基于C8051F060的微型生化分析仪高速数据采集系统

介绍了一种基于C8051F060单片机的微型生化分析仪高速数据采集系统.系统在CPLD产生的时序逻辑驱动下,以C8051F060单片机为控制核心,利用单片机片内集成的16位分辨率的A/D对CCD视频信号进行精确数据采集.为了加快数据存储速度,采用了DMA存储技术,使采样频率提高到300 kHz,满足了微型生化分析仪对高速采样的需求.实践检验表明,系统具有测试速度快、精度高、运行稳定、抗干扰能力强和成本低等特点.     

多参数微型快速生化检测仪光谱扫描自动定位控制系统研究

样品检测光谱扫描自动定位控制是多参数快速生化检测仪的关键技术之一。针对重庆大学研制的基于微型光谱仪的多参数微型快速生化检测仪,提出并完成了多参数样品检测光谱扫描自动定位控制系统的设计,并基于该控制系统展开了多参数微型快速生化检测仪的联机调试实验研究。实验结果表明：样品检测吸光度的变异系数CV≤1%,吸光度的线性相关系数R2≥0.995,满足半自动生化检测仪的相关技术要求。     

微型生化分析系统

介绍了一种基于微型光纤光谱仪的微型生化分析系统,对其进行了标定和实验测试。实验中对Fe^2 -邻二氮菲溶液体系的吸收谱进行了测试,做出了相应的工作曲线。并将测试结果与国内的722型分光光度计的实测结果进行了比较,实验结果表明该微型生化分析系统已达到实用化的要求,且具有实时全光谱(350～800nm)分析、体积很小等优点,是一种理想的微型生化分析系统。     

基于STM32的全自动生化分析仪设计

针对目前国内全自动生化分析仪精确度、自动化程度要求较高的现状,设计了以ST公司的STM32为核心控制器的新型全自动生化分析仪。设计包括自动进样模块、光电检测模块、温度控制模块。自动进样模块以STM32为核心设计了步进电机的驱动电路,对电机的时序和速度进行控制。光电检测模块光源部分采用了CAT4101控制芯片有效地对光衰进行补偿,LOG112精确实现对微弱光电信号的非线性放大。温度控制模块以TI公司的DRV8834为核心,负责对半导体制冷片温度的精确控制,确保检测过程的温度恒定。结果表明:该仪器设计成本低廉,具有快速、准确、智能化程度高以及操作性强的特点,整体性能优于国内其他同类产品。     

一种新的微型PTC元件的制造工艺

介绍了一种新的微型ＰＴＣ元件的制造工艺，并对各个工序的技术重点做了详细阐述。作者采用等静压成型和切片、划片新工艺制成２ｍｍ×２ｍｍ×０．３ｍｍ微型ＰＴＣ元件，其居里温度为１２０℃，室温电阻率为１００Ω·ｃｍ，升阻比ρｍａｘ／ρｍｉｎ大于１０３，电阻温度系数α≥１５％℃－１，时间常数小于２ｓ。     

快速救护微型生化检测仪的光学系统设计

针对快速救护微型生化检测仪对其光学系统的微小型要求,设计了一种基于微型光谱仪的快速救护微型生化检测仪光学系统,实现了光学系统的微小型化。实验测试结果表明,该光学系统满足了快速救护微型生化检测仪光学系统的设计与应用要求。     

混合集成微型永磁马达驱动电路的热设计及其分析

本文介绍了混合集成微型永磁马达电路的热设计方法,并采用45度热扩散法对热设计进行了理论计算和分析,采用热分析软件绘制出其温度分布情况的热相图,最后,用点温度计实际测出主热源的温度,以验证热设计的实际效果。     

全自动生化分析仪的设计

介绍了一种分立式全自动生化分析仪的设计及研制概况，对各重要部件作了进一步阐述，为今后人们研究全自动生化分析仪提供了有价值的经验。     

生长温度对Mn掺杂ZnO纳米棒铁磁性的影响

用化学气相沉积法(CVD),在生长温度为600、650和700 ℃条件下,未采用任何催化剂制备了Mn掺杂ZnO纳米棒.研究发现,随着生长温度的升高,样品中O空位的浓度逐渐增加.低浓度的O空位可以增强Mn掺杂ZnO纳米棒的铁磁性,但O空位浓度过高时,Mn掺杂ZnO纳米棒表现出超顺磁性或反铁磁性.在3个样品中,650 ℃的样品具有最好的室温铁磁性,其饱和磁化强度为0.85 μB/Mn,矫顽力为50 Oe.     

小波分析在微型光谱仪信号去噪处理中的应用

针对微型光谱仪光谱信号存在的噪声问题,利用小波变换在时频域具有多分辨率,能同时进行时频域局部分析的特性,运用Mallat分解和重构算法,通过C语言编程实现对光谱信号的噪声抑制.将程序应用到MS-Ⅱ明思微型生化分析仪系统中,对算法的有效性进行了验证.结果表明,用小波变换对光谱信号进行分析和处理,提高了光谱信号分析的精度,从而提高了系统测试的准确性和稳定性.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.