探讨了沉淀条件、溶液浓度、沉淀时间、焙烧温度等工艺参数的最佳组合.结果表明,用氨沉淀氟钽(或铌)酸溶液制备球形的Ta2O5/Nb2O5,必须首先得到不规则的Ta(OH)5/Nb(OH)5.要得到不规则Ta(OH)5/Nb(OH)5,反应时搅拌强度要大,搅拌速率应控制在800～1 200 r/min,反应结束后继续搅拌10～20 min,终点pH值控制为8.5;氟钽(或铌)酸溶液浓度为60～80 g/L沉淀10 min,浓度为120～140 g/L沉淀15 min,之后可得到不规则Ta(OH)5/Nb(OH)5.再在800～850℃,焙烧6 h可得到球形Ta2O5/Nb2O5.     

Scintillation in anodic Ta2O5 films

The scintillation of anodic tantalum oxide was investigated by counting the number of breakdown events during anodization at a constant current density. A theory is developed which qualitatively explains the variation in the number of breakdown pulses with time and voltage for different current densities and different electrolyte resistivities. The theory also allows definition of a limiting anodization voltage which increases with the logarithm of the current density. Several experiments are presented which are in agreement with the theory.     

Formation of monodispersed Ta2O5 powders

The Ta₂O₅ powders synthesized by the hydrolysis of tantalum pentaethoxide, Ta(OC₂H₅)₅ in alcoholic solution were monodispersed fine oxide particles, which were a uniform, spherical shape, non-agglomerate, and had a narrow size distribution. They grew to 1.2m after ageing for 1 h after hydrolysis. Powder X-ray diffraction and differential thermal analysisthermogravimetric analysis showed the particles were amorphous and hydrated. These particles lost the water at 290° C and gave well-crystalline Ta₂O at 740° C. Throughout these thermal processes, the particle morphology was kept almost the same.     

Hollow waveguides with low intrinsic photoluminescence fabricated with Ta(2)O(5) and SiO(2) films

A type of integrated hollow core waveguide with low intrinsic photoluminescence fabricated with Ta(2)O(5) and SiO(2) films is demonstrated. Hollow core waveguides made with a combination of plasma-enhanced chemical vapor deposition SiO(2) and sputtered Ta(2)O(5) provide a nearly optimal structure for optofluidic biofluorescence measurements with low optical loss, high fabrication yield, and low background photoluminescence. Compared to earlier structures made using Si(3)N(4), the photoluminescence background of Ta(2)O(5) based hollow core waveguides is decreased by a factor of 10 and the signal-to-noise ratio for fluorescent nanobead detection is improved by a factor of 12.     

激光辐照制备高介电常数Ta2O5陶瓷

采用大功率CO2激光辐照制备高介电常数Ta2O5陶瓷,讨论了激光制备工艺参数如激光光束模式、功率密度、扫描速率、辐照时间、辐照方式等对制备材料介电性能和组织形貌的影响,分析了其作用机理.     

Inherent ductility in amorphous Ta2O5 films

Thin films (30 to 80 nm) of refractory tantalum metal were successfully sputter-deposited on uniformly deformable fluoropolymer and polyimide substrates in stress free form. These films were later anodized into amorphous Ta₂O₅ which is a non-porous (barriertype) oxide with excellent corrosion resistant properties. X-ray photo-emission spectroscopy studies were carried out on tantalum and Ta₂O₅ to determine the chemical composition and oxidation states of elements. Thin tantalum and Ta₂O₅ films on fluoropolymer substrates contained fluorine as an impurity while similar films on polyimide substrate contained no fluorine and, in general, fewer impurities. Both thin tantalum films and the corresponding anodic oxides, when deformed in tension to 10% strain, exhibited the expected ductile behaviour of metals where slip bands were observed in the electron microscope. In some cases, minor cracks were observed in the deformed anodic films due to suspected local detachment of the film from the substrate.     

Mechanical properties of Nb2O5 and Ta2O5 prepared by different procedures

We have studied the mechanical properties of niobium pentoxide and tantalum pentoxide ceramics prepared by a conventional ceramic processing technique and by exposure to high-intensity light (HIL). The results demonstrate that, after HIL exposure in an optical furnace, the niobium pentoxide and tantalum pentoxide ceramics possess enhanced microhardness and improved mechanical properties (strength, fracture toughness, and brittle microstrength) owing to the formation of fractal micro- and nanostructures. With increasing exposure intensity, the strength of the Nb₂O₅ and Ta₂O₅ ceramics increases.     

Electrical properties of Li2O-La2O3-SiO2 electrode glasses after Ta2O5 doping and Ta implantation

Electrical conductivities, , of the Li₂O-La₂O₃-SiO₂ glasses were investigated as functions of Ta₂O₅ doping and Ta ion-implantation. A linear relationship between logarithm and the inverse of the sample temperature, T, was found in 2 to 4 mol% Ta₂O5 doped Li₂O-La₂O₃-SiO₂ glasses. The conductivity increases as Ta₂O₅ content increases at sample temperatures above 100°C. Fluences of 50 keV Ta ions per cm² from 5 × 10¹⁶ to 2 × 10¹⁷ were implanted into 0% and 2% Ta₂O₅ containing Li₂O-La₂O₃-SiO₂ glass samples. The activation energy of the conductivity was deduced from the relation between log and 1/T. It was found in implanted samples that the conductivity increased, but the activation energy and T _k–100 decreased, where T _k–100 is the sample temperature when the conductivity reaches 100 × 10^–1 S/cm. However, the Ta₂O₅ containing implanted samples show higher conductivities, lower activation energies and lower T _k–100. X-ray photoelectron spectroscopy (XPS) was used to study the structural modification introduced by implantation. Bridging oxygen (BO) and non-bridging oxygen (NBO), were observed in all samples. The changes in relative concentrations of BO and NBO before and after implantation clearly indicate the structure modification which results in the increase of the conductivity. It was clearly demonstrated in this study that both doping Ta₂O₅ and implanting Ta ions enhance the conductivity of Li₂O-La₂O₃-SiO₂ electrode glasses.     

去除Ta2O5/Nb2O5中杂质S的工艺研究

从理论和实际应用方面,研究了去除Ta2O5/Nb2O5中杂质S的方法.通过对制取高纯Ta2O5和Nb2O5的中间产品高纯Ta(OH)5/Nb(OH)3进行过氧化处理,改变Ta,Nb,S等元素在物料中的存在方式,增大了含S杂质的溶解性,降低了物料对含S离子的吸附能力及硫酸盐的分解温度,通过洗涤、焙烧达到有效去除产品中杂质元素S的目的.该方法可在不影响Ta2O5/Nb2O5产品质量的情况下,使杂质S降低到0.0001%以下.     

Synthesis, Crystal Structure, and Ionic Conductivity of Tl2Ta2(PO4)2(HP5O16)

Tl₂Ta₂(PO₄)₂(HP₅O₁₆) is synthesized at 400°C in molten polyphosphoric acids containing Tl, Ta, and P in the ratio 4 : 1 : 15, and its crystal structure is determined: monoclinic cell, a = 5.1469 Å, b= 18.451 Å, c = 10.793 Å, = 95.65°, Z = 2, sp. gr. P2₁/m. The framework of the structure is made up of monophosphate and hydrogen pentaphosphate groups which share corners with TaO₆ octahedra. The Tl atoms reside in infinite channels. Neighboring pentaphosphate groups are hydrogen-bonded. In the range 60–350°C, the compound has a rather high ionic conductivity, which is tentatively attributed to proton transport. The activation energy of conduction is 48 ± 1 kJ/mol.     

掺钽对二氧化钛压敏电阻性能的影响

研究了钽对二氧化钛压敏电阻性能的影响。研究中发现掺入 0 .2 5mol %Ta2 O5的样品显示出最低的反转电压 (Eb= 6V/mm)、最高的非线性常数 (α =8.8)以及最高的相对介电常数 (εr=6 .2× 10 4 ) ,与样品电容和电阻的频谱特性相一致。样品的性能变化可用Ta5+ 对Ti4 + 的掺杂取代和该取代存在的饱和值来解释     

New low loss microwave dielectric ceramics in the BaO-TiO2-Nb2O5Ta2O5 system

Microwave ceramic dielectric resonator materials in the BaO-TiO₂-Nb₂O₅Ta₂O₅ system such as BaTiNb₄O₁₃, BaTiTa₂Nb₂O₁₃, BaTiTa₄O₁₃, Ba₃Ti₄Nb₄O₂₁, Ba₃Ti₄Ta₄O₂₁, Ba₃Ti₅Nb₆O₂₈, Ba₃Ti₅Ta₆O₂₈ and Ba₃Ti₅Nb₃Ta₃O₂₈ have been prepared by the conventional solid state ceramic route. They have relatively high dielectric constant and high quality factor. The resonator materials are characterized by X-ray diffraction and scanning electron microscopy (SEM) methods. The BaTiNb₄O₁₃Ba₃Ti₅Nb₆O₂₈ and Ba₃Ti₅Nb₃Ta₃O₂₈ have small temperature variation of the resonant frequency and are possible microwave dielectric resonator materials for practical applications.     

Fluorescence of Ta(2)O(5) thin films doped by kilo-electron-volt Er implantation: application to microcavities

Luminescent layers are prepared by the implantation of kilo-electron-volt Er ions into tantalum pentoxide (Ta(2)O(5)) thin films made by ion plating. The implantation fluences range from 3.3 × 10(14) to 2 × 10(15) ions/cm(2), and the energies range from 190 to 380 keV. Refractive index, extinction coefficient, and losses on guided propagation are investigated. We show that these Er-implanted layers present an absorption as low as that of the nonimplanted films. When optically pumped with an Ar(+) laser (λ = 0.488 μm) beam, implanted films show peaked fluorescence spectra centered near 1.53 and 0.532 μm. We show that the fluorescence intensity is correlated with the intensity of the pump beam in the region where Er ions are implanted. Radiation patterns of Er ions located inside a single layer or inside a Ta(2)O(5)/SiO(2) dielectric stack made by ion plating are also investigated. We show that, in any case, spontaneous emission of Er ions can be spatially controlled.     

Ti6Al4V钛合金表面Ta2O5/Ta2O5-Ti/Ti多涂层的制备与性能研究

采用磁控溅射技术在Ti6Al4V钛合金表面制备了Ta_2O_5/Ta_2O_5-Ti/Ti多层涂层;利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和X射线光电子能谱仪 (XPS),分析了涂层的微观结构、物性组成和化学价态;通过划痕仪、纳米压痕仪、摩擦磨损试验机和电化学工作站,检测了涂层的结合强度、力学性能、摩擦系数和耐腐蚀性。研究结果表明,Ta_2O_5/Ta_2O_5-Ti/Ti多层涂层表面由峰型颗粒组成,粒径大小均匀,涂层结构致密。与Ti6Al4V相比,Ta_2O_5/Ta_2O_5-Ti/Ti多层涂层试样具有较小的摩擦系数,较高的腐蚀电位和较小的腐蚀电流密度,表现出良好的耐磨和耐腐蚀性能,能对Ti6Al4V合金植入材料起到较好的保护作用。