Dilute Al-Mn Alloys for Low-Temperature Device Applications

We discuss results on the superconducting, electron-transport, and tunneling properties of Al doped with Mn in the range of 1000 to 3000 ppm. We demonstrate that the critical temperature of Al can be systematically reduced to below 50 mK. Films are prepared by sputter deposition, and show values of d(ln R)/d(ln T) of ～500, indicating sharp superconducting transitions. Al-Mn/I/Al-Mn tunnel junctions show low sub-gap conductance and BCS-like characteristics. Our results in general suggest that the material is of interest for transition-edge sensors operating in the 100 mK regime and superconductor/insulator/superconductor (S/I/S) and normal/insulator/ superconductor (N/I/S) devices, in the latter case where heavily doped Al-Mn can replace the normal metal.     

Progress in Density of States Measurements of Al Lightly Doped with Mn

Alloys of Al lightly doped with Mn are tunable superconductors, potentially useful in normal-metal/insulator/superconductor refrigerators. The superconducting transition temperature varies with Mn concentration and the density of states is like a BCS superconductor with a reduced gap. We present results from superconducting tunnel junction measurements that demonstrate the BCS-like density of states. We discuss the limitations of our measurements based upon purity of the materials used to fabricate tunnel junctions, as well as our expectations for new measurements with cleaner materials.      

Atomic Layer Deposition of Tunnel Barriers for Superconducting Tunnel Junctions

We demonstrate a technique for creating high quality, large area tunnel junction barriers for normal–insulating–superconducting or superconducting–insulating–superconducting tunnel junctions. We use atomic layer deposition and an aluminum wetting layer to form a nanometer scale insulating barrier on gold films. Electronic transport measurements confirm that single-particle electron tunneling is the dominant transport mechanism, and the measured current–voltage curves demonstrate the viability of using these devices as self-calibrated, low temperature thermometers with a wide range of tunable parameters. This work represents a promising first step for superconducting technologies with deposited tunnel junction barriers. The potential for fabricating high performance junction refrigerators is also highlighted.     

Linker-free directed assembly of high-performance integrated devices based on nanotubes and nanowires

Advanced electronic devices based on carbon nanotubes (NTs) and various types of nanowires (NWs) could have a role in next-generation semiconductor architectures. However, the lack of a general fabrication method has held back the development of these devices for practical applications. Here we report an assembly strategy for devices based on NTs and NWs. Inert surface molecular patterns were used to direct the adsorption and alignment of NTs and NWs on bare surfaces to form device structures without the use of linker molecules. Substrate bias further enhanced the amount of NT and NW adsorption. Significantly, as all the processing steps can be performed with conventional microfabrication facilities, our method is readily accessible to the present semiconductor industry. We use this method to demonstrate large-scale assembly of NT- and NW-based integrated devices and their applications. We also provide extensive analysis regarding the reliability of the method.     

Dilute Al–Mn alloys for superconductor device applications

We discuss results on the superconducting and electron-transport properties of Mn-doped Al produced by sputter deposition. The critical temperature of Al has been systematically reduced to below 50 mK by doping with 1000–3000 ppm Mn. Values of the parameter are in the range of 450–500, indicating sharp normal-to-superconductor transitions. This material is thus of significant interest for both transition-edge sensors operating in the 100 mK regime and superconductor/insulator/superconductor and superconductor/insulator/normal devices, in the latter case where appropriately doped Al–Mn replaces the normal metal.     

Recent developments in detector research

Recently developed methods of cryogenic particle detection and potential applications will be introduced. The main part of this article focuses on our experimental results on two different approaches of detecting nuclear radiation with superconducting tunnel junctions. The best energy resolution is obtained when the junction itself serves as absorber. Using Sn/SnO_x/Sn tunnel junctions we obtained an energy resolution of about 90 eV for 6 keV X-rays up to now. The processes limiting the resolution of the present devices will be discussed. Larger absorber masses and position resolution are realized by an entirely new type of particle detector based on the detection of nonthermal phonons which are generated by the absorption of radiation within a single-crystalline absorber of dielectric material. We report on experimental tests of a detector composed of a silicon single crystal (size: 10 × 20 × 3 mm³) and of an array of superconducting Al/Al₂O₃/Al tunnel junctions evaporated onto the surface of the crystal, serving as phonon detectors. Pulse height analysis and the investigation of time differences between pulse onsets in different junctions are shown to yield information about the absorption point of -particles.     

High-performance single CdS nanowire (nanobelt) Schottky junction solar cells with Au/graphene Schottky electrodes

High-performance single CdS nanowire (NW) as well as nanobelt (NB) Schottky junction solar cells were fabricated. Au (5 nm)/graphene combined layers were used as the Schottky contact electrodes to the NWs (NBs). Typical as-fabricated NW solar cell shows excellent photovoltaic behavior with an open circuit voltage of ～0.15 V, a short circuit current of ～275.0 pA, and an energy conversion efficiency of up to ～1.65%. The physical mechanism of the combined Schottky electrode was discussed. We attribute the prominent capability of the devices to the high-performance Schottky combined electrode, which has the merits of low series resistance, high transparency, and good Schottky contact to the CdS NW (NB). Besides, a promising site-controllable patterned graphene transfer method, which has the advantages of economizing graphene material and free from additional etching process, was demonstrated in this work. Our results suggest that semiconductor NWs (NBs) are promising materials for novel solar cells, which have potential application in integrated nano-optoelectronic systems.     

Sb-Mediated Tuning of Growth- and Exciton Dynamics in Entirely Catalyst-Free GaAsSb Nanowires

Vapor-liquid-solid (VLS) growth is the mainstream method in realizing advanced semiconductor nanowires (NWs), as widely applied to many III-V compounds. It is exclusively explored also for antimony (Sb) compounds, such as the relevant GaAsSb-based NW materials, although morphological inhomogeneities, phase segregation, and limitations in the supersaturation due to Sb strongly inhibit their growth dynamics. Fundamental advances are now reported here via entirely catalyst-free GaAsSb NWs, where particularly the Sb-mediated effects on the NW growth dynamics and physical properties are investigated in this novel growth regime. Remarkably, depending on GaAsSb composition and nature of the growth surface, both surfactant and anti-surfactant action is found, as seen by transitions between growth acceleration and deceleration characteristics. For threshold Sb-contents up to 3–4%, adatom diffusion lengths are increased ≈sevenfold compared to Sb-free GaAs NWs, evidencing the significant surfactant effect. Furthermore, microstructural analysis reveals unique Sb-mediated transitions in compositional structure, as well as substantial reduction in twin defect density, ≈tenfold over only small compositional range (1.5–6% Sb), exhibiting much larger dynamics as found in VLS-type GaAsSb NWs. The effect of such extended twin-free domains is corroborated by ≈threefold increases in exciton lifetime (≈4.5 ns) due to enlarged electron-hole pair separation in these phase-pure NWs.     

High resolution detection of x-rays with a Nb-based STJ detector

A high energy-resolution of 88 eV has been achieved for 5.9-keV x-rays with a large area (178×178 µm²) Nb/Al-AlOx/Al/Nb superconducting tunnel junction (STJ) detector, which is stable at room temperature and robust to thermal cycles. The energy resolution is higher than those of semiconductor detectors. The resolution and the short shaping-time-constant, 2 µs, of the main amplifier used to obtain the energy resolution indicate that STJ detectors can be developed as nuclear radiation detectors with high energy resolution even for high rate radiations. Besides, a theoretical limit of energy resolution due to the statistical fluctuation of signal charges is discussed.     

Magnetometry with Low-Resistance Proximity Josephson Junction

We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) and its key constituent formed by a Nb–Cu–Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and deposition steps, relying on Ar ion cleaning of the Nb contact surfaces. The quality of the Nb–Cu interface is characterized by measuring the temperature-dependent equilibrium critical supercurrent of the SNS junction. In the Nb-SQUIPT device, we observe a maximum flux-to-current transfer function value of about \(55\;\mathrm {nA}/\mathrm {\Phi }_0\) in the sub-gap regime of bias voltages. This results in suppression of power dissipation down to a few fW. Low-bias operation of the device with a relatively low probe junction resistance decreases the dissipation by up to two orders of magnitude compared to a conventional device based on an Al–Cu–Al SNS junction and an Al tunnel probe (Al-SQUIPT).     

Semiconductor-superconductor hybrid electronics

This paper examines the feasibility and potential for applications of intimately combining semiconductor and superconductor devices at circuit and system levels. The focus is mainly on the temperature range 27–77 K. One of the main issues is the heat produced by the semiconductor devices, since the superconductor devices produce much less heat and are sensitive to temperature changes. It is shown that Josephson junctions made with high temperature superconductors can be placed very close to transistors on a properly heatsunk chip. A second important issue is interfacing the low voltages of superconducting devices to the much higher voltages needed for transistors; an existing technique is discussed in the context of high temperature superconductors. Only well developed semiconductor technologies have been considered; although there is some possibility of making low voltage transistors, this is not explored here. The paper concludes with an analysis of the various applications that can be realized, depending on the type of device available in high temperature superconductor technology: passive patterned films, nonhysteretic Josephson devices or Josephson tunnel juntions.     

A Robust Cooling Platform for NIS Junction Refrigeration and sub-Kelvin Cryogenic Systems

Recent advances in Normal metal–insulator-superconductor (NIS) tunnel junctions (Clark et al. Appl Phys Lett 86: 173508, 2005, Appl Phys Lett 84: 4, 2004) have proven these devices to be a viable technology for sub-Kelvin refrigeration. NIS junction coolers, coupled to a separate cold stage, provide a flexible platform for cooling a wide range of user-supplied payloads. Recently, a stage was cooled from 290 to 256 mK (Lowell et al. Appl Phys Lett 102: 082601 2013), but further mechanical and electrical improvements are necessary for the stage to reach its full potential. We have designed and built a new Kevlar suspended cooling platform for NIS junction refrigeration that is both lightweight and well thermally isolated; the calculated parasitic loading is \(<\!\!300\)  pW from 300 to 100 mK. The platform is structurally rigid with a measured deflection of 25  \(\upmu \) m under a 2.5 kg load and has an integrated mechanical heat switch driven by a superconducting stepper motor with thermal conductivity G \( = 4.5 \times 10^{-7}\)  W/K at 300 mK. An integrated radiation shield limits thermal loading and a modular platform accommodates enough junctions to provide nanowatts of continuous cooling power. The compact stage size of 7.6 cm \(\times \) 8.6 cm \(\times \) 4.8 cm and overall radiation shield size of 8.9 cm \(\times \) 10.0 cm \(\times \) 7.0 cm along with minimal electrical power requirements allow easy integration into a range of cryostats. We present the design, construction, and performance of this cooling platform as well as projections for coupling to arrays of NIS junctions and other future applications.     

Calorimetric Readout of a Superconducting Proximity-Effect Thermometer

A proximity-effect thermometer measures the temperature dependent critical supercurrent in a long superconductor—normal metal—superconductor (SNS) Josephson junction. Typically, the transition from the superconducting to the normal state is detected by monitoring the appearance of a voltage across the junction. We describe a new approach to detect the transition based on the temperature increase in the resistive state due to Joule heating. Our method increases the sensitivity and is especially applicable for temperatures below about 300 mK.     

1988 Applied Superconductivity Conference

The following topics are dealt with: superconducting electronics; superconducting quantum interference devices (SQUIDs); magnetometers; Josephson device memories; thin-film superconducting materials; tunnel junctions; Josephson device logic circuits; high-T_c (critical temperature) superconductors; YBaCuO superconductors: ceramic superconductor memories; millimeter-wave detectors; Josephson device mixers; superconducting transmission-line structure; superconducting microwave cavities; tunnel spectroscopy; laser-induced switching of superconductors; gradiometers; harmonic mixing; SIS (superconductor-insulator-superconductor) mixers; superconducting bolometers; superconductor device fabrication; SSC; (Superconductor Super Collider); magnets; superconducting magnets; chaos in Josephson junction systems; superconducting coils; superconducting material preparation; MHD; (magnetohydrodynamics) magnets; magnetic resonance imaging (MRI) magnets; and niobium materials devices     

Effects of strain on the carrier mobility in silicon nanowires

We investigate electron and hole mobilities in strained silicon nanowires (Si NWs) within an atomistic tight-binding framework. We show that the carrier mobilities in Si NWs are very responsive to strain and can be enhanced or reduced by a factor >2 (up to 5×) for moderate strains in the ± 2% range. The effects of strain on the transport properties are, however, very dependent on the orientation of the nanowires. Stretched 100 Si NWs are found to be the best compromise for the transport of both electrons and holes in ≈10 nm diameter Si NWs. Our results demonstrate that strain engineering can be used as a very efficient booster for NW technologies and that due care must be given to process-induced strains in NW devices to achieve reproducible performances.     

Shadow Epitaxy for In Situ Growth of Generic Semiconductor/Superconductor Hybrids

Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminum heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. This work introduces a crystal growth platform—based on 3D structuring of growth substrates—which enables synthesis of semiconductor nanowire hybrids with in situ patterned superconductor shells. The platform eliminates the need for etching, thereby enabling full freedom in the choice of hybrid constituents. All of the most frequently used superconducting hybrid device architectures are realized and characterized. These devices exhibit increased yield and electrostatic stability compared to etched devices, and evidence of ballistic superconductivity is observed. In addition to aluminum, hybrid structures based on tantalum, niobium, and vanadium are presented.     

Magnetic field measurement near a superconducting film using a 2-dimensional field-dependence of Josephson current through a Nb tunnel junctions sensor

Two-dimensional (2-D) magnetic field dependences of Niobium/niobium tunnel junction current Ic were first used in order to measure the magnetic field near the superconducting film. The 2-D magnetic field dependences of superconducting Josephson current Ic through the niobium/niobium tunnel junction can be changed by the external magnetic field. So, we measured the magnetic field using this superconducting tunnel junction fabricated by DC-magnetron apparatus as a magnetic sensor. The 2-D magnetic field dependences of Ic through the junction without and with the Nb thin-film sample were compared. With the Nb thin-film sample, extension of the characteristics in the perpendicular direction Hz to the sample was observed because of the Meissner effect of the superconducting thin-film sample. Moreover, the magnetic field Hz perpendicular to the Nb thin-film sample has been added in the triangle shape as a following sequence: (0)-(1000)-(0)-(2000)-(0)-(3000)-(0)-(4000)-(0)-(5000 A/m)-(0). Significant changes in the measured Ic-H (Hy,Hz) characteristics were observed above the certain value of Hz > 3000 A/m. We consider the shift of the measured Ic-H dependence in the Hz minus direction occurred because of the flux quanta were trapped in the sample superconducting niobium film after the Hz value had been added greater than 3000 A/m.     

Structural analysis of a cryogen-free refrigerator for space

Future X-ray observatories in space, such as European Space Agency's (ESA) X-ray evolving universe spectroscopy (XEUS) mission, will require cooling to the region 10–100 mK to enable the utilisation of advanced cryogenic photon detectors in cryogenic spectrometer instruments. Such missions are envisaged to be completely cryogen-free, replacing the traditional superfluid liquid helium cryostat with a space worthy mechanically cooled system. As part of the Mullard Space Science Laboratory's (MSSL) adiabatic demagnetisation refrigerator (ADR) development programme, we have investigated the construction of a flight cryostat containing a 10 mK ADR (the MSSL double ADR (dADR)) that can be cooled by a single Astrium (formally Matra Marconi Space (MMS)) 4 K mechanical cooler. A proto-type dADR has been constructed and will be flight proven as part of a sounding rocket payload, where the dADR system will be used to cool an array of superconducting tunnel junction (STJ) detectors at the focus of an X-ray telescope.     

Growth, defect formation, and morphology control of germanium-silicon semiconductor nanowire heterostructures

By the virtue of the nature of the vapor-liquid-solid (VLS) growth process in semiconductor nanowires (NWs) and their small size, the nucleation, propagation, and termination of stacking defects in NWs are dramatically different from that in thin films. We demonstrate germanium-silicon axial NW heterostructure growth by the VLS method with 100% composition modulation and use these structures as a platform to understand how defects in stacking sequence force the ledge nucleation site to be moved along or pinned at a single point on the triple-phase circumference, which in turn determines the NW morphology. Combining structural analysis and atomistic simulation of the nucleation and propagation of stacking defects, we explain these observations based on preferred nucleation sites during NW growth. The stacking defects are found to provide a fingerprint of the layer-by-layer growth process and reveal how the 19.5° kinking in semiconductor NWs observed at high Si growth rates results from a stacking-induced twin boundary formation at the NW edge. This study provides basic foundations for an atomic level understanding of crystalline and defective ledge nucleation and propagation during [111] oriented NW growth and improves understanding for control of fault nucleation and kinking in NWs.     

InAs Nanowire Devices with Strong Gate Tunability:Fundamental Electron Transport Properties and Application Prospects:A Review

The high electron mobility has granted indium arsenide(InAs) nanowires(NWs) as an important class of nanomaterials for high performance electronics such as field-effect transistors(FETs).We reviewed recent progresses on the studies of quantum coherence,gate tunable one-dimensional(1D) confinement and spin orbit interaction(SOI) in InAs NW based electronic and thermoelectric transport devices.We also demonstrated gas sensing response of InAs NW FETs and elucidated the mechanism via a gating experiment.By using InAs NWs as an example,these fundamental transport studies have shed important lights on the potential thermoelectric,spintronic and gas sensing applications of semiconductor NWs where the 1D confinement,SOI or surface states effects are exploited.