Magnetic and Transport Properties of Mn()l)8Cr()()2Te Epitaxial Films Grown on A1,0、Substrates

The epitaxial Mno0.98Cr0.02Te films on single crystal Al2O3 （0001） substrates were prepared by pulsed laser deposition. The X-ray diffraction and scanning electron microscopy results showed that the good continuous epitaxial film was obtained with substrate temperature of 500 ℃. When the substrate temperature reached 700 ℃, the film was island growth and the manganese oxides phase appeared. The temperature dependence of both the magnetization and electrical resistance showed a sharp rise at around 60 K due to the magnetoelastic coupling. The temperature dependence of the electrical resistance of Mno0.98Cr0.02Te provided evidence for a transition from the metallic to semiconducting state at 305 K due to the spin disorder scattering with a large contribution from the influence of magnon drag.     

P型掺锌硫化铜铝透明导电薄膜的制备和性能研究

采用渠道火花烧蚀技术,在普通玻璃基板上制备掺锌硫化铜铝CuAl0.90Zn0.10S2透明导电薄膜.运用X射线衍射法(XRD)和原子力显微镜(AFM)分析薄膜的晶体结构和表面形貌.研究不同的制备条件对薄膜光电性能的影响.结果显示,薄膜表面平整致密,均为p型导电.氩气压强和基板温度对薄膜的电阻率和载流子浓度具有显著影响,例如,随着氩气压强增加,电阻率会先降低再上升,而载流子浓度则先增加再降低.在优化的制备条件下,薄膜的电阻率最小值为0.2 Ω·cm,载流子浓度为6.67×1018 cm-3,载流子迁移率最大为1.06 cm2V-1S-1.在基板温度Ts=500 ℃时,获得了室温下最高电导率为50.9 S·cm-1的薄膜.薄膜可见光区域的平均透射率大于60%.