The fabrication and application of Ni-DNA nanowire-based nanoelectronic devices

DNA is a self-assembled, double stranded natural molecule that can chelate and align nickel ions between its base pairs. The fabrication of a DNA-guided nickel ion chain (Ni-DNA) device was successful, as indicated by the conducting currents exhibiting a Ni ion redox reaction-driven negative differential resistance effect, a property unique to mem-elements (1). The redox state of nickel ions in the Ni-DNA device is programmable by applying an external bias with different polarities and writing times (2). The multiple states of Ni-DNA-based memristive and memcapacitive systems were characterized (3). As such, the development of Ni-DNA nanowire device-based circuits in the near future is proposed.

     

Massive assembly of ZnO nanowire-based integrated devices

Although a directed assembly strategy has been utilized for the massive assembly of various nanowires and nanotubes (NWs/NTs), its application has usually been limited to rather small-diameter NWs/NTs prepared in solution. We report two complementary methods for the massive assembly of large-size ZnO nanowires (NWs). In the solution-phase method, ZnO NWs were assembled and aligned selectively onto negatively charged surface patterns in solution. In addition, the substrate bias voltage and capillary forces can be used to further enhance the adsorption rate and degree of alignment of ZnO NWs, respectively. In the direct-transfer method, a NW film grown on a solid substrate was placed in close proximity to?a?molecule-patterned substrate, and ultrasonic vibration was applied so that the NWs were directly transferred and aligned onto the patterned substrate. The solution-phase and direct-transfer methods are complementary to each other and suitable for the assembly of NWs?prepared in solution and on solid substrates, respectively.     

Fabrication and characterization of ZnO film based UV photodetector

ZnO films were deposited on Al₂O₃ substrates by metalorganic chemical vapor deposition (MOCVD) at temperatures of 400, 450 and 500 °C. The photoconductivity of the films has been analyzed for ultraviolet detector application. The changes in photoresponse and current–voltage (I–V) are correlated with the deposition temperatures and microcrystalline structures. The study suggested that the photoresponse originating from bulk- and surface-related processes. For a film deposited at 400 °C, a 1 ms fast rising time and a 5 ms fall time were observed. The photoresponsivity is ∼24 A/W with a 3 V bias.     

Synthesis and characterization of nanowire-based anisotropic conductors

We investigated the potential of commercially available porous templates to be used for the fabrication of functional anisotropic conductors. A galvanostatic deposition technique was used to fabricate arrays consisting of 200 nm diameter nanowires inside the pores of polycarbonate membranes. A tape lift-off procedure allowed the complete removal of any residual metal from both sides of the polymer membrane to form an anisotropic conductive film. The 10 microm thick film has roughly 3 x 10(8) nanowires per cm2, and it showed near zero electrical resistance perpendicular to the surface while appearing completely open to circuits between any points on the surface. The preparation of the film, characterization using SEM, AFM, and resistance measurements are presented. The 1D conductivity of these membranes may have many potential applications for microelectronic interconnects for packaging technologies.     

Dielectrophoretic batch fabrication of bundled carbon nanotube thermal sensors

We present a feasible technology for batch assembly of carbon nanotube (CNT) devices by utilizing ac electrophoretic technique to manipulate multiwalled bundles on an Si/SiO/sub 2/ substrate. Based on this technique, CNTs were successfully and repeatably manipulated between microfabricated electrodes. By using this parallel assembly process, we have investigated the possibility of batch fabricating functional CNT devices when an ac electrical field is applied to an array of microelectrodes that are electrically connected together. Preliminary experimental results showed that over 70% of CNT functional devices can be assembled successfully using our technique, which is considered to be a good yield for nanodevices manufacturing. Besides, the devices were demonstrated to potentially serve as novel thermal sensors with low power consumption (/spl sim/microwatts) with electronic circuit response of approximately 100 kHz in constant current mode operation. In this paper, we will present the fabrication process of this feasible batch manufacturable method for functional CNT-based thermal sensors, which will dramatically reduce production costs and production time of nanosensing devices and potentially enable fully automated assembly of CNT-based devices. Experimental results from the thermal sensors fabricated by this batch process will also be discussed.     

Submicrometre resolved optical characterization of green nanowire-based light emitting diodes

The electroluminescent properties of InGaN/GaN nanowire-based light emitting diodes (LEDs) are studied at different resolution scales. Axial one-dimensional heterostructures were grown by plasma-assisted molecular beam epitaxy (PAMBE) directly on a silicon (111) substrate and consist of the following sequentially deposited layers: n-type GaN, three undoped InGaN/GaN quantum wells, p-type AlGaN electron blocking layer and p-type GaN. From the macroscopic point of view, the devices emit light in the green spectral range (around 550 nm) under electrical injection. At 100 mA DC current, a 1 mm2 chip that integrates around 10(7) nanowires emits an output power on the order of 10 μW. However, the emission of the nanowire-based LED shows a spotty and polychromatic emission. By using a confocal microscope, we have been able to improve the spatial resolution of the optical characterizations down to the submicrometre scale that can be assessed to a single nanowire. Detailed μ-electroluminescent characterization (emission wavelength and output power) over a representative number of single nanowires provides new insights into the vertically integrated nanowire-based LED operation. By combining both μ-electroluminescent and μ-photoluminescent excitation, we have experimentally shown that electrical injection failure is the major source of losses in these nanowire-based LEDs.     

Array of ZnO nanoparticle-sensitized ZnO nanorods for UV photodetection

Vertically aligned ZnO nanorod (NR) arrays have been successfully synthesized on ITO-glass substrate by hydrothermal growth. Chemical bath deposition method was used to deposit ZnO nanoparticles (NPs) onto the ZnO NRs. These structures were applied in fabricating ZnO NPs sensitized ultraviolet (UV) photodetectors (PDs). Incorporation of ZnO NPs onto ZnO NRs results in distinct improvement of optical properties of ZnO NRs, i.e., significant enhancement of emission as well as effective suppression of defects emission in ZnO. Furthermore, there is a noticeable blue-shift in absorption spectra compared with that of ZnO NRs structure. I–V characteristics show that the sensitized structure improved photocurrent almost twice that of unsensitized ZnO NRs. Consequently, these findings may open new opportunities for the integration of different ZnO nanostructures for application in UV region particularly fabrication of UV PDs.     

The fabrication and characterization of a metallic glass coating

This paper presents t~e results o.fa study on the use ofplasma spraying for the fabrication of metallzc glass coatmgs on mzld steel. A commercial, nickel-based alloy powder, Amdry 915, was found to produce sound, amorphous coatings.

The hardness, strength and wear coefficient of the coating are related to the crystallzmty of the alloy. It is shown that the properties of the plasma-sprayed coating compare favourably wzth those of a metallic glass ribbon made of the same commercial alloy.     

Ultrasonic-assisted fabrication of superhydrophobic ZnO nanowall films

Zinc oxide-based superhydrophobic surfaces were fabricated on aluminium oxide-seeded glass substrates via sonochemical approach by varying the parameter, the sonication time duration. The fabricated structures have nanowall-like morphology with an average long axis length and thickness of \({\sim }300\) and \({\sim }40~\hbox {nm}\), respectively.  The surface roughness created by surface-modified ZnO nanowalls and the air pockets trapped within the dense nanowalls, transformed the hydrophobic glass substrates into superhydrophobic surfaces with water contact angle of \(156{^{\circ }}\) during 20 min of sonication. An independent analysis was carried out to study the growth of ZnO nanowalls over glass substrates in the absence of the aluminium oxide seed layer and sonication process. The results suggested that the synergistic effect of the aluminium oxide seed layer and sonochemical process can enable the formation of ZnO nanowall structures favourable for superhydrophobic property. A possible growth mechanism of ZnO nanowalls formation during sonication process has been discussed in detail.     

Simulation, fabrication and characterization of ZnO based thin film transistors grown by radio frequency magnetron sputtering

We report the performance of the thin film transistors (TFTs) using ZnO as an active channel layer grown by radio frequency (RF) magnetron sputtering technique. The bottom gate type TFT, consists of a conventional thermally grown SiO2 as gate insulator onto p-type Si substrates. The X-ray diffraction patterns reveal that the ZnO films are preferentially orientated in the (002) plane, with the c-axis perpendicular to the substrate. A typical ZnO TFT fabricated by this method exhibits saturation field effect mobility of about 0.6134 cm2/V s, an on to off ratio of 102, an off current of 2.0 x 10(-7) A, and a threshold voltage of 3.1 V at room temperature. Simulation of this TFT is also carried out by using the commercial software modeling tool ATLAS from Silvaco-International. The simulated global characteristics of the device were compared and contrasted with those measured experimentally. The experimental results are in fairly good agreement with those obtained from simulation.     

Synthesis, characterization, UV and dielectric properties of hexagonal disklike ZnO particles embedded in polyimides

A series of novel ZnO/polyimide composite films with different ZnO contents was prepared through incorporation hexagonal disklike ZnO particles into poly(amic acid) of the pre polymer of the polyimide. The hexagonal disklike ZnO particles with a diameter of 300-500 nm were synthesized from zinc acetate and NaOH in water with citric acid. The prepared zinc oxide-polyimide composites were characterized for their structure, morphology, and thermal behavior employing Fourier transform infrared spectroscopy, scanning electron micrograph, X-ray diffraction and thermal analysis techniques. Thermal analyses show that the ZnO particles were successfully incorporated into the polymer matrix and these ZnO/polymer composites have a good thermal stability. Scanning electron microscopy studies indicate the ZnO particles were uniformly dispersed in the polymer and they remained at the original size (300-500 nm) before immobilization. All composite films with ZnO particle contents from 1 to 5 wt% show good transparency in the visible region and luminescent properties.     

Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells

We report the fabrication, characterization and simulation of Si nanowire SONOS-like non-volatile memory with HfO(2) charge trapping layers of varying thicknesses. The memory cells, which are fabricated by self-aligning in situ grown Si nanowires, exhibit high performance, i.e. fast program/erase operations, long retention time and good endurance. The effect of the trapping layer thickness of the nanowire memory cells has been experimentally measured and studied by simulation. As the thickness of HfO(2) increases from 5 to 30 nm, the charge trap density increases as expected, while the program/erase speed and retention remain the same. These data indicate that the electric field across the tunneling oxide is not affected by HfO(2) thickness, which is in good agreement with simulation results. Our work also shows that the Omega gate structure improves the program speed and retention time for memory applications.     

The evolution of well-aligned amorphous carbon nanotubes and porous ZnO/C core-shell nanorod arrays for photosensor applications

Well-aligned amorphous carbon nanotube (a-CNT) and porous ZnO/C core-shell nanorod (NR) arrays were fabricated for the first time by a proposed deposition-etching-evaporation (DEE) route. The arrays were prepared by deposition of carbon on the surface of well-aligned ZnO NR arrays by thermal decomposition of acetone followed by spontaneous etching and evaporation of core-ZnO. By utilizing the decomposition of acetone as well as distinct degrees of interaction between intermediate products and ZnO, well-aligned nonporous ZnO/C core-shell NR, porous ZnO/C core-shell NR, and a-CNT arrays were separately prepared by varying the working temperature from 400 to 700?°C. Scanning electron microscopy and high-resolution transmission electron microscopy show that the thickness of carbon shells increases from 3 to 10 nm with the increase in working temperature. Raman spectra demonstrate slight sp(2) bonds of carbon, indicating small graphite regions embedded in amorphous carbon nanoshells. The E(2) peaks of ZnO reduce with the increase in substrate temperature. Photoresponse measurements of ZnO/C NR arrays shows enhancement of both photoresponsivity and response velocity, and the interference of humidity with regard to photosensing is effectively reduced by the capping of carbon nanoshells. The work not only provides an effective route to improve the photosensing of semiconductor nanomaterials for practical applications, but also sheds light on preparing various hollow carbon and porous ZnO/C core-shell nanostructures with distinct morphologies by employing the routes presented in the paper on diverse ZnO nanostructures for optoelectrochemical applications.     

Rapid thermal annealed Al-doped ZnO film for a UV detector

A low-resistive Al-doped ZnO (AZO) film was achieved by rapid thermal annealing. A co-sputtering method was used in the initial growth of AZO films and a rapid annealing process was performed on the as-deposited AZO film under N₂ atmosphere for 3 min. An as-deposited AZO film had an optical transmittance of 84.78% at 550 nm and a resistivity of 7.8 × 10^− 3 Ω cm. A rapid annealing process significantly improved the optical transmittance and electrical resistivity of the AZO film to 99.67% and 1 × 10^− 3 Ω cm, respectively. The structural changes of the AZO films were investigated by X-ray diffraction and transmission electron microscopy. The high quality AZO film was used to fabricate a metal-semiconductor-metal (MSM) structure for a UV detector. The MSM device provided a stable current of 25 μA at a bias of 2 V in a dark condition. Under UV illumination, the MSM device was highly responsive to UV light uniformly and repeatedly, and it enhanced the current by 80% at 45 μA. This rapid thermal annealing process may provide a useful method to fabricate quality AZO films for photoelectric applications with a low thermal budget.     

Low-temperature fabrication of bunch-shaped ZnO nanowires using a sodium hydroxide aqueous solution

Bunch-shaped ZnO nanowires film was successfully fabricated by the forced-hydrolysis-initiated-nucleation of anhydrous zinc acetate in an aqueous solution of zinc acetate and sodium hydroxide at low temperature. X-ray diffraction and a field emission scanning electron microscope clarified their formation mechanism and morphology development. The morphology was controllable by adjusting the solution temperature and deposition time. ZnO nanowires obtained at 65 degrees C for 6 h have a high aspect ratio of about 106. The smaller diameter with higher aspect ratio of ZnO nanowires, the easier the formation of bunch shapes by the capillary force during the drying process. This fabrication technique indicated that bunched ZnO film was prepared at low cost, and fittable to low heat-resistance substrates such as a polymer substarte.     

Shape and size-controlled fabrication of ZnO nanostructures using novel templates

A simple wet chemical method was developed to control the size and shape of the Zinc oxide (ZnO) nanostructures in the presence of new, efficient, and low-cost templates like ameline, sorbitol, and polyethylene glycol (PEG, M_w = 200) at low temperature within a few minutes. Nanorods and nanoparticles have been achieved through applying these templates and tuning other growth parameters. The products were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The effect of the growth parameters such as template, Zn²⁺ source/Template ratio, pH, reaction time, and temperature on the growth and morphology of ZnO nanostructures have been investigated in detail. The results revealed that template has an important effect on the morphology and size of the ZnO nanostructures. Also, reaction time is believed to be a key factor because it can change the quality of nano ZnO produced by this method. By tuning these parameters nanorods, nano particle/rod, nano porous structures have been achieved.     

AlN codoping and fabrication of ZnO homojunction by RF sputtering

The ZnO homojunction fabricated from undoped and 1 mol% AlN doped (codoped) ZnO targets by RF magnetron sputtering has been reported. The grown films on Si (100) substrate have been characterized by X-ray diffraction (XRD), Energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Photoluminescence (PL) and Hall measurements. The increase of d-space value (compared with unstressed bulk) found from XRD for AlN codoped ZnO film supports the formation of p-ZnO due to the N incorporation. The presence of N in the film has been confirmed by EDS and XPS analysis. Further, the p-conductivity in AlN codoped ZnO has been evidenced by low temperature PL (donor-acceptor-pair emission) and room temperature PL (red shift in near-band-edge emission). Hall measurement shows that 1 mol% AlN codoped ZnO has the hole concentration of 3.772 × 10¹⁹ cm⁻³. The fabricated homojunction with 1% AlN doped ZnO (p-type) and undoped ZnO (n-type) exhibits a typical rectification behavior with high breakdown voltage, and rectification ratio, 13.4. The junction parameters such as ideality factor, barrier height and series resistance have also been calculated for the fabricated p-n junction. The energy band diagram has been proposed for the fabricated homojunction.     

Facile synthesis and characterization of ZnO NPs,ZnO/CdO and ZnO/SnO2 nanocomposites for photocatalytic degradation of Eosin Yellow and Direct Blue 15 under UV light irradiation

Journal of Materials Science: Materials in Electronics - In the present report, the synthesis of ZnO NPs, ZnO/CdO NCs, and ZnO/SnO2 NCs was successfully achieved by co-precipitation technique. The...     

Optical characterization of ZnO

The green (2.19 eV) and yellow (2.00 eV) luminescence bands in ZnO polycrystalline samples were studied by photoluminescence, excitation luminescence, time-resolved spectroscopy and lifetime measurements. A shift towards higher energies of the green emission band is observed for temperatures above 35 K indicating that at least two excited levels 74 meV apart are involved in the recombination process.