A new gate driver integrated circuit for IGBT devices with advanced protections

The aim of this paper is to discuss new solutions in the design of insulated gate bipolar transistor (IGBT) gate drivers with advanced protections such as two-level turn-on to reduce peak current when turning on the device, two-level turn-off to limit over-voltage when the device is turned off, and an active Miller clamp function that acts against cross conduction phenomena. Afterwards, we describe a new circuit which includes a two-level turn-off driver and an active Miller clamp function. Tests and results for these advanced functions are discussed, with particular emphasis on the influence of an intermediate level in a two-level turn-off driver on overshoot across the IGBT.     

A resonant MOSFET gate driver with efficient energy recovery

High frequency pulse-width modulation (PWM) converters generally suffer from excessive gate drive loss. This paper presents a resonant gate drive circuit that features efficient energy recovery at both charging and discharging transitions. Following a brief introduction of metal oxide semiconductor field effect transistor (MOSFET) gate drive loss, this paper discusses the gate drive requirements for high frequency PWM applications and common shortcomings of existing resonant gate drive techniques. To overcome the apparent disparity, a new resonant MOSFET gate drive circuit is then presented. The new circuit produces low gate drive loss, fast switching speed, clamped gate voltages, immunity to false trigger and has no limitation on the duty cycle. Experimental results further verify its functionality.     

Embedding a feedforward controller into the IGBT gate driver for turn-on transient improvement

This paper proposes an active gate drive method based on a feedforward control for turn-on condition in IGBTs. The transient improvement with minimum undesirable effect on the efficiency is the main objective of this research. The new gate driver (GD) improves the trade-off between switching loss and device stress at the turn-on condition, without getting feedback from the output. The operation principle and implementation of the controller in the GD are presented. The effect of the proposed GD on the transient behaviour, efficiency, junction temperature and electromagnetic interference (EMI) during turn-on switching is evaluated by both simulation and experimental tests. The new GD is evaluated under hard switching condition and various frequencies. Advantages and disadvantages of the method have been discussed.     

Poly-Si TFTs integrated gate driver circuit with charge-sharing structure

A p-type low-temperature poly-Si thin film transistors (LTPS TFTs) integrated gate driver using 2 non-overlapped clocks is proposed. This gate driver features charge-sharing structure to turn off buffer TFT and suppresses voltage feed-through effects. It is analyzed that the conventional gate driver suffers from waveform distortions due to voltage uncertainty of internal nodes for the initial period. The proposed charge-sharing structure also helps to suppress the unexpected pulses during the initialization phases. The proposed gate driver shows a simple circuit, as only 6 TFTs and 1 capacitor are used for single-stage, and the buffer TFT is used for both pulling-down and pulling-up of output electrode. Feasibility of the proposed gate driver is proven through detailed analyses. Investigations show that voltage bootrapping can be maintained once the bootrapping capacitance is larger than 0.8 pF, and pulse of gate driver outputs can be reduced to 5 μs. The proposed gate driver can still function properly with positive V_TH shift within 0.4 V and negative V_TH shift within-1.2 V and it is robust and promising for high-resolution display.     

一种新型a-IGZO TFT集成栅极驱动电路设计

在传统集成栅驱动电路中采用非晶InGaZnO薄膜晶体管(a-IGZO TFT)后会造成信赖性的降低,经过分析确定原因为驱动TFT阈值电压漂移。本文提出了一种改进的集成栅驱动电路,通过对驱动TFT栅节点电压的稳定控制,获得了较大的驱动TFT阈值电压漂移冗余度(从原来的不到±-3V扩大到±-9V),克服了a-IGZO TFT阈值电压漂移所造成的电路失效,稳定了集成栅驱动电路并延长了液晶显示器面板的寿命。     

MOSFET和IGBT性能的比较

介绍MOSFET和IGBT的基本原理和特性,并对它们的性能进行了比较。     

混合信号微控制器提升车用嵌入式系统

通过网络连接不同系统以分享信息、进行监控及增加安全性,汽车相关应用正日益精进.随着复杂度的提高,车用系统需采用更有效的电子元器件来节省空间,这也意味着印刷电路板(PCB)上的元器件势必越来越少,半导体厂商必须提供整合性与性能都更强的产品,尤其是各种微控制器(MCU).     

IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process

This paper discusses the benefits of a full-bridge output stage on integrated IGBT gate drive circuits. This full-bridge topology allows obtaining positive and negative gate voltages using a single floating power supply. Short circuit protections have also been integrated, implementing an original soft shutdown process after an IGBT short circuit fault. The monolithic integration is based on an innovative high-voltage CMOS technology for power integrated circuits, using a standard low cost CMOS technology, requiring only one extra processing step. Lateral power N- and P-MOS transistors have been optimized using 2D simulators attending both specific on-resistance and breakdown voltage in order to optimize the full-bridge output stage. The IGBT driver has been experimentally tested, producing ±15 V gate-to-emitter voltage, and supplying the current peaks required by the 600 V IGBT switching processes. The driver characteristic response times are adapted to work at high switching frequency (>25 kHz) with high value of capacitive loads (3.7 nF).     

Noise associated with distributed resistance of MOSFET gate structures in integrated circuits

The effect of thermal voltage fluctuations in a resistive gate matrix perpendicular to the direction of channel current, in a MOSFET, are treated in detail. A general formula is derived to arrive at channel current fluctuations for an arbitrary gate matrix layout. This formulation is an extension of the analysis done by Thornber and is valid for frequencies at which the distributed RC time constants associated with the gate matrix are not important. The results of this analysis can be used to design low-noise resistive gate structures.     

新型PT IGBT型开关管与MOSFET型开关管的性能比较

引言 　　具有MOS电路易于驱动、低导通损耗等特点的IGBT管目前主要应用于高电压、强电流电力电子领域.新型PTIGBT管将开关损耗与导通损耗协调得更加合理,凭其技术优势已经能够占领目前由MOSFET管统治的高频高效电子器件领域.在工作电压高于300V的各类工业场合,使用IGBT管替代MOSFET管作为开关电源驱动器件已经成为一种趋势.……     

Techniques for minimizing MOSFET gate leakage current

Measurements made on the gate current of one side of a dual MOSFET show that special packaging and circuit techniques result in a substantial reduction in gate leakage by almost entirely eliminating header leakages. Gate currents as low as 20×10^-18A have been measured during the investigation. Details of the measuring techniques are also given.     

一种专为IGBT和MOSFET设计的新型集成驱动器

介绍了一种专为IGBT和功率MOSFET设计的电力电子驱动器件———SCALE集成驱动器的性能特点和内部结构 ,给出了SCALE集成驱动器在中频臭氧发生器电源中的应用电路     

MOSFET门极驱动电压的优化

电源设计人员通过正确匹配MOSFET在驱动时的门极驱动电压,有时能够获得额外的效率提高。采用较高的电压驱动MOSFET门极将导致较低的关联导通电阻Rds(ON),直到低至某一特定值。在众多高电流隔离式电源应用中我们可以发现,这对低电压高电流VRM设计以及控制驱动的同步整流器而言是十分有益的。在同步降压电源应用中,降低     

Short-circuit protection for an IGBT with detecting the gate voltage and gate charge

This paper proposes a new short-circuit protection method for an IGBT. The proposed method is characterized by detecting not only gate charge but also gate voltage of the IGBT. This results in a shorter protection time, compared to the previous method that detects only the gate charge. A real-time monitoring system using an FPGA, A/D converters, and a D/A converter is used for the proposed protection method. Experimental results verify that the proposed method achieves a protection time of 390 ns, which is reduced by 68% compared to the previous method.     

An analytical expression for MOSFET gate leakage current

Integral expressions for the gate leakage current in a MOSFET are derived on the basis of Schottky emission across the gate insulator and on the internal self-heating due to device power dissipation. Computer evaluation of these integrals yields gate leakage current curves that exhibit the same characteristics observed experimentally.     

Balanced compensation for highly linear MOSFET gate capacitorbranch

The compatibility of the switched-capacitor technique with standard digital CMOS processes utilising MOSFET gate capacitance has recently been investigated. Owing to its high voltage-dependence, a technique for enhancing linearity which is suitable for non-delay-free circuits is proposed. The technique was verified by simulation to demonstrate its effectiveness for linearity improvement     

用作超快速离子偏转板驱动器的MOSFET

图1所示的电路可在实验仪器中的一组大容量离子偏转板上提供20MHz方波。为了获得所需的偏转量,偏转板电压必须达到20～30V,远大于普通逻辑电路系列或驱动器系列所能提供的电压。为了减小人为寄生信号,上升时间和下降时间必须极短,过冲和波动最小。驱动偏转板的是两个相位相差180°的相同电路。这一驱动器使用Directed Energy公     

IGBT发展概述

本文概述了IGBT自发明以来主要的结构改进和相应的性能改进。包括芯片集电结附近（下层）结构改进（透明集电区）、耐压层附近（中层）结构改进（NPT、FS／SPT等）和近表面层（上层）结构改进（沟槽栅结构、注入增强结构等），以及由它们组合成的NPT—IGBT、TrenchIGBT、FS—IGBT、Trench FS-IGBT、SPT、SPT＋、IEGT、HiGT、CSTBT等。     

GH-039带有过电流保护功能的高速大容量IGBT厚膜驱动器集成电路

介绍了带有过电流保护功能的高速大容量IGBT厚膜驱动器GH－039,分析了它的引脚排列和各引脚的名称,功能和用法,给出了它们的主要设计特点和参数限制,剖析了其的内部结构和工作原理,进而探讨了其应用技术。它单电源工作,内置高速光电耦合器实现输入、输出隔离;它高密度集成,具有对被驱动IGBT进行过电流或短路保护的功能,可用来直接驱动300A、600V的功率IGBT模块。     

Modeling of gate underlap junctionless double gate MOSFET as bio-sensor

In this work, the sensitivity of two types gate underlap Junctionless Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor (JL DG MOSFET) has been compared when the analytes bind in the underlap region. Gate underlap region considered at source end and drain end once at a time in the channel of JL DG MOSFET. Separate models have been derived for both types of gate underlap JL DG MOSFETs and verified through device simulation TCAD tool sprocess and sdevice. To detect the bio-molecules, Dielectric Modulation technique has been used. The shift in the threshold voltage has been pondered as the sensing parameter to detect the presence of biomolecules when they are bound in gate underlap channel region of the devices.