ITO退火工艺对HADS型TFT-LCD透过率的影响

HADS型TFT基板制程中通常存在两次ITO退火工艺,而Cell制程中则存在相似的配向膜高温烘焙工艺。为提升TFT产线退火工序的产能,因此考虑对ITO退火进行时间上的缩减甚至直接省略,然后利用配向膜烘焙的热处理对前层ITO的结晶进行补偿,但ITO结晶方式的变化还需确保产品高透过率特性。对比实验的结果表明:单层ITO退火时间由30min缩减至10min时,产品的透过率基本保持不变;2nd ITO退火直接省略时产品仍具备高的透过率特性,但1st ITO退火省略时产品的透过率则会大幅降低,其主要原因是钝化绝缘层的阻隔导致了1st ITO中的亚氧化物无法被后工段的热处理所氧化,而配向膜涂覆后的2nd ITO在烘焙过程中仍可以与外界高温空气结合反应。在确保产品高透过率的前提下,选择从源头上减少了1st ITO内亚氧化物的产生,通过增加1st ITO成膜时的氧气流量也可以实现1st ITO退火的直接省略。最终两次ITO退火均可被配向膜烘焙所替代且产品兼具高透过率特性,最大化地提升了TFT产线的生产效率。     

彩色膜上ITO的室温沉积及其在FPD中的应用

使用直流磁控溅射技术,在彩色膜衬底上室温制备出粘附性良好的氧化铟锡(ITO)透明导电薄膜。X光衍射(XRD)和原子力显微(AFM)分析表明,室温ITO为多晶态,薄膜具有很好的透过率和良好的导电特性,方块电阻为120Ω／□,对应ITO／彩色膜复合膜在450nm的蓝(B)光、530nm的绿(G)光、630nm的红(R)光处的峰值透过率均达到85％左右。彩色膜与ITO电极的形成及联接等加工工艺有良好的相容性。对该技术在彩色液晶显示(LCD)和彩色有机发光显示(OLED)中的应用,进行了探索。     

生长速率对反应蒸发制备ITO薄膜光电性能的影响

用电阻加热反应蒸发的方法制备氧化铟锡(ITO)薄膜,测试了膜的电阻率、可见光透过率、载流子浓度和迁移率,讨论生长速率对薄膜光电性能的影响.并在衬底温度为160 ℃、反应压强为1.4×10-1 Pa的条件下,制得可见光范围平均透过率为93%、电阻率为4.7×10-4 Ω·cm的ITO透明导电薄膜.     

TFT-LCD重力Mura的影响因素

重力Mura不良一直是显示业内一种比较难以解决的顽疾。随着显示屏透过率及对比度的要求不断提高,产品设计安全范围变得更小,因此重力Mura不良的解决更是尤为关键。本文对显示屏内部特性因素进行了分析,并通过工艺变更样品制作,进行液晶量安全范围(LC Margin)实验测试。证明了引起LC Margin变化的主要因素为柱状隔垫物(PS)高度,同时阵列基板上的源极信号体(S/D)膜层厚度和栅极(Gate)膜层厚度同样对LC Margin产生一定影响;CF基板上BMOCBlue膜层厚度、玻璃厚度特性参数也会导致LC Margin发生变化;在成盒(Cell)制作工艺中,PI膜层厚度及液晶型号对LC Margin的产生影响虽然不大,但也不容忽视;通过这样的实验论证,为业内研究提供相关依据,也为企业提供验证经验,保证产品的品质。     

快速热退火对ITO薄膜及LED芯片性能的影响

采用金属有机化学气相沉积(MOCVD)技术在蓝宝石衬底上制备了GaN基LED外延层,采用磁控溅射法制备了氧化铟锡(ITO)薄膜,ITO薄膜用于制作与p-GaN的欧姆接触.研究了快速热退火温度为550℃,退火时间为200 s时,不同氧气体积流量对ITO薄膜性能及LED芯片光电性能的影响.结果表明:不通氧气时,ITO薄膜的方块电阻和透过率分别为33 Ω/口和93.1％,LED芯片出现电流拥挤效应,其电光转换效率只有33.3％;氧气体积流量为1 cm3/min时,ITO薄膜的方块电阻和透过率分别为70 Ω/口和95.9％,LED芯片的电流扩展不佳,其正向电压较高,电光转换效率为43.8％;氧气体积流量为0.4 cm3/min时,ITO薄膜的方块电阻和透过率分别为58 Ω/口和95.4％,LED芯片的电流扩展最佳,其亮度最高、正向电压最低,电光转换效率较高,为52.9％.     

高温工艺对TiSi_2/n~+-Poly-Si复合栅MOS电容特性及TiSi_2膜性质的影响

本文研究了高温退火过程对TiSi_2/n~+-POly-Si 复合栅MOS电容电学性能及TiSi_2膜特性的影响.结果表明,当炉退火温度高于900℃时,TiSi_2层厚度变的不均匀,甚至在某些地方不连续;TiSi_2/n~+Poly-Si 界面十分不平整;多晶硅中杂质外扩散十分严重; MOS电容的性能和电学参数变差.对于RTA过程,高温退火对MOS电容的电学特性没有产生不利影响,TiSi_2膜仍很均匀.所以,在 TiSi_2/Poly-Si复合栅结构工艺中,高温退火过程最好采用 RTA技术.     

退火工艺对Al离子注入的4H-SiC表面形貌的影响

通过应用多次Al离子注入和CVD中的高温退火技术,在SiC片表面形成了p型层。p型层中各深度下Al的浓度均为110¹⁹cm^-3,层厚为550nm。本文应用三种不同的退火工艺对注入后的SiC进行退火。通过测量和比较表面粗糙度,发现通过石墨层覆盖来保护表面的退火工艺可以很好的阻止SiC表面在高温退火下的粗化,粗糙度保持在3.8nm。通过其他两种(在氩气保护下、在SiC保护片的覆盖下)退火工艺退火所得到的表面有明显的台阶,粗糙度分别为12.2nm和6.6nm。     

PLD法制备ITO导电薄膜及其性能

为了研制可用于高温环境下进行应变测量的应变层,采用脉冲激光沉积(PLD)法在陶瓷基底上制备了氧化铟锡(ITO)薄膜.研究了PLD法中不同基底温度对ITO薄膜显微结构、电学性能以及阻温特性的影响.采用X射线衍射仪(XRD)测试了薄膜的晶体结构,通过四点探针测量法测得薄膜的薄层电阻,采用场发射扫描电子显微镜(FESEM)对...     

SiC功率器件离子注入和退火设备及工艺验证

针对SiC功率器件工艺制程中离子注入和激活退火的技术难题,利用爱发科公司自行设计并开发的高温离子注入设备(ULVAC,IH-860DSIC)、碳膜溅射设备(ULVAC,SME-200)和高温激活退火设备(ULVAC,PFS-6000-25)。通过计算模拟、AFM对比结果、Hall电阻测定和RHEED图像分析等表征手段,研究了高温高能多步注入、碳膜覆盖技术和退火温度分别对SiC器件的物理特性、表面特性及电学特性的影响。结果表明,采用500℃Al离子注入浓度为5×1018cm-3、20 nm厚碳膜溅射技术和1 700~2 000℃激活退火技术,能够实现具有良好表面特性和电学特性的p型SiC掺杂工艺。设备的稳定性已在多条SiC生产线上用于制造SiCSBD器件和SiC-MOSFET器件完成工艺验证。     

LCD制程中热处理对ITO膜电学和光学性质的影响

研究了不同方块电阻值及不同生产厂家的ITO玻璃在LCD生产制程中受热处理(主要是PI固化和热压过程)后，其ITO膜方块电阻和透过率的变化情况及其原因分析，为液晶显示器设计中ITO玻璃的选取提供了参考和依据。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks