Growth of mane-like ZnS nanostructures by using a two-heating zone-tube furnace: structural characterization and photoluminescence

We have synthesized ZnS nanowires with mane-like branches by thermal evaporation of ZnS powder on the Au-coated Si(100) substrate using a two-heating zone tube furnace. The ZnS powder and the Si substrate were kept at 1,000 and 850 °C, respectively, in a nitrogen atmosphere during synthesis of the ZnS nanostructures. Field emission scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and photoluminescence (PL) spectroscopy analyses were performed to investigate the structure, morphology and photoluminescence properties of the products. The axial nanowires grow along the [002] direction and have diameters of 100–200 nm, while on the other hand the branch nanowires grow along the [101] direction and their diameters and lengths are 30–50 and 800–100 nm, respectively. The room temperature PL spectrum with a Gaussian fitting exhibits two visible light emission bands centered at around 397 and 458 nm.     

Zn-catalysed growth and optical properties of modulated ZnO hierarchical nanostructures

Modulated ZnO hierarchical nanostructures have been successfully synthesised by the one-step thermal evaporation method. The ZnO hierarchical nanostructures consist of large quantities of high-dense nanowires strewn with some small balls, and these balls are connected with wires by short rods. The composition detection results show that the ball is metallic Zn, which further confirms that Zn can serve as the catalyst for vapour–liquid–solid growth of the ZnO hierarchical nanostructures. The photoluminescence spectrum of the modulated ZnO hierarchical nanostructures includes a weak ultraviolet peak centred at 380?nm and a strong green emission centred at 500?nm, which can be attributed to the exciton emission at the near-band edge and a mass of singly ionised oxygen vacancies in products, respectively.     

Direct synthesis of ZnO nanowire arrays on Zn foil by a simple thermal evaporation process

ZnO nanowire arrays were synthesized on zinc foil by a simple thermal evaporation process at relatively low temperature. Morphology and size controlled synthesis of the ZnO nanostructures was achieved by variation of the synthesis temperature, reaction time and the surface roughness of the substrate. A gas-solid and self-catalytic liquid-solid mechanism is proposed for the growth of nanowires at different temperatures. High-resolution transmission electron microscopy (HRTEM) showed that the as-grown nanowires were of single crystal hexagonal wurtzite structure, growing along the [101] direction. Photoluminescence exhibited strong UV emission at ～382?nm and a broad green emission at ～513?nm with 325?nm excitation. Raman spectroscopy revealed a phonon confinement effect when compared with results from bulk ZnO. The nanowire arrays also exhibited a field emission property.     

Electron Tomography Reveals the Droplet Covered Surface Structure of Nanowires Grown by Aerotaxy

For the purpose of functionalizing III‐V semiconductor nanowires using n‐doping, Sn‐doped GaAs zincblende nanowires are produced, using the growth method of Aerotaxy. The growth conditions used are such that Ga droplets, formed on the nanowire surface, increase in number and concentrations when the Sn‐precursor concentration is increased. Droplet‐covered wires grown with varying Sn concentrations are analyzed by transmission electron microscopy and electron tomography, which together establish the positioning of the droplets to be preferentially on {?111}B facets. These facets have the same polarity as the main wire growth direction, [?1?1?1]B. This means that the generated Ga particles can form nucleation sites for possible nanowire branch growth. The concept of azimuthal mapping is introduced as a useful tool for nanowire surface visualization and evaluation. It is demonstrated here that electron tomography is useful in revealing both the surface and internal morphologies of the nanowires, opening up for applications in the analysis of more structurally complicated systems like radially asymmetrical nanowires. The analysis also gives a further understanding of the limits of the dopants which can be used for Aerotaxy nanowires.     

Synthesis and characterisation of γ-Fe2O3 nanowire arrays via a versatile,simple and low-cost method

γ-Fe₂O₃ nanowire arrays embedded in anodic alumina template were fabricated by an improved sol–gel method. The morphologies, structures and magnetic behaviour of the as-prepared products were investigated by X-ray powder diffraction, transmission electron microscopy, selected area electron diffraction, field emission scanning electron microscopy and magnetic hysteresis analysis. The results show that arrayed γ-Fe₂O₃ polycrystalline nanowires with an average diameter about 40?nm and an average length about 0.5?µm were prepared. A number of superparamagnetic nanoneedles grew along the nanowires. The ordered one-dimensional arrays weaken the superparamagnetic effect. In addition, a possible formation mechanism about nanowires is proposed. The charge factor, gravity effect and molecular heat movement impelled the Fe sols filling into the pores of the template. γ-Fe₂O₃ nanowire arrays look forward to the applications of magnetic recording in the future.     

Growth and optical properties of sallow-like hierarchical SnO2 nanostructures

Novel self-organized hierarchical SnO2 nanostructures have been successfully prepared by vapor phase transport with the assistance of a stainless-steel grid at 950 degrees C. Scanning electron microscopy shows that the synthesized product displays interesting sallow-like morphology, in which numerous secondary branches (beak-like nanowires) are grown randomly around the main stems (microwires). Transmission electron microscopy analysis indicates that the branches grow along a direction of [100] and the beak is formed with the growth direction switching to [110]. A room temperature photoluminescence spectrum of the present SnO2 nanostructures shows a strong emission at 572 and 604 nm(-1).     

One-Dimensional （1D） ZnS Nanomaterials and Nanostructures

One-dimensional （1D） nanomaterials and nanostructures have received much attention due to their potential interest for understanding fundamental physical concepts and for applications in constructing nanoscale electric and optoelectronic devices. Zinc sulfide （ZnS） is an important semiconductor compound of Ⅱ-Ⅵ group, and the synthesis of 1D ZnS nanomaterials and nanostructures has been of growing interest owing to their promising application in nanoscale optoelectronic devices. This paper reviews the recent progress on 1D ZnS nanomaterials and nanostructures, including nanowires, nanowire arrays, nanorods, nanobelts or nanoribbons, nanocables, and hierarchical nanostructures etc. This article begins with a survey of various methods that have been developed for generating 1D nanomaterials and nanostructures, and then mainly focuses on structures, synthesis, characterization, formation mechanisms and optical property tuning, and luminescence mechanisms of 1D ZnS nanomaterials and nanostructures. Finally, this review concludes with personal views towards future research on 1D ZnS nanomaterials and nanostructures.     

Synthesis of doped ZnS one-dimensional nanostructures via chemical vapor deposition

ZnS one-dimensional (1D) nanostructures doped with Mn or Cd have been rapidly synthesized in large scale via a chemical vapor deposition process. Using Zn and S as precursors and MnCl₂ or Cd as doping source, the doped ZnS 1D nanostructures were obtained. X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM) were employed to characterize the as-synthesized ZnS nanostructures. The catalytically grown ZnS 1D nanostructures, including nanowires and nanoribbons, are tens of micrometers in length. All the products are wurtzite ZnS in structure and preferentially grow along the [001] direction. The room temperature photoluminescence properties of these doped ZnS nanostructures are presented.     

Si/InGaN core/shell hierarchical nanowire arrays and their photoelectrochemical properties

Three-dimensional hierarchical nanostructures were synthesized by the halide chemical vapor deposition of InGaN nanowires on Si wire arrays. Single phase InGaN nanowires grew vertically on the sidewalls of Si wires and acted as a high surface area photoanode for solar water splitting. Electrochemical measurements showed that the photocurrent density with hierarchical Si/InGaN nanowire arrays increased by 5 times compared to the photocurrent density with InGaN nanowire arrays grown on planar Si (1.23 V vs RHE). High-resolution transmission electron microscopy showed that InGaN nanowires are stable after 15 h of illumination. These measurements show that Si/InGaN hierarchical nanostructures are a viable high surface area electrode geometry for solar water splitting.     

Synthesis and optical properties of hierarchical pure ZnO nanostructures

We report the catalyst-free synthesis of hierarchical pure ZnO nanostructures with 6-fold structural symmetry by two-step thermal evaporation process. At the first step, the hexagonal-shaped nanowires consisting of a great deal of Zn and little oxide were prepared via the layer-by-layer growth mechanism; and at the second step, hierarchical pure ZnO nanostructures were synthesized by evaporating the Zn source on the basis of the step-one made substrate. Scanning electron microscopy, transmission electron microscope images, and the corresponding selected area electron diffraction pattern have been utilized to reveal the screw dislocation growth mechanism, through which the single crystal ZnO nanorods are epitaxially grown from the side-wall of central axial nanowires. Raman and photoluminescence spectra further indicate that, for the hierarchical ZnO nanostructures, the ultraviolet peak is related to the free exciton recombination, while the oxygen vacancies and high surface-to-volume ratio are responsible for the strong green peak emission.     

Patterned procedure for template-synthesis and microstructural characterization of copper nanowires

Highly ordered circular patterns of copper nanowire arrays were successfully deposited into designed anodic aluminum oxide templates. High-resolution transmission electron microscopy was used to study the microstructure of these Cu nanostructures. The results showed that the growth orientation of the copper nanowires was along [220] direction, and the broken orientation were along [2?02?] and [02?2] directions, respectively. Regular cones were formed at the broken end of nanowires. Bent nanowires were also observed, this means that the copper nanowires have good mechanical properties when applied external force. Chemical analysis has been performed on Cu nanowires using electron energy-loss spectroscopy.     

ZnO-Sn:ZnO core-shell nanowires and ZnO-Zn2SnO4 comb-like nanocomposites

Novel single-crystalline ZnO-Sn:ZnO (SZO) core-shell nanowires and ZnO-Zn2SnO4 (ZTO) comb-like nanocomposites were synthesized by thermal chemical vapor deposition at a low temperature of 650 degrees C. Scanning electron microscopy and transmission electron microscopy show the diameters and lengths of the core-shell nanowires are in ranges of 25-60 nm and 300-500 nm, respectively. The atomic ratios of Sn to (Zn + Sn) in the central and shell parts of the nanowire are 0.4 at.% and 6.1 at.%, respectively. The ZnO-ZTO comb-like nanocomposites possess ZnO nanocombs with ZTO nano-layers deposited on both sides of them. The ZnO branches and ZTO layers are single-crystalline wurtzite and spinel structures growing along the [0002] and [111] directions, respectively. Room-temperature cathodoluminescence measurements show the nanocomposites exhibit strong ultraviolet (UV) emissions at 300, 384 nm, and a broad green emission. The novel luminescence shows promising singularity for opto-electronic applications.     

Effect of the ammoniating time on microstructure and morphology of one-dimensional Mg-doped GaN nanowires catalysed with Au

Mg-doped GaN nanowires have been successfully synthesised on Si(1?1?1) substrates by magnetron sputtering through ammoniating Ga₂O₃/Au thin films, and the effect of ammoniating time on microstructure and morphology were analysed in detail. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy and photoluminescence spectrum were carried out to characterise the microstructure, morphology and optical properties of the GaN samples. The results demonstrate that the nanowires after ammonification at 900°C for 15?min are single crystal GaN with a hexagonal wurtzite structure and high crystalline quality, having the size of 50–80?nm in diameter, more than 10 microns in length and good emission properties. The growth direction of this nanowire is parallel to [0?0?1] direction of hexagonal unit cell. Ammoniating time has a great impact on the microstructure, morphology and optical properties of the GaN nanowires.     

Ultralong zinc-blende ZnS nanowires grown on polar C face of 6H-SiC substrates at low temperatures by metalorganic chemical vapor deposition

Ultralong ZnS nanowires with high purity were grown on Au-coated polar C face of 6H-SiC substrates via metalorganic chemical vapor deposition at low temperatures. The ZnS nanowires have zinc-blende structure and the length is up to tens of micrometers. HRTEM investigations show that the nanowires are well crystalline single crystal grown along [1 1 1] and free of bulk defects. However, sparse straight and curved nanowires with poor crystalline nature are randomly grown on the Au-coated Si face of 6H-SiC substrates. We deduce that the growth of ZnS is related to the substrates and C face can enhance Au-catalytic VLS growth. The CL spectra of an individual nanowire grown on C and Si face reveal different optical properties. Intrinsic sulfur and zinc vacancies are the main reasons for the 458.1 nm and 459.2 nm blue emission detected in the nanowire grown on C face and Si face, respectively. Nevertheless, an unusual green emission at 565.1 nm is observed in the poor crystalline nanowire grown on Si face, which originates from the bulk defects.     

Fabrication of superhydrophobic surfaces by a Pt nanowire array on Ti/Si substrates

Superhydrophobic surfaces were prepared on Ti/Si substrates via the fabrication of a platinum (Pt) nanowire array. The Pt nanowire array was obtained by dc electrodeposition of Pt into the pores of an anodic aluminium oxide (AAO) template on the substrate followed by the removal of the template. Transmission electron microscopy (TEM) examination demonstrated that all the nanowires have uniform diameter of about 30?nm. Field emission scanning electron microscopy (FE-SEM) showed that the structures at both the micrometre scale and nanometre scale bestowed the prerequisite roughness on the surfaces. The chemical surface modification made the Pt nanowire array superhydrophobic. The surface modified Pt nanowire array exhibited superhydrophobicity even in corrosive solutions over a wide pH range, such as acidic or basic solutions. The results demonstrated that the Pt nanowire array will have good potential applications in the preparation of superhydrophobic surfaces.     

Sn-catalyzed growth of MgO nanowires

We reported the fabrication and characterization of MgO nanowires, which were grown by thermal evaporation of the mixture of MgB2 and Sn powders at 800 degrees C through a vapor-liquid-solid (VLS) process. We characterized as-synthesized MgO nanowires using X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Sn nanoparticles were located at the tips of the nanowires, serving as catalyst for the growth of MgO nanowires. The produced nanowires were of cubic MgO structures with diameters in the range of 10-170 nm. The PL measurement with a Gaussian fitting exhibited visible light emission bands centered at 403, 576, and 720 nm.     

ZnO nanostructures grown on epitaxial GaN

Presented is the growth of zinc oxide nanorod/nanowire arrays on gallium nitride epitaxial layers. A hierarchical zinc oxide morphology comprising of different scale zinc oxide nanostructures was observed. The first tier of the surface comprised of typical zinc oxide nanorods, with most bridging to adjacent nanorods. While the second tier comprised of smaller zinc oxide nanowires approximately 30 nm in width often growing atop the aforementioned bridges. Samples were analysed via scanning electron microscopy, as well as, cross-sectional and high resolution transmission electron microscopy to elucidate the detailed growth and structural elements of the heterostructure.     

The growth of ultralong and highly blue luminescent gallium oxide nanowires and nanobelts, and direct horizontal nanowire growth on substrates

We report the growth of ultralong β-Ga(2)O(3) nanowires and nanobelts on silicon substrates using a vapor phase transport method. The growth was carried out in a tube furnace, with gallium metal serving as the gallium source. The nanowires and nanobelts can grow to lengths of hundreds of nanometers and even millimeters. Their full lengths have been captured by both scanning electron microscope (SEM) and optical images. X-ray diffraction (XRD) patterns and transmission electron microscope (TEM) images have been used to study the crystal structures of these nanowires and nanobelts. Strong blue emission from these ultralong nanostructures can be readily observed by irradiation with an ultraviolet (UV) lamp. Diffuse reflectance spectroscopy measurements gave a band gap of 4.56?eV for these nanostructures. The blue emission shows a band maximum at 470?nm. Interestingly, by annealing the silicon substrates in an oxygen atmosphere to form a thick SiO(2) film, and growing Ga(2)O(3) nanowires over the sputtered gold patterned regions, horizontal Ga(2)O(3) nanowire growth in the non-gold-coated regions can be observed. These horizontal nanowires can grow to as long as over 10?μm in length. Their composition has been confirmed by TEM characterization. This represents one of the first examples of direct horizontal growth of oxide nanowires on substrates.     

Synthesis of the tube-brush-shaped SiC nanowire array on carbon fiber and its photoluminescence properties

Tube-brush-shaped nanostructure of SiC nanowires was synthesized on polyacrylonitrile-based carbon fibers. The morphology and microstructure of the nanowires were characterized by X-ray powder diffraction, field emission scanning electron microscopy and high-resolution transmission electron microscopy. A quasi-periodically twin structure with (111) plane as the boundary along the SiC nanowires was observed. The vapor-solid growth mechanism of the SiC nanowire brush is also discussed. Moreover, some separated blue-shifted photoluminescence peaks around 469 nm were measured. The separated blue-shifted emission peaks are attributed to the quantum confinement of nanoscaled twin segments along each nanowire rather than the apparent diameters of the nanowires. The SiC nanowire brushes hopefully can find potential applications in nanotechnology.     

Preparation and characterization of ZnO/ZnS core/shell nanocomposites through a simple chemical method

In this paper, we reported the preparation of ZnO/ZnS core/shell nanocomposites by sulfidation of ZnO nanostructures via a simple hydrothermal method. The precursors of bare ZnO nanoparticles and ZnO nanorods were synthesized by a surfactant-assisted hydrothermal growth. The structural, morphological, and element compositional analysis of bare ZnO nanostructures and ZnO/ZnS core/shell nanocomposites were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy techniques. The XRD results indicated that the phase of bare ZnO nanoparticles and ZnO nanorods was wurtzite structure, and the phase of coated ZnS nanoparticles on the surface of bare ZnO nanostructures was sphalerite structure with the size of about 8 nm. Photoluminescence measurement was carried out, and the PL spectra of ZnO/ZnS core/shell nanocomposites revealed an enhanced UV emission and a passivated orange emission compared to that of bare ZnO nanostructures. In addition, the growth mechanism of ZnO/ZnS core/shell nanostructures through hydrothermal method was preliminarily discussed.