基于群体智能边缘提取算法的联合变换相关器

为提取联合变换相关器输入面图像的边缘,改善相关器的识别效果,提出了一种基于群体智能的图像特征提取方法,并将其应用于联合变换相关器的输入面图像预处理中.实验结果表明该算法有效提取了图像的边缘,锐化了相关峰,提高了联合变换相关器的目标识别能力.群体智能计算机并行算法与联合变换相关器光学并行系统相结合,为实现实时高效的光电混合目标识别系统奠定了坚实的理论基础.     

小波变换在实时联合变换相关器中应用的研究

通过目标图像的小波变换获得图像的多分辨率小波梯度信息,再利用线性或非线性的变换来处理图像的小波梯度信息,这样便得到了一幅梯度信息增强后的小波系数,利用图像复原技术便能得到对比度增强后的目标图像,从而使实时联合变换相关器能较好地识别复杂背景低对比度的目标图像.     

低对比度目标探测技术

为了提高联合变换相关器对复杂背景下的低对比度目标的识别能力,提出了小波变换与灰度拉伸以及Canny算法相结合的物面滤波新方法,并设计了新物面处理滤波器.通过计算机模拟和光学实验证明,该方法可以准确地提取目标特征,有效地降低噪声并最终获得明亮的相关峰,成功解决了低对比度复杂背景目标的识别问题.     

光学相关复杂背景低对比度目标的识别研究

复杂背景的低对比度目标识别一直是目标探测跟踪的关键技术之一。针对光电混合联合变换相关器,以多小波变换为基础,应用GHM多小波对目标联合图像处理,并采用多尺度非线性方法,通过非线性函数有效地改变各尺度上的细节分量,从而改变图像对比度,达到增强目标图像的目的。对复杂背景的低对比度目标图像进行了大量计算机模拟实验和光学相关实验,结果表明,这种基于多小波图像增强算法,对复杂背景的低对比度目标能够获得明亮的相关点,提高低对比度目标的识别率。作为实例,文中给出航行中低对比度船的图像识别。     

基于小波多尺度综合的低对比度目标识别

光电混合联合变换相关器能够对目标进行自动探测识别和跟踪。为使联合变换相关器对低对比度目标进行有效探测与识别,提出了一种基于小波多尺度综合的边缘提取新方法,对输入图像进行预处理。计算机模拟实验和光学实验证明,该方法使相关器在输入图像对比度低、信噪比较低时仍然能够产生较强的相关峰输出,扩展了光电混合联合变换相关器的应用范围。     

光学相关多目标识别技术

光电混合实时联合变换相关器能够实现目标的自动识别和定位（方位角和俯仰角）,在复杂背景中,多目标动态测量一直是待解决的关键技术之一,由于背景复杂、目标多、噪声大,因而目标识别效果不佳。针对这一问题,提出了在光电混合联合变换相关器中应用高斯滤波和拉普拉斯算子相结合的新方法,并把其应用在目标图像的频谱面。即基于高斯滤波先对目标图像的频谱进行平滑、积分以滤掉噪声,再利用拉普拉斯算子进行边缘检测,使目标图像轮廓清晰,降低了噪声的影响,消除了双边缘现象,最大限度地保留了频谱图像的细节信息。该方法解决了多目标的识别问题,提高了光电联合变换相关器的目标识别率。给出了飞机多目标识别的实验结果。     

基于最小平均相关能量滤波器的畸变目标识别

通过对多种畸变目标识别算法的研究, 对用于匹配滤波器的最小平均相关能量(MACE)滤波器进行了改进。利用MACE滤波器算法的基本思想构造滤波器函数, 在合成参考图像前对训练图像进行边缘提取, 并对联合图像的功率谱进行了拉普拉斯锐化, 成功实现了在联合变换相关器中对旋转目标图像的探测和识别, 提高了畸变图像相关峰的亮度, 拓展了联合变换相关器的探测和识别的范围。作为实例, 对旋转战机目标图像进行了计算机模拟实验和光学实验, 验证了该算法的可行性。     

应用相移技术的形态学联合变换相关器

用数学形态学的方法对相关器的输入图像进行预处理,有效的去除图像噪声和提取边缘;采用相移技术在光学频谱面去除零衍射级,并对其进行二值化。计算机仿真结果表明,本文提出的联合变换相关技术增强了相关器的抗噪声性能,锐化了相关峰强度,提高了衍射效率和对目标的识别能力。     

基于最小平均相关能量滤波器的畸变目标识别

通过对多种畸变目标识别算法的研究,对用于匹配滤波器的最小平均相关能量(MACE)滤波器进行了改进。利用MACE滤波器算法的基本思想构造滤波器函数,在合成参考图像前对训练图像进行边缘提取,并对联合图像的功率谱进行了拉普拉斯锐化,成功实现了在联合变换相关器中对旋转目标图像的探测和识别,提高了畸变图像相关峰的亮度,拓展了联合变换相关器的探测和识别的范围。作为实例,对旋转战机目标图像进行了计算机模拟实验和光学实验,验证了该算法的可行性。     

基于最小平均相关能量滤波器的目标识别技术

把用于匹配滤波器的最小平均相关能量(MACE)算法进行改进,成功应用于实时联合变换相关器。训练系列图像的谱按MACE综合后,经傅里叶逆变换在物面合成参考图像,同时在合成参考图像前对训练图像进行边缘提取,并对目标与参考图像的联合功率谱进行拉普拉斯锐化,提高相关峰对比度。给出了存在旋转变化的目标图像和光学实验。实验表明,改进后的MACE方法可大大减少训练图像的数目,减小运算量,很好地解决联合变换相关器对目标存在旋转变化的识别问题,可扩大目标识别的范围,提高识别率。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.